Fiche technique pour TIP41(A,B,C),TIP42(A,B,C) de onsemi

0N Sem ccccccccccc WU
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 11
1Publication Order Number:
TIP41A/D
TIP41G, TIP41AG, TIP41BG,
TIP41CG (NPN),
TIP42G,TIP42AG, TIP42BG,
TIP42CG(PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
•Epoxy Meets UL 94 V−0 @ 0.125 in
•These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
VCEO 40
60
80
100
Vdc
Collector−Base Voltage
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
VCB 40
60
80
100
Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC6.0 Adc
Collector Current − Peak ICM 10 Adc
Base Current IB2.0 Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD65
0.52
W
W/°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD2.0
0.016
W
W/°C
Unclamped Inductive Load Energy
(Note 1)
E 62.5 mJ
Operating and Storage Junction,
Temperature Range
TJ, Tstg – 65 to +150 °C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
6 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
40−60−80−100 VOLTS,
65 WATTS
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123
4
TIP4xx = Device Code
xx = 1, 1A, 1B, 1C
2, 2A, 2B, 2C
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
TIP4xxG
AYWW
See detailed ordering and shipping information on page 6 of
this data sheet.
ORDERING INFORMATION
1
BASE
3
EMITTER
COLLECTOR
2,4
1
BASE
3
EMITTER
COLLECTOR
2,4
NPNPNP
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TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.67 °C/W
Thermal Resistance, Junction−to−Ambient RqJA 57 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
VCEO(sus)
40
60
80
100
−
−
−
−
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP41G, TIP41AG, TIP42G, TIP42AG
(VCE = 60 Vdc, IB = 0)
TIP41BG, TIP41CG, TIP42BG, TIP42CG
ICEO
−
−
0.7
0.7
mAdc
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
TIP41G, TIP42G
(VCE = 60 Vdc, VEB = 0)
TIP41AG, TIP42AG
(VCE = 80 Vdc, VEB = 0)
TIP41BG, TIP42BG
(VCE = 100 Vdc, VEB = 0)
TIP41CG, TIP42CG
ICES
−
−
−
−
400
400
400
400
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO −1.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE 30
15
−
75
−
Collector−Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 600 mAdc)
VCE(sat)
−1.5
Vdc
Base−Emitter On Voltage
(IC = 6.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−2.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT3.0 −
MHz
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe 20 −
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
(. TIME 105) 79.1w J ms 10 ns DUTV CYCLE : i 0% R5 and R5 VARLED TO OBTALN DESIRED CURRENT LEV Di MUST BE FAST RECOVERV TYPE 3.0. iNSBZS USED ABOVE ‘5 z 100 mA MSDSiflfl USED BELOW '3 :100 mA Figure 2. Switching Time Test Ci 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 in @ Vazm : 0.03 0.02 0.06 0.1 02 0.4 06 ‘0 2.0 lc. COLLECTOR CURRENT (AM P) Figure 3. Turnion Time www.cnsemi.com a
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
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3
Figure 1. Power Derating
T, TEMPERATURE (°C)
0 100
0
20
160
40
60
60 80
40 140
80
Figure 2. Switching Time Test Circuit
0.06
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
0.02
0.4 6.0
0.07
1.0
4.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
t, TIME (s)
μ
0.5
0.3
0.1
0.05
0.1 0.6 1.0
td @ VBE(off) ≈ 5.0 V
0.03
0.7
2.0
0.2 2.0
tr
20 120
PD, POWER DISSIPATION (WATTS)
TC
TC
0
1.0
2.0
3.0
4.0
TA
TA
+11 V
25 ms
0
-9.0 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
0.2
0,05 0,02 0,01 S‘NGLE PULSE \ 10m \\ E0 J: Isucc CURVES AFFLV BELOW RATED vc _ SECONDARV BREAKDOWN LTD 50 ms THERMAL UMITAT‘ON @ TC 7 SCC TIPMA TIP42A TIPME TINZE
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
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t, TIME (ms)
1.0
0.01
0.01
0.1
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 1.0 100
ZqJC(t) = r(t) RqJC
RqJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
SINGLE PULSE
1.0 k
D = 0.5
0.2
0.05
DUTY CYCLE, D = t1/t2
Figure 4. Thermal Response
0.1
0.05
0.02
0.01
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10 205.0 60 100
Figure 5. Active−Region Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
THERMAL LIMITATION @ TC = 25°C
(SINGLE PULSE)
1.0ms
2.0
1.0
10
5.0
IC, COLLECTOR CURRENT (AMP)
0.5ms
CURVES APPLY BELOW RATED VCEO
3.0
0.3
40 80
5.0ms
TJ = 150°C
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150°C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1 0.4 0.6 4.00.06 1.0 2.00.2
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn−Off Time
5.0
t, TIME (s)μ
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
6.0 1.0 3.0 5.0 200.5 102.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
300
C, CAPACITANCE (pF)
200
100
70
50
30
30 50
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2 Cib
Cob
3.0
ts
tf
TJ = 25°C
nasorfic 5:0 In Msnjc Vaasaq @ '5 '3 55C In HSO’ v @ v ow FOR vHE
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
103
-0.3
101
100
10-2
102
10-1
10-3
10M
100k
10k
0.1k
1.0M
1.0k
IB, BASE CURRENT (mA)IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
Figure 8. DC Current Gain Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (AMP)
300
500
0.1 0.2 0.4 6.00.06
100
70
50
30
10
7.0
0.3
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 10. “On” Voltages
VCE = 2.0 V
5.0 1.0 2.00.6
1.6
2.0
20 30 100 100010
0.8
0.4
50
0300 500200
25°C
TJ = 150°C
-55°C
1.2
2.0
0.06
IC, COLLECTOR CURRENT (AMP)
1.6
0.8
1.2
0.4
00.1 0.2 0.3 0.4 0.6 1.0
+2.5
IC = 1.0 A
20 60 80 100 120 16014040
V, VOLTAGE (VOLTS)
TJ = 25°C
2.5 A 5.0 A
2.0 3.0 4.0 6.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 10
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.0
+1.5
+1.0
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
*APPLIES FOR IC/IB ≤ hFE/4
*qVC FOR VCE(sat)
qVB FOR VBE
Figure 11. Temperature Coefficients
, COLLECTOR CURRENT (A)μIC
-0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
IC = ICES
RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
VCE = 30 V
IC = 10 x ICES
IC ≈ ICES
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
200
20
4.0
0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 6.0
+25°C to +150°C
-55°C to +25°C
+25°C to +150°C
-55°C to +25°C
+0.7
TJ = 25°C
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TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
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ORDERING INFORMATION
Device Package Shipping
TIP41G TO−220
(Pb−Free)
50 Units / Rail
TIP41AG TO−220
(Pb−Free)
50 Units / Rail
TIP41BG TO−220
(Pb−Free)
50 Units / Rail
TIP41CG TO−220
(Pb−Free)
50 Units / Rail
TIP42G TO−220
(Pb−Free)
50 Units / Rail
TIP42AG TO−220
(Pb−Free)
50 Units / Rail
TIP42BG TO−220
(Pb−Free)
50 Units / Rail
TIP42CG TO−220
(Pb−Free)
50 Units / Rail
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TO−220
CASE 221A−09
ISSUE AJ
DATE 05 NOV 2019
SCALE 1:1
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
4. EMITTER
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
STYLE 7:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. ANODE
STYLE 10:
PIN 1. GATE
2. SOURCE
3. DRAIN
4. SOURCE
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 8:
PIN 1. CATHODE
2. ANODE
3. EXTERNAL TRIP/DELAY
4. ANODE
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 9:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 11:
PIN 1. DRAIN
2. SOURCE
3. GATE
4. SOURCE
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. NOT CONNECTED
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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1
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