MMBT5550L-51L, SMMBT5551L Datasheet by onsemi

L 0N Semimnduuztor® www.0nsemi.com % MMBTSSSILTIG SOT—23 3,000 /Tape &
© Semiconductor Components Industries, LLC, 1994
May, 2020 − Rev. 13
1Publication Order Number:
MMBT5550LT1/D
High Voltage Transistors
NPN Silicon
MMBT5550L, MMBT5551L
Features
•S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MMBT5550
MMBT5551
VCEO 140
160
Vdc
Collector−Base Voltage
MMBT5550
MMBT5551
VCBO 160
180
Vdc
Emitter−Base Voltage VEBO 6.0 Vdc
Collector Current − Continuous IC600 mAdc
Electrostatic Discharge
Human Body Model
Machine Model
ESD
> 8000
> 400
V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) @TA = 25°C
Derate Above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate (Note 2) @TA = 25°C
Derate Above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MARKING
DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
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1
x1x M G
G
SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
3
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT5550LT1G,
NSVMMBT5550LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
MMBT5551LT1G SOT−23
(Pb−Free)
3,000 / Tape &
Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
x1x = Device Code
M1F = MMBT5550LT
G1 = MMBT5551LT
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
SMMBT5551LT1G SOT−23
(Pb−Free)
3,000 / Tape &
Reel
MMBT5551LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
SMMBT5551LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
MMBT5550LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
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MMBT5550L, MMBT5551L
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0) MMBT5550
MMBT5551
V(BR)CEO 140
160
−
−
Vdc
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0) MMBT5550
MMBT5551
V(BR)CBO 160
180
−
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO 6.0 −
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0) MMBT5550
(VCB = 120 Vdc, IE = 0) MMBT5551
(VCB = 100 Vdc, IE = 0, TA = 100°C) MMBT5550
(VCB = 120 Vdc, IE = 0, TA = 100°C) MMBT5551
ICBO
−
−
−
−
100
50
100
50
nAdc
mAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
−50
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5550
MMBT5551
(IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5550
MMBT5551
(IC = 50 mAdc, VCE = 5.0 Vdc) MMBT5550
MMBT5551
hFE 60
80
60
80
20
30
−
−
250
250
−
−
−
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types
(IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550
MMBT5551
VCE(sat)
−
−
−
0.15
0.25
0.20
Vdc
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types
(IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550
MMBT5551
VBE(sat)
−
−
−
1.0
1.2
1.0
Vdc
Collector Emitter Cut−off
(VCB = 10 V) Both Types
(VCB = 75 V)
ICES
−
−
50
100
nA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
MMBT5550L, MMBT5551L
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3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
500
h , DC CURRENT GAIN
FE
TJ = 125°C
-55°C
25°C
5.0
10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
200
30
20
300
100
50
7.0
VCE = 1.0 V
VCE = 5.0 V
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
IC = 1.0 mA
0
0.3
0.005 0.01 0.2 0.5 1.0 2.0 20 50
0.8
0.5
0.4
0.9
0.7
0.6
0.2
0.02 0.05 0.1 10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
10 mA 30 mA 100 mA
5.0
Figure 3. Collector Cut−Off Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
101
10-5
0.4 0.3 0.1
100
10-1
10-2
10-3
10-4
0.2 0 0.1 0.2 0.40.3 0.60.5
VCE = 30 V
TJ = 125°C
75°C
25°C
IC = ICES
, COLLECTOR CURRENT (A)μIC
REVERSE FORWARD
IC, COLLECTOR CURRENT (A)
0.30
0.001 0.01 0.1
150°C
IC/IB = 10
0.0001
Figure 4. VCE(sat)
0.25
0.20
0.10
0.05
0
VCE(sat), Coll-Emitt Saturation Voltage (V)
0.15
25°C
-55°C
MMBT5550L, MMBT5551L
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4
TYPICAL CHARACTERISTICS
IC, COLLECTOR CURRENT (A)
1.10
0.001 0.01 0.1
150°C
IC/IB = 10
0.0001
Figure 5. VBE(sat)
0.70
0.60
0.40
0.30
0.20
VBE(sat), Base-Emitt Saturation Voltage (V)
0.50
25°C
-55°C
0.80
0.90
1.00
IC, COLLECTOR CURRENT (A)
1.10
0.001 0.01 0.1
150°C
VCE = 10 V
0.0001
Figure 6. VBE(on)
0.70
0.60
0.40
0.30
0.20
VBE(on), Base-Emitter Voltage (V)
0.50
25°C
-55°C
0.80
0.90
1.00
IC, COLLECTOR CURRENT (mA)
2.5
qVC for VCE(sat)
qVB for VBE(sat)
Figure 7. Temperature Coefficients
TJ = - 55°C to +135°C
V, TEMPERATURE COEFFICIENT (mV/ C)°θ
2.0
1.5
1.0
0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
1.0 2.0 5.0 10 20 50 1000.1 0.2 0.5 3.0 300.3
C, CAPACITANCE (pF)
VR, REVERSE VOLTAGE (VOLTS)
100
1.0
0.2 0.5 1.0 2.0 5.0 10 20
Cibo
70
50
30
20
10
7.0
5.0
3.0
2.0
0.3 0.7 3.0 7.0
Cobo
TJ = 25°C
Figure 8. Capacitances
10.2 V
Vin
10 ms
INPUT PULSE
VBB
-8.8 V
100
RB
5.1 k
0.25 mF
Vin 100 1N914
Vout
RC
VCC
30 V
3.0 k
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
Values Shown are for IC @ 10 mA
Figure 9. Switching Time Test Circuit
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MMBT5550L, MMBT5551L
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TYPICAL CHARACTERISTICS
IC, COLLECTOR CURRENT (mA)
1000
1.0 100.1
1
10
100
100 1000
VCE = 1 V
TA = 25°C
Figure 10. Current Gain Bandwidth Product
fT, Current Gain Bandwidth Product (Mhz)
VCE, COLLECTOR EMITTER VOLTAGE (V)
1
1.0 10
0.001
0.01
0.1
100 1000
10 mS
Figure 11. Safe Operating Area
IC, COLLECTOR CURRENT (A)
1.0 S
C, CAPACITANCE (pF)
VR, REVERSE VOLTAGE (VOLTS)
100
1.0
0.2 0.5 1.0 2.0 5.0 10 20
Cibo
70
50
30
20
10
7.0
5.0
3.0
2.0
0.3 0.7 3.0 7.0
Cobo
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
1000
0.3 1.0 10 20 30 50
0.50.2
t, TIME (ns)
10
20
30
50
100
200
300
500
2.0 100 200
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
3.0 5.0
tr @ VCC = 30 V
td @ VEB(off) = 1.0 V
VCC = 120 V
Figure 12. Capacitances Figure 13. Turn−On Time
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SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODE−ANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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