Fiche technique pour STx33N60M2 de STMicroelectronics

123
TO-220
TAB
123
TO-220FP
1
23
TAB
I2PAK
TO-247
, TAB
1
D
(
)
(2
)
G
S3
()
AM15572V1
Features
Order codes VDS @ TJmax RDS(on) max. IDPackage
STF33N60M2
650 V 0.125 Ω 26 A
TO-220FP
STI33N60M2 I²PAK
STP33N60M2 TO-220
STW33N60M2 TO-247
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
Description
These devices are N-channel Power MOSFETs developed using the MDmesh M2
technology. Thanks to their strip layout and improved vertical structure, these devices
exhibit low on-resistance and optimized switching characteristics, rendering them
suitable for the most demanding high-efficiency converters.
Product status links
STF33N60M2
STI33N60M2
STP33N60M2
STW33N60M2
N-channel 600 V, 0.108 Ω typ., 26 A, MDmesh M2 Power MOSFETs
in TO‑220FP, I2PAK, TO-220 and TO-247 packages
STF33N60M2, STI33N60M2
STP33N60M2, STW33N60M2
Datasheet
DS9497 - Rev 3 - June 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220FP I2PAK, TO-220,
TO-247
VGS Gate-source voltage ±25 V
ID
Drain current (continuous) at TC = 25 °C 26(1) 26 A
Drain current (continuous) at TC = 100 °C 16(1) 16 A
IDM(2) Drain current (pulsed) 104(1) 104 A
PTOT Total power dissipation at TC = 25 °C 35 190 W
dv/dt(3) Peak diode recovery voltage slope 15 V/ns
dv/dt(4) MOSFET dv/dt ruggedness 50 V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t = 1 s, TC = 25 °C)
2500 V
Tstg Storage temperature range
-50 to 150 °C
TjOperating junction temperature range
1. Limited by maximum junction temperature.
2. Pulse width is limited by safe operating area.
3. ISD ≤ 26 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 400 V
4. VDS ≤ 480 V
Table 2. Thermal data
Symbol Parameter
Value
Unit
TO-220FP I2PAK
TO-220
TO-247
Rthj-case Thermal resistance junction-case 3.6 0.66 °C/W
Rthj-amb Thermal resistance junction-ambient 62.5 50 °C/W
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)5 A
EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 450 mJ
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
Electrical ratings
DS9497 - Rev 3 page 2/20
2Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 V 600 V
IDSS Zero gate voltage drain current
VGS = 0 V, VDS = 600 V 1 µA
VGS = 0 V, VDS = 600 V,
TC = 125 °C(1) 100 µA
IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 13 A 0.108 0.125 Ω
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
- 1781 - pF
Coss Output capacitance - 85 - pF
Crss Reverse transfer capacitance - 2.5 - pF
Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 135 - pF
RGIntrinsic gate resistance f = 1 MHz, ID = 0 V - 5.2 - Ω
QgTotal gate charge VDD = 480 V, ID = 26 A,
VGS = 0 to 10 V
(see Figure 19. Test circuit for gate
charge behavior)
- 45.5 - nC
Qgs Gate-source charge - 9.9 - nC
Qgd Gate-drain charge - 18.5 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 300 V, ID = 13 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18. Test circuit for
resistive load switching times and
Figure 23. Switching time
waveform)
- 16 - ns
trRise time - 9.6 - ns
td(off) Turn-off delay time - 109 - ns
tfFall time - 9 - ns
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
Electrical characteristics
DS9497 - Rev 3 page 3/20
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 26 A
ISDM(1) Source-drain current (pulsed) - 104 A
VSD(2) Forward on voltage ISD = 26 A, VGS = 0 V - 1.6 V
trr Reverse recovery time ISD = 26 A, di/dt = 100 A/µs
VDD = 60 V
(see Figure 20. Test circuit for
inductive load switching and diode
recovery times)
- 375 ns
Qrr Reverse recovery charge - 5.6 µC
IRRM Reverse recovery current - 30 A
trr Reverse recovery time ISD = 26 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 20. Test circuit for
inductive load switching and diode
recovery times)
- 478 ns
Qrr Reverse recovery charge - 7.7 µC
IRRM Reverse recovery current - 35.5 A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
Electrical characteristics
DS9497 - Rev 3 page 4/20
(A) 0.1 om 01 I 10 mo Vnsw (A) 10 DJ 0.1 1 10 mo vnsw l (A) ID o I DJ 1 In loo VDs(V K m 0.1 ‘0" mas 0. cm smcL: nuns: 10" 10-5 10“ lo" 10" 10“~,(s) m” 1m : k 5w" A: ”/7 am .,L Hr2 10-5 10" to” 10'2 10".,(5)
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220FP
I
D
1
0.1
0.1 1 100 V
DS
(V)
10
(A)
Ope ration in this are a is
Limited by max R
DS(on )
10µs
100µs
1ms
10ms
0.01
Tj=150°C
Tc=25°C
Single pulse
10
100
AM17917v1
Figure 2. Thermal impedance for TO-220FP
10-1
10-2
10-3
K
tp(s)
10-4 10-3 10-2 10-1 10-0
Z
th
= K*R
thJ-c
δ =t
p
/ Ƭ
t
pƬ
δ =0.5
0.01
Single pulse
0.2
0.1
0.02
0.05
GC20521
Figure 3. Safe operating area for I2PAK and TO-220
I
D
10
1
0.1 1 100 V
DS
(V)
10
(A)
Ope ration in this are a is
Limited by max RDS (on)
10µs
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
100
AM17906v1
Figure 4. Thermal impedance for I2PAK and TO-220
Figure 5. Safe operating area for TO-247
I
D
10
1
0.1 1 100 V
DS
(V)
10
(A)
Ope ration in this are a is
Limited by max RDS (on)
10µs
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
100
AM17918v1
Figure 6. Thermal impedance for TO-247
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
Electrical characteristics (curves)
DS9497 - Rev 3 page 5/20
VHS 10 (A) 50 30 10 10 108 106 104 20 30 4o 50 Oz; 10 100 50 725
Figure 7. Output characteristics
I
D
50
30
10
0
0 5 V
DS
(V)
10
(A)
15
4V
5V
V
GS
=7, 8, 9, 10V
20
40
60 6V
20
AM17907v1
Figure 8. Transfer characteristics
I
D
60
40
20
0
0 4 V
GS
(V)
8
(A)
2 6 10
10
30
50
V
DS
=17V
AM17908v1
Figure 9. Gate charge vs gate-source voltage
Figure 10. Static drain-source on-resistance
R
DS(on)
0.108
0.106
0.104
0 10 I
D
(A)
(Ω)
5 15
0.110
V
GS
=10V
20 25
0.112
0.114
AM17910v1
Figure 11. Capacitance variations
C
1000
100
10
1
0.1 10 V
DS
(V)
(pF)
1 100
Ciss
Cos s
Crss
10000
AM17911v1
Figure 12. Normalized gate threshold voltage vs
temperature
V
GS(th)
1.0
0.9
0.8
0.7
-50 0 T
J
(°C)
(norm)
-25
1.1
75
25 50 100
I
D
=250µA
AM17913v1
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
Electrical characteristics (curves)
DS9497 - Rev 3 page 6/20
Amman (V) 1.2 1.4 1.0 0.8 06 04 02 (A) AMHDIQVI GADGDmZZmQMssEAS
Figure 13. Normalized on-resistance vs temperature
R
DS(on)
1.9
1.3
0.9
0.5
-50 0 T
J
(°C)
(norm)
-25 75
25 50 100
0.7
1.1
1.5
1.7
2.1
2.3
I
D
=13A
V
DS
=10V
AM17914v1
Figure 14. Source-drain diode forward characteristics
V
SD
0 4 I
SD
T
J
=-50°C
T
J
=150°C
T
J
AM17916v1
Figure 15. Normalized V(BR)DSS vs temperature
-50 0 T
J
(°C)
-25 75
25 50 100
0.91
0.93
0.95
0.97
0.99
1.01
1.03
1.05
I
D
=1mA
1.07
1.09
AM17915v1
V(BR)DSS
(norm.)
Figure 16. Output capacitance stored energy
E
oss
4
2
0
0 100 V
DS
(V)
(µJ)
400
200 300
6
500 600
8
10
12
AM17912v1
Figure 17. Maximum avalanche energy vs temperature
GADG070220191439EAS
400
300
200
100
0
-75 -25 25 75 125
EAS
(mJ)
TJ (°C)
ID = 5 A,
VDD = 50 V
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
Electrical characteristics (curves)
DS9497 - Rev 3 page 7/20
3Test circuits
Figure 18. Test circuit for resistive load switching times
AM01468v1
VD
RG
RL
D.U.T.
2200
μF VDD
3.3
μF
+
pulse width
VGS
Figure 19. Test circuit for gate charge behavior
AM01469v1
47 kΩ 1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST 100 Ω
100 nF
D.U.T.
+
pulse width
VGS
2200
μF
VG
VDD
Figure 20. Test circuit for inductive load switching and
diode recovery times
AM01470v1
A
D
D.U.T.
SB
G
25 Ω
AA
BB
RG
G
D
S
100 µH
µF
3.3 1000
µF VDD
D.U.T.
+
_
+
fast
diode
Figure 21. Unclamped inductive load test circuit
AM01471v1
VD
ID
D.U.T.
L
VDD
+
pulse width
Vi
3.3
µF
2200
µF
Figure 22. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
Figure 23. Switching time waveform
AM01473v1
0
VGS 90%
VDS
90%
10%
90%
10%
10%
ton
td(on) tr
0
toff
td(off) tf
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
Test circuits
DS9497 - Rev 3 page 8/20
L7 L6 F1 <51. «*6="" l4="" l2="" l3="">
4Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP package information
Figure 24. TO-220FP package outline
7012510_Rev_13_B
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
Package information
DS9497 - Rev 3 page 9/20
Table 8. TO-220FP package mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
B 2.50 2.70
D 2.50 2.75
E 0.45 0.70
F 0.75 1.00
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.20
G1 2.40 2.70
H 10.00 10.40
L2 16.00
L3 28.60 30.60
L4 9.80 10.60
L5 2.90 3.60
L6 15.90 16.40
L7 9.00 9.30
Dia 3.00 3.20
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
TO-220FP package information
DS9497 - Rev 3 page 10/20
+ <—b (3x)="">
4.2 I²PAK package information
Figure 25. I²PAK package outline
0004982_Rev_H
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
I²PAK package information
DS9497 - Rev 3 page 11/20
Table 9. I²PAK package mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 - 4.60
A1 2.40 - 2.72
b 0.61 - 0.88
b1 1.14 - 1.70
c 0.49 - 0.70
c2 1.23 - 1.32
D 8.95 - 9.35
e 2.40 - 2.70
e1 4.95 - 5.15
E 10 - 10.40
L 13 - 14
L1 3.50 - 3.93
L2 1.27 - 1.40
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
I²PAK package information
DS9497 - Rev 3 page 12/20
9P E F A o f 0 , Hf I 0 Di L20 2 (I) g L50 [1 I 1 [210(3) _.| LI L +41 ‘ | 1 2 J ‘5 I b {X5}
4.3 TO-220 type A package information
Figure 26. TO-220 type A package outline
0015988_typeA_Rev_22
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
TO-220 type A package information
DS9497 - Rev 3 page 13/20
Table 10. TO-220 type A package mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
TO-220 type A package information
DS9497 - Rev 3 page 14/20
| I ,I I I L, HEAFS/NK PLANE ——A—— 5 WP I | S 2 IR ‘:‘ I > (,3 {,7 , , , ‘ -, D | I L2 I i I I I | LII I ' I L] I j—-‘- - | I I L I I I I b’ I I - ' I b2 ‘ U I I I -*I>I 2 “'1 J 2 I +I+b 6 BACK VIEW
4.4 TO-247 package information
Figure 27. TO-247 package outline
0075325_9
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
TO-247 package information
DS9497 - Rev 3 page 15/20
Table 11. TO-247 package mechanical data
Dim.
mm
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
ØP 3.55 3.65
ØR 4.50 5.50
S 5.30 5.50 5.70
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
TO-247 package information
DS9497 - Rev 3 page 16/20
5Ordering information
Table 12. Order codes
Order code Marking Package Packing
STF33N60M2
33N60M2
TO-220FP
Tube
STI33N60M2 I2PAK
STP33N60M2 TO-220
STW33N60M2 TO-247
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
Ordering information
DS9497 - Rev 3 page 17/20
Revision history
Table 13. Document revision history
Date Version Changes
13-Sep-2013 1 First release.
19-Nov-2013 2
Modified: RDS(on) and ID values in cover page
Modified: values in Table 4
Modified: RDS(on) typical and maximum values in Table 5, the entire typical
values in Table 6, 7 and 8
Added: Section 2.1: Electrical characteristics (curves)
Minor text changes
14-Jun-2019 3
Removed maturity status indication from cover page.
Updated title, features and description.
Updated Table 3. Avalanche characteristics.
Added Figure 17. Maximum avalanche energy vs temperature.
Minor text changes
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
DS9497 - Rev 3 page 18/20
Contents
1Electrical ratings ..................................................................2
2Electrical characteristics...........................................................3
2.1 Electrical characteristics (curves) .................................................5
3Test circuits .......................................................................8
4Package information...............................................................9
4.1 TO-220FP package information ..................................................9
4.2 I²PAK package information......................................................10
4.3 TO-220 type A package information ..............................................12
4.4 TO-247 package information ....................................................14
5Ordering information .............................................................17
Revision history .......................................................................18
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
Contents
DS9497 - Rev 3 page 19/20
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© 2019 STMicroelectronics – All rights reserved
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
DS9497 - Rev 3 page 20/20