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SMD ESD Protection Diode
Page 2
AQW-G7005
REV:B
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
Rating and Curves Characteristic
Power Rating, (%)
Fig. 4 - Power Rating Derating Curve
Ambient Temperature, ( °C )
20
40
60
80
100
Mounting on glass epoxy PCBs
Capacitance Between Terminals, (PF)
Fig.2 - Typical Capacitance Between
Terminals Characteristics
Reverse Voltage, (V)
0
5
10
15
25
0 1 2 3 4 5
Reverse Current, ( A )
Fig.1 - Reverse Characteristics
Reverse Voltage, (%)
0 20 40 60 100
100n
1u
10u
10n
80
0 25 50 75 100 150125
20
Electrical Characteristics (at TA=25°C unless otherwise noted)
Symbol Typ
Parameter Min
Max
Unit
Junction capacitance
Conditions
Diode breakdown voltage VBD V
IR = 1mA
Reverse leakage current ILnA
30
CTpF
VR =0V,f =1MHz
5.6 9.4
24
90
VR = 5V
ESD capability kV
±30
Storage temperature
Operation temperature +150 °C
TSTG
Tj
°C
+150-40
ESD
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
Clamping Voltage 8V
Vc
IPP = 11 A, tp=8/20us
IPP = 1 A, tp=8/20us
VcV
12
-40
-
5
-
-
-
-
-
-
-
-
-
-
Reverse stand-Off voltage VRWM 5V
- -
Fig.3 - Clamping Voltage Vs.
Peak Pulse Current
Clamping Voltage, (V)
Peak Pulse Current, (A)
0
16
14
12
10
8
6
4
2
0 2 4 6 8 10 12
Waveform
Parameters:
tr=8us
td=20us