Fiche technique pour BY228 de Vishay General Semiconductor - Diodes Division

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BY228
www.vishay.com Vishay Semiconductors
Rev. 1.8, 21-Feb-18 1Document Number: 86003
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Avalanche Sinterglass Diode
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• High voltage rectification
• Efficiency diode in horizontal deflection circuit
949588
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Available
Models
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BY228 BY228TR 2500 per 10" tape and reel 12 500
BY228 BY228TAP 2500 per ammopack 12 500
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BY228 VR = 1500 V; IF(AV) = 3 A SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage See electrical characteristics BY228 VR1500 V
Repetitive peak reverse voltage lR = 100 μA VRRM 1650 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 50 A
Average forward current IF(AV) 3A
Junction temperature Tj140 °C
Storage temperature range Tstg -55 to +175 °C
Non repetitive reverse avalanche energy l(BR)R = 0.4 A ER10 mJ
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient On PC board with spacing 25 mm RthJA 70 K/W
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BY228
www.vishay.com Vishay Semiconductors
Rev. 1.8, 21-Feb-18 2Document Number: 86003
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 5 A VF--1.5V
Reverse current VR = 1500 V IR-25μA
VR = 1500 V, Tj = 140 °C IR- - 140 μA
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr --2μs
Total reverse recovery time IF = 1 A, - dIF/dt = 0.05 A/μs trr - - 20 μs
94 9081
ll
TL = constant
RthJA - Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)
0
10
20
30
40
151050 202530
0.001
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0
16407 VF - Forward Voltage (V)
IF - Forward Current (A)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
16408
0755025 125100 150
Tamb - Ambient Temperature (°C)
IFAV - Average Forward Current (A)
VR = VRRM
half sine wave
RthJA = 25 K/W
l = 10 mm
RthJA = 70 K/W
PCB: d = 25 mm
1
10
100
1000
25 50 75 100 125 150
16409 Tj - Junction Temperature (°C)
IR - Reverse Current (μA)
VR = VRRM
VISHAY. DmdesAmencas©wshay.com DmdesAswa©wshay£om DmdesEumge®vushay.com www.mshay.com/doc?91000
BY228
www.vishay.com Vishay Semiconductors
Rev. 1.8, 21-Feb-18 3Document Number: 86003
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
0
50
100
150
200
250
300
350
25 50 75 100 125 150
16410
Tj - Junction Temperature (°C)
PR - Reverse Power Dissipation (mW)
VR = VRRM
PR - Limit at 100 % VR
PR - Limit at 80 % VR
0
10
20
30
40
50
60
70
0.1 1 10 100
16411 VR - Reverse Voltage (V)
CD - Diode Capacitance (pF)
f = 1 MHz
Cathode Identification 4.3 (0.168) max.
1.35 (0.053) max.
4 (0.156) max.
Sintered Glass Case
SOD-64
26(1.014) min. 26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
— VISHAY. V
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Revision: 01-Jan-2021 1Document Number: 91000
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