Fiche technique pour IXFH/IXFM(11,13)N80 de IXYS

:I IXYS IXFH/IXFM IXFH/IXFM1
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© 2000 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 800 V
VDGR TJ= 25°C to 150°C; RGS = 1 MW800 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 11N80 11 A
13N80 13 A
IDM TC= 25°C, pulse width limited by TJM 11N80 44 A
13N80 52 A
IAR TC= 25°C 11N80 11 A
13N80 13 A
EAR TC= 25°C30mJ
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns
TJ £ 150°C, RG = 2 W
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
DG
VDSS ID25 RDS(on)
IXFH/IXFM 11 N80 800 V 11 A 0.95 W
IXFH/IXFM 13 N80 800 V 13 A 0.80 W
trr £ 250 ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 3 mA 800 V
VGS(th) VDS = VGS, ID = 4 mA 2.0 4.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ =25°C 250 mA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 11N80 0.95 W
13N80 0.80 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
91528F(7/97)
(TAB)
.
Obsolete:
IXFM11N80
IXFM13N80
Package
unavailable
':I IXYS ‘K‘ -‘D +J F ’0‘
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© 2000 IXYS All rights reserved
TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-204 AA (IXFM) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 38.61 39.12 1.520 1.540
B 19.43 19.94 - 0.785
C 6.40 9.14 0.252 0.360
D 0.97 1.09 0.038 0.043
E 1.53 2.92 0.060 0.115
F 30.15 BSC 1.187 BSC
G 10.67 11.17 0.420 0.440
H 5.21 5.71 0.205 0.225
J 16.64 17.14 0.655 0.675
K 11.18 12.19 0.440 0.480
Q 3.84 4.19 0.151 0.165
R 25.16 25.90 0.991 1.020
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 8 14 S
Ciss 4200 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 360 pF
Crss 100 pF
td(on) 20 50 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 33 50 ns
td(off) RG = 2 W (External) 63 100 ns
tf32 50 ns
Qg(on) 128 155 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 30 45 nC
Qgd 55 80 nC
RthJC 0.42 K/W
RthCK 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 11N80 11 A
13N80 13 A
ISM Repetitive; 11N80 44 A
pulse width limited by TJM 13N80 52 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr TJ =25°C 250 ns
TJ = 125°C 400 ns
QRM 1mC
IRM 8.5 A
IF = IS
-di/dt = 100 A/ms,
VR = 100 V
IXFH 11N80 IXFH 13N80
IXFM 11N80 IXFM 13N80
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
.
:I IXYS
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© 2000 IXYS All rights reserved
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- Normalized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2 VGS(th)
TC - Degrees C
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0
2
4
6
8
10
12
14
16
18
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Normalized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
ID - Amperes
02468101214161820222426
R
DS(on)
- Ohms
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
VGS = 10V
TJ = 25°C
VGS - Volts
012345678910
I
D
- Amperes
0
2
4
6
8
10
12
14
16
18
TJ = 25°C
VDS = 10V
VDS - Volts
024681012
I
D
- Amperes
0
2
4
6
8
10
12
14
16
18
7V
VGS = 10V
8V
VGS = 15V
ID = 6.5A
11N80
13N80
BVDSS
TJ = 25°C
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
IXFH 11N80 IXFH 13N80
IXFM 11N80 IXFM 13N80
.
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© 2000 IXYS All rights reserved
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.9 Capacitance Curves Fig.10 Source Current vs. Source
to Drain Voltage
Fig.11 Transient Thermal Impedance
VDS - Volts
1 10 100 1000
I
D
- Amperes
0.1
1
10
VSD - Volts
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I
D
- Amperes
0
2
4
6
8
10
12
14
16
18
VCE - Volts
0 5 10 15 20 25
Capacitance - pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K/W
0.001
0.01
0.1
1
D=0.5
Crss
Coss
100ms
10ms
1ms
100µs
10µs
Limited by RDS(on)
Ciss
Single Pulse
Gate Charge - nCoulombs
0 25 50 75 100 125 150
V
GE
- Volts
0
2
4
6
8
10
VDS = 400V
ID = 13A
IG = 10mA
TJ = 125°CTJ = 25°C
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
f = 1 MHz
VDS = 25V
IXFH 11N80 IXFH 13N80
IXFM 11N80 IXFM 13N80
.
IXYS A Lillelluse Technumgy
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.