Fiche technique pour CD54,74HC(T)11 de Texas Instruments

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CDx4HC11 Triple 3-Input AND Gates
1 Features
Buffered inputs
Wide operating voltage range: 2 V to 6 V
Wide operating temperature range:
–55°C to +125°C
Supports fanout up to 10 LSTTL loads
Significant power reduction compared to LSTTL
logic ICs
2 Applications
Combining power good signals
Enable digital signals
3 Description
This device contains three independent 3-input AND
gates. Each gate performs the Boolean function
Y = A ● B ● C in positive logic.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
CD74HC11M SOIC (14) 8.70 mm × 3.90 mm
CD74HC11E PDIP (14) 19.30 mm × 6.40 mm
CD54HC11F CDIP (14) 21.30 mm × 7.60 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
1B
1A
2A
2B
2C
2Y
GND
1C
VCC
1Y
3C
3B
3A
3Y
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Functional pinout
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
I TEXAS INSTRUMENTS
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Specifications.................................................................. 4
5.1 Absolute Maximum Ratings........................................ 4
5.2 ESD Ratings............................................................... 4
5.3 Recommended Operating Conditions.........................4
5.4 Thermal Information....................................................5
5.5 Electrical Characteristics.............................................5
5.6 Switching Characteristics............................................5
5.7 Operating Characteristics........................................... 6
5.8 Typical Characteristics................................................ 6
6 Parameter Measurement Information............................ 7
7 Detailed Description........................................................8
7.1 Overview..................................................................... 8
7.2 Functional Block Diagram........................................... 8
7.3 Feature Description.....................................................8
7.4 Device Functional Modes............................................9
8 Application and Implementation.................................. 10
8.1 Application Information............................................. 10
8.2 Typical Application.................................................... 10
9 Layout.............................................................................12
9.1 Layout Guidelines..................................................... 12
9.2 Layout Example........................................................ 12
10 Device and Documentation Support..........................13
10.1 Documentation Support.......................................... 13
10.2 Receiving Notification of Documentation Updates..13
10.3 Support Resources................................................. 13
10.4 Trademarks.............................................................13
10.5 Electrostatic Discharge Caution..............................13
10.6 Related Links.......................................................... 13
10.7 Community Resources............................................13
10.8 Glossary..................................................................13
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (September 2003) to Revision F (April 2021) Page
Updated the numbering format for tables, figures, and cross-references throughout the document..................1
Updated to new data sheet standards................................................................................................................ 1
Moved the HCT devices to a standalone data sheet (SCHS405) ......................................................................1
• RθJA increased for the D package (86 to 133.6 /W) and decreased for the N package (80 to 65.2 /W)......5
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1B
1A
2A
2B
2C
2Y
GND
1C
VCC
1Y
3C
3B
3A
3Y
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Figure 5-1. D, N, or J Package
14-Pin SOIC, PDIP, or CDIP
Top View
Pin Functions
PIN I/O DESCRIPTION
NAME NO.
1A 1 Input Channel 1, Input A
1B 2 Input Channel 1, Input B
2A 3 Input Channel 2, Input A
2B 4 Input Channel 2, Input B
2C 5 Input Channel 2, Input C
2Y 6 Output Channel 2, Output Y
GND 7 — Ground
3Y 8 Output Channel 3, Output Y
3A 9 Input Channel 3, Input A
3B 10 Input Channel 3, Input B
3C 11 Input Channel 3, Input C
1Y 12 Output Channel 1, Output Y
1C 13 Input Channel 1, Input C
VCC 14 Positive Supply
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5 Specifications
5.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage –0.5 7 V
IIK Input clamp current(2) VI < –0.5 V or VI > VCC +
0.5 V ±20 mA
IOK Output clamp current(2) VO < –0.5 V or VO > VCC +
0.5 V ±20 mA
IOContinuous output current VO > –0.5 V or VO < VCC +
0.5 V ±25 mA
Continuous current through VCC or GND ±50 mA
TJJunction temperature(3) Plastic package 150 °C
Hermetic package or die 175
Lead temperature (soldering 10s) SOIC - lead tips only 300 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated
under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
(3) Guaranteed by design.
5.2 ESD Ratings
VALUE UNIT
V(ESD) Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/
JEDEC JS-001(1) ±2000
V
Charged-device model (CDM), per JEDEC
specification JESD22-C101(2) ±750
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
5.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCC Supply voltage 2 5 6 V
VIH High-level input voltage
VCC = 2 V 1.5
VVCC = 4.5 V 3.15
VCC = 6 V 4.2
VIL Low-level input voltage
VCC = 2 V 0.5
V
VCC = 4.5 V 1.35
VCC = 6 V 1.8
VIInput voltage 0 VCC V
VOOutput voltage 0 VCC V
ttInput transition time
VCC = 2 V 1000
nsVCC = 4.5 V 500
VCC = 6 V 400
TAOperating free-air temperature –55 125 °C
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5.4 Thermal Information
THERMAL METRIC(1)
CD74HC11
UNITN (PDIP) D (SOIC)
14 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 65.2 133.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 52.9 89.0 °C/W
RθJB Junction-to-board thermal resistance 44.9 89.5 °C/W
ΨJT Junction-to-top characterization parameter 32.5 45.5 °C/W
ΨJB Junction-to-board characterization parameter 44.7 89.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
5.5 Electrical Characteristics
over operating free-air temperature range; typical values measured at TA = 25°C (unless otherwise noted).
PARAMETER TEST CONDITIONS VCC
Operating free-air temperature (TA)
UNIT25°C –40°C to 85°C –55°C to 125°C
MIN TYP MAX MIN TYP MAX MIN TYP MAX
VOH
High-level
output voltage
VI = VIH or
VIL
IOH = –20
µA
2 V 1.9 1.9 1.9
V
4.5 V 4.4 4.4 4.4
6 V 5.9 5.9 5.9
IOH = –4
mA 4.5 V 3.98 3.84 3.7
IOH = –5.2
mA 6 V 5.48 5.34 5.2
VOL
Low-level output
voltage
VI = VIH or
VIL
IOL = 20
µA
2 V 0.1 0.1 0.1
V
4.5 V 0.1 0.1 0.1
6 V 0.1 0.1 0.1
IOL = 4 mA 4.5 V 0.26 0.33 0.4
IOL = 5.2
mA 6 V 0.26 0.33 0.4
II
Input leakage
current VI = VCC or GND 6 V ±0.1 ±1 ±1 µA
ICC Supply current VI = VCC or
GND IO = 0 6 V 2 20 40 µA
Ci
Input
capacitance 5 V 10 10 10 pF
5.6 Switching Characteristics
over operating free-air temperature range; typical values measured at TA = 25°C (unless otherwise noted).
PARAMETER FROM TO
TEST
CONDITIO
NS
VCC
Operating free-air temperature (TA)
UNIT25°C –40°C to 85°C –55°C to 125°C
MIN TYP MAX MIN TYP MAX MIN TYP MAX
tpd Propagation delay
A, B, or
CY CL = 50 pF
2 V 100 125 150
ns
4.5 V 20 25 30
6 V 17 21 26
A, B, or
CY CL = 15 pF 5 V 8
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over operating free-air temperature range; typical values measured at TA = 25°C (unless otherwise noted).
PARAMETER FROM TO
TEST
CONDITIO
NS
VCC
Operating free-air temperature (TA)
UNIT25°C –40°C to 85°C –55°C to 125°C
MIN TYP MAX MIN TYP MAX MIN TYP MAX
ttTransition-time Y CL = 50 pF
2 V 75 95 110
ns4.5 V 15 19 22
6 V 13 16 19
5.7 Operating Characteristics
over operating free-air temperature range; typical values measured at TA = 25°C (unless otherwise noted).
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
Cpd
Power dissipation capacitance
per gate No load 2 V to 6 V 26 pF
5.8 Typical Characteristics
TA = 25°C
IOH Output High Current (mA)
VOH Output High Voltage (V)
0 1 2 3 4 5 6
0
1
2
3
4
5
6
7
2-V
4.5-V
6-V
Figure 5-1. Typical output voltage in the high state
(VOH)
IOL Output Low Current (mA)
VOL Output Low Voltage (V)
0 1 2 3 4 5 6
0
0.05
0.1
0.15
0.2
0.25
0.3
2-V
4.5-V
6-V
Figure 5-2. Typical output voltage in the low state
(VOL)
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I TEXAS INSTRUMENTS Tesl 1H 0 \ V” ‘ \ ‘ F H—DF on
6 Parameter Measurement Information
Phase relationships between waveforms were chosen arbitrarily. All input pulses are supplied by generators
having the following characteristics: PRR ≤ 1 MHz, ZO = 50 Ω, tt < 6 ns.
The outputs are measured one at a time, with one input transition per measurement.
CL(1)
From Output
Under Test
Test
Point
A. CL= 50 pF and includes probe and jig capacitance.
Figure 6-1. Load Circuit
VOH
VOL
Output
VCC
0 V
Input
tf(1)
tr(1)
90%
10%
90%
10%
tr(1)
90%
10%
tf(1)
90%
10%
A. tt is the greater of tr and tf.
Figure 6-2. Voltage Waveforms Transition Times
50%Input 50%
VCC
0 V
50% 50%
VOH
VOL
tPLH(1) tPHL(1)
VOH
VOL
tPHL(1) tPLH(1)
Output
Output 50% 50%
A. The maximum between tPLH and tPHL is used for tpd.
Figure 6-3. Voltage Waveforms Propagation Delays
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7 Detailed Description
7.1 Overview
This device contains three independent 3-input AND gates. Each gate performs the Boolean function Y = A B
● C in positive logic.
7.2 Functional Block Diagram
xA
xC
xYxB
7.3 Feature Description
7.3.1 Balanced CMOS Push-Pull Outputs
A balanced output allows the device to sink and source similar currents. The drive capability of this device
may create fast edges into light loads so routing and load conditions should be considered to prevent ringing.
Additionally, the outputs of this device are capable of driving larger currents than the device can sustain without
being damaged. It is important for the output power of the device to be limited to avoid damage due to
over-current. The electrical and thermal limits defined in the Absolute Maximum Ratings must be followed at all
times.
The CD74HC11 can drive a load with a total capacitance less than or equal to the maximum load listed in the
Switching Characteristics connected to a high-impedance CMOS input while still meeting all of the datasheet
specifications. Larger capacitive loads can be applied, however it is not recommended to exceed the provided
load value. If larger capacitive loads are required, it is recommended to add a series resistor between the output
and the capacitor to limit output current to the values given in the Absolute Maximum Ratings.
7.3.2 Standard CMOS Inputs
Standard CMOS inputs are high impedance and are typically modeled as a resistor from the input to ground in
parallel with the input capacitance given in the Electrical Characteristics. The worst case resistance is calculated
with the maximum input voltage, given in the Absolute Maximum Ratings, and the maximum input leakage
current, given in the Electrical Characteristics, using ohm's law (R = V ÷ I).
Signals applied to the inputs need to have fast edge rates, as defined by the input transition time in the
Recommended Operating Conditions to avoid excessive current consumption and oscillations. If a slow or noisy
input signal is required, a device with a Schmitt-trigger input should be used to condition the input signal prior to
the standard CMOS input.
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7.3.3 Clamp Diode Structure
The inputs and outputs to this device have both positive and negative clamping diodes as depicted in Figure 7-1.
CAUTION
Voltages beyond the values specified in the Absolute Maximum Ratings table can cause damage to
the device. The recommended input and output voltage ratings may be exceeded if the input and
output clamp-current ratings are observed.
GND
Logic
Input Output
VCC
Device
-IIK
+IIK +IOK
-IOK
Figure 7-1. Electrical Placement of Clamping Diodes for Each Input and Output
7.4 Device Functional Modes
Table 7-1. Function Table
INPUTS OUTPUT
A B C Y
H H H H
L X X L
X L X L
X X L L
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8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information
In this application, this device is used to directly control the RESET pin of a motor controller. The controller
requires three input signals to all be HIGH before being enabled, and should be disabled in the event that any
one signal goes LOW. The 3-input AND gate function combines the three individual reset signals into a single
active-low reset signal.
8.2 Typical Application
Figure 8-1. Typical application schematic
8.2.1 Design Requirements
8.2.1.1 Power Considerations
Ensure the desired supply voltage is within the range specified in the Recommended Operating Conditions. The
supply voltage sets the device's electrical characteristics as described in the Electrical Characteristics.
The supply must be capable of sourcing current equal to the total current to be sourced by all outputs of the
CD74HC11 plus the maximum supply current, ICC, listed in the Electrical Characteristics. The logic device can
only source or sink as much current as it is provided at the supply and ground pins, respectively. Be sure not to
exceed the maximum total current through GND or VCC listed in the Absolute Maximum Ratings.
Total power consumption can be calculated using the information provided in CMOS Power Consumption and
Cpd Calculation.
Thermal increase can be calculated using the information provided in Thermal Characteristics of Standard Linear
and Logic (SLL) Packages and Devices.
CAUTION
The maximum junction temperature, TJ(max) listed in the Absolute Maximum Ratings, is an
additional limitation to prevent damage to the device. Do not violate any values listed in the Absolute
Maximum Ratings. These limits are provided to prevent damage to the device.
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8.2.1.2 Input Considerations
Unused inputs must be terminated to either VCC or ground. These can be directly terminated if the input is
completely unused, or they can be connected with a pull-up or pull-down resistor if the input is to be used
sometimes, but not always. A pull-up resistor is used for a default state of HIGH, and a pull-down resistor is used
for a default state of LOW. The resistor size is limited by drive current of the controller, leakage current into the
CD74HC11, as specified in the Electrical Characteristics, and the desired input transition rate. A 10-kΩ resistor
value is often used due to these factors.
The CD74HC11 has standard CMOS inputs, so input signal edge rates cannot be slow. Slow input edge
rates can cause oscillations and damaging shoot-through current. The recommended rates are defined in the
Recommended Operating Conditions.
Refer to Section 7.3 for additional information regarding the inputs for this device.
8.2.1.3 Output Considerations
The positive supply voltage is used to produce the output HIGH voltage. Drawing current from the output will
decrease the output voltage as specified by the VOH specification in the Electrical Characteristics. Similarly, the
ground voltage is used to produce the output LOW voltage. Sinking current into the output will increase the
output voltage as specified by the VOL specification in the Electrical Characteristics.
Unused outputs can be left floating. Do not connect outputs directly to VCC or ground.
Refer to Section 7.3 for additional information regarding the outputs for this device.
8.2.2 Detailed Design Procedure
1. Add a decoupling capacitor from VCC to GND. The capacitor needs to be placed physically close to the
device and electrically close to both the VCC and GND pins. An example layout is shown in Section 9.
2. Ensure the capacitive load at the output is ≤ 70 pF. This is not a hard limit, however it will ensure optimal
performance. This can be accomplished by providing short, appropriately sized traces from the CD74HC11
to the receiving device.
3. Ensure the resistive load at the output is larger than (VCC / IO(max)) Ω. This will ensure that the maximum
output current from the Absolute Maximum Ratings is not violated. Most CMOS inputs have a resistive load
measured in megaohms; much larger than the minimum calculated above.
4. Thermal issues are rarely a concern for logic gates, however the power consumption and thermal increase
can be calculated using the steps provided in the application report, CMOS Power Consumption and Cpd
Calculation
8.2.3 Application Curves
PG
ON
OC
OFF
Reset
Figure 8-2. Typical application timing diagram
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Power Supply Recommendations
The power supply can be any voltage between the minimum and maximum supply voltage rating located in
the Recommended Operating Conditions. Each VCC terminal should have a bypass capacitor to prevent power
disturbance. A 0.1-μF capacitor is recommended for this device. It is acceptable to parallel multiple bypass caps
to reject different frequencies of noise. The 0.1-μF and 1-μF capacitors are commonly used in parallel. The
bypass capacitor should be installed as close to the power terminal as possible for best results, as shown in
Figure 9-1.
9 Layout
9.1 Layout Guidelines
When using multiple-input and multiple-channel logic devices inputs must not ever be left floating. In many
cases, functions or parts of functions of digital logic devices are unused; for example, when only two inputs of
a triple-input AND gate are used. Such unused input pins must not be left unconnected because the undefined
voltages at the outside connections result in undefined operational states. All unused inputs of digital logic
devices must be connected to a logic high or logic low voltage, as defined by the input voltage specifications, to
prevent them from floating. The logic level that must be applied to any particular unused input depends on the
function of the device. Generally, the inputs are tied to GND or VCC, whichever makes more sense for the logic
function or is more convenient.
9.2 Layout Example
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1A
1B
2B
2C
2Y
GND VCC
1C
1Y
3B
3A
3Y
GND
VCC
3C
2A
0.1 F
Unused
inputs tied to
GND
Bypass capacitor
placed close to the
device
Avoid 90°
corners for
signal lines
Recommend GND flood fill for
improved signal isolation, noise
reduction, and thermal dissipation
Unused
output left
floating
Unused input
tied to VCC
Figure 9-1. Example layout for the CD74HC11
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10 Device and Documentation Support
10.1 Documentation Support
10.1.1 Related Documentation
For related documentation see the following:
HCMOS Design Considerations
CMOS Power Consumption and CPD Calculation
Designing with Logic
10.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
10.3 Support Resources
TI E2E support forums are an engineer's go-to source for fast, verified answers and design help straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
10.4 Trademarks
TI E2E is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
10.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
10.6 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
10.7 Community Resources
10.8 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.
Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
CD54HC11F ACTIVE CDIP J 14 1 Non-RoHS
& Green SNPB N / A for Pkg Type -55 to 125 CD54HC11F Samples
CD54HC11F3A ACTIVE CDIP J 14 1 Non-RoHS
& Green SNPB N / A for Pkg Type -55 to 125 8404801CA
CD54HC11F3A Samples
CD74HC11E ACTIVE PDIP N 14 25 RoHS & Green NIPDAU N / A for Pkg Type -55 to 125 CD74HC11E Samples
CD74HC11EE4 ACTIVE PDIP N 14 25 TBD Call TI Call TI -55 to 125 Samples
CD74HC11M ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM -55 to 125 HC11M Samples
CD74HC11M96 ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -55 to 125 HC11M Samples
CD74HC11MT ACTIVE SOIC D 14 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -55 to 125 HC11M Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
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PACKAGE OPTION ADDENDUM
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(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
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provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
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OTHER QUALIFIED VERSIONS OF CD54HC11, CD74HC11 :
Catalog : CD74HC11
Military : CD54HC11
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
Military - QML certified for Military and Defense Applications
Addendum-Page 2
I TEXAS INSTRUMENTS ‘3‘ V.'
PACKAGE MATERIALS INFORMATION
www.ti.com 9-Aug-2022
TAPE AND REEL INFORMATION
Reel Width (W1)
REEL DIMENSIONS
A0
B0
K0
W
Dimension designed to accommodate the component length
Dimension designed to accommodate the component thickness
Overall width of the carrier tape
Pitch between successive cavity centers
Dimension designed to accommodate the component width
TAPE DIMENSIONS
K0 P1
B0 W
A0
Cavity
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Pocket Quadrants
Sprocket Holes
Q1 Q1Q2 Q2
Q3 Q3Q4 Q4 User Direction of Feed
P1
Reel
Diameter
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
CD74HC11M96 SOIC D 14 2500 330.0 16.4 6.6 9.3 2.1 8.0 16.0 Q1
CD74HC11M96 SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1
CD74HC11MT SOIC D 14 250 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 9-Aug-2022
TAPE AND REEL BOX DIMENSIONS
Width (mm)
W
L
H
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
CD74HC11M96 SOIC D 14 2500 366.0 364.0 50.0
CD74HC11M96 SOIC D 14 2500 356.0 356.0 35.0
CD74HC11MT SOIC D 14 250 210.0 185.0 35.0
Pack Materials-Page 2
I TEXAS INSTRUMENTS
PACKAGE MATERIALS INFORMATION
www.ti.com 9-Aug-2022
TUBE
L - Tube length
T - Tube
height
W - Tube
width
B - Alignment groove width
*All dimensions are nominal
Device Package Name Package Type Pins SPQ L (mm) W (mm) T (µm) B (mm)
CD74HC11E N PDIP 14 25 506 13.97 11230 4.32
CD74HC11E N PDIP 14 25 506 13.97 11230 4.32
CD74HC11M D SOIC 14 50 506.6 8 3940 4.32
Pack Materials-Page 3
GENERIC PACKAGE VIEW J 14 CDIP - 5.08 mm max heigm CERAMIC DUAL IN LINE PACKAGE [I l l 'I I.“ Images above are jusl a represenlalion of the package family, aclual package may vary Refel lo the produd dala sheel for package details. 4040053756 I TEXAS INSTRI IMFNTS
www.ti.com
PACKAGE OUTLINE
C
14X .008-.014
[0.2-0.36]
TYP
-15
0
AT GAGE PLANE
-.314.308 -7.977.83[ ]
14X -.026.014 -0.660.36[ ]
14X -.065.045 -1.651.15[ ]
.2 MAX TYP
[5.08] .13 MIN TYP
[3.3]
TYP-.060.015 -1.520.38[ ]
4X .005 MIN
[0.13]
12X .100
[2.54]
.015 GAGE PLANE
[0.38]
A
-.785.754 -19.9419.15[ ]
B -.283.245 -7.196.22[ ]
CDIP - 5.08 mm max heightJ0014A
CERAMIC DUAL IN LINE PACKAGE
4214771/A 05/2017
NOTES:
1. All controlling linear dimensions are in inches. Dimensions in brackets are in millimeters. Any dimension in brackets or parenthesis are for
reference only. Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This package is hermitically sealed with a ceramic lid using glass frit.
4. Index point is provided on cap for terminal identification only and on press ceramic glass frit seal only.
5. Falls within MIL-STD-1835 and GDIP1-T14.
78
14
1
PIN 1 ID
(OPTIONAL)
SCALE 0.900
SEATING PLANE
.010 [0.25] C A B
fi©©©©©©© ““w“‘¢‘w‘w““‘ ,w@@@@@@ A RLr
www.ti.com
EXAMPLE BOARD LAYOUT
ALL AROUND
[0.05] MAX.002
.002 MAX
[0.05]
ALL AROUND
SOLDER MASK
OPENING
METAL
(.063)
[1.6]
(R.002 ) TYP
[0.05]
14X ( .039)
[1]
( .063)
[1.6]
12X (.100 )
[2.54]
(.300 ) TYP
[7.62]
CDIP - 5.08 mm max heightJ0014A
CERAMIC DUAL IN LINE PACKAGE
4214771/A 05/2017
LAND PATTERN EXAMPLE
NON-SOLDER MASK DEFINED
SCALE: 5X
SEE DETAIL A SEE DETAIL B
SYMM
SYMM
1
78
14
DETAIL A
SCALE: 15X
SOLDER MASK
OPENING
METAL
DETAIL B
13X, SCALE: 15X
MECHANICAL DATA D U1 4)} 0 (3'4) DLASHC SMALL 0U ¥N¥ 4040047 5/M 06/1‘ NO'ES, A AH Hnec' dimensmrs c'e m 'mc'ves ['nflhmeter5> B Th5 drawer ‘5 subje», ,0 change mm: Home, A Body \cngth docs rm mac mod Hoar, p'omswons, (xv gmc bms Mom mm warmers, or gm buns sha‘ nm exceed 3005 (015) eam swce @ Body mm does 101 meme 11mm fish. E Rdererce JEDEC MS 012 mam AB, nter‘ec: flash sfu‘ not exceed 0017 (043) each swde {If TEXAS INSTRUMENTS www.1i.com
LAND PATTERN DATA D (R7PDSOmGl4) PLASTlC SMALL OUTLINE Example Board Layout Sterlazlogpeulyngs (Mole c) —— <—14x0,55 -hhheb&&t="" tmedddifi§n%="" 5.40="" 5,40="" @eeeeeej="" rfihfl§eflhj="" —=""> ——l 2x1,27 Example Non Soldermask Delined Pad Example Pad Geometry (See Note c) F Example l / Solder Mask Opening 7 0 07 f (See Note E) All Armlnd ,/ tzllmss/E oa/lz NOTES: A. All linear dimensions are in millimeters. a, Tnis drawan is subject to cnonae wl'lhuul notice. c. Publlcutl’on chs7351 is recommended tor alternate desl’gns. D. Laser ctming apertures w‘lth trapezoidal walls and also roundlng comers wlll otter better paste release. Customers should contact their board assembly site for stencil design recommendations, Reter tc ch—7525 lor otner stencil recommendations. E. Customers snoola contact their ooard looricotion site lor solder musk tolerances between ond oroond signol oods. {I} Tums INSTRUMENTS www.li.com
MECHANICAL DATA N (R—PDlP-T“) PLASTIC DUAL—IN—LINE PACKAGE 16 P15 SHOWN PWS " A L . [NM 15 a 20 16 9 0 775 U 777 0 SZU '1 USE 3 , 1H HH HH r% r’H r"—1 r’H H1 1 A VAX “9‘69? (191591 (23,37) (25,92) 0 250 (6,50‘ A MN [1145‘ 0142‘ 0.350 new 3 O 240 (6.10), 15 92/ (1832/ (2 .59) (23,58) MSiUO‘ (A AA AA Ari AA AA AA R1 &. VAR1AT1CN M RR AC AD 1 B 0070( (17s) 0015 (111) A 0045 (1,111 g n > , ‘ -) 3.020 (0,51) MW w o 5 (0 35) 0200( 38) MAX f, ), Gnu E Home 1 1‘ 9 fix—1%)” 1 0125’ 1/111 4% 0010 (v.37 ) NOM 31a) U L»- J 0450 (13,92) MAX L 202‘ (0,53) » e c 015 (0,35) / \ a; 00‘s (0,Zb)® / \ 1 1 \\¥,// 11/18 Pm (My > @ 20 Pm vendor upho'v mom/r 17/7037 NO'FS A AH Mnec' mmensmr‘fi: B 1m: drawmq 1s sume m muss (m1111mevem) 0 change mm): nofice /c\ FuHs wumn JEDEC M57001, except 15 an: 20 p171 'r1111mLm body 1mm (01m A) A The 70 p171 and 15m} shmflder Md” 15 a ve'vdnr 0311071, eher NIH Dr 111 wkflh INSI'RUMENTS www.1i.com
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