STMicroelectronics

STripFET™ V Series Power MOSFETs

Low voltage MOSFETs from STMicroelectronics are critical contributors to the efficiency of switching topologies

Image of STMicroelectronics' STripFET™ Series V Power MOSFETsSTMicroelectronics' low voltage MOSFETs are critical contributors to the efficiency of switching topologies used in DC/DC converter and motor control applications. For example, with a synchronous buck converter, the major contributions to the losses in high frequency switching are switching losses in the high side (H-S) FET (control FET) and conduction losses in the low side (L-S) FET (sync FET). ST's STripFET V technology has one of the best switching figures of merit (RDS(on) * Qg) and thus, is ideal for H-S. Additionally, the STripFET VI DeepGATE™ has one of the lowest RDS (on) values per area and thus, is better for L-S. ST offers a series of 30-volt (H5 and H6) and 40-volt (F5 and F6) FETs in PowerFLAT™ packages to combine the features of the latest STripFET technologies for H-S and L-S combinations with the improved power density and thermal capability of PowerFLAT packaging.

Features

  • RDS(on) * Qg industry benchmark
  • Extremely low on-resistance RDS(on)
  • Very low switching gate charge
  • High avalanche ruggedness
  • Low gate drive power losses
  • High power density

STripFET V

ImageRéférence fabricantDescriptionCourant - Drain continu (Id) à 25°CQuantité disponiblePrixAfficher les détails
MOSFET N-CH 20V 2.3A SOT23STR2N2VH5MOSFET N-CH 20V 2.3A SOT232,3A (Tj)58746 - Immédiatement$1.02Afficher les détails
MOSFET N-CH 30V 80A DPAKSTD86N3LH5MOSFET N-CH 30V 80A DPAK80 A (Tc)7490 - Immédiatement$1.33Afficher les détails
MOSFET N-CH 30V 9A POWERFLATSTL10N3LLH5MOSFET N-CH 30V 9A POWERFLAT9 A (Tc)8377 - Immédiatement$1.02Afficher les détails
MOSFET N-CH 30V 56A POWERFLATSTL56N3LLH5MOSFET N-CH 30V 56A POWERFLAT56 A (Tc)5949 - Immédiatement$1.08Afficher les détails
MOSFET N-CH 30V 10A 8SOSTS10N3LH5MOSFET N-CH 30V 10A 8SO10 A (Tc)3741 - Immédiatement$1.22Afficher les détails
Date de publication : 2013-01-08

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