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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IMW65R057M1HXKSA1 | |
|---|---|
DigiKey Part Number | 448-IMW65R057M1HXKSA1-ND |
Manufacturer | |
Manufacturer Product Number | IMW65R057M1HXKSA1 |
Description | SILICON CARBIDE MOSFET, PG-TO247 |
Customer Reference | |
Detailed Description | N-Channel 650 V 35A (Tc) 133W (Tc) Through Hole PG-TO247-3-41 |
Datasheet | Datasheet |
EDA/CAD Models | IMW65R057M1HXKSA1 Models |
Product Attributes
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Category | Vgs(th) (Max) @ Id 5.7V @ 5mA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 28 nC @ 18 V |
Series | Vgs (Max) +20V, -2V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 400 V |
Part Status Not For New Designs | Power Dissipation (Max) 133W (Tc) |
FET Type | Operating Temperature -55°C ~ 175°C (TJ) |
Technology | Mounting Type Through Hole |
Drain to Source Voltage (Vdss) 650 V | Supplier Device Package PG-TO247-3-41 |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 18V | Base Product Number |
Rds On (Max) @ Id, Vgs 74mOhm @ 16.7A, 18V |
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In-Stock: 3
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Quantity
All prices are in CHF
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | Fr.8.26000 | Fr.8.26 |
| 30 | Fr.4.81667 | Fr.144.50 |
| 120 | Fr.4.06117 | Fr.487.34 |
| 510 | Fr.3.50780 | Fr.1,788.98 |
| 1,020 | Fr.3.30602 | Fr.3,372.14 |
| 2,010 | Fr.3.13979 | Fr.6,310.98 |
| Unit Price without VAT: | Fr.8.26000 |
|---|---|
| Unit Price with VAT: | Fr.8.92906 |
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