IXG(H,T)20N100 Datasheet by IXYS

':I IXYS
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© 2000 IXYS All rights reserved
IGBT VCES = 1000 V
IC25 = 40 A
VCE(sat) = 3.0 V
tfi(typ) = 280 ns
IXGH 20N100
IXGT 20N100
G = Gate, C = Collector,
E = Emitter, TAB = Collector
GCE
TO-247 AD (IXGH)
Features
• International standard packages
JEDEC TO-268 surface and
JEDEC TO-247 AD
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• Capacitor discharge
Advantages
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw,
(isolated mounting screw hole)
98620B (7/00)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 1 mA, VGE = 0 V 1000 V
VGE(th) IC= 250 mA, VCE = VGE 2.5 5 V
ICES VCE = VCES TJ = 25°C 250 mA
VGE = 0 V TJ = 125°C1mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V 2.2 3.0 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1000 V
VCGR TJ= 25°C to 150°C; RGE = 1 MW1000 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C40A
IC90 TC= 90°C20A
ICM TC= 25°C, 1 ms 80 A
SSOA VGE= 15 V, TVJ = 125°C, RG = 47 W ICM = 40 A
(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 VCES
PCTC= 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum Lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260 °C
MdMounting torque (M3) 1.13/10 Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
TO-268
(IXGT)
GE
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
C (TAB)
Preliminary data
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© 2000 IXYS All rights reserved
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 12 16 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
IC(ON) VGE = 10V, VCE = 10V 90 A
Cies 1750 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 100 pF
Cres 38 pF
Qg73 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 13 nC
Qgc 26 nC
td(on) 30 ns
tri 30 ns
td(off) 350 700 ns
tfi 280 700 ns
Eoff 3.5 8.0 mJ
td(on) 30 ns
tri 30 ns
Eon 0.65 mJ
td(off) 700 ns
tfi 520 ns
Eoff 6.5 mJ
RthJC 0.83 K/W
RthCK (TO-247) 0.25 K/W
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 47 W
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 47 W
IXGH 20N100
IXGT 20N100
TO-247 AD (IXGH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
TO-268AA (D3 PAK)
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS A Lillelluse Technumgy
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