SCT825B Datasheet by SMC Diode Solutions

*SMIE DlDDE SDLuTluNS RuHS ® 123 TO-ZZOB(Non-lnsj Description With high ability to withstand the shock loading of large current, SCRs provide high dvldt rate with strong resistance Characteristics Condition RMS cnrstate current Non repetitive surge peak cnrstate current :lOms Critical rate of rise of cnrstate current l :2><| .china="" -="" germany="" —="" korea="" -="" singapore="" -="" united="" states-="">
Technical Data
Data Sheet N2037, Rev.-
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SCT825B
SCT825B 25A SCRs
TO-251-4R
A(2) K(1)
G(3)
TO-220B
Non-Insulated
TO-220A
Insulated
TO-220F
Insulated
1
11
1
2
22
2
3
3 3
3
TO-252-4R
13
2
TO-263
3
1
2
Circuit Diagram
Description
Maximum Ratings:
Characteristics
Symbol
Condition
Units
Storage junction temperature range
TJ
-
C
Operating junction temperature range
Tstg
-
C
Repetitive peak off-state voltage(Tj=25℃)
VDRM
-
V
Repetitive peak reverse voltage(Tj=25℃)
VRRM
-
V
Non repetitive surge peak Off-state voltage
VDSM
-
V
Non repetitive peak reverse voltage
VRSM
-
V
RMS on-state current
I(TRMS)
TO-220B(Non-Ins)(TC=100℃)
A
Non repetitive surge peak on-state current
(tp=10ms)
ITSM
-
A
I2t value for fusing (tp=10ms)
I2t
-
A2s
Critical rate of rise of on-state current
(IG=2×IGT)
dI/dt
-
A/μs
Peak gate current
IGM
-
A
Average gate power dissipation
PG(AV)
-
W
Peak gate power
PGM
-
W
With high ability to withstand the shock loading of large current, SCRs provide high dv/dt rate with strong resistance
to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power
charger, T-tools etc.
TO-220B(Non-Ins)
/—\ *SME man: sDLu'HUNs Condiiion RuHS Symbol Condiiion Value Units §CT 825E SMC Diode Solutions; B:T0-2203(Non—Ins) SCRS 81VDRM/V 2 800V |T(RM5):25A Device Package Shipping SCTSZSB TO—220B(Non-ins) .China - Germany - Korea - Singapore - United States-
Technical Data
Data Sheet N2037, Rev.-
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SCT825B
Symbol
Test Condition
Value
Unit
MIN.
TYP.
MAX.
IGT
VD=12V RL=33Ω
-
-
40
mA
VGT
-
-
1.3
V
VGD
VD=VDRM Tj=125℃RL=3.3KΩ
0.2
-
-
V
IL
IG=1.2IGT
-
-
90
mA
IH
IT=500mA
-
-
80
mA
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
200
-
-
V/μs
Electrical Characteristics(Tj=25℃unless otherwise specified)
Static Characteristics
Symbol
Condition
Max.
Units
VTM
IT=50A tp=380μs,Tj=25℃
1.55
V
IDRM
VD=VDRM VR=VRRM, Tj=25℃
10
μA
IRRM
VD=VDRM VR=VRRM, Tj=125℃
4
mA
Thermal Resistances
Symbol
Condition
Value
Units
Rth(j-c)
Junction to case(AC)
TO-220B(Non-Ins)
1.0
℃/W
Ordering Information
Device
Package
Shipping
SCT825B
TO-220B(Non-Ins)
50pcs/ Tube
S CT 8 25 B
SMC Diode Solutions
SCRs
B:TO-220B(Non-Ins)
K:DPAK
8:VDRM/VRRM ≥ 800V
IT(RMS):25A
/—\ *SMIE man: SDLU'HUNS 1 Where xxxxx 15 WWWL ,fifijn SVMBO Millimeters Inches 1:: A 440 4.60 0.173 0.181 B 0 61 0.88 0.024 0.035 C 0 46 0.70 0.018 0.028 C2 1 21 1.32 0.048 0.052 CS 2 40 2.72 0.094 0.107 E 9 60 10 4 0.378 0.409 F 6 20 6.60 0.244 0.260 G 2.54 0.1 L1 3.75 0.14 L2 1 14 1.70 0.045 0.067 L3 2 65 2.95 0.104 0.116 FIG.1: Maximum power dissipation versus RMS FIG.2: RMS on-state current verws case O 25 50 75 100 125 .China - Germany — Korea - Singapore - United States-
Technical Data
Data Sheet N2037, Rev.-
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SCT825B
FIG.3: Surge peak on-state current versus
number of cycles
FIG.1: Maximum power dissipation versus RMS
on-state current
FIG.4: On-state characteristics (maximum
values)
FIG.2: RMS on-state current versus case
temperature
IT(RMS) (A)
P(w)
0 5 10 15 20 25
0IT(RMS) (A) Tc (℃)
00 25 50 75 100 125
1 10 100 1000
Number of cycles
0
50
ITSM (A) ITM (A)
VTM (V)
0 1 2 3 4 5
1
10
20
25
30
100
150
200
6
12
24
30
36
5
10
TO-220B(Non-Ins)
250
300
350
100
18 15
300
Tj=25℃
Tj=125℃
α=180°
One cycle
tp=10ms
Marking Diagram
Mechanical Dimensions TO-220B(Non-Ins)
SYMBO
L
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.40
4.60
0.173
0.181
B
0.61
0.88
0.024
0.035
C
0.46
0.70
0.018
0.028
C2
1.21
1.32
0.048
0.052
C3
2.40
2.72
0.094
0.107
D
8.60
9.70
0.339
0.382
E
9.60
10.4
0.378
0.409
F
6.20
6.60
0.244
0.260
G
2.54
0.1
H
28.0
29.8
1.102
1.173
L1
3.75
0.14
8
L2
1.14
1.70
0.045
0.067
L3
2.65
2.95
0.104
0.116
V1
45°
45°
Ratings and Characteristics Curves
Where XXXXX is YYWWL
SCT825B = Part name
YY = Year
WW = Week
L = Lot Number
man: SDLUT‘UNS RuHS .China - Germany - Korea - Singapore - United States-
Technical Data
Data Sheet N2037, Rev.-
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SCT825B
FIG.3: Surge peak on-state current versus
number of cycles
FIG.1: Maximum power dissipation versus RMS
on-state current
FIG.4: On-state characteristics (maximum
values)
FIG.2: RMS on-state current versus case
temperature
IT(RMS) (A)
P(w)
0 5 10 15 20 25
0IT(RMS) (A) Tc (℃)
00 25 50 75 100 125
1 10 100 1000
Number of cycles
0
50
ITSM (A) ITM (A)
VTM (V)
0 1 2 3 4 5
1
10
20
25
30
100
150
200
6
12
24
30
36
5
10
TO-220B(Non-Ins)
250
300
350
100
18 15
300
Tj=25℃
Tj=125℃
α=180°
One cycle
tp=10ms
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponging value of I t (dI/dt < 50A/μs)
tp(ms)
0.01 0.1 1 10
10
ITSM (A), I t (A s)
-40 -20 0 20 40 60 80 100 120 140
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
0.0
0.5
1.5
2.0
3.0
2
22
1.0
2.5
Tj(℃)
IGT
1000
100
3000
IH&IL
dI/dt
I t
2
ITSM
SM'Ei man: 5DLUT‘DNS HaHS DISCLAIMER: .China - Germany — Korea - Singapore - United States-
Technical Data
Data Sheet N2037, Rev.-
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SCT825B
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of
the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property
claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use
at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
Diode Solutions.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..