Fiche technique pour IXT(A,P)1N100 de IXYS

:I IXYS
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ1000 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 1.5 A
IDM TC= 25°C, pulse width limited by TJM 6A
IAR 1.5 A
EAR TC= 25°C6mJ
EAS TC= 25°C 200 mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 3 V/ns
TJ≤ 150°C, RG = 18 Ω
PDTC= 25°C54W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight 4 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
High Voltage MOSFET
G = Gate, D = Drain,
S = Source, TAB = Drain
D (TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 µA 1000 V
VGS(th) VDS = VGS, ID = 25 µA 2.5 4.5 V
IGSS VGS = ±30 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C25µA
V GS = 0 V TJ = 125°C 500 µA
RDS(on) VGS = 10 V, ID = 1.0A 11 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Features
yInternational standard packages
yHigh voltage, Low RDS (on) HDMOSTM
process
yRugged polysilicon gate cell structure
yFast switching times
Applications
ySwitch-mode and resonant-mode
power supplies
yFlyback inverters
yDC choppers
yHigh frequency matching
Advantages
ySpace savings
yHigh power density
98545C(08/04)
GDS
TO-220AB (IXTP)
© 2004 IXYS All rights reserved
G
S
TO-263 AA (IXTA)
D (TAB)
VDSS = 1000 V
ID25 = 1.5 A
RDS(on) = 11 ΩΩ
ΩΩ
Ω
IXTA 1N100
IXTP 1N100
N-Channel Enhancement Mode
Avalanche Energy Rated
mu m m vu \ W'rx w m 1M m ( v 171 err
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 1N100
IXTP 1N100
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 20 V; ID = 1.0A, pulse test 0.8 1.5 S
Ciss 400 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 37 pF
Crss 13 pF
td(on) 18 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 1A 19 ns
td(off) RG= 18Ω, (External) 20 ns
tf18 ns
Qg(on) 14.5 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A 3.0 nC
Qgd 7.5 nC
RthJC 2.3 K/W
RthCK (IXTP) 0.50 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 1.5 A
ISM Repetitive; pulse width limited by TJM 6A
VSD IF = IS, VGS = 0 V, 1.8 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 710 ns
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Bottom Side
TO-220 AD Dimensions
TO-263 AA Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
IXYS 85.9.52 ‘ 233”. Baits/.Lcsmom
IXTA 1N100
IXTP 1N100
Fig. 2. Extended Output Characteristics
@ 25
º
C
0.0
0.5
1.0
1.5
2.0
2.5
0 3 6 9 12 15 18 21 24 27 30
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
4.5V
5V
5.5V
Fig. 3. Output Characteristics
@ 125
º
C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 2 4 6 8 101214161820
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
4.5V
5V
Fig. 1. Output Characteristics
@ 25
º
C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
012345678910
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
4.5
V
5V
5.5
V
Fig. 4. Norm alized R
DS(on
)
vs.
Junction Temperature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalize
d
I
D
= 1.5A
I
D
= 1A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. Norm alized R
DS(on)
vs. I
D
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
00.511.522.5
I
D
- Amperes
R
D S ( o n )
- Normalize
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
L'I IXYS >>\0¢b:5f mummmBE ‘ $5.588
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 1N100
IXTP 1N100
Fig. 11. Capacitance
10
100
1000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarad
s
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0246810121416
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 500V
I
D
= 1A
I
G
= 1m A
Fig. 7. Input Admittance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
3.5 4 4.5 5 5.5 6
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0.0
0.5
1.0
1.5
2.0
2.5
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
I
D
- Amperes
g
f s - Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs .
Source-To-Drain Voltage
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.4 0.5 0.6 0.7 0.8 0.9
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Maximum Transient Therm al
Resistance
0.1
1.0
10.0
1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC /
W
IXYS A Lillelluse Technumgy
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