© 2001 IXYS All rights reserved 98845 (6/01)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 200 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ200 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C60A
IDM TC= 25°C, pulse width limited by TJM 240 A
IAR TC= 25°C60A
EAR TC= 25°C50mJ
EAS 2.5 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 300 W
TJ-55 to +150 °C
TJM 150 °C
Tstg -55 to +150 °C
TL1.6 mm (0.063 in) from case for 10 s 300 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Features
lInternational standard packages
lLow RDS (on)
lRated for unclamped Inductive load
switching (UIS)
lMolding epoxies meet UL 94 V-0
flammability classification
Advantages
lEasy to mount
lSpace savings
lHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250µA 200 V
VGS(th) VDS = VGS, ID = 4 mA 2.0 4.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C25µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 33 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD (IXFH)
G = Gate D = Drain
S = Source TAB = Drain
HiPerFETTM
Power MOSFETs
TO-268 ( IXFT) Case Style
(TAB)
G
S
VDSS = 200 V
ID25 = 60 A
RDS(on) = 33 mΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
IXFH 60N20
IXFT 60N20
(TAB)
ADVANCE TECHNICAL INFORMATION
J
Crififi/ I,
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 60N20
IXFT 60N20
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 30 40 S
Ciss 5200 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 880 pF
Crss 260 pF
td(on) 38 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 63 ns
td(off) RG = 2.5 Ω (External), 85 ns
tf26 ns
Qg(on) 155 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 38 nC
Qgd 55 nC
RthJC 0.42 K/W
RthCK (TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 60 A
ISM Repetitive; pulse width limited by TJM 240 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr 250 ns
QRM IF = 25A, -di/dt = 100 A/µs, VR = 50 V 0.7 µC
IRM 8A
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Products related to this Datasheet
MOSFET N-CH 200V 60A TO-247