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Product Overview
Digi-Key Part Number C2M0280120D-ND
Quantity Available 2.588
Can ship immediately
Manufacturer

Manufacturer Part Number

C2M0280120D

Description MOSFET N-CH 1200V 10A TO-247-3
Expanded Description N-Channel 1200V (1.2kV) 10A (Tc) 62.5W (Tc) Through Hole TO-247-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Documents & Media
Datasheets C2M0280120D
Featured Product Cree - Silicon Carbide Power MOSFETs
Product Attributes Select All
Categories
Manufacturer

Cree/Wolfspeed

Series Z-FET™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Vgs(th) (Max) @ Id 2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 20.4nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 259pF @ 1000V
Vgs (Max) +25V, -10V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Rds On (Max) @ Id, Vgs 370 mOhm @ 6A, 20V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
 
For Use With
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Additional Resources
Standard Package ? 30

23:59:47 3/29/2017

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 5,13000 5,13
100 4,92770 492,77
500 4,80260 2.401,30

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