ThunderFETs

Vishay/Siliconix has released a wide selection of 80 and 100 V ThunderFETs in industry standard packages.

Image of Vishay/Siliconix's ThunderFET®The ThunderFET® from Vishay/Siliconix has been designed to offer excellent efficiency in high density power supplies and at the same time be compatible with all common MOSFET control circuits.

This unique design feature allows for easy device selection without the need to be concerned about the type of MOSFET gate driver that is being used. From a technical perspective the ThunderFET® provides the lowest conduction losses at gate voltages down to 4.5 V without increasing gate driver switching losses.

Features
  • 5 V LogicLevel to reduce gate driver power losses
  • Low CDSS "A" version ~ 40% improvement
  • Over 60% RDS(ON) reduction from TrenchFET
  • Up to 50% QGO reduction comparing to TrenchFET at similar RDS(ON)
Applications
  • Telecommunications bricks
  • Synchronous rectification for server
  • POE (Power over Ethernet)
  • Renewable energy
  • Motor control and drive
  • Telecom DC-DC
  • Off-line UPSDC-AC inverters
  • Boost converters for LED lighting

ThunderFET

ImageRéférence fabricantDescriptionQuantité disponiblePrix
MOSFET N-CH 100V 30A PPAK1212-8SIS892DN-T1-GE3MOSFET N-CH 100V 30A PPAK1212-814621 - Immédiatement$1.68Afficher les détails
MOSFET N-CH 80V 60A PPAK SO-8SIR880DP-T1-GE3MOSFET N-CH 80V 60A PPAK SO-85767 - Immédiatement$2.70Afficher les détails
MOSFET N-CH 80V 60A PPAK SO-8SIR826DP-T1-GE3MOSFET N-CH 80V 60A PPAK SO-87303 - Immédiatement$2.85Afficher les détails
MOSFET N-CH 100V 60A PPAK SO-8SIR870ADP-T1-GE3MOSFET N-CH 100V 60A PPAK SO-846050 - Immédiatement$2.22Afficher les détails
MOSFET N-CH 100V 60A PPAK SO-8SIR846DP-T1-GE3MOSFET N-CH 100V 60A PPAK SO-81449 - Immédiatement$2.54Afficher les détails
MOSFET N-CH 100V 60A PPAK SO-8SIR882ADP-T1-GE3MOSFET N-CH 100V 60A PPAK SO-815737 - Immédiatement$2.54Afficher les détails
MOSFET N-CH 100V 60A PPAK SO-8SIR804DP-T1-GE3MOSFET N-CH 100V 60A PPAK SO-82520 - Immédiatement$2.79Afficher les détails
Date de publication : 2013-07-02