SiC (Silicon Carbide) Schottky Single Diodes

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Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GE12MPS06E
GD02MPS12E
DIODE SIL CARB 1200V 8A TO2522
Navitas Semiconductor, Inc.
2,607
In Stock
1 : Fr.1.43000
Cut Tape (CT)
2,500 : Fr.0.71683
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SiC (Silicon Carbide) Schottky
1200 V
8A
1.8 V @ 2 A
Zero Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
73pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
PG-VSON-4
IDL04G65C5XUMA2
DIODE SIL CARB 650V 4A PGVSON4
Infineon Technologies
1,016
In Stock
1 : Fr.1.98000
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3,000 : Fr.0.56506
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Tape & Reel (TR)
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SiC (Silicon Carbide) Schottky
650 V
4A
1.7 V @ 4 A
Zero Recovery Time > 500mA (Io)
0 ns
70 µA @ 650 V
130pF @ 1V, 1MHz
-
-
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 175°C
TO-252-3, DPAK (2 Leads + Tab), SC-63
C3D04060E-TR
DIODE SIL CARB 600V 13.5A TO252
Wolfspeed, Inc.
2,387
In Stock
1 : Fr.2.04000
Cut Tape (CT)
2,500 : Fr.0.65669
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Tape & Reel (TR)
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SiC (Silicon Carbide) Schottky
600 V
13.5A
1.8 V @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 600 V
251pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
TO-252-3, DPAK (2 Leads + Tab), SC-63
C4D02120E
DIODE SIL CARB 1200V 10A TO2522
Wolfspeed, Inc.
5,344
In Stock
1 : Fr.2.39000
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SiC (Silicon Carbide) Schottky
1200 V
10A
1.8 V @ 2 A
Zero Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
167pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
DO-214AA, SMB
GB01SLT06-214
DIODE SIL CARB 650V 1A DO214AA
Navitas Semiconductor, Inc.
22,149
In Stock
1 : Fr.2.52000
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3,000 : Fr.0.75841
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SiC (Silicon Carbide) Schottky
650 V
1A
2 V @ 1 A
Zero Recovery Time > 500mA (Io)
0 ns
10 µA @ 6.5 V
76pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
DPAK
STPSC10H065B-TR
DIODE SIL CARBIDE 650V 10A DPAK
STMicroelectronics
179
In Stock
1 : Fr.2.74000
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2,500 : Fr.0.84959
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-
Tape & Reel (TR)
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SiC (Silicon Carbide) Schottky
650 V
10A
1.75 V @ 10 A
Zero Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
480pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-40°C ~ 175°C
TO-252-3, DPAK (2 Leads + Tab), SC-63
IDM08G120C5XTMA1
DIODE SIL CARB 1200V 8A PGTO2522
Infineon Technologies
3,179
In Stock
1 : Fr.2.98000
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2,500 : Fr.0.93706
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SiC (Silicon Carbide) Schottky
1200 V
8A
1.95 V @ 8 A
Zero Recovery Time > 500mA (Io)
0 ns
40 µA @ 1200 V
365pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-2
-55°C ~ 175°C
TO-220-2
C3D06060A
DIODE SIL CARB 600V 19A TO220-2
Wolfspeed, Inc.
18,002
In Stock
1 : Fr.2.98000
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SiC (Silicon Carbide) Schottky
600 V
19A
1.8 V @ 6 A
Zero Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
294pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
C3D02060F
C3D06060F
DIODE SIC 600V 11.5A TO220-F2
Wolfspeed, Inc.
10,777
In Stock
1 : Fr.2.98000
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SiC (Silicon Carbide) Schottky
600 V
11.5A
1.8 V @ 6 A
Zero Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
294pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2 Full Pack
TO-220-F2
-55°C ~ 175°C
DPAK
STPSC10H065BY-TR
DIODE SIL CARBIDE 650V 10A DPAK
STMicroelectronics
2,965
In Stock
1 : Fr.3.59000
Cut Tape (CT)
2,500 : Fr.1.17385
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-
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SiC (Silicon Carbide) Schottky
650 V
10A
-
Zero Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
480pF @ 0V, 1MHz
Automotive
AEC-Q101
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-40°C ~ 175°C
TO-247-2
GP3D005A170B
DIODE SIL CARB 1700V 21A TO2472
SemiQ
2,179
In Stock
1 : Fr.3.65000
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SiC (Silicon Carbide) Schottky
1700 V
21A
1.65 V @ 5 A
Zero Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
347pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
DO-214AA, SMB
GB01SLT12-214
DIODE SIL CARBIDE 1.2KV 1A SMB
Navitas Semiconductor, Inc.
9,780
In Stock
1 : Fr.3.72000
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3,000 : Fr.1.21037
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SiC (Silicon Carbide) Schottky
1200 V
1A
1.8 V @ 1 A
Zero Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
61pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
TO-220-2
GD10MPS12A
DIODE SIL CARB 1200V 25A TO220
Navitas Semiconductor, Inc.
2,476
In Stock
1 : Fr.3.91000
Tube
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Last Time Buy
SiC (Silicon Carbide) Schottky
1200 V
25A
1.8 V @ 10 A
Zero Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
367pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
PG-VSON-4
IDL12G65C5XUMA2
DIODE SIL CARB 650V 12A PGVSON4
Infineon Technologies
331
In Stock
1 : Fr.4.10000
Cut Tape (CT)
3,000 : Fr.1.37825
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SiC (Silicon Carbide) Schottky
650 V
12A
1.7 V @ 12 A
Zero Recovery Time > 500mA (Io)
0 ns
190 µA @ 650 V
360pF @ 1V, 1MHz
-
-
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C
TO-220-2
C3D10060A
DIODE SIL CARB 600V 30A TO220-2
Wolfspeed, Inc.
5,924
In Stock
1 : Fr.4.35000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
600 V
30A
1.8 V @ 10 A
Zero Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
480pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
C3D06060G
C3D10060G
DIODE SIL CARB 600V 29A TO263-2
Wolfspeed, Inc.
1,496
In Stock
1 : Fr.4.35000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
600 V
29A
1.8 V @ 10 A
Zero Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
480pF @ 0V, 1MHz
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-2
-55°C ~ 175°C
TO-252-3, DPAK (2 Leads + Tab), SC-63
C4D05120E
DIODE SIL CARB 1200V 19A TO2522
Wolfspeed, Inc.
9,576
In Stock
1 : Fr.4.68000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
19A
1.8 V @ 5 A
Zero Recovery Time > 500mA (Io)
0 ns
150 µA @ 1200 V
390pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
IDH20G65C6XKSA1
IDH16G65C6XKSA1
DIODE SIL CARB 650V 34A PGTO220
Infineon Technologies
2,869
In Stock
1 : Fr.5.36000
Tube
-
Tube
Not For New Designs
SiC (Silicon Carbide) Schottky
650 V
34A
1.35 V @ 16 A
Zero Recovery Time > 500mA (Io)
0 ns
53 µA @ 420 V
783pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
10-PowerSOP Module
IDDD16G65C6XTMA1
DIODE SIC 650V 43A PGHDSOP101
Infineon Technologies
395
In Stock
1 : Fr.5.59000
Cut Tape (CT)
1,700 : Fr.2.05121
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Digi-Reel®
Not For New Designs
SiC (Silicon Carbide) Schottky
650 V
43A
-
Zero Recovery Time > 500mA (Io)
0 ns
53 µA @ 420 V
783pF @ 1V, 1MHz
-
-
Surface Mount
10-PowerSOP Module
PG-HDSOP-10-1
-55°C ~ 175°C
D2PAK
STPSC20065GY-TR
DIODE SIL CARBIDE 650V 20A D2PAK
STMicroelectronics
1,663
In Stock
1 : Fr.5.69000
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1,000 : Fr.2.19367
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SiC (Silicon Carbide) Schottky
650 V
20A
1.45 V @ 20 A
Zero Recovery Time > 500mA (Io)
0 ns
150 µA @ 600 V
1250pF @ 0V, 1MHz
Automotive
AEC-Q101
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C
TO-252AA
FFSD10120A
DIODE SIL CARBIDE 1200V TO252AA
onsemi
4,990
In Stock
1 : Fr.5.89000
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2,500 : Fr.2.23514
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-
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SiC (Silicon Carbide) Schottky
1200 V
-
1.75 V @ 10 A
Zero Recovery Time > 500mA (Io)
0 ns
200 µA @ 1200 V
612pF @ 1V, 100kHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-
IDH20G65C6XKSA1
IDH20G65C6XKSA1
DIODE SIL CARB 650V 41A PGTO220
Infineon Technologies
1,677
In Stock
1 : Fr.6.24000
Tube
-
Tube
Not For New Designs
SiC (Silicon Carbide) Schottky
650 V
41A
1.35 V @ 20 A
Zero Recovery Time > 500mA (Io)
0 ns
67 µA @ 420 V
970pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
D²Pak,TO-263_418B−04
FFSB3065B
DIODE SIL CARBIDE 650V 73A TO263
onsemi
979
In Stock
1 : Fr.6.39000
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800 : Fr.2.55950
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SiC (Silicon Carbide) Schottky
650 V
73A
1.7 V @ 30 A
Zero Recovery Time > 500mA (Io)
0 ns
40 µA @ 650 V
1280pF @ 1V, 100kHz
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 175°C
10-PowerSOP Module
IDDD20G65C6XTMA1
DIODE SIC 650V 51A PGHDSOP101
Infineon Technologies
1,700
In Stock
1 : Fr.6.47000
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1,700 : Fr.2.53428
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SiC (Silicon Carbide) Schottky
650 V
51A
-
Zero Recovery Time > 500mA (Io)
0 ns
67 µA @ 420 V
970pF @ 1V, 1MHz
-
-
Surface Mount
10-PowerSOP Module
PG-HDSOP-10-1
-55°C ~ 175°C
TO-263-8
GD05MPS17J-TR
DIODE SIL CARB 1700V 15A TO2637
Navitas Semiconductor, Inc.
5,600
In Stock
1 : Fr.6.69000
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800 : Fr.2.70255
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SiC (Silicon Carbide) Schottky
1700 V
15A
1.8 V @ 5 A
Zero Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
361pF @ 1V, 1MHz
-
-
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
-55°C ~ 175°C
Showing
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Types of Rectifier Diodes

Standard Rectifier Diodes
  • Standard Diodes (Silicon PN Junction)
    Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

  • Schottky Barrier Diodes (SBD)
    Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

  • Super Barrier Rectifiers (SBR)
    Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

  • Avalanche Diodes
    Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.
    • In fast switching rectification, avalanche diodes are sometimes preferred over standard PN diodes because of their improved reverse recovery behavior, which reduces switching losses and improves overall converter efficiency. Their ability to withstand high reverse voltage transients without degradation makes them particularly suited for snubber circuits, flyback converters, and hard-switched topologies.

  • Silicon Carbide (SiC) Diodes
    SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.
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