Fiche technique pour TC4421A,22A de Microchip Technology

Q ‘MICROCHIP TC4421A/TC4422A n I
2005-2013 Microchip Technology Inc. DS21946B-page 1
TC4421A/TC4422A
Features
• High Peak Output Current: 10A (typ.)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2A (max.)
• Matched Fast Rise and Fall Times:
- 15 ns with 4,700 pF Load
- 135 ns with 47,000 pF Load
• Matched Short Propagation Delays: 42 ns (typ.)
• Low Supply Current:
- With Logic ‘1’ Input – 130 µA (typ.)
- With Logic ‘0’ Input – 33 µA (typ.)
• Low Output Impedance: 1.2 (typ.)
• Latch-Up Protected: Will Withstand 1.5A Output
Reverse Current
• Input Will Withstand Negative Inputs Up To 5V
• Pin-Compatible with the TC4420/TC4429
and TC4421/TC4422 MOSFET Drivers
• Space-Saving, Thermally-Enhanced, 8-Pin DFN
Package
Applications
• Line Drivers for Extra Heavily-Loaded Lines
• Pulse Generators
• Driving the Largest MOSFETs and IGBTs
• Local Power ON/OFF Switch
• Motor and Solenoid Driver
• LF Initiator
General Description
The TC4421A/TC4422A are improved versions of the
earlier TC4421/TC4422 family of single-output
MOSFET drivers. These devices are high-current buf-
fer/drivers capable of driving large MOSFETs and Insu-
lated Gate Bipolar Transistors (IGBTs). The
TC4421A/TC4422A have matched output rise and fall
times, as well as matched leading and falling-edge
propagation delay times. The TC4421A/TC4422A
devices also have very low cross-conduction current,
reducing the overall power dissipation of the device.
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground
terminals. They can accept, without damage or logic
upset, more than 1A inductive current of either polarity
being forced back into their outputs. In addition, all
terminals are fully protected against up to 4 kV of
electrostatic discharge.
The TC4421A/TC4422A inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300 mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.
With both surface-mount and pin-through-hole
packages, in addition to a wide operating temperature
range, the TC4421A/TC4422A family of 9A MOSFET
drivers fit into most any application where high gate/line
capacitance drive is required.
Package Types(1)
8-Pin
1
2
3
4
VDD
5
6
7
8
OUTPUT
GND
VDD
INPUT
NC
GND
OUTPUT
TC4421A
TC4422A
5-Pin TO-220
VDD
GND
INPUT
GND
OUTPUT
TC4421A
TC4422A
Tab is
Common
to VDD
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated.
TC4421A TC4422A
VDD
OUTPUT
GND
OUTPUT
PDIP/SOIC 8-Pin DFN(2)
VDD
INPUT
NC
GND
2
3
45
6
7
8
1
TC4421A
TC4422A
VDD
OUTPUT
GND
OUTPUT
TC4421A TC4422A
VDD
OUTPUT
GND
OUTPUT
9A High-Speed MOSFET Drivers
TC4421A/TC4422A
DS21946B-page 2 2005-2013 Microchip Technology Inc.
Functional Block Diagram
Effective
Input
Output
Input
GND
VDD
300 mV
4.7V
TC4421A
C = 25 pF
TC4422A
Inverting
Non-Inverting
130 µA
Cross-Conduction
Reduction and Pre-Drive
Circuitry
Output
2005-2013 Microchip Technology Inc. DS21946B-page 3
TC4421A/TC4422A
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage .....................................................+20V
Input Voltage .................... (VDD + 0.3V) to (GND – 5V)
Input Current (VIN > VDD)...................................50 mA
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V VDD 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.4 1.8 — V
Logic ‘0’, Low Input Voltage VIL —1.30.8V
Input Current IIN –10 — +10 µA 0VVINVDD
Input Voltage VIN –5 — VDD – 0.3 V
Output
High Output Voltage VOH VDD – 0.025 — — V DC Test
Low Output Voltage VOL — — 0.025 V DC Test
Output Resistance, High ROH —1.251.5IOUT = 10 mA, VDD = 18V
Output Resistance, Low ROL —0.81.1IOUT = 10 mA, VDD = 18V
Peak Output Current IPK —10.0—AV
DD = 18V
Continuous Output Current IDC 2 — — A 10V VDD 18V, TA = +25°C
(TC4421A/TC4422A CAT only)
(Note 2)
Latch-Up Protection
Withstand Reverse Current IREV — >1.5 — A Duty cycle2%, t 300 µsec
Switching Time (Note 1)
Rise Time tR—2834nsFigure 4-1, CL = 10,000 pF
Fall Time tF—2632nsFigure 4-1, CL = 10,000 pF
Propagation Delay Time tD1 —3845nsFigure 4-1, CL = 10,000 pF
Propagation Delay Time tD2 —4249nsFigure 4-1, CL = 10,000 pF
Power Supply
Power Supply Current IS— 130 250 µA VIN = 3V
—35100µAV
IN = 0V
Operating Input Voltage VDD 4.5 — 18 V
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested.
TC4421A/TC4422A
DS21946B-page 4 2005-2013 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V VDD 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.4 — — V
Logic ‘0’, Low Input Voltage VIL ——0.8V
Input Current IIN –10 — +10 µA 0VVINVDD
Output
High Output Voltage VOH VDD – 0.025 — — V DC Test
Low Output Voltage VOL ——0.025VDC Test
Output Resistance, High ROH ——2.0IOUT = 10 mA, VDD = 18V
Output Resistance, Low ROL ——1.6IOUT = 10 mA, VDD = 18V
Switching Time (Note 1)
Rise Time tR—3845nsFigure 4-1, CL = 10,000 pF
Fall Time tF—3340nsFigure 4-1, CL = 10,000 pF
Propagation Delay Time tD1 —50.460nsFigure 4-1, CL = 10,000 pF
Propagation Delay Time tD2 —5360nsFigure 4-1, CL = 10,000 pF
Power Supply
Power Supply Current IS— 200 500 µA VIN = 3V
— 50 150 µA VIN = 0V
Operating Input Voltage VDD 4.5 — 18 V
Note 1: Switching times ensured by design.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range (V) TA–40 — +125 °C
Maximum Junction Temperature TJ— — +150 °C
Storage Temperature Range TA–65 — +150 °C
Package Thermal Resistances
Thermal Resistance, 5L-TO-220 JA — 71 — °C/W Without heat sink
Thermal Resistance, 8L-6x5 DFN JA — 33.2 — °C/W Typical 4-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP JA —125—°C/W
Thermal Resistance, 8L-SOIC JA —155—°C/W
—f %/
2005-2013 Microchip Technology Inc. DS21946B-page 5
TC4421A/TC4422A
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
FIGURE 2-1: Rise Time vs. Supply
Voltage.
FIGURE 2-2: Rise Time vs. Capacitive
Load.
FIGURE 2-3: Fall Time vs. Supply
Voltage.
FIGURE 2-4: Fall Time vs. Capacitive
Load.
FIGURE 2-5: Rise and Fall Times vs.
Temperature.
FIGURE 2-6: Crossover Energy vs Supply
Voltage.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
20
40
60
80
100
120
140
160
180
4 6 8 1012141618
Supply Voltage (V)
Rise Time (ns)
22,000 pF
10,000 pF
1,000 pF 100 pF
0
50
100
150
200
250
300
100 1000 10000 100000
Capacitive Load (pF)
Rise Time (ns)
5V
10V
15V
0
20
40
60
80
100
120
140
160
180
4 6 8 10 12 14 16 18
Supply Voltage (V)
Fall Time (ns)
22,000 pF
10,000 pF
1,000 pF 100 pF
0
50
100
150
200
250
300
100 1000 10000 100000
Capacitive Load (pF)
Fall Time (ns)
5V
15V
10V
20
25
30
35
40
45
50
55
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Time (ns)
tRISE
tFALL
VDD = 15V
1E-9
1E-8
1E-7
4 6 8 10 12 14 16 18
Supply Voltage (V)
Crossover Energy (A·sec)
10-7
10-8
10-9
TC4421A/TC4422A
DS21946B-page 6 2005-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
FIGURE 2-7: Propagation Delay vs.
Supply Voltage.
FIGURE 2-8: Propagation Delay vs. Input
Amplitude.
FIGURE 2-9: Propagation Delay vs.
Temperature.
FIGURE 2-10: Quiescent Supply Current
vs. Supply Voltage.
FIGURE 2-11: Quiescent Supply Current
vs. Temperature.
FIGURE 2-12: Input Threshold vs.
Temperature.
30
35
40
45
50
55
60
65
70
75
80
4 6 8 10 12 14 16 18
Supply Voltage (V)
Propagation Delay (nS)
tD2
tD1
CLOAD
= 10,000 pF
40
45
50
55
60
65
70
75
2345678910
Input Amplitude (V)
Propagation Delay (ns)
tD1
tD2
VDD = 12V
30
35
40
45
50
55
60
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Propagation Delay (ns)
tD2
tD1
VDD = 12V
VIN = 5V
CLOAD = 10,000 pF
20
40
60
80
100
120
140
4 6 8 10 12 14 16 18
Supply Voltage (V)
IQUIESCENT (µA)
INPUT = High
INPUT = Low
20
40
60
80
100
120
140
160
180
200
220
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
IQUIESCENT (µA)
INPUT = Low
INPUT = High
VDD = 18V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Input Threshold (V)
VIH
VIL
VDD = 12V
/ / / / 7 / é
2005-2013 Microchip Technology Inc. DS21946B-page 7
TC4421A/TC4422A
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
FIGURE 2-13: Input Threshold vs. Supply
Voltage.
FIGURE 2-14: High-State Output
Resistance vs. Supply Voltage.
FIGURE 2-15: Low-State Output
Resistance vs. Supply Voltage.
FIGURE 2-16: Supply Current vs.
Capactive Load (VDD = 18V).
FIGURE 2-17: Supply Current vs.
Capactive Load (VDD = 12V).
FIGURE 2-18: Supply Current vs.
Capactive Load (VDD = 6V).
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
4 6 8 1012141618
Supply Voltage (V)
Input Threshold (V)
VIH
VIL
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
4 6 8 1012141618
Supply Voltage (V)
ROUT-HI (:)
TJ = 25°C
TJ = 150°C
VIN = 5V (TC4422A)
VIN = 0V (TC4421A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4 6 8 1012141618
Supply Voltage (V)
ROUT-LO (:)
TJ = 25°C
TJ = 150°C
VIN = 0V (TC4422A)
VIN = 5V (TC4421A)
0
20
40
60
80
100
120
140
160
180
100 1,000 10,000 100,000
Capacitive Load (pF)
Supply Current (mA)
2 MHz 1 MHz
200 kHz
100 kHz
50 kHz
10 kHz
VDD = 18V
0
20
40
60
80
100
120
140
160
180
200
100 1,000 10,000 100,000
Capacitive Load (pF)
Supply Current (mA)
2 MHz 1 MHz
200 kHz
100 kHz
50 kHz
10 kHz
VDD = 12V
0
20
40
60
80
100
120
140
160
180
200
220
100 1,000 10,000 100,000
Capacitive Load (pF)
Supply Current (mA)
2 MHz
1 MHz
200 kHz
100 kHz
50 kHz
10 kHz
VDD = 6V
+w , /7/7A /
TC4421A/TC4422A
DS21946B-page 8 2005-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
FIGURE 2-19: Supply Current vs.
Frequency (VDD = 18V).
FIGURE 2-20: Supply Current vs.
Frequency (VDD = 12V).
FIGURE 2-21: Supply Current vs.
Frequency (VDD = 6V).
0
20
40
60
80
100
120
140
160
180
10 100 1000 10000
Frequency (kHz)
Supply Current (mA)
VDD = 18V
470 pF
1000 pF
10,000 pF
22,000 pF
47,000 pF
0.1 µF
0
20
40
60
80
100
120
140
160
180
200
10 100 1000 10000
Frequency (kHz)
Supply Current (mA)
470 pF
1000 pF
10,000 pF
22,000 pF
47,000 pF
0.1 µ
F
VDD = 12V
0
20
40
60
80
100
120
140
160
180
200
220
10 100 1000 10000
Frequency (kHz)
Supply Current (mA)
470 pF
1000 pF
10,000 pF
22,000 pF
47,000 pF
0.1 µF
VDD = 6V
2005-2013 Microchip Technology Inc. DS21946B-page 9
TC4421A/TC4422A
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Supply Input (VDD)
The VDD input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The VDD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A minimum value of 1.0 µF is suggested.
3.2 Control Input
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.3 CMOS Push-Pull Output
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 9.0A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
3.4 Ground
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
3.5 Exposed Metal Pad
The exposed metal pad of the 6x5 DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a Printed Circuit Board (PCB) to aid in
heat removal from the package.
3.6 Metal Tab
The metal tab of the TO-220 package is connected to
the VDD potential of the device. This connection to VDD
can be used as a current carrying path for the device.
Pin No.
8-Pin PDIP,
SOIC
Pin No.
8-Pin DFN
Pin No.
5-Pin TO-220 Symbol Description
11—V
DD Supply input, 4.5V to 18V
2 2 1 INPUT Control input, TTL/CMOS-compatible input
3 3 — NC No connection
4 4 2 GND Ground
5 5 4 GND Ground
6 6 5 OUTPUT CMOS push-pull output
7 7 — OUTPUT CMOS push-pull output
883V
DD Supply input, 4.5V to 18V
—PAD— NCExposed metal pad
——TABV
DD Metal tab is at the VDD potential
TC4421A/TC4422A
DS21946B-page 10 2005-2013 Microchip Technology Inc.
4.0 APPLICATIONS INFORMATION
FIGURE 4-1: Switching Time Test Circuits.
Inverting Driver
Non-Inverting Driver
Input
tD1 tF
tR
tD2
Input: 100 kHz,
square wave,
tRISE = tFALL 10 nsec
Output
Input
Output
tD1 tF
tR
tD2
+5V
10%
90%
10%
90%
10%
90%
+18V
0V
90%
10%
10% 10%
90%
+5V
+18V
0V
0V
0V
90%
26
7
54
18
CL = 10,000 pF
0.1 µF 4.7 µF
Input
VDD = 18V
Output
0.1 µF
TC4421A
TC4422A
Note: Pinout shown is for the DFN, PDIP and SOIC packages.
VDD VDD
Input
GND GND
Output
Output
NNN
2005-2013 Microchip Technology Inc. DS21946B-page 11
TC4421A/TC4422A
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
XXXXXXXX
XXXXXNNN
YYWW
8-Lead PDIP (300 mil) Example:
TC4421A
PA ^ 256
0514
5-Lead TO-220
XXXXXXXXX
XXXXXXXXX
YYWWNNN
Example:
TC4421A
XXXXXXXXX
0514256
VAT^^
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
8-Lead DFN Example:
TC4421A
VMF
^
0514
256
8-Lead SOIC (150 mil) Example:
XXXXXXXX
XXXXYYWW
NNN
TC4421A
SN 0514
256
3
e
3
e
3
e
3
e
XXXXXXX
XXXXXXX
XXYYWW
NNN
TC4421A/TC4422A
DS21946B-page 12 2005-2013 Microchip Technology Inc.
5-Lead Plastic Transistor Outline (AT) (TO-220)
LH1
Q
E
b
e1
e
C1
J1
F
A
D
a
(5X)
ØP
EJECTOR PIN
e3
Drawing No. C04-036
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" (0.254mm) per side.
JEDEC equivalent: TO-220
*Controlling Parameter
Mold Draft Angle
Lead Width
Lead Thickness
a
C1
b
.014
Dimension Limits
Overall Height
Lead Length
Overall Width
Lead Pitch
A
L
E
.540
MIN
e
Units
.060
INCHES*
.022 0.36 0.56
MILLIMETERS
.190
.560 13.72
MINMAX
4.83
14.22
MAX
.160 4.06
3° 7° 3° 7°
Overall Length D
1.020.64.040.025
Overall Lead Centers e1 .263
.385
.560
.273 6.68 6.93
.072 1.52 1.83
.415 9.78 10.54
.590 14.22 14.99
Through Hole Diameter P .146 .156 3.71 3.96
J1Base to Bottom of Lead .090 2.29.115 2.92
Through Hole Center Q.103 2.87.113 2.62
Flag Thickness F .045 1.40.055 1.14
Flag Length H1 .234 6.55.258 5.94
Space Between Leads e3 .030 1.02.040 0.76
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
n [)2 / 7 MN I EXPOSED I I I I METAL 2 ‘ ‘NDEX PAD E2 TOP VIEW BOTTOM VIEW A2 A AV Umu \NCHES M‘LUMETERS" Dimensmn mm: MW NOM MAX MIN NOM MAX Numbev of Pm; n E H mm P use asc ‘ 27 asc OVER“ Helghl A 033 035 037 0 E5 0 90 0 95 Package Tmckness A2 03‘ 035 037 a so u 39 o 95 Slandafl M 000 0004 ,002 000 00‘ 0,05 BaxeThIcknexx A3 uc7 cos 009 a w 020 oz: OvevaH LEngKh E ‘95 I97 ‘99 4 95 S 00 5,05 Exposed Pad Length E2 ‘52 157 163 3 BS 4 00 A15 OveraH W‘dlh D .234 136 .238 5 95 6 00 6.05 Exposed Pad Wwdth DZ 089 09] 093 2 25 2 30 1 35 Lead Wm B .014 m 5 m9 0 35 u 40 0,47 Lead Lengm L 014 025 0 60 0 65 Mme:- JEDEC eqmvn‘em MO 120 Dvawmg No (om: mm mm;
2005-2013 Microchip Technology Inc. DS21946B-page 13
TC4421A/TC4422A
8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated
TC4421A/TC4422A
DS21946B-page 14 2005-2013 Microchip Technology Inc.
8-Lead Plastic Dual In-line (PA) – 300 mil (PDIP)
B1
B
A1
A
L
A2
p
E
eB
c
E1
n
D
1
2
Units INCHES* MILLIMETERS
Dimension Limits MIN NOM MAX MIN NOM MAX
Number of Pins n88
Pitch p.100 2.54
Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32
Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68
Base to Seating Plane A1 .015 0.38
Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26
Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60
Overall Length D .360 .373 .385 9.14 9.46 9.78
Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43
Lead Thickness c.008 .012 .015 0.20 0.29 0.38
Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78
Lower Lead Width B .014 .018 .022 0.36 0.46 0.56
Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92
Mold Draft Angle Top 5 10 15 5 10 15
Mold Draft Angle Bottom 5 10 15 5 10 15
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
JEDEC Equivalent: MS-001
Drawing No. C04-018
.010” (0.254mm) per side.
§ Significant Characteristic
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
2005-2013 Microchip Technology Inc. DS21946B-page 15
TC4421A/TC4422A
8-Lead Plastic Small Outline (OA) – Narrow, 150 mil (SOIC)
Foot Angle 048048
1512015120
Mold Draft Angle Bottom
1512015120
Mold Draft Angle Top
0.510.420.33.020.017.013BLead Width
0.250.230.20.010.009.008
c
Lead Thickness
0.760.620.48.030.025.019LFoot Length
0.510.380.25.020.015.010hChamfer Distance
5.004.904.80.197.193.189DOverall Length
3.993.913.71.157.154.146
E1
Molded Package Width
6.206.025.79.244.237.228EOverall Width
0.250.180.10.010.007.004A1Standoff §
1.551.421.32.061.056.052A2Molded Package Thickness
1.751.551.35.069.061.053AOverall Height
1.27.050
p
Pitch
88
n
Number of Pins
MAXNOMMINMAXNOMMINDimension Limits
MILLIMETERSINCHES*Units
2
1
D
n
p
B
E
E1
h
L
c
45
A2
A
A1
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
§ Significant Characteristic
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
TC4421A/TC4422A
DS21946B-page 16 2005-2013 Microchip Technology Inc.
NOTES:
2005-2013 Microchip Technology Inc. DS21946B-page 17
TC4421A/TC4422A
APPENDIX A: REVISION HISTORY
Revision A (May 2005)
• Original Release of this Document.
Revision B (January 2013)
Added a note to each package outline drawing.
TC4421A/TC4422A
DS21946B-page 18 l 2005-2013 Microchip Technology Inc.
NOTES:
PART NO. ><><>< 4|="">
2005-2013 Microchip Technology Inc. DS21946B-page 19
TC4421A/TC4422A
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: TC4421A: 9A High-Speed MOSFET Driver, Inverting
TC4422A: 9A High-Speed MOSFET Driver, Non-Inverting
Temperature Range: V = -40°C to +125°C
Package: * AT = TO-220, 5-lead
MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
(Tape and Reel)
PA = Plastic DIP (300 mil Body), 8-lead
OA = Plastic SOIC (150 mil Body), 8-lead
OA713 = Plastic SOIC (150 mil Body), 8-lead
(Tape and Reel)
*All package offerings are Pb Free (Lead Free).
PART NO. XXX
PackageTemperature
Range
Device
Examples:
a) TC4421AVAT: 9A High-Speed Inverting
MOSFET Driver,
TO-220 package,
-40°C to +125°C.
b) TC4421AVOA: 9A High-Speed Inverting
MOSFET Driver,
SOIC package,
-40°C to +125°C.
c) TC4421AVMF: 9A High-Speed Inverting
MOSFET Driver,
DFN package,
-40°C to +125°C.
a) TC4422AVPA: 9A High-Speed
Non-Inverting MOSFET
Driver, PDIP package,
-40°C to +125°C.
b) TC4422AVOA: 9A High-Speed
Non-Inverting
MOSFET Driver,
SOIC package,
-40°C to +125°C.
c) TC4422AVMF: 9A High-Speed
Non-Inverting MOSFET
Driver, DFN package,
-40°C to +125°C.
XXX
Tape & Reel
TC4421A/TC4422A
DS21946B-page 20 2005-2013 Microchip Technology Inc.
NOTES:
YSTEM <2>
2005-2013 Microchip Technology Inc. DS21946B-page 21
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2005-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620769218
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
6‘ ‘MICRDCHIP
DS21946B-page 22 2005-2013 Microchip Technology Inc.
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11/29/12