NCV8715 Datasheet by onsemi

Flgure1.1'yplcalAppllcatlon Schemsllc r0 Semmauum Component: Mame; uc‘ 2m November, 2015 — new 7 0N Semiconductor® www.0nseml.com
© Semiconductor Components Industries, LLC, 2016
November, 2018 − Rev. 7
1Publication Order Number:
NCV8715/D
NCV8715
50 mA Ultra-Low Iq, Wide
Input Voltage, Low Dropout
Linear Voltage Regulator
The NCV8715 is 50 mA LDO Linear Voltage Regulator. It is a very
stable and accurate device with ultra−low ground current consumption
(4.7 mA over the full output load range) and a wide input voltage range
(up to 24 V). The regulator incorporates several protection features
such as Thermal Shutdown and Current Limiting.
Features
•Operating Input Voltage Range: 2.5 V to 24 V
•Fixed Voltage Options Available: 1.2 V to 5.0 V
•Ultra Low Quiescent Current: Max. 5.8 mA Over Full Load and
Temperature
•±2% Accuracy Over Full Load, Line and Temperature Variations
•PSRR: 52 dB at 100 kHz
•Noise: 190 mVRMS from 200 Hz to 100 kHz
•Thermal Shutdown and Current Limit protection
•Available in XDFN6 1.5 x 1.5 mm and SC−70 (SC−88A) Package
•NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable; Device Temperature Grade 1: −40°C to
+125°C Ambient Operating Temperature Range
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
•Infotainment, Audio
•Communication Systems
•Safety Systems
Figure 1. Typical Application Schematic
NCV8715
NC
IN OUT
NC
GND
1.2 V < Vout < 5 V
2.5 V < Vout < 24 V
1 mF
Ceramic
1 mF
Ceramic
XDFN6
CASE 711AE
MARKING
DIAGRAMS
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See detailed ordering, marking and shipping information on
page 19 of this data sheet.
ORDERING INFORMATION
XXX = Specific Device Code
M = Date Code
G= Pb−Free Package
XXXMG
G
1
SC−70−5
(SC−88A)
CASE 419A
XXX MG
G
(Note: Microdot may be in either location)
our: EEPROM IHERMAL snumoww DR‘VER W‘TH cuanem mm I :1 J SC-88A (sc-7o-5) (Top View) 1 5 2 3 4 NC GND NC I OUT XDFN61.5x1.5, (Top View) IN 1 NC 2 GND 3 0.5P 6 OUT 5 NC 4 NC www.cnsemi.com
NCV8715
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2
IN
OUT
MOSFET
DRIVER WITH
CURRENT LIMIT
THERMAL
SHUTDOWN
EEPROM
UVLO
GND
BANDGAP
REFERENCE
Figure 2. Simplified Block Diagram
Figure 3. Pin Description
PIN FUNCTION DESCRIPTION
Pin No.
Pin Name Description
SC−70 XDFN6
5 6 OUT Regulated output voltage pin. A small 0.47 mF ceramic capacitor is needed from this pin to
ground to assure stability.
1 2 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected.
2 3 GND Power supply ground.
3 4 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected.
−5 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected.
4 1 IN Input pin. A small capacitor is needed from this pin to ground to assure stability.
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ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Input Voltage (Note 1) VIN −0.3 to 24 V
Output Voltage VOUT −0.3 to 6 V
Output Short Circuit Duration tSC Indefinite s
Maximum Junction Temperature TJ(MAX) 150 °C
Operating Ambient Temperature Range TA−40 to 125 °C
Storage Temperature Range TSTG −55 to 150 °C
Moisture Sensitivity Level MSL MSL1 −
ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V
ESD Capability, Machine Model (Note 2) ESDMM 200 V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Machine Model tested per EIA/JESD22−A115
ESD Charged Device Model tested per EIA/JESD22−C101E
Latch up Current Maximum Rating tested per JEDEC standard: JESD78.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Characteristics, SC−70 (Note 3)
Thermal Resistance, Junction−to−Air (Note 4)
RqJA 390 °C/W
Thermal Characteristics, XDFN6 (Note 3)
Thermal Resistance, Junction−to−Air (Note 4)
RqJA 260 °C/W
3. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
4. As measured using a copper heat spreading area of 650 mm2, 1 oz copper thickness.
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Min Max Unit
Input Voltage VIN 2.5 24 V
Junction Temperature TJ−40 125 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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ELECTRICAL CHARACTERISTICS − Voltage Version 1.2 V
−40°C ≤ TJ ≤ 125°C; VIN = 2.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 7)
Parameter Test Conditions Symbol Min Typ Max Unit
Operating Input Voltage IOUT ≤ 10 mA VIN 2.5 24 V
10 mA< IOUT < 50 mA 3.0 24
Output Voltage Accuracy 3.0 V < VIN < 24 V, 0 mA < IOUT < 50 mA VOUT 1.164 1.2 1.236 V
Line Regulation 2.5 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 2 10 mV
Load Regulation IOUT = 0 mA to 50 mA RegLOAD 5 10 mV
Dropout Voltage (Note 5) VDO −mV
Maximum Output Current (Note 8) IOUT 100 200 mA
0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 5.8
Power Supply Rejection Ratio VIN = 3.0 V, VOUT = 1.2 V
VPP = 200 mV modulation
IOUT = 1 mA, COUT= 10 mF
f = 100 kHz PSRR 60 dB
Output Noise Voltage VOUT = 1.2 V, IOUT = 50 mA
f = 200 Hz to 100 kHz, COUT = 10 mF
VN65 mVrms
Thermal Shutdown Temperature
(Note 6)
Temperature increasing from TJ = +25°C TSD 170 °C
Thermal Shutdown Hysteresis (Note 6) Temperature falling from TSD TSDH −15 −°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Not Characterized at VIN = 3.0 V, VOUT = 1.2 V, IOUT = 50 mA.
6. Guaranteed by design and characterization.
7. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
8. Respect SOA.
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ELECTRICAL CHARACTERISTICS − Voltage Version 1.5 V
−40°C ≤ TJ ≤ 125°C; VIN = 2.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 11)
Parameter Test Conditions Symbol Min Typ Max Unit
Operating Input Voltage IOUT ≤ 10 mA VIN 2.5 24 V
10 mA < IOUT < 50 mA 3.0 24
Output Voltage Accuracy 3.0 V < VIN < 24 V, 0 < IOUT < 50 mA VOUT 1.455 1.5 1.545 V
Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 2 10 mV
Load Regulation IOUT = 0 mA to 50 mA RegLOAD 5 10 mV
Dropout Voltage (Note 9) VDO −mV
Maximum Output Current (Note 12) IOUT 100 200 mA
Ground Current 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 5.8 mA
Power Supply Rejection Ratio VIN = 3.0 V, VOUT = 1.5 V
VPP = 200 mV modulation
IOUT = 1 mA, COUT = 10 mF
f = 100 kHz PSRR 56 dB
Output Noise Voltage VOUT = 1.5 V, IOUT = 50 mA
f = 200 Hz to 100 kHz, COUT = 10 mF
VN75 mVrms
Thermal Shutdown Temperature
(Note 10)
Temperature increasing from TJ = +25°C TSD 170 °C
Thermal Shutdown Hysteresis
(Note 10)
Temperature falling from TSD TSDH −15 −°C
9. Not Characterized at VIN = 3.0 V, VOUT = 1.5 V, IOUT = 50 mA.
10.Guaranteed by design and characterization.
11. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at
TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
12.Respect SOA.
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ELECTRICAL CHARACTERISTICS − Voltage Version 1.8 V
−40°C ≤ TJ ≤ 125°C; VIN = 2.8V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 15)
Parameter Test Conditions Symbol Min Typ Max Unit
Operating Input Voltage IOUT ≤10 mA VIN 2.8 24 V
10 mA < IOUT < 50 mA 3.0 24
Output Voltage Accuracy 3.0 V < VIN < 24 V, 0 < IOUT < 10 mA VOUT 1.746 1.8 1.854 V
Line Regulation 3 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 2 10 mV
Load Regulation IOUT = 0 mA to 50 mA RegLOAD 5 10 mV
Dropout Voltage (Note 13) VDO mV
Maximum Output Current (Note 16) IOUT 100 200 mA
Ground Current 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 5.8 mA
Power Supply Rejection Ratio VIN = 3.0 V, VOUT = 1.8 V
VPP = 200 mV modulation
IOUT = 1 mA, COUT =10 mF
f = 100 kHz PSRR 60 dB
Output Noise Voltage VOUT = 1.8 V, IOUT = 50 mA
f = 200 Hz to 100 kHz, COUT = 10 mF
VN95 mVrms
Thermal Shutdown Temperature
(Note 14)
Temperature increasing from TJ = +25°C TSD 170 °C
Thermal Shutdown Hysteresis
(Note 14)
Temperature falling from TSD TSDH −15 −°C
13.Not characterized at VIN = 3.0 V, VOUT = 1.8 V, IOUT = 50 mA
14.Guaranteed by design and characterization.
15.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
16.Respect SOA.
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ELECTRICAL CHARACTERISTICS − Voltage Version 2.1 V
−40°C ≤ TJ ≤ 125°C; VIN = 3.1V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 19)
Parameter Test Conditions Symbol Min Typ Max Unit
Operating Input Voltage 0 < IOUT < 50 mA VIN 3.1 24 V
Output Voltage Accuracy 3.1 V < VIN < 24 V, 0 < IOUT < 50 mA VOUT 2.058 2.1 2.142 V
Line Regulation 3.1 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 3 45 mV
3.3 V ≤ VIN ≤ 24 V, IOUT = 1 mA 3 10
Load Regulation IOUT = 0 mA to 50 mA RegLOAD 10 15 mV
Dropout Voltage (Note 17) VDO mV
Maximum Output Current (Note 20) IOUT 100 200 mA
Ground Current 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 5.8 mA
Power Supply Rejection Ratio VIN = 3.1 V, VOUT = 2.1 V
VPP = 200 mV modulation
IOUT = 1 mA, COUT =10 mF
f = 100 kHz PSRR 60 dB
Output Noise Voltage VOUT = 2.1 V, IOUT = 50 mA
f = 200 Hz to 100 kHz, COUT = 10 mF
VN105 mVrms
Thermal Shutdown Temperature
(Note 18)
Temperature increasing from TJ = +25°C TSD 170 °C
Thermal Shutdown Hysteresis
(Note 18)
Temperature falling from TSD TSDH −15 −°C
17.Not characterized at VIN = 3.1 V, VOUT = 2.1 V, IOUT = 50 mA
18.Guaranteed by design and characterization.
19.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
20.Respect SOA.
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ELECTRICAL CHARACTERISTICS − Voltage Version 2.5 V
−40°C ≤ TJ ≤ 125°C; VIN = 3.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 23)
Parameter Test Conditions Symbol Min Typ Max Unit
Operating Input Voltage 0 < IOUT < 50 mA VIN 3.5 24 V
Output Voltage Accuracy 3.5 V < VIN < 24 V, 0 < IOUT < 50 mA VOUT 2.45 2.5 2.55 V
Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 3 10 mV
Load Regulation IOUT = 0 mA to 50 mA RegLOAD 10 15 mV
Dropout Voltage (Note 21) VDO = VIN – (VOUT(NOM) – 125 mV)
IOUT = 50 mA
VDO 260 450 mV
Maximum Output Current (Note 24) IOUT 100 200 mA
Ground Current 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 5.8 mA
Power Supply Rejection Ratio VIN = 3.5 V, VOUT = 2.5 V
VPP = 200 mV modulation
IOUT = 1 mA, COUT =10 mF
f = 100 kHz PSRR 60 dB
Output Noise Voltage VOUT = 2.5 V, IOUT = 50 mA
f = 200 Hz to 100 kHz, COUT = 10 mF
VN115 mVrms
Thermal Shutdown Temperature
(Note 22)
Temperature increasing from TJ = +25°C TSD 170 °C
Thermal Shutdown Hysteresis
(Note 22)
Temperature falling from TSD TSDH −15 −°C
21.Characterized when VOUT falls 125 mV below the regulated voltage and only for devices with VOUT = 2.5 V.
22.Guaranteed by design and characterization.
23.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at
TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
24.Respect SOA.
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ELECTRICAL CHARACTERISTICS − Voltage Version 3.0 V
−40°C ≤ TJ ≤ 125°C; VIN = 4.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 27)
Parameter Test Conditions Symbol Min Typ Max Unit
Operating Input Voltage 0 < IOUT < 50 mA VIN 4.0 24 V
Output Voltage Accuracy 4.0 V < VIN < 24 V, 0< IOUT < 50 mA VOUT 2.94 3.0 3.06 V
Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 3 10 mV
Load Regulation IOUT = 0 mA to 50 mA RegLOAD 10 15 mV
Dropout voltage (Note 25) VDO = VIN – (VOUT(NOM) – 150 mV)
IOUT = 50 mA
VDO
250
400 mV
Maximum Output Current (Note 28) IOUT 100 200 mA
Ground current 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 5.8 mA
Power Supply Rejection Ratio VIN = 4.0 V, VOUT = 3.0 V
VPP = 100 mV modulation
IOUT = 1 mA, COUT = 10 mF
f = 100 kHz PSRR 60 dB
Output Noise Voltage VOUT = 3 V, IOUT = 50 mA,
f = 200 Hz to 100 kHz, COUT = 10 mF
VN135 mVrms
Thermal Shutdown Temperature
(Note 26)
Temperature increasing from TJ = +25°C TSD 170 °C
Thermal Shutdown Hysteresis
(Note 26)
Temperature falling from TSD TSDH - 25 - °C
25.Characterized when VOUT falls 150 mV below the regulated voltage and only for devices with VOUT = 3.0 V
26.Guaranteed by design and characterization.
27.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested
at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as
possible.
28.Respect SOA
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ELECTRICAL CHARACTERISTICS − Voltage Version 3.3 V
−40°C ≤ TJ ≤ 125°C; VIN = 4.3 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 31)
Parameter Test Conditions Symbol Min Typ Max Unit
Operating Input Voltage 0 < IOUT < 50 mA VIN 4.3 24 V
Output Voltage Accuracy 4.3 V < VIN < 24 V, 0 < IOUT < 50 mA VOUT 3.234 3.3 3.366 V
Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 3 10 mV
Load Regulation IOUT = 0 mA to 50 mA RegLOAD 10 15 mV
Dropout Voltage (Note 29) VDO = VIN – (VOUT(NOM) – 165 mV)
IOUT = 50 mA
VDO 230 350 mV
Maximum Output Current (Note 32) IOUT 100 200 mA
Ground Current 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 5.8 mA
Power Supply Rejection Ratio VIN = 4.3 V, VOUT = 3.3 V
VPP = 200 mV modulation
IOUT = 1 mA, COUT =10 mF
f = 100 kHz PSRR 60 dB
Output Noise Voltage VOUT = 4.3 V, IOUT = 50 mA
f = 200 Hz to 100 kHz, COUT = 10 mF
VN140 mVrms
Thermal Shutdown Temperature
(Note 30)
Temperature increasing from TJ = +25°C TSD 170 °C
Thermal Shutdown Hysteresis
(Note 30)
Temperature falling from TSD TSDH −15 −°C
29.Characterized when VOUT falls 165 mV below the regulated voltage and only for devices with VOUT = 3.3 V.
30.Guaranteed by design and characterization.
31.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
32.Respect SOA.
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ELECTRICAL CHARACTERISTICS − Voltage Version 5.0 V
−40°C ≤ TJ ≤ 125°C; VIN = 6.0 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 35)
Parameter Test Conditions Symbol Min Typ Max Unit
Operating Input Voltage 0 < IOUT < 50 mA VIN 6.0 24 V
Output Voltage Accuracy 6.0V < VIN < 24V, 0< IOUT < 50 mA VOUT 4.9 5.0 5.1 V
Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, Iout = 1mA RegLINE 3 10 mV
Load Regulation IOUT = 0 mA to 50 mA RegLOAD 10 20 mV
Dropout Voltage (Note 33) VDO = VIN – (VOUT(NOM) – 250 mV)
IOUT = 50 mA
VDO 230 350 mV
Maximum Output Current (Note 36) IOUT 90 200 mA
Ground Current 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 5.8 mA
Power Supply Rejection Ratio VIN = 6.0 V, VOUT = 5.0 V
VPP = 200 mV modulation
IOUT = 1 mA, COUT =10 mF
f = 100 kHz PSRR 56 dB
Output Noise Voltage VOUT = 5.0 V, IOUT = 50 mA
f = 200 Hz to 100 kHz, COUT = 10 mF
VN190 mVrms
Thermal Shutdown Temperature
(Note 34)
Temperature increasing from TJ = +25°C TSD 170 °C
Thermal Shutdown Hysteresis
(Note 34)
Temperature falling from TSD TSDH −15 −°C
33.Characterized when VOUT falls 250 mV below the regulated voltage and only for devices with VOUT = 5.0 V.
34.Guaranteed by design and characterization.
35.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
36.Respect SOA.
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NCV8715
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2.472
2.476
2.480
2.484
2.488
2.492
2.496
2.500
2.504
0 1020304050
1.172
1.176
1.180
1.184
1.188
1.192
1.196
1.200
1.204
0 1020304050
VIN = 3.5 V
VIN = 5.0 V
VIN = 10 V
VIN = 15 V
VIN = 20 V
VIN = 24 V
4.98
4.985
4.99
4.995
5
5.005
5.01
5.015
5.02
−40 −20 0 20 40 60 80 100 120
Figure 4. Output Voltage vs. Temperature Figure 5. Output Voltage vs. Temperature
Figure 6. Output Voltage vs. Temperature Figure 7. Output Voltage vs. Temperature
Figure 8. Output Voltage vs. Output Current Figure 9. Output Voltage vs. Output Current
1.2
−40 −20 0 12010020 40 60 80
TEMPERATURE (°C)
OUTPUT VOLTAGE (V)
VIN = 3.0 V
NCV8715x12xxx
CIN = COUT = 1 mF
IOUT = 1 mA
TEMPERATURE (°C)
OUTPUT VOLTAGE (V)
2.506
−40 −20 0 12010020 40 60 80
3.318
−40 −20 0 12010020 40 60 80
TEMPERATURE (°C)
OUTPUT VOLTAGE (V)
JUNCTION TEMPERATURE (°C)
OUTPUT VOLTAGE (V)
OUTPUT CURRENT (mA)
OUTPUT VOLTAGE (V)
OUTPUT CURRENT (mA)
OUTPUT VOLTAGE (V)
VIN = (5.0 − 24.0) V
1.199
1.198
1.197
1.196
1.195
1.194
1.193
1.192
VIN = 3.0 V
VIN = (5.0 − 24.0) V
2.504
2.502
2.5
2.498
2.496
2.494
2.492
2.49
NCV8715x25xxx
CIN = COUT = 1 mF
IOUT = 1 mA
3.315
3.312
3.309
3.306
3.303
3.3
3.297
3.294
NCV8715x33xxx
CIN = COUT = 1 mF
IOUT = 1 mA
VIN = 4.3 V to 24 V
NCV8715x50xxx
CIN = COUT = 1 mF
IOUT = 1 mA
VIN = 6.0 V
VIN = (8.0 − 24.0) V
NCV8715x12xxx
CIN = COUT = 1 mF
TA = 25°C
VIN = 3.0 V
VIN = 5.0 V
VIN = 10 V
VIN = 15 V
VIN = 20 V
VIN = 24 V
NCV8715x25xxx
CIN = COUT = 1 mF
TA = 25°C
www.0nse ‘ ‘ ‘ TA : ficr 1 : 125°C T : 25 C A A// TA : 25C / / / / TA , / / // / TA : 4 / : 125°C A : 25lC/‘ / /// // ///// TA : //
NCV8715
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4.952
4.960
4.968
4.976
4.984
4.992
5.000
5.008
5.016
0 1020304050
Figure 10. Output Voltage vs. Output Current Figure 11. Output Voltage vs. Output Current
OUTPUT CURRENT (mA)
OUTPUT VOLTAGE (V)
OUTPUT CURRENT (mA)
OUTPUT VOLTAGE (V)
3.280
3.284
3.288
3.292
3.296
3.300
3.304
3.308
3.312
0 1020304050
VIN = 4.3 V
VIN = 15 V
VIN = 20 V
VIN = 24 V
NCV8715x33xxx
CIN = COUT = 1 mF
TA = 25°C
VIN = 10 V VIN = 6.0 V
VIN = 15 V
VIN = 20 V
VIN = 24 V
VIN = 10 V
NCV8715x50xxx
CIN = COUT = 1 mF
TA = 25°C
0
50
100
150
200
250
300
350
400
0 1020304050
Figure 12. Dropout Voltage vs. Output Current
OUTPUT CURRENT (mA)
DROPOUT VOLTAGE (mV)
TA = 125°C
TA = 25°C
TA = −40°C
NCV8715x25xxx
CIN = COUT = 1 mF
0
50
100
150
200
250
300
350
400
0 1020304050
Figure 13. Dropout Voltage vs. Output Current
OUTPUT CURRENT (mA)
DROPOUT VOLTAGE (mV)
NCV8715x33xxx
CIN = COUT = 1 mF
TA = 125°C
TA = 25°C
TA = −40°C
0
50
100
150
200
250
300
350
400
0 1020304050
Figure 14. Dropout Voltage vs. Output Current
OUTPUT CURRENT (mA)
DROPOUT VOLTAGE (mV)
TA = 125°C
TA = 25°C
TA = −40°C
NCV8715x50xxx
CIN = COUT = 1 mF
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25
IOUT = 0
IOUT = 50 mA
Figure 15. Ground Current vs. Input Voltage
INPUT VOLTAGE (V)
GND, QUIESCENT CURRENT (mA)
NCV8715x12xxx
CIN = COUT = 1 mF
TA = 25°C
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0
5
10
15
20
25
30
35
40
0 5 10 15 20 25
Figure 16. Ground Current vs. Input Voltage Figure 17. Ground Current vs. Input Voltage
INPUT VOLTAGE (V)
GND, QUIESCENT CURRENT (mA)
INPUT VOLTAGE (V)
GND, QUIESCENT CURRENT (mA)
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25
IOUT = 0
IOUT = 50 mA
NCV8715x25xxx
CIN = COUT = 1 mF
TA = 25°C
IOUT = 0
IOUT = 50 mA
NCV8715x33xxx
CIN = COUT = 1 mF
TA = 25°C
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25
Figure 18. Ground Current vs. Input Voltage
INPUT VOLTAGE (V)
GND, QUIESCENT CURRENT (mA)
IOUT = 0
IOUT = 50 mA
NCV8715x50xxx
CIN = COUT = 1 mF
TA = 25°C
2.5
2.8
3.0
3.3
3.5
3.8
4.0
4.3
4.5
−40 −20 0 20 40 60 80 100 120
Figure 19. Quiescent Current vs. Temperature
TEMPERATURE (°C)
QUIESCENT CURRENT (mA)
VIN = 3 V
VIN = 24 V
NCV8715x12xxx
CIN = COUT = 1 mF
IOUT = 0
VIN = 10 V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Figure 20. Quiescent Current vs. Temperature
TEMPERATURE (°C)
QUIESCENT CURRENT (mA)
−40 −20 0 20 40 60 80 100 120
VIN = 3.5 V
VIN = 24 V
NCV8715x25xxx
CIN = COUT = 1 mF
IOUT = 0
VIN = 10 V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Figure 21. Quiescent Current vs. Temperature
TEMPERATURE (°C)
QUIESCENT CURRENT (mA)
−40 −20 0 20 40 60 80 100 120
VIN = 4.3 V
VIN = 24 V
NCV8715x33xxx
CIN = COUT = 1 mF
IOUT = 0
VIN = 10 V
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2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Figure 22. Quiescent Current vs. Temperature
TEMPERATURE (°C)
QUIESCENT CURRENT (mA)
−40 −20 0 20 40 60 80 100 120
VIN = 6 V
VIN = 24 V
NCV8715x50xxx
CIN = COUT = 1 mF
IOUT = 0
VIN = 10 V
Figure 23. PSRR vs. Frequency
FREQUENCY (kHz)
PSRR (dB)
0
20
40
60
80
100
0.1 1 10 100 1000
NCV8715x12xxx
COUT = 10 mF
VIN = 3.0 V + 200 mVPP Modulation
TA = 25°C
IOUT = 1 mA
IOUT = 10 mA
IOUT = 50 mA
0
20
40
60
80
100
0.1 1 10 100 1000
Figure 24. PSRR vs. Frequency
FREQUENCY (kHz)
PSRR (dB)
IOUT = 1 mA
IOUT = 10 mA
IOUT = 50 mA
NCV8715x25xxx
COUT = 10 mF
VIN = 3.5 V + 200 mVPP Modulation
TA = 25°C
0
20
40
60
80
100
0.1 1 10 100 1000
PSRR (dB)
Figure 25. PSRR vs. Frequency
FREQUENCY (kHz)
IOUT = 1 mA
IOUT = 10 mA
IOUT = 50 mA
NCV8715x33xxx
COUT = 10 mF
VIN = 4.3 V + 200 mVPP Modulation
TA = 25°C
0
20
40
60
80
100
0.1 1 10 100 1000
Figure 26. PSRR vs. Frequency
FREQUENCY (kHz)
PSRR (dB)
NCV8715x50xxx
COUT = 10 mF
VIN = 6.0 V + 200 mVPP Modulation
TA = 25°C
IOUT = 1 mA
IOUT = 10 mA
IOUT = 50 mA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01 0.1 1 10 100 1000
OUTPUT VOLTAGE NOISE (mV/√Hz)
Figure 27. Output Spectral Noise Density vs.
Frequency
FREQUENCY (kHz)
COUT = 10 mF, 65.1 mVrms @ 200 Hz − 100 kHz
COUT = 2.2 mF, 111.5 mVrms @ 200 Hz − 100 kHz
COUT = 1.0 mF, 172.1 mVrms @ 200 Hz − 100 kHz
COUT = 0.47 mF, 208 mVrms @ 200 Hz − 100 kHz
COUT = 4.7 mF, 80.5 mVrms @ 200 Hz − 100 kHz
NCV8715x12xxx
IOUT = 50 mA
TA = 25°C
VIN = 3 V
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0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01 0.1 1 10 100 1000
OUTPUT VOLTAGE NOISE (mV/√Hz)
Figure 28. Output Spectral Noise Density vs.
Frequency
FREQUENCY (kHz)
COUT = 10 mF, 114.7 mVrms @ 200 Hz − 100 kHz
COUT = 2.2 mF, 152.2 mVrms @ 200 Hz − 100 kHz
COUT = 1.0 mF, 172.1 mVrms @ 200 Hz − 100 kHz
COUT = 0.47 mF, 203.6 mVrms @ 200 Hz − 100 kHz
COUT = 4.7 mF, 128.4 mVrms @ 200 Hz − 100 kHz
NCV8715x25xxx
IOUT = 50 mA
TA = 25°C
VIN = 3.5 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.01 0.1 1 10 100 1000
OUTPUT VOLTAGE NOISE (mV/√Hz)
Figure 29. Output Spectral Noise Density vs.
Frequency
FREQUENCY (kHz)
COUT = 10 mF, 137.1 mVrms @ 200 Hz − 100 kHz
COUT = 2.2 mF, 170.6 mVrms @ 200 Hz − 100 kHz
COUT = 1.0 mF, 220.8 mVrms @ 200 Hz − 100 kHz
COUT = 0.47 mF, 271.1 mVrms @ 200 Hz − 100 kHz
COUT = 4.7 mF, 145.7 mVrms @ 200 Hz − 100 kHz
NCV8715x33xxx
IOUT = 50 mA
TA = 25°C
VIN = 4.3 V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.01 0.1 1 10 100 1000
OUTPUT VOLTAGE NOISE (mV/√Hz)
Figure 30. Output Spectral Noise Density vs.
Frequency
FREQUENCY (kHz)
COUT = 10 mF, 186.1 mVrms @ 200 Hz − 100 kHz
COUT = 2.2 mF, 207.6 mVrms @ 200 Hz − 100 kHz
COUT = 1.0 mF, 244.5 mVrms @ 200 Hz − 100 kHz
COUT = 0.47 mF, 305.0 mVrms @ 200 Hz − 100 kHz
COUT = 4.7 mF, 189.41 mVrms @ 200 Hz − 100 kHz
NCV8715x50xxx
IOUT = 50 mA
TA = 25°C
VIN = 6.0 V
Figure 31. Line Transient Response
Figure 32. Line Transient Response Figure 33. Line Transient Response
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Figure 34. Load Transient Response Figure 35. Load Transient Response
Figure 36. Load Transient Response Figure 37. Input Voltage Turn−On Response
Figure 38. Input Voltage Turn−On Response Figure 39. Input Voltage Turn−On Response
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APPLICATIONS INFORMATION
The NCV8715 is the member of new family of Wide Input
Voltage Range Low Dropout Regulators which delivers
Ultra Low Ground Current consumption, Good Noise and
Power Supply Rejection Ratio Performance.
Input Decoupling (CIN)
It is recommended to connect at least 0.1 mF Ceramic X5R
or X7R capacitor between IN and GND pin of the device.
This capacitor will provide a low impedance path for any
unwanted AC signals or Noise superimposed onto constant
Input Voltage. The good input capacitor will limit the
influence of input trace inductances and source resistance
during sudden load current changes.
Higher capacitance and lower ESR Capacitors will
improve the overall line transient response.
Output Decoupling (COUT)
The NCV8715 does not require a minimum Equivalent
Series Resistance (ESR) for the output capacitor. The device
is designed to be stable with standard ceramics capacitors
with values of 0.47 mF or greater up to 10 mF. The X5R and
X7R types have the lowest capacitance variations over
temperature thus they are recommended.
Power Dissipation and Heat sinking
The maximum power dissipation supported by the device
is dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part. The maximum power dissipation the
NCV8715 can handle is given by:
PD(MAX) +ƪTJ(MAX) *TAƫ
RqJA
(eq. 1)
The power dissipated by the NCV8715 for given
application conditions can be calculated from the following
equations:
PD[VINǒIGNDǒIOUTǓǓ)IOUTǒVIN *VOUTǓ(eq. 2)
or
VIN(MAX) [
PD(MAX) )ǒVOUT IOUTǓ
IOUT )IGND
(eq. 3)
For reliable operation, junction temperature should be
limited to +125°C maximum.
Hints
VIN and GND printed circuit board traces should be as
wide as possible. When the impedance of these traces is
high, there is a chance to pick up noise or cause the regulator
to malfunction. Place external components, especially the
output capacitor, as close as possible to the NCV8715, and
make traces as short as possible.
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ORDERING INFORMATION
Device
Nominal Output
Voltage Marking Package Shipping†
NCV8715SQ12T2G 1.2 V V5A
SC−88A/SC−70
(Pb−Free)*
3000 / Tape & Reel
NCV8715SQ15T2G 1.5 V V5C
NCV8715SQ18T2G 1.8 V V5D
NCV8715SQ21T2G 2.1 V V5J
NCV8715SQ25T2G 2.5 V V5E
NCV8715SQ30T2G 3.0 V V5F
NCV8715SQ33T2G 3.3 V V5G
NCV8715SQ50T2G 5.0 V V5H
NCV8715MX12TBG 1.2 V VA
XDFN6
(Pb−Free)*
NCV8715MX15TBG 1.5 V VC
NCV8715MX18TBG 1.8 V VE
NCV8715MX25TBG 2.5 V VE
NCV8715MX30TBG 3.0 V VF
NCV8715MX33TBG 3.3 V VG
NCV8715MX50TBG 5.0 V VH
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
pm on: 7V 7 7 7 * E / sED Cu ' 4 Egg 2x Elm c TOP VIEW new“: I ¥ 4 W 7 ,l:|_4\:/|\_|:|= I [H‘Kj fig , fifi [ <—‘ ii="" 4mm“="" ‘="" ‘4="" “pmo="" a)="" w="" \="" bottom="" view="" 0="">
NCV8715
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20
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.10 AND 0.20mm FROM TERMINAL TIP.
C
A
SEATING
PLANE
D
E
0.10 C
A3
A1
2X
2X 0.10 C
XDFN6 1.5x1.5, 0.5P
CASE 711AE
ISSUE B
DIM
A
MIN MAX
MILLIMETERS
0.35 0.45
A1 0.00 0.05
A3 0.13 REF
b0.20 0.30
D
E
e
L
PIN ONE
REFERENCE
0.05 C
0.05 C
A0.10 C
NOTE 3
L2
e
b
B
3
6
6X
1
4
0.05 C
MOUNTING FOOTPRINT*
L1
1.50 BSC
1.50 BSC
0.50 BSC
0.40 0.60
--- 0.15
BOTTOM VIEW
L
5X
DIMENSIONS: MILLIMETERS
0.73
6X 0.35
5X
1.80
0.50
PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
L1
DETAIL A
L
ALTERNATE TERMINAL
CONSTRUCTIONS
DETAIL B
MOLD CMPDEXPOSED Cu
ALTERNATE
CONSTRUCTIONS
DETAIL B
DETAIL A
L2 0.50 0.70
TOP VIEW
B
SIDE VIEW RECOMMENDED
0.83
A
NCV8715
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21
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
DIM
A
MIN MAX MIN MAX
MILLIMETERS
1.80 2.200.071 0.087
INCHES
B1.15 1.350.045 0.053
C0.80 1.100.031 0.043
D0.10 0.300.004 0.012
G0.65 BSC0.026 BSC
H--- 0.10---0.004
J0.10 0.250.004 0.010
K0.10 0.300.004 0.012
N0.20 REF0.008 REF
S2.00 2.200.079 0.087
B0.2 (0.008) MM
12 3
45
A
G
S
D 5 PL
H
C
N
J
K
−B−
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
ǒmm
inchesǓ
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
SOLDER FOOTPRINT*
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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