Fiche technique pour ESD Protection Design Guide de Littelfuse Inc.

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ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAVS
Introduction
Designers of today’s electronic devices have demanded
more functionality with greater flexibility and higher levels
of user interaction. These circumstances have helped in
driving the development of nanometer sized chipsets for a
multitude of user interfaces or ports. The confluence of
these smaller sizes and a wider variety of application types
has made electronic components more susceptible to ESD
and thus require a more robust solution.
ESD Standards:
MILVSTD7883E, Method 3015.7
Historically, analog and digital designers have been
required to have ESD protection "onrchip" to protect the IC
during the manufacturing process. The most commonly
used ESD standard in the manufacturing environment is
the MIL»STD»883E, Method 3015.7. It is also referred to as
the Human Body Model lHBM). This model discharges a
1DDpF capacitor through a 15000 resistor into the device
under test (DUTl. The table below points out the fourtest
levels as defined in the standard.
HBM Contact Discharge Peak Currant
Laval (kV) (A)
1 20.5 0.33
2 :1 0.67
3 :2 1.33
4 :4 2.67
The maximum level required for a typical IC had been 22kV
up until 2007, but today that level has been drastically
reduced to :0.5kV. Obviously, this has helped chip
designers save valuable silicon area for more functionality,
but in turn, it has made the IC much more susceptible to
damage from ESD.
lECelooorarz
Conversely, equipment manufacturers have traditionally
used an ESD standard defined bythe IEC (International
Electrotechnical Commissionl for system or application
level testing. This model uses a 150pF capacitor which is
discharged through a 3300 resistor, The table below
displays the four test levels for contact discharge as
defined in this standard.
IEC Contact Discharge Peak Current
Level (kV) (A)
1 :2 7.5
2 :4 15
3 :6 22.5
4 :8 30
©2016 Littelfuse, Inc
Most all manufacturers require that their equipment pass
Level 4, or xskv, as a minimum, however, some are
looking for increased reliability and require that
their devices pass a much higher level like :15kV or :30kV.
Conclusions:
The system level ESDtest defined by the IEC produces a
substantial increase in peak current compared to the
military standard. lfan IC is rated for 0.5kV perthe MIL-
STD and the equipment manufacturertests this same IC at
8W per the IEC specification, the chip will see nearly a 100
fold increase in the initial peak current li.e. 0.33A vs. 30AM
Ultimately, hardware or board designers must add
supplementary ESD devices to protect these sensitive
chipsets from the high level ESD threats seen in the field.
Solutions:
Littelfuse TVS Diode Arrays (SPA Diodesl are an ideal
choice for suppressing ESD as their switching speed and
superior clamping levels are essential to protect today's
integrated circuits, surpassing the capabilities of MLV,
MOV, and polymer technologies. The TVS Diode Array
portfolio offers a wide range of components to suit the
majority of application needs available in the market today,
and this guide will steer the designer toward the
appropriate ESD component for the particular application
they aretrying to protect.
Some of the applications discussed in this guide are:
USB1.1/2.0/3.D/3,1
HDMI
DVI
Ethernet (10/100/1000 Mbpsl
2.5 and 5 Gigabit Ethernet
XDSL
ESATA
1394a/b
LVDS
Audio ISpeaker/Microphone)
Analog Video
SIM Sockets
Keypad/Push button
CAN bus and LIN bus
Touchscreen
Many of these applications can be found in electronic
devrces such as:
Laptops/Ultrabooks
Portable Medical Devices
Set Top Boxes
MP3/PMP
PDA's
Digital Cameras
LCD TV's Smart Phones
Portable Navigation Devices External Storage
Keyboards/Mouse Switch/Router/Hub
Gaming Consoles
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% ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
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PRODUCT SELECTION GUIDE
General Purpose ESD Protection
Unidirectional ESD Protection
ESD Level I/O Number of Orderable Pan
Series (Contact) Capacitance ‘ VRWM Channels Package Number
2 SOT23r3 SPOBOZBAHTG
SC703 SP05OZBAJTG
3 SOT143 SP0503BAHTG
SOT235 SP0504BAHTG
SP05 :30kV 30pF 5.5V N/A 4 3C705 SPDSOABAJTG
5 301.2376 SPDSOSBAH TG
SC706 SP0505BAJTG
6 M50118 SP05OGBAATG
2 SC703 SP1001>02JTG
SOT553 SP1DD1VDZXTG
3C705 SP1DD1VD4JTG
SP1001 :15kV 8pF 5.5V 2A 4 SOT553 SP1001>04XTG
SC706 SP1001>05JTG
5 SOT563 SP1001>05XTG
SOT963 SP1001>05VTG
SP1DD3 :3DkV 30pF 5V 7A 1 8013723 SP1DD3VD1DTG
501388210402) SP1003>01ETG
SP1006 :30kV 15pF 6V 5A 1 uDFNQ 10201) SP1006>01UTG
SP1011 :15kV 7pF 6V 2A 4 uDFN>6 SP1011>04UTG
350pF 5V 30A SDDSVD'I FTG
150pF 12V 17A SD12’D1FTG
SDXX :3DkV 100pF 15V 12A 1 SOD32310805) SD15’D1FTG
65pF 24V 7A 5132401 FTG
50DF 36V 5A SD36>01FTG
400pF 5V 24A SMDSVDZHTG
150pF 12V 17A SM'IZVDZHTG
SMxx =30kV 100pF 15V 12A 2 SOT2373 SM15702HTG
65pF 24V 7A SMZALUZHTG
50DF 36V 5A SM36>02HTG
SM712 ¢3okv 75pF +12V/»7V 17A 2 SOT233 SM712»02HTG
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General Purpose ESD Protection (cont)
Bidirectional ESD Protection
ESD Level I/O Number of Orderable Part
Serles (Comact) Capac Channels Package Number
1 sc7073 SP1002701JTG
5m” ‘8'“ SPF W M 2 50705 SP1002»02JTG
SP1004 :SkV 5pF 6V 2A 4 SOT953 SP1004»04VTG
Flipchip (02011 SP1005»01WTG
SP1005 :30kv 23pF 6V 10A 1 SOD88210402) 3191005701 ETG
Flipchip (02011 SP1007»01WTG
SP1 007 28W SPF W M 1 SOD88210402) 3191007701 ETG
SP1008 :15kv spF 6V 3A 1 Flipchip (02011 SP1008»01WTG
Flipchip >
SP1012 :15kv 6.5pF 5v 3A 5 0.94x0.61mm SP1012 05WTG
Flipchip >
SP1013 :30kv 30pF 5v 8A 1 0.54x0.29mm SP1013 01WTG
Flipchip
SP1014 :12kV SpF 5v 2A 1 0_54X0_29mm SP1014701WTG
Flipchip ,
SP1015 :ZDkV 5pF 5v 2A 4 0,93x053mm SP1015 DAWTG
SP1020 :30kv 20p1= 6V 5A 1 Flipchip 01005 SP1020»01WTG
SP1021 :12kV 6pF 6V 2A 1 Flipchip 01005 SP1021»01WTG
200p1= 5v 30A SD05C»01FTG
100pF 12v 17A smzomFTG
SDxxc :30kv 75pF 15v 12A 1 SOD32310805) SD15001FTG
50pF 24v 7A SD24C701FTG
30pF 36V 5A SD36C»01FTG
:BDkV 30pF 12v 8A SPHV12701ETG
SPHVxx» :30kv 24pF 15v 5A SPHV15»01ETG
1 D 2 4 2
01ETG :24kV 17pF 24v 3A 50 88 10 0 ) SPHV24701ETG
:15kv 13pF 36V 2A SPHV36»01ETG
:30kv 60pF 12v 8A SPHV12»01ETG»C
SPHVXXV :30kv 46pF 15v 5A SPHV15»01ETG»C
1 D 2 4 2
01ETG»C :24kV 32pF 24v 3A 50 88 10 0 ) SPHV24701ETGVC
:15kv 25p1= 36V 2A SPHV36»01ETG»C
:BDkV SOpF 12v 8A SPHV12701KTGVC
SPHVxxr :3DkV 46pF 15V 5A 1 301333210402) SPHV15»01KTG»C
01 KTG»C :24kV 32pF 24V 3A exposed leads SPHV24701KTGVC
:15kv 25p1= 36V 2A SPHV36»01KTG»C
SP :BDkV 26pF 12v 8A SP12701WTGVCVHV
XX’ +30kv 21p1= 15v 5A SP15»01WTG»C»HV
1WT » » ' 1 Fl' 11‘ 2 1
21v GC :18kV 13pF 24v 3A 'pc we 0 ’ SP24701WTGC7HV
:10kv 10pF 36V 1.5A SP36»01WTG»C»HV
SMZACANA :24kV 11pF 24v 3A 2 SOT2373 SMZACANAVDZHTG
SMZACANE :30kv 30pF 24v 10A 2 SOT23»3 SM2ACANB02HTG
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% ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
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Ethernet and Lightning Surge Protection
ESD Level I/O m Number of Ordereb‘e Part
Series (Contact) Capac nce VRWM (tp- /20u D C nnels Package Number
spin/054 :ZOkV 1.2pF 6V 10A 4 SOT23»6 SRVDS-AHTG
SP2504N :3okv 2.0pF 2.5V 20A 4 uDFN»10 SP2504NUTG
SP3304N :3okv 2.0pF 3.3V 20A 4 uDFN»10 SP3304NUTG
SP4044 :3okv 1.5pF 2.8V 24A 4 msomo SP4044»04ATG
SP4045 :BDkV 1.5pF 33v 24A 4 MSOPJO SP4045704ATG
SP4060 :3okv 2.2pF 2.5V 20A 8 MSOPJO SP4060»08ATG
SP4065 :3okv 2.2pF 3.3V 20A 8 MSOPJO SP4065»08ATG
SP3051 :3okv 2.0pF 6V 20A 4 SOT23»6 SP3051»04HTG
SP3312T :3okv 1.3pF 3.3V 15A 4 uDFN»8 SP3312TUTG
snos :BDkV 3.0pF 5v 25A 2 SOT143 srzosrozcm
3P402o :BDkV 2.5pF 3,3v 30A 1 WT"? SOD323 SPAOZD’MFTG
1 mm) “”309 SP4020»01FTG»C
Huni) 300323 SP4021»01FTG
SP4021 :3okv 2.5pF 5v 25A 1 thidir) ‘08ch SP4021701FTGVC
SW flow W W M MEL?” $3233? SEZSEZEJESC
SRDA05 :30kV 4.0pF 5v 30A 4 SOIC»8 SRDAOSABTG
SRDA3.3 :BDkV 4.0pF 33v 35A 4 selcrs SRDA3.34BTG
sn7o :BDkV 2.0pF 70v 40A 2 SOT143 smorozcm
8Lvu284 :BDkV 2.0pF 23v 40A 4 selcrs SLVUZBABTG
SLVU2.8»8 :3okv 2.6pF 2.8V 30A 8 SOIC»8 SLVU2.8»SBTG
SP2502L :3okv 2.5pF 3.3V 75A 2 saw SP2502LBTG
SP2574N :BDkV 3.8pF 25v 40A 4 uDFNr10 SP2574NUTG
spearaa :BDkV spF 33v 150A 2 selcrs spearaaam
LC03»3.3 :3okv 4.5pF 3.3V 150A 2 SOIC»8 LC03»3.3ETG
SP03»6 :3okv 8pF 6V 150A 2 SOIC»8 SP03»6BTG
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% ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
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Low Capacitance ESD Protection
Series 5:031:21? ggpacitance VRWM :‘t Zonugs) 21:31:35“ Package figfirbaekfle Part
SP1255P :12kv 0.5pF 4v 4A 3 uDFN»6 SP1255PUTG
spasm =8kV 0,65pF 5v 2.5A 4 swore spsomrozuTG
spaooz :12kV DBSpF 5v 4.5A 4 SC70»6 SP3002-04JTG
uDFN»6 SP3002-04UTG
sposoas :12kv 0.85pF 6V 4.5A 4 sonw SPOBOASHTG
sc70»5 SP3003—02JTG
2 SOT553 spsoosrozxm
pDFNrs spsoosrozum
SP3003 :skv 0.65pF 6V 2.5A SC70»6 SP3003—04JTG
4 SOT563 SP3003—04XTG
MSOP»10 SP3003—04ATG
s MSOPV10 spsooerSATG
spasm: :12kV DBSpF 5v 4A 4 SOT563 3P3004o4>
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% ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAVS
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Low Capacitance ESD Protection (cont)
$43.13;? ggpacitance V ’ ‘ 2152:2215 Package nglfirbaebr‘e Part
3535313131wa :szv 0.30 pF 7v 1 0201 DFN RF39177000
35133392201311. 122W 015 pF 7V 2.5A 1 0201 DFN RF3918-000
35:53:32“ UN» :22kv 030 pF 7v 2.5A 1 30,3502 RF3920—000
351833322“ BN» :22kv 015 pF 7v 2.5A 1 30,3502 RF3922—000
Sggggggmwe’ :22kV 030 pF 7v 2.2A 2 fggéggg RF3925—000
Sggggggwwe’ :22kV 030 pF 7v 2.2A 4 1004 DFN RF3923—000
3555338202067 :ZDkV 0,20pF 7v 2.0A 2 f’g’géggg RF294GDOO
ggzsggggzowe :20kv 0.20pF 7v 2.0A 4 0802 DFN RF3076—000
ggzsgggmwe :ZDkV 0,20pF 7v 2.0A 4 1004 DFN RF3077VDOO
ngggggaoeue» :ZDkV 0,20pF 7v 2.0A 5 1103 DFN RF307EDOO
ggzsggggmww :20kv 0.20pF 7v 2.0A 1 0201 DFN RF2102—000
351353301311. :ZDkV 0,10pF 7v 2.0A 1 0201 DFN RF2193DOO
$553382“ UN’ :20kv 0.20pF 7v 2.0A 1 €33ng 102943000
$15533?“ BN’ :20kv 0.10m: 7v 2.0A 1 $33382 RF2945-000
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% ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
minisenppliea I New Dullvelrd
APPLICATION SPECIFIC DEVICE SELECTION
USB1.1
Considerations:
Each pon cperaies at either 1,5Mbps or 12Mbps llow and lull speed respeciivelv)
Parasilic capacitance should be taken into account alihcugh these reIallver slcvv speeds can loIerale lens of p'lcofarads
Requires 2 channels oldala line prcieciipn per port lie DxI
A 4 channel device can be uselul 'lf protecting a USE stack of 2 pans to make me ESD foolpnni as small as possible
Vslls can be protected separately wiih a single channel devlce in an 0402 or 0201 form lacicr (0402 shcwnl
Protection for Vaus is oplipnal and can be done via a single channel device or included with the protection lei D2 in a single 3 channel device
such as (he SPDSDS
Application Schematic:
USB Port USB Controller
PTC:1206L1108LVR
Vaus
D+
D,
SPOEOZ
SP'IOD3
GND _
Recommended TVS Diode Arrays:
SPOSOZBAJTG t30kV 50pE 2 5 5V SC7073
SPOSOSEAHTG t30kV 50pE 3 5 5V SOT143
SP1 OOIrOZXTG :I 5kV IZpF 2 5 5V SOT553
SP1 00301 ETG :SOKV SOpF l 5 0V SODBBZ I0402I
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% ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
eyarteamtiea l New Meta
APPLICATION SPECIFIC DEVICE SELECTION
USBZ.0
Considerations:
Each port can operate up to 480Mbps
The high data rate requires a low capacitance device to preserve signal integrity
Requires 2 channels oidala line protection per pcn (Le, Dzl which can be done via array or discretely
A 4 channel device can be useiul if protecting a use stack on ports to make the ESD rcotphm as small as possible
Protection for Veus is optional and can be done via a single channel device like the SP1003
Application Schematic:
use For! PTC21206L11DSLVR use Controller
Veus
D+
D»
SP'IOD3
SP3003/ SP3014 7
GND
*Packages shown as transparent
USB Port
PTC21206L11OSLYR USB Controller
Veus
D+
D»
T '-' SP‘l 003
SP3030 IX2)
GND
Recommended TVS Diode Arrais:
uDFNB
SPSOOEOZUTG t8I
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% ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
Ewarilxeitppllvd l Anzweu MM
APPLICATION SPECIFIC DEVICE SELECTION
USB3.0 (Two Device Solution)
Considerations:
Each pon depending upon what it's connected to can operate:
Up to sepps over the new super-speed data pairs, SSTXX and ssex:
Up to 480Mbps on the legacy data pair, D2
Requires Achennels oiultra-lowcapacitance protection farthesuper-speed data pair (Le ssrx: and SSRXtI
Requires 2 channels of protection for the legacy D: data pair
Protection for Veus is omional and can be done via a single channel device like the SP1003
Application Schematic:
USB Port USB Controller
PTC:1206L15DSLVR
Veus I:I
D+
D,
SF3003/SP30I 4 7
SP1 003
T IC
SSTX+
SSTX»
GND -|| SP0524P
SSRX+
SSHXV
*Packages shown as transparent J1.-
Recommended TVS Diode Arrays:
pDFN6
930030sz t8I
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% ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
orarlisenppliee l News DuIlvelrd
APPLICATION SPECIFIC DEVICE SELECTION
USB3.0 (Integrated Solution)
Considerations:
Eacn port depending upon what it's connected to can operate:
Up to 5Gbps over the new super-speed data pairs, SSTX: and SSRXs
Up to 480Mbps on the Iegacy data palr, D2
Requires 4 channeIs ol ultra-low capacitance protection for tne super-speed data pair tie, ssrx; and SSRXtI and 2 channels ot protection
lor the legacy D2 data pain Tne SP3012 shown beIow integrates all 6 channels ol protection into a smalI form factor pom-14 package
Protection for Vaus is optional and can be done via a single channel device like the SP1003
Application Schematic
USB Port pm 1205L1505LYR USB Controller
Vaus
SP1003
SSTX+
SSTXV ,C
ssax+
SSRX»
GND .l SP30l2
D+
*Packages shown as transparent T
Recommended TVS Diode Arrays:
pDFNrI 4
SPBOIZOGUTG :IZKV 0 SPF 6 5V ‘3 5x1 35mmI
SP1 00301 ETG :SOKV SOpF I 5V SODBBZ I0402I
©2016 Littelfuse, Inc v.1510»2
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% LlflelquE ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
mannmum I AmweuDeIIveIEd
RF3077VODO
E
SP‘IOOS orSP1006 E
SBU2
__—E—_
—E’
RF30777000
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
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APPLICATION SPECIFIC DEVICE SELECTION
HDMI
Considerations:
Each port has 3 dficmnnal paws of data (1 e D01,D1:,D2:] pIuS a dock (CLKi)
ForHDMI 1 1,1 ZIhcmaXImumthroughpul IsamtaI oMSSGbps (1 SSGbps pcrlanc)
For HDMI1371AthemaxImumthroughpulIs a1ma1 of 10 ZGbps (3 AGbps per Ianc)
For HDMI 2 Da Ihc maxlmum \hroughpui IS a \otaI of 18 ths (6 Oths pm Iane)
To maintam me wiiorcnIIaI Impedance par “10 HDMI CompIIancC Test Specmcanon (and consequently sIgnaI InlcgrltvI a very Iow
capacmance dcwcc mus1 be used
To maintam me dwrmnuaI Impedance me dosIgncr shouId avold usmg so” angIcs and was
Thls can be accom pushed by me use of an ESD dcwcc that offers a "slraIg hmveugh" Voutmg scheme
chwvos IZchanncIs of prctccllon 5 TMDS data paws. SDA, SCL, CEC, and HPD and me smmzoe (sz couId ae censmcrcd as wclI
Application Schematic:
HDMI Port Chipset
‘Packages shown as transparent
D2+
GND -. .-
DZ' SP0524P
D1+ RF3077000
GND 4 ._
D1»
D0+
GND —. ._
D07 SPDSZAP “3
CLK+ RF30777000
GND -0 .-
CLK»
SDA
SCL
SP0524P
RF30777000
CEC
HPD
T GND ‘7' GND =
Recommended TVS Diode Arrays:
SP0524PUTG :IZKV 0 SIDE 4 5V pDFNrIO (2 5x1 0mm)
RF30777000 :IZKV 0 2pF 4 6V pDFNrIO I2 5x1 0mmI
SP3012706UTG 1I2I
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
Anglia-1 I New New:
APPLICATION SPECIFIC DEVICE SELECTION
HDMI (Includes protection for Ethernet and 5V power)
Considerations:
Same as noted on previous page except the protection scheme ooiow includes options for piotocting addillonal Ethernet and 5v power pins
Other combinations cxlst Such as Using 3X SPOSZAF and IX 5F3003702UTG (for EtIVDmDII and "may Combinanons using discrctcs
Application Schematic:
HDMI Port ‘Package IS shown as transparent Chipset
D2+
GND
[’2’ SP0524P/
01+ RF30777000
DO~ SP0524P/
RF30777000
SPSO’I 206
CEC
PWR
HEC+
HEC»
Recommended TVS Diode Arrai ‘
pDFNJO
SPOSZAPUTG tiZkV o 5pF 4 5v {2 5X1 0mm
pDFNri 0
RF30777000 tiZkV o ZpF 4 6V {2 5X1 0mm
pDFNi 4
I3 5x1 35mmI
SP303001ETG :ZOKV 0 SpF i 5V SODBBZ I0402I
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SP3012706UTG tiZkV 0 SpF 6 5V
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
ExpelilseApleed I new» Deiluled
APPLICATION SPECIFIC DEVICE SELECTION
Display Port
Considerations:
Each part has a main link which contains 4 diiferemial pairs or lanes (Lea MLDt, MLix, MLZt, and MLStI
Thetolal throughput is 32,443hps or8,iGbps per lane
The cIock signal is embedded in the lanes and does not existseparalely asin HDMI
There IS also an auxlliary channel (AUXtI, hm pIug detect (HPDI, and power pin IFWRI as well,
To malnlain lne dliieremiaI impedance Iand consequenlly slgnaI lnlegrllvi a very low capacnance device must he used
To malnlain the diiferemiaI impedance me designer should avcld uslng 900 angles and vies
This can be acccrnpllshed by the use of an ESD devlce lhal clrers a ”straight-through” routing scheme
Requires 12 channels of prcleclion per pcn IMLDx, MLls, MLZt, MLSt, AUXx, HPD, and PWR) and 2, swan-owns would be another
Option
Application Schematic:
DisplayPon Chipset
*Package is shown as transparent
MLO+
GND -0
MW SPOSZAP/
ML1+ RF3077<000 gnd="" -0="" mh-="" ml2+="" gnd="" -0="" mlz'="" sp0524p/="" ml3+="" rf30777000="" gnd="" -0="" ml3—="" auxa="" gnd="" -0="" au)“="" sp0524p/="" rf30777000="" hpd="" pwr="" t="" gnd="" recommended="" tvs="" diode="" arrays:="" sp0524putg="" tizkv="" 0="" spf="" 4="" 5v="" pdfnrio="" (2="" 5x1="" 0mm)="" rf30777000="" tizkv="" 0="" zdf="" 4="" 6v="" pdfnrio="" (2="" 5x1="" 0mm)="" rf3920000="" 122kv="" 0.3pf="" i="" 6\/="" sodbsz="" i0402i="" spsoizogutg="" tizkv="" 0="" spf="" 6="" 5v="" pdfni4="" (3="" 5x1="" 35mmi="" ©2016="" littelfuse,="" inc="" v.1510»2="" 15="">000>
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% l-luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAVS
:ierrinenpanee I Am» penned
APPLICATION SPECIFIC DEVICE SELECTION
DVI IDi ital Video Interface)
Considerations:
A DVI pen may have single or dual Iink capability
Each link has a differential Ianes oi daia Ii e DOt, D12, 02:) plus a clock ICLKtI
For single Ilnk, the maxlmum inroughpui can approach a ieial oi4i955bps or IiBSGbps per lane
Fordual link, rhe maximum throughput can approach a rural of BGbps or zievebps per lane
To mainiain signal Integrity a very Iow capacitance device must he used
To maintain the dilreremial impedance the designer should avoid using 90° angles and yias
This can be accomplished by the use of an ESD device inai oliers a “straight-through” routing scheme
Requires 8 channels cl prorecrion per pen was, D12, 02;, CLKtl and rhe Vcc should not be connected if backdr‘lve is a concern
Application Schematic:
*Packages shown as transparent
DVI For! DVI Chipset
D2+
G N D
D27
SP3003
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
Expenl'aEApplle-i i Amos petunia
APPLICATION SPECIFIC DEVICE SELECTION
Ethernet, Intra-building Lightning Immunity (GR-1089) Nan-POE
Considerations:
10/100/1000 relates to the data rate In Mbps iiie, 10Mbps, iouMbps, and ioooMbpsl
For 10 Base-T, data is transmitted over 2 UTP (unshielded twisted pairsI using a lfllVIHz clock
For 100 Base-TX, data is transmitted over 2 UTP using a 125MHz clock
For 1000 Base-T data is transmitted over 4 UTP using a 125MHz cIock
For these data rates the parasitic capacitance needs to be taken into account to preserve signal integrity (Ire, rate and react. capabilitiesl
The 4 data lines below ITxx and thi are being protected against intra-buiIding lie, 100A, ttt2/10l1si lightning transients by a twostage
protection scheme
tuqubps Ethernet (or thEl will require 8 channels oi protection for the 4 differential pair so the below scheme should be replicated for the
remaining 2data pair
Application Schematic:
RJ-45 *Packages shown as transparent
Connector F1 Ethernet PHV
J— ’V ‘ ‘ O Tx+
. TX»
. Rx+
F2
N
‘\a
F3
§OOOOOO$YE
‘\a
F4
LC03 Ix2)
F1:F4 = 0461 125 TeleLink Fuse
PHY ND
G = SP305i
Recommended TVS Diode Arra s:
LC0373 3BTG t30kV WSOA 4 SIDE 2 3 3V SOICVS
SP3051r04HTG :30kV 20A 2 OpF 4 6V $07236
SHVOSAHTG :20kV WOA i 2pF 4 6V SOT236
norm 0
SP2504NUTG :30kV 20A 2 OpF 4 2 5V {2 6X2 6mmI
norm 0
SP2574NUTG :30kV 40A 5 OpF 4 2 5V {3 0x2 0mm’
norm 0
SP3304NUTG :30kV 20A 2 OpF 4 3 3V {2 6X2 6mmI
SP404404ATG :30kV 24A i SpF 4 2 8V MSOPriO
SP404504ATG :30kV 24A i SpF 4 3 3V MSOPriO
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% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
meriiserppiiaa l mm Datum
APPLICATION SPECIFIC DEVICE SELECTION
Ethernet, Inter-building Lightning Immunity (GR-1089)
Considerations:
iO/IODHDOO relates to the data rate in Mbps (i e loMbps, iDDMbps, and 1000Mbpsl
For 10 Base? data is transmitted over 2 UTP (unshielded tWisted pairsl using a tom Hz cIock
For 100 BaschX, data is transmitted over 2 UTP using a 125MHz clock
For 1000 Basel data is transmitted ovcr4 UTP using a 125MHz clock
For these data rates the parasitic capacitance needs to be taken into account to preserve signal integrity ti e rate and reach capabilities)
The A data lines below are being protected against IntolrbulIdlng (r e worse casesouA, t»:2l10psl lightning transients by a tworstage
protection scheme The A channel. 5F2504N or SP330AN should be selected based on the operating voltage of the PHV and if discrete devices
are preferred the SP4020 and SPAOZ1 Series are ideal
The standoff voltage ofthe SEP Series dOVICG Will be dictated by the use of PoE If POE is present the SEP0640 should be used: otherwise,
the SEPDDED is ok for noanoE applications (Note. nghsl voltage options are oval/able for atyplcal POE voltages )AIso, FOE applications WIII
require lntcrpowcrlng pair protection since surges are applied between the center taps (Mode A and Mode E power connections are surged)
1000Mbps Ethernet (or iGbE) Will require 8 channels of protection for the 4 differential pair so the below scheme should be rclecach for the
remaining 2 data pair
Application Schematic:
RJ745 SEP064 2 ‘Packages shown as transparent
Connector FI * Ethernet PHV
I 1 J— Tx+
0 F2 E Tx’
: SP3304N "‘il'
. PHY
GND
F3
. Rx+
‘8 I I l RX»
F4 J—
F’I:F4:0461 1.25 Telellnk Fuse T
Recommended TVS Diode Arra s:
SP2504NUTG pDFNJO (2 6x2 6mm)
SP2574NUTG pDFNJO (3 0x2 0mm)
SP3304NUTG uDFIW 0 (2.6x2.6mm)
SP4044~04ATG MSOPJ 0
SP404504ATG MSOPJ 0
SPAOZCLOW FTG SOD323 I0805I
SP4021701 FTG SOD323 I0805I
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% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
Ewerti'oEApprd I mm Datum
APPLICATION SPECIFIC DEVICE SELECTION
Ethernet, Tertiary Only Lightning Immunity (General)
Considerations:
10/100/1000 relates to the data rate in Mbps tiret ioMbps, 100Mbps, and lOOOMbpsI
For 10 Base-T, data is transmitted over 2 UTP (unshielded twisted pairsi using a lfllVIHz clock
For 100 Base-TX, data is transmitted over 2 UTP using a 125MHz clock
For 1000 Base-T data is transmitted over 4 UTP using a 125MHz cIock
For these data rates the parasitic capacitance needs to be taken into account to preserve signal integrity the, rate and reach capabilities)
Some designers choose to use a robust translorrner in their design to act as the tirst line of protection against an incoming surge event
This is usuaiiv done to minimize the parasitic capacitance on the data line and to save on the cost of thesecondary protector (ire, Iine sidei
Using such a technique wilI require a robust PHV side protection device and one such option is the SLVU2,8-4 shown beIowr It should be
noted that this device wiIl onIy provide diflerentiaI protection between the data pairs,
If longitudinal and differential protection are required, the SP3051 or SP4060/SP2504N/SP3304N can be considered as aIternatives for an
array format, For discrete implementations, the SP4020 and SP4021 Series are idealv
Protection tor ID HODMbps is shown below For 1000Mbps (or iGbEI interfaces, two SLVU2,8-4BTG devices are required
Application Schematic:
RJ-45
Connector Ethernet PHV
Tx+
TX»
Hx+
Rx»
SLVUZBrd
*Package is shown as transparent
LOOOOOOOOL
w
Recommended TVS Diode Arrays:
SLVUZ.B~48TG SOICVB
SLVUZ BBETG SOIC8
SP406008ATG MSOPB
SP406508ATG MSOPB
SP2504NUTG pDFNiO (2 6x2 6mm)
SP2574NUTG uDFNiO (3 0x2 0mm)
SP3304NUTG uDFNi 0 I2 6x2 6mmi
SPAOAAVOAATG MSOPri O
SP404504ATG MSOPri 0
SPAOZOOi FTG SOD323 I0805I
SP402170iFTG SOD323 I0805I
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% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
Expem'aEAppIIEd I Answers bellman
APPLICATION SPECIFIC DEVICE SELECTION
Ethernet (ESD only)
Considerations:
Some Ethernet ports only need to be protected for ESD and not lcr lightning induced transients
These are sometimes relerred to as ”2M" ports or 2 Meter ports that have very short CAT5 cable installations
Parasitic capacitance should be taken into account especially tor 1GbE
The 4 data lines below in: and thI are being protected against ESD by a low capacitance sposoas which is suitable for all
Ethernet data rams
Additionally, any Iow capacitance SPEDxx device is suitable lor any ”ESD onIv” Ethernet application
luqubcs Ethernet lcr leEl will require 8 channels oi protection for the 4 differentlaI pair so the below schenie can be replicated or the 8
channel SPSOUS-DBATG can be used,
Application Schematic:
RJ-45
Connector Ethernet PHV
‘1 _l— . Tx+
O
. . TX»
0
O
. Hx+
O
0
.JB RX»
PHVGND — SPOSOAS
Recommended TVS Diode Arrays:
SP0504SHTG 1I2I
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
etperineaaalied l Answers oeiiniea
APPLICATION SPECIFIC DEVICE SELECTION
2.5 and 5.0 Gigabit Ethernet
2‘5 and so GbE is an evolutionary step above 1 GbE speeds, using the same installed inlrastructure to achieve signiliaantly more data
throughput at aflordable price points Using existing cabling, and existing PCB technology, solutions providers are able to ofler laster data
rates, at modest premiums to their standard 1GbE olferingsr It provides an intermediary step between legacy and 10 one offerings
Considerations:
Increased speeds necessitate ”straight lhru” routing, minimizing the negative elfects pl stubs, and the corresponding ailect on signal
Integrity
Tertiary protection, or PHV side protection placed alter the magnetic, the protection closest to the PHV
To reduce Electro Magnetic lnterlerence (EMII, some designs employ Ethernet pairs routed on the top and bottom side olthe PCB
MSOP-lfl permits "straight thru” routing and doesn’t not require ”Fan In" or "Fall Out” on PCB, enhancing signal integrity
Low capacitance permits high data rates, does not degrade signal integrity,
Application Schematic:
*Packages shown as transparent
Ell
Ell
Elli
Ell?
Ethernet PHV
TPO+
TFO—
TP1+
TF1-
TP2+
TF2-
MSOPV10
TP3+
TF3-
SP404X IXZ)
SP404¢04ATG :SOKV 24A I SpF 4 2 8V MSOPVIO
SP404504ATG :SOKV 24A I SpF 4 3 3V MSOPVIO
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% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
ttpeiinenppiini I Am» Denim
APPLICATION SPECIFIC DEVICE SELECTION
xDSL, lntra-building Lightning Immunity (GR-1089) and ESD
Considerations:
There are many options for xDSL today inquding ADSLx and VDSLx aII with varying data rates
In generaI ADSLx runs between 8-24Mbps and VDSLX provides swamps and at these data rates capacitance of the suppressor needs to be
considered
AII impIementations are done over Iegacy POTS wirlng (TIP and RINGI and the saw is shown below capabIe oi protecting against intra-
buiIding (ire, 100A, th/lflpsi Iightning transients when situated behind the transiormer
differential protection is needed, then the SIDACtor SDPXXXXTDZSGS /SDPxxxxTUZ$GB series can be considered
A Iine side protection device is optionaI and its seIection will depend on the transient and whether or not the appIication invoIves a wet or
dry Ioop
Application Schematic:
FiJr11 Connector xDSL PHV
. . TIP
. RING
VREF
ill—
GND
SH70
Recommended TVS Diode Arrays:
SR7002CTG :SOKV 40A 2 GDP 2 70V SOT143
SOD323
SP4022701FTG :SOKV 15A 2 OpF 1 12V I0805I
SOD323
SP4023701FTG :SOKV 12A 2 OpF 1 15V I0805I
SOD323
SP402¢01FTG :SOKV 7A 2 OpF 1 24V I0805I
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% Liltelluse“
ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
ExpErtiSEApplw-i l Arum new”:
APPLICATION SPECIFIC DEVICE SELECTION
T1/E1/J1 Carrier
Isolation Requirements:
If the LC03 device IS used on the line side olthe coupling transformer, men ground rererence pins 2, 3, 6, and 7 should not be connected to
ground
Power Fault Requirements:
The TeleLrnk fuses F17F4 provide overcurrent protection that complies With the GRri089, lTU K20/21, ULGOQSW llEC60950i /
ENGOBSW and VD/T 950 power fault requirements
Lightning Immunity Requirements:
The 4 data lines below are protected against intrebuilding lightning transients (i 00A, tp:Z/i Ops for up to 2 pairl.
The L003 diverts the maiorrtv oi energy away from the transformer, but any common mode energy that does get coupled across
the transformer rnterwrndrng capacrtanoe Will be diverted to GND by the SP3051 The SP305i can be connected to ground on the
PHV side of the transformer to protect against common mode transrents
Alternatively, the SHDAOS or SHDAS 3 could be used In place of the SP305i if a more robust devrce rs needed These would be
the best alternatives in protection on the line srde IS not used
Application Schematic:
F1 *Package is shown as transparent
Transceiver
.- 0 Rn?
. Rene
Trrr=
I I .
ans
F4
LC03 IXZ)
F1:F4 = 0461 1.25 TeleLink Fuse
GND :- SP305‘I
Recommended TVS Diode Arrays: I
LCOC’rSGBTG 130kV iBOA 4,5pF 2 3.3V SOIOB
SPOC’prTG :BOKV i50A EVODF 2 3V3V,6V SOIOB
SP3051704HTG :SOKV 20A 2 OpF 4 6V SOTZC’rG
SRDAOMETG :SOKV 30A 4 OPE 4 5V SOIC8
SRDA3 METG :SOKV 35A 4 OpE 4 3 3V SOICS
SP4044¢04ATG 130kV 24A prF 4 2.5V MSOPVI O
SP404504ATG 130kV 24A prF 4 3.3V MSOPVI 0
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% Littelluse“
ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
Expuh'aEApplw-i I Am» new”:
APPLICATION SPECIFIC DEVICE SELECTION
eSATA
Considerations:
eSATA is a subset of the SATA protocol that uses 2 dlflerential pairs for communication
Four lines need to be protected per pon (Le TX: and Rle
Currently eSATA ls capable of running raw data rates of LEGbps (Gen 1) and SIOGDDS (Gen 2), as well as SATA-IO at 6,0 Gbps
These high bus speeds require very low capacitance devices m prevent signal degradation, and m ma‘rmain the line rmpedance the designer
should avoid usrng 900 angles and vlas
A single 4 channel device such as the SPDEZAP can be used or alternatively A discrete SP3030's could be used
Application Schematic:
eSATA Port
GND ..
eSATA Interface
TX+ .
*Package Is shown as transparent
TXV
IC
GND
RX-
RX+ SPDSZAP/ RE30777000
GND 4
= GND
Recommended TVS Diode Arrays:
SP0524PUTG :1 2kV 0 SIDE 4 5V pDFNaI 0 (2 5x1 0mm)
RF30777000 :1 2kV 0 2pF 4 6V pDFNaI 0 (2 5x1 0mm)
RFSQZGOOO :ZZKV 0 SIDE 1 6V SODBSZ I0402I
SP303001ETG tZOKV 0 SIDE 1 5V SODBSZ I0402)
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% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
Ewuh'aEApplizd I Amen Denim
APPLICATION SPECIFIC DEVICE SELECTION
1394alb
Considerations:
1394a IFireWire 400 or 5400) was the original (1H generaiioni implementation
AlIowed idr two connectors, powered is pini and unpowered (4 pin)
Data rates up to AooMpps using 2 dilferentiai pair
1394b IFireWIre 800 or $800) was (he 2"" generation
Required a new 9 pin connector but was backwards compatibie id 5400
Data rates up to BDflMbps using 2 dilferentiai pair
1394b also had provisions for iSOOMbps and SZOOMbpS (or $1600 and SSZOOI
Uses same 9 pin connecior as 5800
5800, $1600, and 53200 require very low capacitance devices ier me high speed data raies
Protection 0” data lines is needed iie TPB: and TPAtI and can be done with an array or win discreie low capaciiance devices
Application Schematic:
1394b For! SP3003 1394 Interface
TFBr
TPB+
|- GND
TFAV IC
TPA+
*Package is shown as transparent
PWR
SP1003
Recommended TVS Diode Arrays:
SP3003704ATG t8I
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
ztaertnehaaueu I Arum Datum
APPLICATION SPECIFIC DEVICE SELECTION
LVDS (Low Voltage Differential Signaling)
Considerations:
LVDS is a low noise, low-voltage signal scheme that uses a small curreht ltvpioallv 3,5mAl to generate a voltage drop across a 100 resistor
to convey information or data
Data rates can vary perapplicatlon but the ANSlfl’lA/EIA-GAA-A standard recommends a maximum ol655Mbps
The medium/high speed bus requires a low capacitance device in topF range ltvoicallvl
LVDS schemes will varv in terms of the total number oi channels used
Protection olE data lines is shown below lie, CLK: and AxtI
Application Schematic:
LVDS Interface LVDS Controller
CLK+ O
CLK» I
A0+ 0
A0» .
A1+ . lc
Air 0
A2+ .
A2»
SP4060 _ GND
Recommended TVS Diode Arrays:
SP406008ATG t30kV 20A 2 2pF 8 2 5V MSOPVI 0
SP406508ATG t30kV 20A 2 2pF 8 3 3V MSOPVI 0
SP405CLI ZUTG :SOKV 20A 5 OpF I2 2 5V uDFNaI 2
SHV05—4HTG :20kV IOA I 2pF 4 6V SOT236
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% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
Ewelil'aEApleEd i Arum oatimaa
APPLICATION SPECIFIC DEVICE SELECTION
Audio (Speaker/Microphone)
Considerations:
Audio ports typically have signals that swing above and below GND I'ltet azusw
If no DC bias is appIied, a bidirectional protection device should be used as these devices w‘lIl not cIip the analog signal
Protection oi 2 data lines is shown below (Let Left and Right] with an array and with discrete devices
Some audio ports WIII bias the data bus so that the signal never swings beIow GND (its, 0-5VI
If a bias is applied, a unidirectional on bidirectional protection device could be used as neither device would clip tne analog signal
The SPIDDl-DZXTG is a good option in this case (not shown for Lei! and Right but is listed belowI
Application Schematic:
Audio For! Audio Codec
Left T
Right
IC
SPTOOZVOZ
GND —_-
Audio Port Audio Codec
Left 0
Right
GND- -_-
SP1005 IXZ)
Recommended TVS Diode Arra
SP1 OOZOZJTG SC705
SPIOOSOIWTG FIlpcI'llp I0201)
SPHV1 2701 ETGC SODBBZ I0402I
SP1 2701 WTGVCVHV FIipcI‘iip I0201)
SP100501ETG SODBBZ I0402I
SP1001702XTG SOT553
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% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
ExpelllseApplle-i I new new”:
APPLICATION SPECIFIC DEVICE SELECTION
Analog Video
Considerations:
Analog video pons lypically have signals that swing above and beIow GND lie, 22w
A bidirectional protection device snould be used as inese devices w‘lII not clip lhe analog signal
S-Video, Composile, and RF/CoaxiaI are a lew olthe common low-speed analog video slgnaIs in use today
Typical bus speeds WIII not exceed SMHz so capacitance is not much of a concern
Protection 0' the lour are shown below IV, C, Video, and RFI
Application Schematic:
Video For! Video ADC
. Luminance
. Chrominance
Video 0 Composite
RF Coaxial
IC
SP1004
7 GND
Recommended TVS Diode Arrays:
SP1004»04VTG :8kV 2A SPF 4 6V SOT953
SP1008-01VVTG :15kV 2A 8pF 1 6V FIlpchlp (0201)
SP1 (10701va :8kV 2A SpF 1 6V FIlpchlp (0201)
SP1007701ETG :8kV 2A SpF 1 6V SODBBZ I0402I
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% Liltelluse“
ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
ExpelllseApplled l Amen Delluled
APPLICATION SPECIFIC DEVICE SELECTION
Keypad/Push Buttons
Considerations:
Keypads and push buttons on electronlc devlces are particularly susceptible to ESD due to constant human interaction
Most are DC switches that operate at less than 5v, and lor most appllcalions capacitance will not be a concern
The number of ports will vary with the particular applicatlon, but as an example, 4 data lines are shown below he,le
For space constrained applications the smoos orSP1005/8P1008 may be considered as they are 0402 and ozoi footprints, respectively
Application Schematics:
Keypads I/O Controller
P1 I
P2 .
P3 0 IC
P4
GND T SPloOl
Keypads I/O Controller
P1 0
P2 I
P3 1 IC
P4
GND SP1003IX4)
Recommended TVS Diode Arrays:
SP1001r04XTG :1 SkV 2A 12pP 4 6V SOT553
SP1003rO1ETG 1:30KV 7A SODF 1 5V SODBSZ I0402I
SP100501WTG saokv loA 30pF l 6\/ Fllpchip 10201)
SP100301WTG 1:15KV 2A BpF 1 6V FIlpChip I0201)
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% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
mmmwa I mm mm
APPLICATION SPECIFIC DEVICE SELECTION
SIM Socket
Considerations:
The SIM (Subscriber Identification ModuleI card has 3 data Iines that are low-speed and low-voltage
Given me low speed of me signals, me capacitance will not be a concern
Protection oi the 3 data lines and Vaus are shown beIow Ii‘e, CLK, DATA, RESET, PWRI using a single A channeI device and aIternatively
discrete 0402 or 0201 devices couId be used as welI
Application Schematics:
SIM Socket SIM Controller
Vaus 0
DATA .
CLK T
RESET IC
SPIOIS
'-' GND
Recommended TVS Diode Arrays:
SP1012705WTG 115W 6,5pF 5 5v FIIpchIp 0.94m 6Imm
SP101504WTG :ISKV 65pF 5 5V FIIpChIp 093X0 53mm
SP3002704UTG :IZKV 0 BSpF 4 6V UDFN6 (1 6x1 6mm)
SP100301ETG :SOKV I7pF 1 5V SODBBZ I0402I
SP100501WTG 130KV 23pF 1 6V FIIpChip 10201)
SP1013701WTG 130KV 30pF 1 5v FIIpchIp 0.54m 29mm
SP102001WTG :SOKV ZOpF 1 5V 01005 FIIpcI’Hp
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% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
ztneltnenaanea l new Deiluled
APPLICATION SPECIFIC DEVICE SELECTION
RS485
Considerations:
There are numerous implementations and applicatlons of R8485
Most applications are multlpolnt and lnvolve two wlres lie A and BI
Depending on cabIe length, data rates can vary lrorn 100kbps» ZDMbps
Slgnaling IS assvmetrical going lront -7v to +12v
The SM7IZ shown below was designed specltlcally tor R3435 conslsling cl 2 channels with a 12v and N standetl voltage in the posltlve
and negative dlrectlon , respecllvely, to match the slgnal levels of the bus,
To provide only dilferemiaI protection between A and B,the GND connection can be removed irom the SM7IZ but is obviously sliIl
connected between the two end pOInlSt
Application Schematic:
R5485 Port Transceiver
2 i
SMTIZ
GND
Recommended TVS Diode Arrays:
SM712-02HTG :SOKV 17A 75pF 2 +12V/-7V SOT23-3
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% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
ExpenI'aEAppIIE-i I Amer; Dehuved
APPLICATION SPECIFIC DEVICE SELECTION
PIS-232
Considerations:
There are numerous impIemenlalions and applicatIons of RS-232
Many applioaiions use just 3 eres: transmIt dara ITxDI, receive data IRxDI and, ground; however, some instaIlalIons also include RTS
(Request «0 SendI and CTS (CIear re Send) to controI the data now This is the example shown beIowr
Depending on cabIe length, daia rares can vary from roughly a lew kbps up re 100kbps
signaling is delermIned bythe Iine driver beIng used but in mostcases12-15VIslhe maximum
The swna shown below wIIl standoff off up io 15v and can be used In a bIdIreclIonal manner to achieve a 15v standolf In both directions
R8232 Port Transce‘wer
RxD I
TXD .
HTS I
CTS IC
NC NC NC NC
GND
T SM15(X4I
Recommended TVS Diode Arrays:
SMI SOZHTG :SOKV I7A 75pF 2 I5V SOT233
SOD882
I0402I
SPHVI ZOI ETGC :SOKV 5A 46pF I I5V
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% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
Ewelil'aEAplezd l pram Bellman
APPLICATION SPECIFIC DEVICE SELECTION
CAN Bus
Considerations:
There are numerous implementations and applications ol a CAN bus
Most applications involve two wires lie, CANH and CANL)
Dependlng on cable length, data rates can varvfrom 10kbps-1Mbps
The common mode voltage can d‘lfler in the particular application horn -z\/ to 7v or up to -l2v to 12v, The latter case is shown below
were the SMZACANA can withstand up to 24v in either direction Ike, hidirectionall
verv application should be evaluated thoroughly before using the recommended devices below
For applications, that will not exceed 6V in either direction, the SPIDDZ—DZJTG can be considered,
Application Schematic:
CAN Bus Transceiver
CANH T
CANL IC
SM24CANA
GND
Recommended TVS Diode Arrays:
SMZACANA-OZHTG :ZAKV 3A 11oF 2 24V SOT23-3
SMZACANBOZHTG :SOKV 10A 30oF 2 24V SOT23-3
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% unalfuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
meruoehwhee I Amer, DeIweved
APPLICATION SPECIFIC DEVICE SELECTION
LIN Bus
Considerations:
There are numerous impIememalions and applIcatIons of a LIN bus ImpIemenlation
FIattopology— one master node and up to 16 sIave nodes
The data bus has only one conductor, and one oonheouon to ground
The Ienglh of the bus can be up to 40m; the data rate is lImIled to 191kbps
The common mode voIlage can driver in the particular appIicalionup to 18v, For IowervoIlage impIementatIons, the smsc should be
used; for hIgher voltage Installations, the sow: shouId be used
very applicatIon shouId be evaluated thoroughly before hnahzing the use of the recommended device below
Application Schematic:
LIN .
LIN Node
Controller SDxxC
Tanscelver := Lin Node
GNU C master/slave Connector
0
Recommended TVS Diode Arrays:
SDI ETC-01 FTG :SOKV 12A 75DF 1 15V SODSZS 10805I
SD24C—01FTG :SOKV 7A 50pF 1 24V SODSZS IOBOSI
©2016 Littelfuse, Inc v.1510»2
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% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS
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APPLICATION SPECIFIC DEVICE SELECTION
Touchscreen
Considerations:
There are many dilferem types of iouchscreens (ie, resistive, capacitive, optical, eth and each may require unique protection schemes
The protection scheme shown belowis ior atouchscreen interface that requires 4 channels of protection
Many device options exist but the ones shovvn beIow provide robust ESD protection in smali form lactor packages with a minimal package
height that provide design flexibility
Application Schematic:
Control
Display Interface Chipset
SP3022 Ix4)
IQC
IQC
IC
lac E
IEC
*Packages shown as
transparent
-l-
Recommended TVS Diode Arrays:
SP3022701ETG :ZZKV 0 35pF 1 5 3V SODBBZ I0402I
SP3022701WTG tZZKV 0'35pF 1 5.3V 0201 FIIpChIp
SP100501VVTG t3OI
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