IXDR30N120(D1) Datasheet by IXYS

IXDH 30N120
© 2019 IXYS All rights reserved 1 - 3
IXYS reserves the right to change limits, test conditions and dimensions. 20190131a
phase-out
Symbol Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 1200 V
VCGR TJ = 25°C to 150°C; RGE = 20 kΩ 1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C 60 A
IC90 TC = 90°C 38 A
ICM TC = 90°C; tp = 1 ms 76 A
RBSOA VGE = ±15 V; TJ = 125°C; RG = 47 Ω ICM = 50 A
Clamped inductive load; L = 30 µH VCEK < VCES
tSC VGE = ±15 V; VCE = VCES; TJ = 125°C 10 µs
(SCSOA) RG = 47 Ω, non repetitive
PC TC = 25°C; IGBT 300 W
Diode 135 W
TJ -55 ... +150 °C
Tstg -40 ... +150 °C
Md Mounting torque 1.1/10 Nm/lb.in.
Weight 6 g
VCES = 1200 V
IC25 = 60 A
VCE(sat) typ = 2.4 V
Features
• NPT IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coeffi cient for
easy paralleling
• MOS input, voltage controlled
• optional ultra fast diode
• International standard packages
Advantages
• Space savings
• High power density
• IXDT:
surface mountable high power package
Typical Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninteruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specifi ed)
min. typ. max.
V(BR)CES VGE = 0 V 1200 V
VGE(th) IC = 1 mA; VCE = VGE 4.5 6.5 V
ICES VCE = VCES; TJ = 25°C 1.5 mA
TJ = 125°C 2.5 mA
IGES VCE = 0 V; VGE = ± 20 V ± 500 nA
VCE(sat) IC = 30 A; VGE = 15 V 2.4 2.9 V
TO-247 AD
G
E
CC (TAB)
G = Gate, E = Emitter
C = Collector , TAB = Collector
G
C
E
Type Replacements
IXDH30N120 IXDH30N120D1
IXA33IF1200HB
L'I IXYS
IXDH 30N120
© 2019 IXYS All rights reserved 2 - 3
IXYS reserves the right to change limits, test conditions and dimensions. 20190131a
phase-out
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specifi ed)
min. typ. max.
Cies 1650 pF
Coes VCE = 25 V; VGE = 0 V; f = 1 MHz 250 pF
Cres 110 pF
Qg IC = 30 A; VGE = 15 V; VCE = 0.5 VCES 120 nC
td(on) 100 ns
tr 70 ns
td(off) 500 ns
tf 70 ns
Eon 4.6 mJ
Eoff 3.4 mJ
RthJC 0.42 K/W
RthCK Package with heatsink compound 0.25 K/W
Inductive load, TJ = 125°C
IC = 30 A; VGE = ±15 V;
VCE = 600 V; RG = 47 Ω
TO-247 AD Outline
Reverse Diode (FRED) [D1 version only] Characteristic Values
(TJ = 25°C, unless otherwise specifi ed)
Symbol Conditions min. typ. max.
VF IF = 30 A; VGE = 0 V 2.5 2.7 V
IF = 30 A; VGE = 0 V; TJ = 125°C 2.0 V
IF TC = 25°C 60 A
TC = 90°C 35 A
IRM IF = 30 A; -diF/dt = 400 A/µs; VR = 600 V 20 A
trr VGE = 0 V; TJ = 125°C 200 ns
trr IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V; VGE = 0 V 40 ns
RthJC 1 K/W
S
Ø P Ø P1 D2
D1
E1
4
1 2 3
L
L1
2x b2
3x b
e
2x E2
D
E
Q
AA2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.430 BSC 10.92 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
IXDH 30N120
© 2019 IXYS All rights reserved 3 - 3
IXYS reserves the right to change limits, test conditions and dimensions. 20190131a
phase-out
0 200 400 600 800 1000
0
20
40
60
0
100
200
300
0 1 2 3 4
0
10
20
30
40
50
60
70
80
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
50
60
0 20 40 60 80 100 120 140
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
10
20
30
40
50
60
13V
11V
TJ = 25°C VGE=17V
TJ = 125°C
VCE = 600V
IC = 25A
15V
5 6 7 8 9 10 11
0
10
20
30
40
50
60
13V
11V
VGE=17V
15V
VCE = 20V
TJ = 25°C
9V
9V
VCE
V
A
IC
VCE
A
IC
V
V
V
VGE VF
A
IC
A
IF
nC
QG-di/dt
V
VGE
A
IRM trr
ns
A/µs
IXDH30N120
TJ = 125°C
VR = 600V
IF = 30A
TJ = 25°C
TJ = 125°C
IRM
trr
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
\\
IXDH 30N120
© 2019 IXYS All rights reserved 4 - 3
IXYS reserves the right to change limits, test conditions and dimensions. 20190131a
phase-out
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
0 10 20 30 40 50
0
2
4
6
8
10
12
14
0
20
40
60
80
100
120
140
0 10 20 30 40 50
0
1
2
3
4
5
6
0
100
200
300
400
500
600
0.00001 0.0001 0.001 0.01 0.1 1
0.0001
0.001
0.01
0.1
1
10
0 40 80 120 160 200 240
0
1
2
3
4
5
0
300
600
900
1200
1500
0 40 80 120 160 200 240
0
2
4
6
8
10
12
0
60
120
180
240
single pulse
VCE = 600V
VGE = ±15V
RG = 47Ω
TJ = 125°C
IXDH30N120
VCE = 600V
VGE = ±15V
IC = 25A
TJ = 125°C
0 200 400 600 800 1000 1200
0
10
20
30
40
50
60
RG = 47Ω
TJ = 125°C
VCEK < VCES
VCE = 600V
VGE = ±15V
RG = 47Ω
TJ = 125°C
Eon
VCE = 600V
VGE = ±15V
IC = 25A
TJ = 125°C
td(on)
tr
Eoff
td(off)
tf
Eon
td(on)
tr
Eoff
td(off)
tf
IC
A
IC
A
Eoff
Eon tt
RG
Ω
RG
Ω
VCE t
s
mJ
Eon
mJ
Eoff
ns
t
ns
t
ICM
K/W
ZthJC IGBT
diode
V
A
mJ ns ns
mJ