Fiche technique pour ESD Protection Design Guide de Littelfuse Inc.

Electrostatic Discharge (ESD)
Protection Design Guide
ABOUT THIS GUIDE
Choosing the most appropriate suppressor technology requires a balance between equipment
protection needs and operating requirements, taking into account the anticipated threat level. In
addition to the electrical characteristics of suppression devices, the form factor/package style
must also be considered. This guide is designed to summarize some of the comprehensive ESD
solutions that Littelfuse offers, and help designers narrow to technologies appropriate to their
end application:
ESD
Electrostatic Discharge
(ESD) Protection
Design Guide
Table of Contents Page
Introduction 2
General Purpose ESD Protection 3-4
Ethernet and Lightning Surge Protection 5
Low Capacitance ESD Protection 6-7
Application Specific Device Selection
• USB1.1
• USB2.0
• USB3.0 (Two Device Solution)
• USB3.0 (Integrated Solution)
• USB3.1 (Type C Compliance)
• HDMl
• HDMI (Includes protection for Ethernet and 5V power)
• Display Port
• DVI (Digital Video Interface)
Ethernet, Intra-building Lightning Immunity (GR-1089) Non-PoE
• Ethernet, Inter-building Lightning Immunity (GR-1089)
• Ethernet, Tertiary Only Lightning Immunity (General)
• Ethernet (ESD only)
• 2.5 and 5.0 Gigabit Ethernet
xDSL, Intra-building Lightning Immunity (GR-1089) and ESD
T1/E1/J1 Carrier
• eSATA
• 1394a/b
• LVDS (Low Voltage Differential Signaling)
Audio (Speaker/Microphone)
Analog Video
• Keypad/Push Buttons
• SIM Socket
• RS-485
• RS-232
• CAN Bus
• LIN Bus
• Touchscreen
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Legal Disclaimers 36
Specifications descriptions and illustrative material in this literature are as accurate as known at the time of publication,
but are subject to changes without notice. Visit littelfuse.com for more information.
© 2016 Littelfuse, Inc.
% Littelfuse“ Ltuaylismnpliud l Amway: Delivered ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAVS Introduction Designers of today’s electronic devices have demanded more functionality with greater flexibility and higher levels of user interaction. These circumstances have helped in driving the development of nanometer sized chipsets for a multitude of user interfaces or ports. The confluence of these smaller sizes and a wider variety of application types has made electronic components more susceptible to ESD and thus require a more robust solution. ESD Standards: MILVSTD7883E, Method 3015.7 Historically, analog and digital designers have been required to have ESD protection "onrchip" to protect the IC during the manufacturing process. The most commonly used ESD standard in the manufacturing environment is the MIL»STD»883E, Method 3015.7. It is also referred to as the Human Body Model lHBM). This model discharges a 1DDpF capacitor through a 15000 resistor into the device under test (DUTl. The table below points out the fourtest levels as defined in the standard. HBM Contact Discharge Peak Currant Laval (kV) (A) 1 20.5 0.33 2 :1 0.67 3 :2 1.33 4 :4 2.67 The maximum level required for a typical IC had been 22kV up until 2007, but today that level has been drastically reduced to :0.5kV. Obviously, this has helped chip designers save valuable silicon area for more functionality, but in turn, it has made the IC much more susceptible to damage from ESD. lECelooorarz Conversely, equipment manufacturers have traditionally used an ESD standard defined bythe IEC (International Electrotechnical Commissionl for system or application level testing. This model uses a 150pF capacitor which is discharged through a 3300 resistor, The table below displays the four test levels for contact discharge as defined in this standard. IEC Contact Discharge Peak Current Level (kV) (A) 1 :2 7.5 2 :4 15 3 :6 22.5 4 :8 30 ©2016 Littelfuse, Inc Most all manufacturers require that their equipment pass Level 4, or xskv, as a minimum, however, some are looking for increased reliability and require that their devices pass a much higher level like :15kV or :30kV. Conclusions: The system level ESDtest defined by the IEC produces a substantial increase in peak current compared to the military standard. lfan IC is rated for 0.5kV perthe MIL- STD and the equipment manufacturertests this same IC at 8W per the IEC specification, the chip will see nearly a 100 fold increase in the initial peak current li.e. 0.33A vs. 30AM Ultimately, hardware or board designers must add supplementary ESD devices to protect these sensitive chipsets from the high level ESD threats seen in the field. Solutions: Littelfuse TVS Diode Arrays (SPA Diodesl are an ideal choice for suppressing ESD as their switching speed and superior clamping levels are essential to protect today's integrated circuits, surpassing the capabilities of MLV, MOV, and polymer technologies. The TVS Diode Array portfolio offers a wide range of components to suit the majority of application needs available in the market today, and this guide will steer the designer toward the appropriate ESD component for the particular application they aretrying to protect. Some of the applications discussed in this guide are: USB1.1/2.0/3.D/3,1 HDMI DVI Ethernet (10/100/1000 Mbpsl 2.5 and 5 Gigabit Ethernet XDSL ESATA 1394a/b LVDS Audio ISpeaker/Microphone) Analog Video SIM Sockets Keypad/Push button CAN bus and LIN bus Touchscreen Many of these applications can be found in electronic devrces such as: Laptops/Ultrabooks Portable Medical Devices Set Top Boxes MP3/PMP PDA's Digital Cameras LCD TV's Smart Phones Portable Navigation Devices External Storage Keyboards/Mouse Switch/Router/Hub Gaming Consoles v.1510»2
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A . A % ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS marmmppnm \ Wm WM PRODUCT SELECTION GUIDE General Purpose ESD Protection Unidirectional ESD Protection ESD Level I/O Number of Orderable Pan Series (Contact) Capacitance ‘ VRWM Channels Package Number 2 SOT23r3 SPOBOZBAHTG SC703 SP05OZBAJTG 3 SOT143 SP0503BAHTG SOT235 SP0504BAHTG SP05 :30kV 30pF 5.5V N/A 4 3C705 SPDSOABAJTG 5 301.2376 SPDSOSBAH TG SC706 SP0505BAJTG 6 M50118 SP05OGBAATG 2 SC703 SP1001>02JTG SOT553 SP1DD1VDZXTG 3C705 SP1DD1VD4JTG SP1001 :15kV 8pF 5.5V 2A 4 SOT553 SP1001>04XTG SC706 SP1001>05JTG 5 SOT563 SP1001>05XTG SOT963 SP1001>05VTG SP1DD3 :3DkV 30pF 5V 7A 1 8013723 SP1DD3VD1DTG 501388210402) SP1003>01ETG SP1006 :30kV 15pF 6V 5A 1 uDFNQ 10201) SP1006>01UTG SP1011 :15kV 7pF 6V 2A 4 uDFN>6 SP1011>04UTG 350pF 5V 30A SDDSVD'I FTG 150pF 12V 17A SD12’D1FTG SDXX :3DkV 100pF 15V 12A 1 SOD32310805) SD15’D1FTG 65pF 24V 7A 5132401 FTG 50DF 36V 5A SD36>01FTG 400pF 5V 24A SMDSVDZHTG 150pF 12V 17A SM'IZVDZHTG SMxx =30kV 100pF 15V 12A 2 SOT2373 SM15702HTG 65pF 24V 7A SMZALUZHTG 50DF 36V 5A SM36>02HTG SM712 ¢3okv 75pF +12V/»7V 17A 2 SOT233 SM712»02HTG ©2016 Littelfuse, Inc v.1510»2
A . A % ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS Ewarlmilpplwd 1 Wm WM General Purpose ESD Protection (cont) Bidirectional ESD Protection ESD Level I/O Number of Orderable Part Serles (Comact) Capac Channels Package Number 1 sc7073 SP1002701JTG 5m” ‘8'“ SPF W M 2 50705 SP1002»02JTG SP1004 :SkV 5pF 6V 2A 4 SOT953 SP1004»04VTG Flipchip (02011 SP1005»01WTG SP1005 :30kv 23pF 6V 10A 1 SOD88210402) 3191005701 ETG Flipchip (02011 SP1007»01WTG SP1 007 28W SPF W M 1 SOD88210402) 3191007701 ETG SP1008 :15kv spF 6V 3A 1 Flipchip (02011 SP1008»01WTG Flipchip > SP1012 :15kv 6.5pF 5v 3A 5 0.94x0.61mm SP1012 05WTG Flipchip > SP1013 :30kv 30pF 5v 8A 1 0.54x0.29mm SP1013 01WTG Flipchip SP1014 :12kV SpF 5v 2A 1 0_54X0_29mm SP1014701WTG Flipchip , SP1015 :ZDkV 5pF 5v 2A 4 0,93x053mm SP1015 DAWTG SP1020 :30kv 20p1= 6V 5A 1 Flipchip 01005 SP1020»01WTG SP1021 :12kV 6pF 6V 2A 1 Flipchip 01005 SP1021»01WTG 200p1= 5v 30A SD05C»01FTG 100pF 12v 17A smzomFTG SDxxc :30kv 75pF 15v 12A 1 SOD32310805) SD15001FTG 50pF 24v 7A SD24C701FTG 30pF 36V 5A SD36C»01FTG :BDkV 30pF 12v 8A SPHV12701ETG SPHVxx» :30kv 24pF 15v 5A SPHV15»01ETG 1 D 2 4 2 01ETG :24kV 17pF 24v 3A 50 88 10 0 ) SPHV24701ETG :15kv 13pF 36V 2A SPHV36»01ETG :30kv 60pF 12v 8A SPHV12»01ETG»C SPHVXXV :30kv 46pF 15v 5A SPHV15»01ETG»C 1 D 2 4 2 01ETG»C :24kV 32pF 24v 3A 50 88 10 0 ) SPHV24701ETGVC :15kv 25p1= 36V 2A SPHV36»01ETG»C :BDkV SOpF 12v 8A SPHV12701KTGVC SPHVxxr :3DkV 46pF 15V 5A 1 301333210402) SPHV15»01KTG»C 01 KTG»C :24kV 32pF 24V 3A exposed leads SPHV24701KTGVC :15kv 25p1= 36V 2A SPHV36»01KTG»C SP :BDkV 26pF 12v 8A SP12701WTGVCVHV XX’ +30kv 21p1= 15v 5A SP15»01WTG»C»HV 1WT » » ' 1 Fl' 11‘ 2 1 21v GC :18kV 13pF 24v 3A 'pc we 0 ’ SP24701WTGC7HV :10kv 10pF 36V 1.5A SP36»01WTG»C»HV SMZACANA :24kV 11pF 24v 3A 2 SOT2373 SMZACANAVDZHTG SMZACANE :30kv 30pF 24v 10A 2 SOT23»3 SM2ACANB02HTG ©2016 Littelfuse,|nc v.1510»2
A . A % ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS Ewamxskpphvd \ Wm WM Ethernet and Lightning Surge Protection ESD Level I/O m Number of Ordereb‘e Part Series (Contact) Capac nce VRWM (tp- /20u D C nnels Package Number spin/054 :ZOkV 1.2pF 6V 10A 4 SOT23»6 SRVDS-AHTG SP2504N :3okv 2.0pF 2.5V 20A 4 uDFN»10 SP2504NUTG SP3304N :3okv 2.0pF 3.3V 20A 4 uDFN»10 SP3304NUTG SP4044 :3okv 1.5pF 2.8V 24A 4 msomo SP4044»04ATG SP4045 :BDkV 1.5pF 33v 24A 4 MSOPJO SP4045704ATG SP4060 :3okv 2.2pF 2.5V 20A 8 MSOPJO SP4060»08ATG SP4065 :3okv 2.2pF 3.3V 20A 8 MSOPJO SP4065»08ATG SP3051 :3okv 2.0pF 6V 20A 4 SOT23»6 SP3051»04HTG SP3312T :3okv 1.3pF 3.3V 15A 4 uDFN»8 SP3312TUTG snos :BDkV 3.0pF 5v 25A 2 SOT143 srzosrozcm 3P402o :BDkV 2.5pF 3,3v 30A 1 WT"? SOD323 SPAOZD’MFTG 1 mm) “”309 SP4020»01FTG»C Huni) 300323 SP4021»01FTG SP4021 :3okv 2.5pF 5v 25A 1 thidir) ‘08ch SP4021701FTGVC SW flow W W M MEL?” $3233? SEZSEZEJESC SRDA05 :30kV 4.0pF 5v 30A 4 SOIC»8 SRDAOSABTG SRDA3.3 :BDkV 4.0pF 33v 35A 4 selcrs SRDA3.34BTG sn7o :BDkV 2.0pF 70v 40A 2 SOT143 smorozcm 8Lvu284 :BDkV 2.0pF 23v 40A 4 selcrs SLVUZBABTG SLVU2.8»8 :3okv 2.6pF 2.8V 30A 8 SOIC»8 SLVU2.8»SBTG SP2502L :3okv 2.5pF 3.3V 75A 2 saw SP2502LBTG SP2574N :BDkV 3.8pF 25v 40A 4 uDFNr10 SP2574NUTG spearaa :BDkV spF 33v 150A 2 selcrs spearaaam LC03»3.3 :3okv 4.5pF 3.3V 150A 2 SOIC»8 LC03»3.3ETG SP03»6 :3okv 8pF 6V 150A 2 SOIC»8 SP03»6BTG ©2016 Littelfuse,|nc v.1510»2
A . A % ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS mummppnm \ Wm WM Low Capacitance ESD Protection Series 5:031:21? ggpacitance VRWM :‘t Zonugs) 21:31:35“ Package figfirbaekfle Part SP1255P :12kv 0.5pF 4v 4A 3 uDFN»6 SP1255PUTG spasm =8kV 0,65pF 5v 2.5A 4 swore spsomrozuTG spaooz :12kV DBSpF 5v 4.5A 4 SC70»6 SP3002-04JTG uDFN»6 SP3002-04UTG sposoas :12kv 0.85pF 6V 4.5A 4 sonw SPOBOASHTG sc70»5 SP3003—02JTG 2 SOT553 spsoosrozxm pDFNrs spsoosrozum SP3003 :skv 0.65pF 6V 2.5A SC70»6 SP3003—04JTG 4 SOT563 SP3003—04XTG MSOP»10 SP3003—04ATG s MSOPV10 spsooerSATG spasm: :12kV DBSpF 5v 4A 4 SOT563 3P3004o4>
A . A % ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAVS manumppnm 1 Wm WM Low Capacitance ESD Protection (cont) $43.13;? ggpacitance V ’ ‘ 2152:2215 Package nglfirbaebr‘e Part 3535313131wa :szv 0.30 pF 7v 1 0201 DFN RF39177000 35133392201311. 122W 015 pF 7V 2.5A 1 0201 DFN RF3918-000 35:53:32“ UN» :22kv 030 pF 7v 2.5A 1 30,3502 RF3920—000 351833322“ BN» :22kv 015 pF 7v 2.5A 1 30,3502 RF3922—000 Sggggggmwe’ :22kV 030 pF 7v 2.2A 2 fggéggg RF3925—000 Sggggggwwe’ :22kV 030 pF 7v 2.2A 4 1004 DFN RF3923—000 3555338202067 :ZDkV 0,20pF 7v 2.0A 2 f’g’géggg RF294GDOO ggzsggggzowe :20kv 0.20pF 7v 2.0A 4 0802 DFN RF3076—000 ggzsgggmwe :ZDkV 0,20pF 7v 2.0A 4 1004 DFN RF3077VDOO ngggggaoeue» :ZDkV 0,20pF 7v 2.0A 5 1103 DFN RF307EDOO ggzsggggmww :20kv 0.20pF 7v 2.0A 1 0201 DFN RF2102—000 351353301311. :ZDkV 0,10pF 7v 2.0A 1 0201 DFN RF2193DOO $553382“ UN’ :20kv 0.20pF 7v 2.0A 1 €33ng 102943000 $15533?“ BN’ :20kv 0.10m: 7v 2.0A 1 $33382 RF2945-000 ©2016 Littelfuse, Inc v.1510»2
A . l % ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS minisenppliea I New Dullvelrd APPLICATION SPECIFIC DEVICE SELECTION USB1.1 Considerations: Each pon cperaies at either 1,5Mbps or 12Mbps llow and lull speed respeciivelv) Parasilic capacitance should be taken into account alihcugh these reIallver slcvv speeds can loIerale lens of p'lcofarads Requires 2 channels oldala line prcieciipn per port lie DxI A 4 channel device can be uselul 'lf protecting a USE stack of 2 pans to make me ESD foolpnni as small as possible Vslls can be protected separately wiih a single channel devlce in an 0402 or 0201 form lacicr (0402 shcwnl Protection for Vaus is oplipnal and can be done via a single channel device or included with the protection lei D2 in a single 3 channel device such as (he SPDSDS Application Schematic: USB Port USB Controller PTC:1206L1108LVR Vaus D+ D, SPOEOZ SP'IOD3 GND _ Recommended TVS Diode Arrays: SPOSOZBAJTG t30kV 50pE 2 5 5V SC7073 SPOSOSEAHTG t30kV 50pE 3 5 5V SOT143 SP1 OOIrOZXTG :I 5kV IZpF 2 5 5V SOT553 SP1 00301 ETG :SOKV SOpF l 5 0V SODBBZ I0402I ©2016 Littelfuse, Inc v.1510»2
A . A % ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS eyarteamtiea l New Meta APPLICATION SPECIFIC DEVICE SELECTION USBZ.0 Considerations: Each port can operate up to 480Mbps The high data rate requires a low capacitance device to preserve signal integrity Requires 2 channels oidala line protection per pcn (Le, Dzl which can be done via array or discretely A 4 channel device can be useiul if protecting a use stack on ports to make the ESD rcotphm as small as possible Protection for Veus is optional and can be done via a single channel device like the SP1003 Application Schematic: use For! PTC21206L11DSLVR use Controller Veus D+ D» SP'IOD3 SP3003/ SP3014 7 GND *Packages shown as transparent USB Port PTC21206L11OSLYR USB Controller Veus D+ D» T '-' SP‘l 003 SP3030 IX2) GND Recommended TVS Diode Arrais: uDFNB SPSOOEOZUTG t8I
A . A % ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS Ewarilxeitppllvd l Anzweu MM APPLICATION SPECIFIC DEVICE SELECTION USB3.0 (Two Device Solution) Considerations: Each pon depending upon what it's connected to can operate: Up to sepps over the new super-speed data pairs, SSTXX and ssex: Up to 480Mbps on the legacy data pair, D2 Requires Achennels oiultra-lowcapacitance protection farthesuper-speed data pair (Le ssrx: and SSRXtI Requires 2 channels of protection for the legacy D: data pair Protection for Veus is omional and can be done via a single channel device like the SP1003 Application Schematic: USB Port USB Controller PTC:1206L15DSLVR Veus I:I D+ D, SF3003/SP30I 4 7 SP1 003 T IC SSTX+ SSTX» GND -|| SP0524P SSRX+ SSHXV *Packages shown as transparent J1.- Recommended TVS Diode Arrays: pDFN6 930030sz t8I
A . A % ”Item‘se ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS orarlisenppliee l News DuIlvelrd APPLICATION SPECIFIC DEVICE SELECTION USB3.0 (Integrated Solution) Considerations: Eacn port depending upon what it's connected to can operate: Up to 5Gbps over the new super-speed data pairs, SSTX: and SSRXs Up to 480Mbps on the Iegacy data palr, D2 Requires 4 channeIs ol ultra-low capacitance protection for tne super-speed data pair tie, ssrx; and SSRXtI and 2 channels ot protection lor the legacy D2 data pain Tne SP3012 shown beIow integrates all 6 channels ol protection into a smalI form factor pom-14 package Protection for Vaus is optional and can be done via a single channel device like the SP1003 Application Schematic USB Port pm 1205L1505LYR USB Controller Vaus SP1003 SSTX+ SSTXV ,C ssax+ SSRX» GND .l SP30l2 D+ *Packages shown as transparent T Recommended TVS Diode Arrays: pDFNrI 4 SPBOIZOGUTG :IZKV 0 SPF 6 5V ‘3 5x1 35mmI SP1 00301 ETG :SOKV SOpF I 5V SODBBZ I0402I ©2016 Littelfuse, Inc v.1510»2 11
% LlflelquE ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS mannmum I AmweuDeIIveIEd RF3077VODO E SP‘IOOS orSP1006 E SBU2 __—E—_ —E’ RF30777000
APPLICATION SPECIFIC DEVICE SELECTION
USB3.1 (Type C Compliance)
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SuperSpeed+ lines operate up to 10 Gbps, so lowest unidirectional capacitance is required.
Configuration control is logic line, helps determine polarity of the connection, and voltage transfer level.
SBUx is used to support DisplayPort communication across the SuperSpeed+ lines
USB 2.0 is a bidirectional interface under Type C protocol, different than historical USB 2.0
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% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS wemmwnea 1 mm new”: APPLICATION SPECIFIC DEVICE SELECTION HDMI Considerations: Each port has 3 dficmnnal paws of data (1 e D01,D1:,D2:] pIuS a dock (CLKi) ForHDMI 1 1,1 ZIhcmaXImumthroughpul IsamtaI oMSSGbps (1 SSGbps pcrlanc) For HDMI1371AthemaxImumthroughpulIs a1ma1 of 10 ZGbps (3 AGbps per Ianc) For HDMI 2 Da Ihc maxlmum \hroughpui IS a \otaI of 18 ths (6 Oths pm Iane) To maintam me wiiorcnIIaI Impedance par “10 HDMI CompIIancC Test Specmcanon (and consequently sIgnaI InlcgrltvI a very Iow capacmance dcwcc mus1 be used To maintam me dwrmnuaI Impedance me dosIgncr shouId avold usmg so” angIcs and was Thls can be accom pushed by me use of an ESD dcwcc that offers a "slraIg hmveugh" Voutmg scheme chwvos IZchanncIs of prctccllon 5 TMDS data paws. SDA, SCL, CEC, and HPD and me smmzoe (sz couId ae censmcrcd as wclI Application Schematic: HDMI Port Chipset ‘Packages shown as transparent D2+ GND -. .- DZ' SP0524P D1+ RF3077000 GND 4 ._ D1» D0+ GND —. ._ D07 SPDSZAP “3 CLK+ RF30777000 GND -0 .- CLK» SDA SCL SP0524P RF30777000 CEC HPD T GND ‘7' GND = Recommended TVS Diode Arrays: SP0524PUTG :IZKV 0 SIDE 4 5V pDFNrIO (2 5x1 0mm) RF30777000 :IZKV 0 2pF 4 6V pDFNrIO I2 5x1 0mmI SP3012706UTG 1I2I
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS Anglia-1 I New New: APPLICATION SPECIFIC DEVICE SELECTION HDMI (Includes protection for Ethernet and 5V power) Considerations: Same as noted on previous page except the protection scheme ooiow includes options for piotocting addillonal Ethernet and 5v power pins Other combinations cxlst Such as Using 3X SPOSZAF and IX 5F3003702UTG (for EtIVDmDII and "may Combinanons using discrctcs Application Schematic: HDMI Port ‘Package IS shown as transparent Chipset D2+ GND [’2’ SP0524P/ 01+ RF30777000 DO~ SP0524P/ RF30777000 SPSO’I 206 CEC PWR HEC+ HEC» Recommended TVS Diode Arrai ‘ pDFNJO SPOSZAPUTG tiZkV o 5pF 4 5v {2 5X1 0mm pDFNri 0 RF30777000 tiZkV o ZpF 4 6V {2 5X1 0mm pDFNi 4 I3 5x1 35mmI SP303001ETG :ZOKV 0 SpF i 5V SODBBZ I0402I (5)2016 Llllelfuse, Inc v.151072 14 SP3012706UTG tiZkV 0 SpF 6 5V
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS ExpelilseApleed I new» Deiluled APPLICATION SPECIFIC DEVICE SELECTION Display Port Considerations: Each part has a main link which contains 4 diiferemial pairs or lanes (Lea MLDt, MLix, MLZt, and MLStI Thetolal throughput is 32,443hps or8,iGbps per lane The cIock signal is embedded in the lanes and does not existseparalely asin HDMI There IS also an auxlliary channel (AUXtI, hm pIug detect (HPDI, and power pin IFWRI as well, To malnlain lne dliieremiaI impedance Iand consequenlly slgnaI lnlegrllvi a very low capacnance device must he used To malnlain the diiferemiaI impedance me designer should avcld uslng 900 angles and vies This can be acccrnpllshed by the use of an ESD devlce lhal clrers a ”straight-through” routing scheme Requires 12 channels of prcleclion per pcn IMLDx, MLls, MLZt, MLSt, AUXx, HPD, and PWR) and 2, swan-owns would be another Option Application Schematic: DisplayPon Chipset *Package is shown as transparent MLO+ GND -0 MW SPOSZAP/ ML1+ RF3077<000 gnd="" -0="" mh-="" ml2+="" gnd="" -0="" mlz'="" sp0524p/="" ml3+="" rf30777000="" gnd="" -0="" ml3—="" auxa="" gnd="" -0="" au)“="" sp0524p/="" rf30777000="" hpd="" pwr="" t="" gnd="" recommended="" tvs="" diode="" arrays:="" sp0524putg="" tizkv="" 0="" spf="" 4="" 5v="" pdfnrio="" (2="" 5x1="" 0mm)="" rf30777000="" tizkv="" 0="" zdf="" 4="" 6v="" pdfnrio="" (2="" 5x1="" 0mm)="" rf3920000="" 122kv="" 0.3pf="" i="" 6\/="" sodbsz="" i0402i="" spsoizogutg="" tizkv="" 0="" spf="" 6="" 5v="" pdfni4="" (3="" 5x1="" 35mmi="" ©2016="" littelfuse,="" inc="" v.1510»2="" 15="">
A - w % l-luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAVS :ierrinenpanee I Am» penned APPLICATION SPECIFIC DEVICE SELECTION DVI IDi ital Video Interface) Considerations: A DVI pen may have single or dual Iink capability Each link has a differential Ianes oi daia Ii e DOt, D12, 02:) plus a clock ICLKtI For single Ilnk, the maxlmum inroughpui can approach a ieial oi4i955bps or IiBSGbps per lane Fordual link, rhe maximum throughput can approach a rural of BGbps or zievebps per lane To mainiain signal Integrity a very Iow capacitance device must he used To maintain the dilreremial impedance the designer should avoid using 90° angles and yias This can be accomplished by the use of an ESD device inai oliers a “straight-through” routing scheme Requires 8 channels cl prorecrion per pen was, D12, 02;, CLKtl and rhe Vcc should not be connected if backdr‘lve is a concern Application Schematic: *Packages shown as transparent DVI For! DVI Chipset D2+ G N D D27 SP3003
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS Expenl'aEApplle-i i Amos petunia APPLICATION SPECIFIC DEVICE SELECTION Ethernet, Intra-building Lightning Immunity (GR-1089) Nan-POE Considerations: 10/100/1000 relates to the data rate In Mbps iiie, 10Mbps, iouMbps, and ioooMbpsl For 10 Base-T, data is transmitted over 2 UTP (unshielded twisted pairsI using a lfllVIHz clock For 100 Base-TX, data is transmitted over 2 UTP using a 125MHz clock For 1000 Base-T data is transmitted over 4 UTP using a 125MHz cIock For these data rates the parasitic capacitance needs to be taken into account to preserve signal integrity (Ire, rate and react. capabilitiesl The 4 data lines below ITxx and thi are being protected against intra-buiIding lie, 100A, ttt2/10l1si lightning transients by a twostage protection scheme tuqubps Ethernet (or thEl will require 8 channels oi protection for the 4 differential pair so the below scheme should be replicated for the remaining 2data pair Application Schematic: RJ-45 *Packages shown as transparent Connector F1 Ethernet PHV J— ’V ‘ ‘ O Tx+ . TX» . Rx+ F2 N ‘\a F3 §OOOOOO$YE ‘\a F4 LC03 Ix2) F1:F4 = 0461 125 TeleLink Fuse PHY ND G = SP305i Recommended TVS Diode Arra s: LC0373 3BTG t30kV WSOA 4 SIDE 2 3 3V SOICVS SP3051r04HTG :30kV 20A 2 OpF 4 6V $07236 SHVOSAHTG :20kV WOA i 2pF 4 6V SOT236 norm 0 SP2504NUTG :30kV 20A 2 OpF 4 2 5V {2 6X2 6mmI norm 0 SP2574NUTG :30kV 40A 5 OpF 4 2 5V {3 0x2 0mm’ norm 0 SP3304NUTG :30kV 20A 2 OpF 4 3 3V {2 6X2 6mmI SP404404ATG :30kV 24A i SpF 4 2 8V MSOPriO SP404504ATG :30kV 24A i SpF 4 3 3V MSOPriO ©2016 Littelfuse, Inc v.1510»2 17
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS meriiserppiiaa l mm Datum APPLICATION SPECIFIC DEVICE SELECTION Ethernet, Inter-building Lightning Immunity (GR-1089) Considerations: iO/IODHDOO relates to the data rate in Mbps (i e loMbps, iDDMbps, and 1000Mbpsl For 10 Base? data is transmitted over 2 UTP (unshielded tWisted pairsl using a tom Hz cIock For 100 BaschX, data is transmitted over 2 UTP using a 125MHz clock For 1000 Basel data is transmitted ovcr4 UTP using a 125MHz clock For these data rates the parasitic capacitance needs to be taken into account to preserve signal integrity ti e rate and reach capabilities) The A data lines below are being protected against IntolrbulIdlng (r e worse casesouA, t»:2l10psl lightning transients by a tworstage protection scheme The A channel. 5F2504N or SP330AN should be selected based on the operating voltage of the PHV and if discrete devices are preferred the SP4020 and SPAOZ1 Series are ideal The standoff voltage ofthe SEP Series dOVICG Will be dictated by the use of PoE If POE is present the SEP0640 should be used: otherwise, the SEPDDED is ok for noanoE applications (Note. nghsl voltage options are oval/able for atyplcal POE voltages )AIso, FOE applications WIII require lntcrpowcrlng pair protection since surges are applied between the center taps (Mode A and Mode E power connections are surged) 1000Mbps Ethernet (or iGbE) Will require 8 channels of protection for the 4 differential pair so the below scheme should be rclecach for the remaining 2 data pair Application Schematic: RJ745 SEP064 2 ‘Packages shown as transparent Connector FI * Ethernet PHV I 1 J— Tx+ 0 F2 E Tx’ : SP3304N "‘il' . PHY GND F3 . Rx+ ‘8 I I l RX» F4 J— F’I:F4:0461 1.25 Telellnk Fuse T Recommended TVS Diode Arra s: SP2504NUTG pDFNJO (2 6x2 6mm) SP2574NUTG pDFNJO (3 0x2 0mm) SP3304NUTG uDFIW 0 (2.6x2.6mm) SP4044~04ATG MSOPJ 0 SP404504ATG MSOPJ 0 SPAOZCLOW FTG SOD323 I0805I SP4021701 FTG SOD323 I0805I (5)2016 thtelfuse, Iflc v.151072 18
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS Ewerti'oEApprd I mm Datum APPLICATION SPECIFIC DEVICE SELECTION Ethernet, Tertiary Only Lightning Immunity (General) Considerations: 10/100/1000 relates to the data rate in Mbps tiret ioMbps, 100Mbps, and lOOOMbpsI For 10 Base-T, data is transmitted over 2 UTP (unshielded twisted pairsi using a lfllVIHz clock For 100 Base-TX, data is transmitted over 2 UTP using a 125MHz clock For 1000 Base-T data is transmitted over 4 UTP using a 125MHz cIock For these data rates the parasitic capacitance needs to be taken into account to preserve signal integrity the, rate and reach capabilities) Some designers choose to use a robust translorrner in their design to act as the tirst line of protection against an incoming surge event This is usuaiiv done to minimize the parasitic capacitance on the data line and to save on the cost of thesecondary protector (ire, Iine sidei Using such a technique wilI require a robust PHV side protection device and one such option is the SLVU2,8-4 shown beIowr It should be noted that this device wiIl onIy provide diflerentiaI protection between the data pairs, If longitudinal and differential protection are required, the SP3051 or SP4060/SP2504N/SP3304N can be considered as aIternatives for an array format, For discrete implementations, the SP4020 and SP4021 Series are idealv Protection tor ID HODMbps is shown below For 1000Mbps (or iGbEI interfaces, two SLVU2,8-4BTG devices are required Application Schematic: RJ-45 Connector Ethernet PHV Tx+ TX» Hx+ Rx» SLVUZBrd *Package is shown as transparent LOOOOOOOOL w Recommended TVS Diode Arrays: SLVUZ.B~48TG SOICVB SLVUZ BBETG SOIC8 SP406008ATG MSOPB SP406508ATG MSOPB SP2504NUTG pDFNiO (2 6x2 6mm) SP2574NUTG uDFNiO (3 0x2 0mm) SP3304NUTG uDFNi 0 I2 6x2 6mmi SPAOAAVOAATG MSOPri O SP404504ATG MSOPri 0 SPAOZOOi FTG SOD323 I0805I SP402170iFTG SOD323 I0805I ©2016 Littelfuse, Inc v.1510»2 19
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS Expem'aEAppIIEd I Answers bellman APPLICATION SPECIFIC DEVICE SELECTION Ethernet (ESD only) Considerations: Some Ethernet ports only need to be protected for ESD and not lcr lightning induced transients These are sometimes relerred to as ”2M" ports or 2 Meter ports that have very short CAT5 cable installations Parasitic capacitance should be taken into account especially tor 1GbE The 4 data lines below in: and thI are being protected against ESD by a low capacitance sposoas which is suitable for all Ethernet data rams Additionally, any Iow capacitance SPEDxx device is suitable lor any ”ESD onIv” Ethernet application luqubcs Ethernet lcr leEl will require 8 channels oi protection for the 4 differentlaI pair so the below schenie can be replicated or the 8 channel SPSOUS-DBATG can be used, Application Schematic: RJ-45 Connector Ethernet PHV ‘1 _l— . Tx+ O . . TX» 0 O . Hx+ O 0 .JB RX» PHVGND — SPOSOAS Recommended TVS Diode Arrays: SP0504SHTG 1I2I
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS etperineaaalied l Answers oeiiniea APPLICATION SPECIFIC DEVICE SELECTION 2.5 and 5.0 Gigabit Ethernet 2‘5 and so GbE is an evolutionary step above 1 GbE speeds, using the same installed inlrastructure to achieve signiliaantly more data throughput at aflordable price points Using existing cabling, and existing PCB technology, solutions providers are able to ofler laster data rates, at modest premiums to their standard 1GbE olferingsr It provides an intermediary step between legacy and 10 one offerings Considerations: Increased speeds necessitate ”straight lhru” routing, minimizing the negative elfects pl stubs, and the corresponding ailect on signal Integrity Tertiary protection, or PHV side protection placed alter the magnetic, the protection closest to the PHV To reduce Electro Magnetic lnterlerence (EMII, some designs employ Ethernet pairs routed on the top and bottom side olthe PCB MSOP-lfl permits "straight thru” routing and doesn’t not require ”Fan In" or "Fall Out” on PCB, enhancing signal integrity Low capacitance permits high data rates, does not degrade signal integrity, Application Schematic: *Packages shown as transparent Ell Ell Elli Ell? Ethernet PHV TPO+ TFO— TP1+ TF1- TP2+ TF2- MSOPV10 TP3+ TF3- SP404X IXZ) SP404¢04ATG :SOKV 24A I SpF 4 2 8V MSOPVIO SP404504ATG :SOKV 24A I SpF 4 3 3V MSOPVIO ©2016 Littelfuse, Inc v.1510»2 21
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS ttpeiinenppiini I Am» Denim APPLICATION SPECIFIC DEVICE SELECTION xDSL, lntra-building Lightning Immunity (GR-1089) and ESD Considerations: There are many options for xDSL today inquding ADSLx and VDSLx aII with varying data rates In generaI ADSLx runs between 8-24Mbps and VDSLX provides swamps and at these data rates capacitance of the suppressor needs to be considered AII impIementations are done over Iegacy POTS wirlng (TIP and RINGI and the saw is shown below capabIe oi protecting against intra- buiIding (ire, 100A, th/lflpsi Iightning transients when situated behind the transiormer differential protection is needed, then the SIDACtor SDPXXXXTDZSGS /SDPxxxxTUZ$GB series can be considered A Iine side protection device is optionaI and its seIection will depend on the transient and whether or not the appIication invoIves a wet or dry Ioop Application Schematic: FiJr11 Connector xDSL PHV . . TIP . RING VREF ill— GND SH70 Recommended TVS Diode Arrays: SR7002CTG :SOKV 40A 2 GDP 2 70V SOT143 SOD323 SP4022701FTG :SOKV 15A 2 OpF 1 12V I0805I SOD323 SP4023701FTG :SOKV 12A 2 OpF 1 15V I0805I SOD323 SP402¢01FTG :SOKV 7A 2 OpF 1 24V I0805I ©2016 Littelfuse, Inc v.1510»2 22
If PHY side
% Liltelluse“ ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS ExpErtiSEApplw-i l Arum new”: APPLICATION SPECIFIC DEVICE SELECTION T1/E1/J1 Carrier Isolation Requirements: If the LC03 device IS used on the line side olthe coupling transformer, men ground rererence pins 2, 3, 6, and 7 should not be connected to ground Power Fault Requirements: The TeleLrnk fuses F17F4 provide overcurrent protection that complies With the GRri089, lTU K20/21, ULGOQSW llEC60950i / ENGOBSW and VD/T 950 power fault requirements Lightning Immunity Requirements: The 4 data lines below are protected against intrebuilding lightning transients (i 00A, tp:Z/i Ops for up to 2 pairl. The L003 diverts the maiorrtv oi energy away from the transformer, but any common mode energy that does get coupled across the transformer rnterwrndrng capacrtanoe Will be diverted to GND by the SP3051 The SP305i can be connected to ground on the PHV side of the transformer to protect against common mode transrents Alternatively, the SHDAOS or SHDAS 3 could be used In place of the SP305i if a more robust devrce rs needed These would be the best alternatives in protection on the line srde IS not used Application Schematic: F1 *Package is shown as transparent Transceiver .- 0 Rn? . Rene Trrr= I I . ans F4 LC03 IXZ) F1:F4 = 0461 1.25 TeleLink Fuse GND :- SP305‘I Recommended TVS Diode Arrays: I LCOC’rSGBTG 130kV iBOA 4,5pF 2 3.3V SOIOB SPOC’prTG :BOKV i50A EVODF 2 3V3V,6V SOIOB SP3051704HTG :SOKV 20A 2 OpF 4 6V SOTZC’rG SRDAOMETG :SOKV 30A 4 OPE 4 5V SOIC8 SRDA3 METG :SOKV 35A 4 OpE 4 3 3V SOICS SP4044¢04ATG 130kV 24A prF 4 2.5V MSOPVI O SP404504ATG 130kV 24A prF 4 3.3V MSOPVI 0 ©2016 Littelfuse, Inc v.1510»2 23
% Littelluse“ ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS Expuh'aEApplw-i I Am» new”: APPLICATION SPECIFIC DEVICE SELECTION eSATA Considerations: eSATA is a subset of the SATA protocol that uses 2 dlflerential pairs for communication Four lines need to be protected per pon (Le TX: and Rle Currently eSATA ls capable of running raw data rates of LEGbps (Gen 1) and SIOGDDS (Gen 2), as well as SATA-IO at 6,0 Gbps These high bus speeds require very low capacitance devices m prevent signal degradation, and m ma‘rmain the line rmpedance the designer should avoid usrng 900 angles and vlas A single 4 channel device such as the SPDEZAP can be used or alternatively A discrete SP3030's could be used Application Schematic: eSATA Port GND .. eSATA Interface TX+ . *Package Is shown as transparent TXV IC GND RX- RX+ SPDSZAP/ RE30777000 GND 4 = GND Recommended TVS Diode Arrays: SP0524PUTG :1 2kV 0 SIDE 4 5V pDFNaI 0 (2 5x1 0mm) RF30777000 :1 2kV 0 2pF 4 6V pDFNaI 0 (2 5x1 0mm) RFSQZGOOO :ZZKV 0 SIDE 1 6V SODBSZ I0402I SP303001ETG tZOKV 0 SIDE 1 5V SODBSZ I0402) ©2016 Littelfuse, Inc v.1510»2 24
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS Ewuh'aEApplizd I Amen Denim APPLICATION SPECIFIC DEVICE SELECTION 1394alb Considerations: 1394a IFireWire 400 or 5400) was the original (1H generaiioni implementation AlIowed idr two connectors, powered is pini and unpowered (4 pin) Data rates up to AooMpps using 2 dilferentiai pair 1394b IFireWIre 800 or $800) was (he 2"" generation Required a new 9 pin connector but was backwards compatibie id 5400 Data rates up to BDflMbps using 2 dilferentiai pair 1394b also had provisions for iSOOMbps and SZOOMbpS (or $1600 and SSZOOI Uses same 9 pin connecior as 5800 5800, $1600, and 53200 require very low capacitance devices ier me high speed data raies Protection 0” data lines is needed iie TPB: and TPAtI and can be done with an array or win discreie low capaciiance devices Application Schematic: 1394b For! SP3003 1394 Interface TFBr TPB+ |- GND TFAV IC TPA+ *Package is shown as transparent PWR SP1003 Recommended TVS Diode Arrays: SP3003704ATG t8I
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS ztaertnehaaueu I Arum Datum APPLICATION SPECIFIC DEVICE SELECTION LVDS (Low Voltage Differential Signaling) Considerations: LVDS is a low noise, low-voltage signal scheme that uses a small curreht ltvpioallv 3,5mAl to generate a voltage drop across a 100 resistor to convey information or data Data rates can vary perapplicatlon but the ANSlfl’lA/EIA-GAA-A standard recommends a maximum ol655Mbps The medium/high speed bus requires a low capacitance device in topF range ltvoicallvl LVDS schemes will varv in terms of the total number oi channels used Protection olE data lines is shown below lie, CLK: and AxtI Application Schematic: LVDS Interface LVDS Controller CLK+ O CLK» I A0+ 0 A0» . A1+ . lc Air 0 A2+ . A2» SP4060 _ GND Recommended TVS Diode Arrays: SP406008ATG t30kV 20A 2 2pF 8 2 5V MSOPVI 0 SP406508ATG t30kV 20A 2 2pF 8 3 3V MSOPVI 0 SP405CLI ZUTG :SOKV 20A 5 OpF I2 2 5V uDFNaI 2 SHV05—4HTG :20kV IOA I 2pF 4 6V SOT236 ©2016 Littelfuse, Inc v.1510»2 26
Ω
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS Ewelil'aEApleEd i Arum oatimaa APPLICATION SPECIFIC DEVICE SELECTION Audio (Speaker/Microphone) Considerations: Audio ports typically have signals that swing above and below GND I'ltet azusw If no DC bias is appIied, a bidirectional protection device should be used as these devices w‘lIl not cIip the analog signal Protection oi 2 data lines is shown below (Let Left and Right] with an array and with discrete devices Some audio ports WIII bias the data bus so that the signal never swings beIow GND (its, 0-5VI If a bias is applied, a unidirectional on bidirectional protection device could be used as neither device would clip tne analog signal The SPIDDl-DZXTG is a good option in this case (not shown for Lei! and Right but is listed belowI Application Schematic: Audio For! Audio Codec Left T Right IC SPTOOZVOZ GND —_- Audio Port Audio Codec Left 0 Right GND- -_- SP1005 IXZ) Recommended TVS Diode Arra SP1 OOZOZJTG SC705 SPIOOSOIWTG FIlpcI'llp I0201) SPHV1 2701 ETGC SODBBZ I0402I SP1 2701 WTGVCVHV FIipcI‘iip I0201) SP100501ETG SODBBZ I0402I SP1001702XTG SOT553 ©2016 Littelfuse, Inc v.1510»2 27
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS ExpelllseApplle-i I new new”: APPLICATION SPECIFIC DEVICE SELECTION Analog Video Considerations: Analog video pons lypically have signals that swing above and beIow GND lie, 22w A bidirectional protection device snould be used as inese devices w‘lII not clip lhe analog signal S-Video, Composile, and RF/CoaxiaI are a lew olthe common low-speed analog video slgnaIs in use today Typical bus speeds WIII not exceed SMHz so capacitance is not much of a concern Protection 0' the lour are shown below IV, C, Video, and RFI Application Schematic: Video For! Video ADC . Luminance . Chrominance Video 0 Composite RF Coaxial IC SP1004 7 GND Recommended TVS Diode Arrays: SP1004»04VTG :8kV 2A SPF 4 6V SOT953 SP1008-01VVTG :15kV 2A 8pF 1 6V FIlpchlp (0201) SP1 (10701va :8kV 2A SpF 1 6V FIlpchlp (0201) SP1007701ETG :8kV 2A SpF 1 6V SODBBZ I0402I ©2016 Littelfuse, Inc v.1510»2 28
% Liltelluse“ ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS ExpelllseApplled l Amen Delluled APPLICATION SPECIFIC DEVICE SELECTION Keypad/Push Buttons Considerations: Keypads and push buttons on electronlc devlces are particularly susceptible to ESD due to constant human interaction Most are DC switches that operate at less than 5v, and lor most appllcalions capacitance will not be a concern The number of ports will vary with the particular applicatlon, but as an example, 4 data lines are shown below he,le For space constrained applications the smoos orSP1005/8P1008 may be considered as they are 0402 and ozoi footprints, respectively Application Schematics: Keypads I/O Controller P1 I P2 . P3 0 IC P4 GND T SPloOl Keypads I/O Controller P1 0 P2 I P3 1 IC P4 GND SP1003IX4) Recommended TVS Diode Arrays: SP1001r04XTG :1 SkV 2A 12pP 4 6V SOT553 SP1003rO1ETG 1:30KV 7A SODF 1 5V SODBSZ I0402I SP100501WTG saokv loA 30pF l 6\/ Fllpchip 10201) SP100301WTG 1:15KV 2A BpF 1 6V FIlpChip I0201) ©2016 Littelfuse, Inc v.1510»2 29
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS mmmwa I mm mm APPLICATION SPECIFIC DEVICE SELECTION SIM Socket Considerations: The SIM (Subscriber Identification ModuleI card has 3 data Iines that are low-speed and low-voltage Given me low speed of me signals, me capacitance will not be a concern Protection oi the 3 data lines and Vaus are shown beIow Ii‘e, CLK, DATA, RESET, PWRI using a single A channeI device and aIternatively discrete 0402 or 0201 devices couId be used as welI Application Schematics: SIM Socket SIM Controller Vaus 0 DATA . CLK T RESET IC SPIOIS '-' GND Recommended TVS Diode Arrays: SP1012705WTG 115W 6,5pF 5 5v FIIpchIp 0.94m 6Imm SP101504WTG :ISKV 65pF 5 5V FIIpChIp 093X0 53mm SP3002704UTG :IZKV 0 BSpF 4 6V UDFN6 (1 6x1 6mm) SP100301ETG :SOKV I7pF 1 5V SODBBZ I0402I SP100501WTG 130KV 23pF 1 6V FIIpChip 10201) SP1013701WTG 130KV 30pF 1 5v FIIpchIp 0.54m 29mm SP102001WTG :SOKV ZOpF 1 5V 01005 FIIpcI’Hp ©2016 Littelfuse, Inc v.1510»2 30
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS ztneltnenaanea l new Deiluled APPLICATION SPECIFIC DEVICE SELECTION RS485 Considerations: There are numerous implementations and applicatlons of R8485 Most applications are multlpolnt and lnvolve two wlres lie A and BI Depending on cabIe length, data rates can vary lrorn 100kbps» ZDMbps Slgnaling IS assvmetrical going lront -7v to +12v The SM7IZ shown below was designed specltlcally tor R3435 conslsling cl 2 channels with a 12v and N standetl voltage in the posltlve and negative dlrectlon , respecllvely, to match the slgnal levels of the bus, To provide only dilferemiaI protection between A and B,the GND connection can be removed irom the SM7IZ but is obviously sliIl connected between the two end pOInlSt Application Schematic: R5485 Port Transceiver 2 i SMTIZ GND Recommended TVS Diode Arrays: SM712-02HTG :SOKV 17A 75pF 2 +12V/-7V SOT23-3 ©2016 Littelfuse, Inc v.1510»2 31
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS ExpenI'aEAppIIE-i I Amer; Dehuved APPLICATION SPECIFIC DEVICE SELECTION PIS-232 Considerations: There are numerous impIemenlalions and applicatIons of RS-232 Many applioaiions use just 3 eres: transmIt dara ITxDI, receive data IRxDI and, ground; however, some instaIlalIons also include RTS (Request «0 SendI and CTS (CIear re Send) to controI the data now This is the example shown beIowr Depending on cabIe length, daia rares can vary from roughly a lew kbps up re 100kbps signaling is delermIned bythe Iine driver beIng used but in mostcases12-15VIslhe maximum The swna shown below wIIl standoff off up io 15v and can be used In a bIdIreclIonal manner to achieve a 15v standolf In both directions R8232 Port Transce‘wer RxD I TXD . HTS I CTS IC NC NC NC NC GND T SM15(X4I Recommended TVS Diode Arrays: SMI SOZHTG :SOKV I7A 75pF 2 I5V SOT233 SOD882 I0402I SPHVI ZOI ETGC :SOKV 5A 46pF I I5V ©2016 Littelfuse, Inc v.1510»2 32
% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS Ewelil'aEAplezd l pram Bellman APPLICATION SPECIFIC DEVICE SELECTION CAN Bus Considerations: There are numerous implementations and applications ol a CAN bus Most applications involve two wires lie, CANH and CANL) Dependlng on cable length, data rates can varvfrom 10kbps-1Mbps The common mode voltage can d‘lfler in the particular application horn -z\/ to 7v or up to -l2v to 12v, The latter case is shown below were the SMZACANA can withstand up to 24v in either direction Ike, hidirectionall verv application should be evaluated thoroughly before using the recommended devices below For applications, that will not exceed 6V in either direction, the SPIDDZ—DZJTG can be considered, Application Schematic: CAN Bus Transceiver CANH T CANL IC SM24CANA GND Recommended TVS Diode Arrays: SMZACANA-OZHTG :ZAKV 3A 11oF 2 24V SOT23-3 SMZACANBOZHTG :SOKV 10A 30oF 2 24V SOT23-3 ©2016 Littelfuse, Inc v.1510»2 33
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% unalfuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS meruoehwhee I Amer, DeIweved APPLICATION SPECIFIC DEVICE SELECTION LIN Bus Considerations: There are numerous impIememalions and applIcatIons of a LIN bus ImpIemenlation FIattopology— one master node and up to 16 sIave nodes The data bus has only one conductor, and one oonheouon to ground The Ienglh of the bus can be up to 40m; the data rate is lImIled to 191kbps The common mode voIlage can driver in the particular appIicalionup to 18v, For IowervoIlage impIementatIons, the smsc should be used; for hIgher voltage Installations, the sow: shouId be used very applicatIon shouId be evaluated thoroughly before hnahzing the use of the recommended device below Application Schematic: LIN . LIN Node Controller SDxxC Tanscelver := Lin Node GNU C master/slave Connector 0 Recommended TVS Diode Arrays: SDI ETC-01 FTG :SOKV 12A 75DF 1 15V SODSZS 10805I SD24C—01FTG :SOKV 7A 50pF 1 24V SODSZS IOBOSI ©2016 Littelfuse, Inc v.1510»2 34
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% I'luenuse ESD PROTECTION DESIGN GUIDE: TVS DIODE ARRAYS Ewerii'aEAppr-i I Amen Deiiuied APPLICATION SPECIFIC DEVICE SELECTION Touchscreen Considerations: There are many dilferem types of iouchscreens (ie, resistive, capacitive, optical, eth and each may require unique protection schemes The protection scheme shown belowis ior atouchscreen interface that requires 4 channels of protection Many device options exist but the ones shovvn beIow provide robust ESD protection in smali form lactor packages with a minimal package height that provide design flexibility Application Schematic: Control Display Interface Chipset SP3022 Ix4) IQC IQC IC lac E IEC *Packages shown as transparent -l- Recommended TVS Diode Arrays: SP3022701ETG :ZZKV 0 35pF 1 5 3V SODBBZ I0402I SP3022701WTG tZZKV 0'35pF 1 5.3V 0201 FIIpChIp SP100501VVTG t3OI
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% Litleltuse“ ExpemxaADnllzd \ Anxwux Damn
ESD Protection Design Guide
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