TPA2100P1 Datasheet by Texas Instruments

iTEXAs Q INSTRUMENTS m
YZH
1
FEATURES
DESCRIPTION
APPLICATIONS
Vdd SW
IN-
IN+
GND
OUT+
OUT-
VccOUT
VccIN
CIN
CIN
SD
SDa
GAIN
PiezoSpeaker
Digital
BaseBand
Analog
Baseband
or
CODEC
VIN
2.5 Vto
5.5 V
Vref
BST
10nF
10 Fm
4.7 Hm
1 Fm5~10 W
5~10 W
1 Fm
0.1~2 Fm
10 Fm
GND
TPA2100P1
www.ti.com
........................................................................................................................................................................................... SLOS595 – DECEMBER 2008
19-V
PP
Mono Class-D Audio Amplifier for Piezo/Ceramic Speakers
2
19 V
PP
Output Load Voltage From a 2.5 VSupply
The TPA2100P1 (sometimes referred to as TPA2100)is a mono, Class-D audio power amplifier withIntegrated DC-DC Converter Generates 10 V
integrated DC-DC converter designed for piezo andSupply
ceramic speakers. The TPA2100P1 (TPA2100) isNo External Schottky Diode Required
capable of driving a ceramic / piezo speaker withIntegrated Audio Input Low-Pass Filter
19 V
PP
(6.7 V
RMS
) from a 2.5 V power supply at lessthan 1% THD+N.Small Boost Converter InductorSupply Voltage Range From 2.5 V to 5.5 V
The DC-DC converter operates at a fixed frequencyof 1.2 MHz. The TPA2100P1 (TPA2100) DC-DCSelectable Gain of 12 dB, 16 dB, and 24 dB
converter provides a 10 V supply with a minimumIndependent Shutdown Control for the Boost
number of external components. The DC-DCConverter and the Audio Amplifier
converter can be used to drive other components thatFast Startup Time: 8 ms
require a 10 V supply voltage (note: audio signalmust be present for proper functionality of boostLow Supply Current: 5.5 mA
converter).Low Shutdown Current: < 1 µA
The TPA2100P1 (TPA2100) features an integratedShort-Circuit and Thermal Protection
audio low pass filter that rejects high frequency noiseSpace Saving Package
(CODEC out-of-band and RF noise) thus improving 2,1 mm × 2,1 mm NanoFree™ WCSP (YZH)
audio fidelity.
The TPA2100P1 (TPA2100) has three gain modes of12 dB, 16 dB, and 24 dB. The TPA2100P1Wireless or Cellular Handsets
(TPA2100) provides thermal and short circuitPortable DVD Player
protection on the boost converter and the Class-Daudio amplifier. The TPA2100P1 (TPA2100) isPersonal Digital Assistants (PDAs)
available in a 16-ball 2,1 mm × 2,1 mm WCSPElectronic Dictionaries
package. The TPA2100P1 (TPA2100) requires onlyDigital Still Cameras
one small external inductor for operation.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2NanoFree is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2008, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
l TEXAS INSTRUMENTS
DEVICE PINOUT
SDa
IN+IN–GND
GNDVccOUT SWVccIN
VddBSTGAINOUT+
GNDVrefOUT–
SD
D1 D2 D3 D4
C1 C2 C3 C4
B1 B3 B4B2
A1 A2 A3 A4
TPA2100P1
SLOS595 – DECEMBER 2008 ...........................................................................................................................................................................................
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.
YZH wcsp) package
(TOP VIEW)
PIN FUNCTIONS
PIN
I/O/P DESCRIPTIONName WCSP
IN+ D3 I Positive Differential Audio Input
IN – D2 I Negative Differential Audio Input
SDa C3 I Audio Amplifier Shutdown
GAIN B2 I Gain Selection (tri-state input)
SD D4 I Device Shutdown
Vref C2 O Internal Analog Supply (Do not connect to external supply/circuit)
OUT+ B1 O Positive Differential Audio Output
OUT C1 O Negative Differential Audio Output
BST B3 O Reference Voltage for Boost Converter
V
DD
B4 P Power Supply
V
CC
OUT A2 P DC-DC Converter Output Voltage
V
CC
IN A1 P Audio Amplifier Power Supply
SW A3 P Boost and Rectifying Switch Input
GND A4, C4,D1 P Ground
2Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS
ABSOLUTE MAXIMUM RATINGS
(1)
DISSIPATION RATINGS
(1)
AVAILABLE OPTIONS
TPA2100P1
www.ti.com
........................................................................................................................................................................................... SLOS595 – DECEMBER 2008
Over operating free-air temperature range (unless otherwise noted)
VALUE UNIT
Supply voltage, V
DD
– 0.3 to 6.0 V
Amplifier supply voltage, VccOUT, VccIN – 0.3 to 12.0 V
V
I
Input voltage, IN-, IN+, SDa, SD, GAIN – 0.3 to V
DD
+ 0.3 V
Output continuous total power dissipation See Dissipation RatingTable
T
A
Operating free-air temperature range 40 to 85 ° C
T
J
Operating junction temperature range 40 to 150 ° C
T
stg
Storage temperature range 65 to 150 ° C
ESD Protection — HBM (All Pins) 2 kV
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratingsonly, and functional operations of the device at these or any other conditions beyond those indicated under recommended operatingconditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
PACKAGE T
A
25 ° C DERATING FACTOR T
A
= 70 ° C T
A
= 85 ° C
16-ball WCSP (YZH) 1.66 W 13.3 mW/ ° C 1.06 W 0.86 W
(1) Dissipation ratings are for a 2-side, 2-plane board JEDEC high K board.
T
A
PACKAGED DEVICES
(1)
PART NUMBER
(2)
SYMBOL
TPA2100P1YZHR 40 ° C to 85 ° C 16-ball WCSP, 2,1mm × 2,1 mm (+ 0,01 / 0,09 mm) CEHTPA2100P1YZHT
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TIwebsite at www.ti.com .(2) The YZH package is only available taped and reeled. The suffix " R " indicates a reel of 3000; the suffix " T " indicates a reel of 250.
Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
TPA2100P1
SLOS595 – DECEMBER 2008 ...........................................................................................................................................................................................
www.ti.com
MIN MAX UNIT
Supply voltage V
DD
2.5 5.5 V
Output voltage range VccIN, VccOUT 9.5 10.5 V
V
IH
High-level input voltage SD, SDa 1.3 V
V
IL
Low-level input voltage SD, SDa 0.6 V
I
IH
High-level input current SD, SDa, V
DD
= 2.5 V to 5.5 V 1 µA
I
IL
Low-level input current SD, SDa, V
DD
= 2.5 V to 5.5 V 1 µA
f
OSC
Oscillator frequency 1.1 1.3 MHz
T
A
Operating free-air temperature 40 85 ° C
T
A
= 25 ° C, SD 1.3 V, GAIN = 12 dB, LOAD = 10 +1 µF + 33 µH (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
DD
Supply voltage range 2.5 3.6 5.5 V
I
SD
Shutdown quiescent current SD 0.35 V, V
DD
= 2.5 V to 5.5 V 0.5 1 µA
V
DD
= 3.0 V 6 9
I
DD
Supply current V
DD
= 3.6 V 5.5 8 mA
V
DD
= 5.5 V 4 5
f
SW
Class-D switching frequency 250 300 350 kHz
f
BOOST
Boost converter switching frequency 1.1 1.2 1.3 MHz
POR Power on reset on threshold 2.2 V
POR Power on reset hysteresis 0.2 V
V
IN
= ± 100 mV, V
DD
= 2.5 V 0.5 2.0
CMR Input common mode range V
IN
= ± 100 mV, V
DD
= 3.6 V 0.5 2.7 V
V
IN
= ± 100 mV, V
DD
= 5.5 V 0.5 2.7
V
OOS
Output offset voltage V
DD
= 3.6 V, Av = 12 dB, inputs ac 1.4 5 mVgrounded
Z
OUT
Output Impedance in shutdown mode SD 0.35 V 2 k
GAIN 0.35 V 11.3 11.8 12.3
A
V
Gain 0.7 V GAIN 1 V 15.5 16 16.5 dB
GAIN 1.35 V 23.5 24 24.5
4Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS
OPERATING CHARACTERISTICS
TYPICAL CHARACTERISTICS
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
AverageP − WowerConsumption
Class-ABw.
Dynamic
Class-ABw.
Piezo A
VDD =3.6V
Load=PiezoSpeaker
VO=14VppMax.
TPA2100P1w.
Piezo A
Class-Dw.
Dynamic
Pop
Ringtone
Disco
Classical
News − Intro
News − Interview
VDD − SupplyVoltage − V
0
1
2
3
4
5
6
7
8
9
10
2.5 3.0 3.5 4.0 4.5 5.0 5.5
IDD QuiescentSupplyCurrent mA
Gain=12dB
SD SDa= =2V
TPA2100P1
www.ti.com
........................................................................................................................................................................................... SLOS595 – DECEMBER 2008
T
A
= 25 ° C, V
DD
= 3.6 V, SD = SDa = 1.3 V, Gain = 12 dB, Load = 10 + 1 µF + 22 µH (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Maximum output voltage THD+N = 1%, Vdd = 3.0 V, L = 4.7 µH, 19V
OUTMAX
V
PPswing f
AUD_IN
10 kHz
Total harmonic distortion plus f
AUD_IN
= 1 kHz; V
OUT
= 10 to 18 V
P-P
0.07%THD+N
noise
k
SVR
Supply ripple rejection ratio 200 mV
PP
supply ripple at 217 Hz – 100 dB
R
L
= 8 , V
icm
= 0.5V and V
icm
= Vdd – 0.8 V,CMRR Input common mode rejection – 60 dBdifferential inputs shorted
Av = 12 dB 23.2
Z
IN
Input impedance Av = 16 dB 18.5 k
Av = 24 dB 10
f = 20 to 20 kHz, V
OUT
= 6 V
RMS
, Av = 12 dB, 94SNR Signal to noise ratio dBA-weighted
t
ON
Start up time (Class-D and 2.5 V V
DD
5.5 V, no turn-on pop, C
IN
1µF 8 msBoost converter)
T
A
= 25 ° C, V
DD
= 3.6 V, Gain = 12 dB, C
IN
= 1 µF, L
BOOST
= 4.7 µH, C
BOOST
= 10 µF, SD = SDa = 3.6 V,Load = 10 + 1 µF + 22 µH (unless otherwise noted)
QUIESCENT SUPPLY CURRENT AVERAGE POWER CONSUMPTIONvs vsSUPPLY VOLTAGE AUDIO DRIVER TYPE
Figure 1. Figure 2.
Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS \ /¢;"’ _// j/i \ \HHH \ \ \ k \
VO− OutputVoltage − Vrms
0.00
0.05
0.10
0.15
0.20
0.25
0 1 2 3 4 5 6 7
P -TotalSupplyPower − W
SUP
Frequency=1kHz
VDD =3.6V
VDD =5.5V
VDD =2.5V
VO− OutputVoltage − Vrms
0
10
20
30
40
50
60
70
80
90
100
0 1 2 3 4 5 6 7
IDD T
otalSupplyCurrent − mA
Frequency=1kHz
VDD =3.6V
VDD =5.5V
VDD =2.5V
0
1
2
3
4
5
6
7
8
9
10
f − Frequency − Hz
THD=1%@1kHz
VO− OutputVoltageDrive − Vrms
20 100 1k 10k 20k
VDD =3.6V
VDD =5.5V
VDD =2.5V
0
1
2
3
4
5
6
7
8
9
10
f − Frequency − Hz
THD=10%@1kHz
VO− OutputVoltageDrive − Vrms
20 100 1k 10k 20k
VDD =3.6V
VDD =2.5V
VDD =5.5V
TPA2100P1
SLOS595 – DECEMBER 2008 ...........................................................................................................................................................................................
www.ti.com
TYPICAL CHARACTERISTICS (continued)
T
A
= 25 ° C, V
DD
= 3.6 V, Gain = 12 dB, C
IN
= 1 µF, L
BOOST
= 4.7 µH, C
BOOST
= 10 µF, SD = SDa = 3.6 V,Load = 10 + 1 µF + 22 µH (unless otherwise noted)
TOTAL SUPPLY INPUT POWER TOTAL SUPPLY CURRENTvs vsOUTPUT VOLTAGE OUTPUT VOLTAGE
Figure 3. Figure 4.
OUTPUT VOLTAGE DRIVE OUTPUT VOLTAGE DRIVEvs vsFREQUENCY FREQUENCY
Figure 5. Figure 6.
6Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS
f − Frequency − Hz
20 100 1k 10k
THD+N − T
otalHarmonicDistortion+Noise − %
0.01
1
10
20k
0.1
VDD =2.5V
VO=6Vrms
VO=2Vrms
VO=4Vrms
f − Frequency − Hz
20 100 1k 10k
THD+N − T
otalHarmonicDistortion+Noise − %
0.01
1
10
20k
0.1
VDD =3.6V
VO=2Vrms
VO=4Vrms
VO=6Vrms
f − Frequency − Hz
20 100 1k 10k
THD+N − T
otalHarmonicDistortion+Noise − %
0.01
1
10
20k
0.1
VDD =5.5V
VO=2Vrms
VO=4Vrms
VO=6Vrms
TPA2100P1
www.ti.com
........................................................................................................................................................................................... SLOS595 – DECEMBER 2008
TYPICAL CHARACTERISTICS (continued)
T
A
= 25 ° C, V
DD
= 3.6 V, Gain = 12 dB, C
IN
= 1 µF, L
BOOST
= 4.7 µH, C
BOOST
= 10 µF, SD = SDa = 3.6 V,Load = 10 + 1 µF + 22 µH (unless otherwise noted)
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISEvs vsOUTPUT VOLTAGE FREQUENCY
Figure 7. Figure 8.
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISEvs vsFREQUENCY FREQUENCY
Figure 9. Figure 10.
Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS HHH H x , \§ 7 §§ % ’ n'. ~‘s~ * E F f , M1,"; " 7 MW ‘77“ l-11me-ms
−110
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
f − Frequency − Hz
Ksvr SupplyRippleRejectionRatio − dB
20 100 1k 10k 20k
VDD =5.5V
VDD =3.6V
V =200mVpp
RIPPLE
f − Frequency − Hz
Phase °
50
40
30
20
10
0
−10
−20
−60
0
5
10
15
20
25
30
Closed-LoopResponse − dB
−30
−40
−50
20 100 1k 10k 20k
CI=1 mF
VI=100mVrms
Gain =24dB
Gain=16dB
Gain=12dB
Phase@Gain=24dB
Phase@Gain=12dB
Phase@Gain=16dB
t Time ms
−3
−1
1
3
5
7
9
11
13
0.000 0.005 0.010 0.015 0.020
V − Voltage − V
VDD =3.6V
VCC
VO
SD SDaand
0
2
4
6
8
10
12
0.0 0.5 1.0 1.5 2.0 2.5
VO− OutputVoltage − mVrms
V − InputV
Ioltage − mVrms
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
P -TotalSupplyPower − W
SUP
VDD =3.6V
SupplyInputPower
OutputVoltage
TPA2100P1
SLOS595 – DECEMBER 2008 ...........................................................................................................................................................................................
www.ti.com
TYPICAL CHARACTERISTICS (continued)
T
A
= 25 ° C, V
DD
= 3.6 V, Gain = 12 dB, C
IN
= 1 µF, L
BOOST
= 4.7 µH, C
BOOST
= 10 µF, SD = SDa = 3.6 V,Load = 10 + 1 µF + 22 µH (unless otherwise noted)
SUPPLY RIPPLE REJECTION RATIO GAIN AND PHASEvs vsFREQUENCY FREQUENCY
Figure 11. Figure 12.
STARTUP WAVEFORMS TOTAL SUPPLY INPUT POWER AND OUTPUT VOLTAGEvs vsTIME INPUT VOLTAGE
Figure 13. Figure 14.
8Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS
APPLICATION INFORMATION
FULLY DIFFERENTIAL CLASS-D AUDIO POWER AMPLIFIER
DRIVING A CERAMIC/PIEZO SPEAKER
LOAD CONFIGURATION
TPA2100P1
www.ti.com
........................................................................................................................................................................................... SLOS595 – DECEMBER 2008
The TPA2100P1 consists of a boost converter and a Class-D amplifier. The boost converter takes a low supplyvoltage, VDD, and increases it to a higher output voltage, V
CC
OUT. V
CC
IN is the power supply for the Class-Damplifier. Connect V
CC
OUT to V
CC
IN.
The TPA2100P1 is a fully differential amplifier. The fully differential amplifier includes a differential amplifier withcommon-mode feedback. The differential output is equal to the differential input times the gain. Thecommon-mode feedback ensures that the common-mode voltage at the output is biased around V
CC
/2 (Class-Dsupply voltage, V
CC
OUT, divided by 2) regardless of the common-mode voltage at the input. The fully differentialTPA2100P1 can still be used with a single-ended input; however, the TPA2100P1 should be used withdifferential inputs when in a noisy environment, like a wireless handset, to ensure maximum noise rejection.Input-coupling capacitors are not required: The TPA2100P1 inputs can be biased anywhere within the common mode input voltage range listed in theRecommended Operating Conditions table. If the inputs are biased outside of that range, theninput-coupling capacitors are required.Mid-supply bypass capacitor, C
BYPASS
, is not required: The fully differential amplifier does not require a bypass capacitor. Any shift in the midsupply affects bothpositive and negative channels equally and cancels at the differential output.Excellent RF-immunity and supply noise rejection: GSM handsets save power by turning on and off the RF transmitter at 217 Hz. The transmitted signal ispicked-up on input, output, and power supply traces. The fully differential amplifier cancels the signalbetter than a typical audio amplifier.
Applications that require thin cases, such as mobile phones, demand that external components have a smallform factor. Dynamic loudspeakers that use a cone and voice coil typically cannot conform to the heightrequirements. The option for these applications is to use a ceramic/piezoelectric loudspeaker.
Ceramic speakers have a capacitive behavior unlike a conventional loudspeaker, which has an inductivebehavior. Typical capacitance values for ceramic/piezo speakers are as high as 2 µF. High peak-to-peak voltagedrive is required to achieve acceptable sound pressure levels. Ceramic/piezo speakers have low currentconsumption at frequencies up to 8 kHz. The impedance of the ceramic/piezo speaker decreases with increasingaudio frequency, thus requiring higher current as the frequency increases. However, audio signals in this rangeare higher harmonics of lower fundamentals, so the current demand is still small when compared to dynamicspeaker current consumption.
Due to these characteristics, ceramic/piezo speakers are efficient in converting electrical audio signals into soundpressure in the mid and high audio bands (starting at 900 Hz).
The TPA2100P1 overcomes the challenges of driving a ceramic/piezo speaker. The TPA2100P1 drives theceramic/piezo speaker with a constant output voltage over the battery life and across the audio frequency range.
The TPA2100P1 can be configured in several different ways to drive a ceramic/piezo speaker. The most obviousconfiguration is to place a resistor on each output of the Class-D amplifier. A more efficient configuration is toreplace one resistor with an inductor at one of the outputs. A third way to configure is to place just one resistorbetween the output and the speaker and connect the other output directly to the speaker.
For proper configuration of the load, it is important to observe the following variables:Speaker capacitance – C
SPKMaximum available current from the Boost converter – I
BOOSTMAXHighest desired audio frequency – f
AUDMAXMaximum voltage allowed across the speaker – V
OUTPEAKPeak Output Current from the Class-D Amplifier – I
CLASSDPEAK
Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS T
RESISTOR – SPEAKER – RESISTOR LOAD CONFIGURATION
Vdd SW
IN-
IN+
GND GND
OUT +
OUT -
VccOUT
VccIN
CIN
CIN
SD
SDa
GAIN
Digital
BaseBand
Analog
Baseband
or
CODEC
VIN
2.5 Vto
5.5 V
Vref
BST
10nF
10 Fm
10 Fm
1 Fm
4.7 Hm
5~10 W
5~10 W
1 Fm
0.1~2 Fm
R
R
AUDMAX
SPK
1
=
2 R C
f
p´ ´ ´
(1)
OUTPEAK
CLASSDPEAK 2 2
V
I =
R + XC
(2)
AUDMAX SPK
1
XC =
2 f Cp´ ´ ´
(3)
RESISTOR – SPEAKER – INDUCTOR LOAD CONFIGURATION
TPA2100P1
SLOS595 – DECEMBER 2008 ...........................................................................................................................................................................................
www.ti.com
This is the simplest configuration. However, this type of load configuration does not achieve the best efficiencypossible. Thus, it is recommended to use the resistor – speaker – inductor load configuration. The followingfigure shows an example of the resistor – speaker – resistor configuration.
Figure 15. Application Schematic with Resistor – Speaker – Resistor Load Configuration
For the RC load configuration, only two calculations are required. Note that R in Equation 1 is the sum of the twooutput resistors in Figure 15 .
The highest desired audio frequency will be limited by the RC low-pass filter configuration of the load:
Peak Output Current from the Class-D Amplifier should therefore be limited to the maximum audio frequency:
Where XC is:
To calculate the proper boost converter inductor required for this application, see the Inductor Selection section.
Note that an input low-pass filter should be added before the audio amplifier in order to limit the audio frequency,f
AUDMAX
.
The second configuration with a resistor speaker inductor load is the most efficient configuration and is thepreferred solution. Figure 16 shows an example of this configuration.
10 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS 7
Vdd SW
IN-
IN+
GND GND
OUT+
OUT-
VccOUT
VccIN
CIN
CIN
SD
SDa
GAIN
Digital
BaseBand
Analog
Baseband
or
CODEC
VIN
2.5Vto
5.5 V
Vref
BST
10nF
1 Fm
4.7 Hm
10 Fm
10~20 W
10~22 Hm
10 Fm
0.1~2 Fm
1 Fm
R
L
SPK
R C
ζ = 2 L
´
´
(4)
AUDMAX
SPK
1
=
2 R C´ ´ ´
f
p
(5)
AUDMAX SPK
1
XC =
2 × × × Cfp
(6)
AUDMAX
XL = 2 Lfp´ ´ ´
(7)
( )2
2
Z = R + XL XC-
(8)
OUTPEAK
CLASSDPEAK
V
I =
Z
(9)
RESISTOR – SPEAKER LOAD CONFIGURATION
TPA2100P1
www.ti.com
........................................................................................................................................................................................... SLOS595 – DECEMBER 2008
Figure 16. Application Schematic with Resistor – Speaker – Inductor Load Configuration
For the resistor – speaker – inductor load configuration, it is desired to make the output load configurationoverdamped (Zeta ( ζ) > 0.707). Use Equation 4 to calculate ζ:
If ζis greater than one, then the maximum audio frequency will be limited by the resistor speaker capacitancelow pass filter as shown in Equation 5 .
Calculate equivalent load impedance with Equation 6 , through Equation 9 .
To calculate the proper boost converter inductor required for this application, see the Inductor Selection section.
Note that an input low pass filter should be added before the audio amplifier in order to limit the audio frequency,f
AUDMAX
.
This load configuration is similar to the resistor – speaker – resistor load configuration. Apply the same equationshere to calculate the maximum audio frequency and maximum required current from the class-D audio amplifier.
Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 11
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS
Vdd SW
IN-
IN+
GND GND
OUT+
OUT-
VccOUT
VccIN
CIN
CIN
SD
SDa
GAIN
Digital
BaseBand
Analog
Baseband
or
CODEC
VIN
2.5Vto
5.5 V
Vref
BST
10nF
1 Fm
4.7 Hm
10 Fm
10~20 W
10 Fm
0.1~2 Fm
1 FmR
BOOST CONVERTER
INDUCTOR SELECTION
SURFACE MOUNT INDUCTORS
TPA2100P1 INDUCTOR EQUATIONS
TPA2100P1
SLOS595 – DECEMBER 2008 ...........................................................................................................................................................................................
www.ti.com
Figure 17. Application Schematic with Resistor – Speaker Load Configuration
There are two main passive components necessary for the functioning of a boost converter. The boost inductorstores current, and the boost capacitor stores charge. When the Class-D amplifier depletes the charge in theboost capacitor, the boost inductor charges it back up with the stored current. The cycle of charge/dischargeoccurs at a frequency of f
boost
.
The following is a list of terms and definitions used in the boost equations found in this document.
C Minimum boost capacitance required for a given ripple voltage on V
CC
L Boost inductor
f
BOOST
Switching frequency of the boost converter.
I
CC
Current pulled by the Class-D amplifier from the boost converter.
I
L
Average current through the boost inductor.
V
CC
Boost voltage. Generated by the boost converter (V
CC
OUT). Voltage supply for the Class-Damplifier (V
CC
IN).
V
DD
Supply voltage to the IC.
ΔI
L
Ripple current through the inductor.
ΔV Ripple voltage of V
CC
due to capacitance. V
CC
is the voltage on the VccOUT and VccIN pins.
Working inductance decreases as inductor current increases. If the drop in working inductance is severe enough,it may cause the boost converter to become unstable, or cause the TPA2100P1 to reach its current limit at alower output voltage than expected. Inductor vendors specify currents at which inductor values decrease by aspecific percentage. This can vary by 10% to 35%. Inductance is also affected by dc current and temperature.
Inductor current rating is determined by the requirements of the load. The inductance is determined by twofactors: the minimum value required for stability and the maximum ripple current permitted in the application.
12 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS
0.8
CC
L CC
DD
V
I = I
V
æ ö
´ç ÷
´
è ø
(10)
( )
DD CC DD
L boost CC
V V V
L =
I f V
´ -
D ´ ´
(11)
CAPACITOR SELECTION
SURFACE MOUNT CAPACITORS
TPA2100P1
www.ti.com
........................................................................................................................................................................................... SLOS595 – DECEMBER 2008
Use Equation 10 to determine the required current rating. Equation 10 shows the approximate relationshipbetween the average inductor current, I
L
, to the load current, load voltage, and input voltage (I
CC
, V
CC
, and V
DD
,respectively). Insert I
CC
, V
CC
, and V
DD
into Equation 10 to solve for I
L
. The inductor must maintain at least 90% ofits initial inductance value at this current.
The minimum working inductance is 3.3 µH. A lower value may cause instability.
Ripple current, ΔI
L
, is peak-to-peak variation in inductor current. Smaller ripple current reduces core losses in theinductor as well as the potential for EMI. Use Equation 11 to determine the value of the inductor, L. Equation 11shows the relationship between inductance L, V
DD
, V
CC
, the switching frequency, f
BOOST
, and ΔI
L
. Insert themaximum acceptable ripple current into Equation 11 to solve for L.
ΔI
L
is inversely proportional to L. Minimize ΔI
L
as much as is necessary for a specific application. Increase theinductance to reduce the ripple current. Note that making the inductance value of L greater than 10 µH willprevent the boost converter from responding to fast load changes properly. A typical inductor value for theTPA2100P1 is 4.7 µH.
Select an inductor with a dc resistance, DCR, no greater than 0.5 . DCR reduces the amount of power thedevice receives from the supply due to the voltage drop across the inductor.
Temperature and applied dc voltage influence the actual capacitance of high-K materials.
Table 1 shows the relationship between the different types of high-K materials and their associated tolerances,temperature coefficients, and temperature ranges. Notice that a capacitor made with X5R material can lose up to15% of its capacitance within its working temperature range.
Table 1. Typical Tolerance and Temperature Coefficient of Capacitance by Material
MATERIAL COG/NPO X7R X5R
Typical tolerance ± 5% ± 10% ± 20%
Temperature Coefficient ± 30 ppm ± 15% ± 15%
Temperature range, ° C 55/125 ° C 55/125 ° C 55/85 ° C
High-K material is very sensitive to applied dc voltage. X5R capacitors have can have losses ranging from 15%to 45% of their initial capacitance with only half of their dc rated voltage applied. For example, if 5 Vdc is appliedto a 10 V, 1 µF X5R capacitor, the measured capacitance at that point may show between 0.55 µF and 0.85 µF.Y5V capacitors have losses that can reach or exceed 50% to 75% of their rated value.
The working capacitance of components made with high-K materials is generally much lower than nominalcapacitance. A worst case result with a typical X5R material might be – 10% tolerance, – 15% temperature effect,and 45% dc voltage effect at 50% of the rated voltage. This particular case would result in a workingcapacitance of 42% (0.9 × 0.85 × 0.55) of the nominal value.
Select high-K ceramic capacitors according to the following rules:
1. Use capacitors made of materials with temperature coefficients of X5R, X7R, or better.
2. Use capacitors with dc voltage ratings of at least twice the application voltage, because high-K capacitorvalues generally are reduced by DC voltage. 25V capacitors are recommended when boost converter outputis 10V. The minimum rating that should be used in this case is 16V, but correct operation should be verifiedcarefully.
3. Choose a capacitance value at least twice the nominal value calculated for the application. Multiply thenominal value by a factor of 2 for safety. If a 10 µF capacitor is required, use 22 µF.
Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 13
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS
TPA2100P1 CAPACITOR EQUATIONS
( )
CC CC DD
boost CC
I V V
C = 2
V f V
´ -
´D ´ ´
(12)
( )
CC CC DD
boost CC
I V V
C =
V f V
´ -
D ´ ´
(13)
Decoupling Capacitors
Input Capacitors, C
I
C
I I
1
=(2 R C )
f
p ´ ´
(14)
TPA2100P1
SLOS595 – DECEMBER 2008 ...........................................................................................................................................................................................
www.ti.com
The preceding rules and recommendations apply to capacitors used in connection with the TPA2100P1. TheTPA2100P1 cannot meet its performance specifications if the rules and recommendations are not followed.
The value of the boost capacitor is determined by the minimum value of working capacitance required for stabilityand the maximum voltage ripple allowed on V
CC
in the application. The minimum value of working capacitance is10 µF. Do not use any component with a working capacitance less than 10 µF.
For X5R or X7R ceramic capacitors, Equation 12 shows the relationship between the boost capacitance, C, toload current, load voltage, ripple voltage, input voltage, and switching frequency (I
CC
, V
CC
,ΔV, V
DD
, f
BOOSTrespectively).
Insert the maximum allowed ripple voltage into Equation 12 to solve for C. A factor of 2 is included to implementthe rules and specifications listed earlier.
For aluminum or tantalum capacitors, Equation 13 shows the relationship between he boost capacitance, C, toload current, load voltage, ripple voltage, input voltage, and switching frequency (I
CC
, V
CC
,ΔV, V
DD
, f
BOOSTrespectively). Insert the maximum allowed ripple voltage into Equation 12 to solve for C. Solve this equationassuming ESR is zero.
Capacitance of aluminum and tantalum capacitors is normally not sensitive to applied voltage so there is nofactor of 2 included in Equation 4 . However, the ESR in aluminum and tantalum capacitors can be significant.Choosing an aluminum or tantalum capacitor with ESR around 30 m is acceptable.
The TPA2100P1 is a high-performance Class-D audio amplifier that requires adequate power supply decouplingto ensure the efficiency is high and total harmonic distortion (THD) is low. In addition to the 10 µF capacitor atV
DD
, place a 1 µF low ESR capactior within 1 mm of the V
DD
pin to reduce higher frequency transients, spikes, ordigital hash on the line. For the same reasons place a 1 µF low ESR capactior within 1 mm of the V
CC
OUT pin inaddition to the boost output capacitor.
The TPA2100P1 does not require input coupling capacitors if the design uses a low offset differential source thatis biased within the common mode input voltage range. Note that source offset is amplified if no DC blockingcapacitors are used. If the input signal is not biased within the recommended common-mode input range, if highpass filtering is needed, or if using a single-ended source, input coupling capacitors are required.
The input capacitors and input resistors form a high-pass filter with the corner frequency, ƒ
C
, determined inEquation 14 .
The value of the input capacitor directly affects the bass (low frequency) performance of the circuit. Piezospeakers cannot usually respond well to low frequencies, so the corner frequency can be set to block lowfrequencies and reduce speaker distortion in this application. Not using input capacitors can increase outputoffset.
Use Equation 15 to solve for the input coupling capacitance. If the corner frequency is within the audio band, theinput capacitors should have a tolerance of ± 10% or better, because any mismatch in capacitance causes animpedance mismatch at the corner frequency and below.
14 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS
I
I C
1
C = (2 R )fp ´ ´
(15)
BOARD LAYOUT
Copper
TraceWidth
Solder
PadWidth
SolderMask
Opening
CopperTrace
Thickness
SolderMask
Thickness
TPA2100P1
www.ti.com
........................................................................................................................................................................................... SLOS595 – DECEMBER 2008
In making the pad size for the WCSP balls, it is recommended that the layout use nonsolder mask defined(NSMD) land. With this method, the solder mask opening is made larger than the desired land area, and theopening size is defined by the copper pad width. Figure 18 and Table 2 shows the appropriate diameters for aWCSP layout.
Figure 18. Land Pattern Dimensions
Table 2. Land Pattern Dimensions
(1) (2) (3) (4)
SOLDER PAD SOLDER MASK
(5)
COPPER STENCIL
(6) (7)
STENCILCOPPER PADDEFINITIONS OPENING THICKNESS OPENING THICKNESS
Nonsolder mask 275 µm × 275 µm Sq.275 µm (+0.0, – 25 µm) 375 µm (+0.0, – 25 µm) 1 oz max (32 µm) 125 µm thickdefined (NSMD) (rounded corners)
(1) Circuit traces from NSMD defined PWB lands should be 75 µm to 100 µm wide in the exposed area inside the solder mask opening.Wider trace widths reduce device stand off and impact reliability.(2) Best reliability results are achieved when the PWB laminate glass transition temperature is above the operating the range of theintended application(3) Recommend solder paste is Type 3 or Type 4.(4) For a PWB using a Ni/Au surface finish, the gold thickness should be less 0,5 mm to avoid a reduction in thermal fatigue performance.(5) Solder mask thickness should be less than 20 µm on top of the copper circuit pattern(6) Best solder stencil performance is achieved using laser cut stencils with electro polishing. Use of chemically etched stencils results ininferior solder paste volume control.(7) Trace routing away from WCSP device should be balanced in X and Y directions to avoid unintentional component movement due tosolder wetting forces.
Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS
Component Location
Trace Width
EFFICIENCY AND THERMAL INFORMATION
o
JA
1 1
θ = = = 75 C/W
Derating Factor 0.0133
(16)
o
A J JA Dmax
T Max = T Max θ P = 150 75(1) = 75 C- -
(17)
OPERATION WITH DACs AND CODECs
FILTER FREE OPERATION
TPA2100P1
SLOS595 – DECEMBER 2008 ...........................................................................................................................................................................................
www.ti.com
Place all the external components as close as possible to the TPA2100P1. Placing the decoupling capacitor asclose as possible to the TPA2100P1 is important for the efficiency of the Class-D amplifier. Any resistance orinductance in the trace between the device and the capacitor can cause a loss in efficiency.
Recommended trace width at the solder balls is 75 µm to 100 µm to prevent solder wicking onto wider PCBtraces.
For high current pins (SW, VccOUT, VccIN, GND, and audio output pins) of the TPA2100P1, use 100 µm tracewidths at the solder balls and at least 500 µm PCB traces to ensure proper performance and output power forthe device.
For the remaining signals of the TPA2100P1, use 75 µm to 100 µm trace widths at the solder balls. The audioinput pins (IN- and IN+) must run side-by-side to maximize common-mode noise cancellation.
The maximum ambient temperature depends on the heat-sinking ability of the PCB system. The derating factorfor the packages are shown in the dissipation rating table. Converting this to θ
JA
for the WCSP package:
Given θ
JA
of 75 ° C/W, the maximum allowable junction temperature of 150 ° C, and the maximum estimatedinternal dissipation of 1 W (driving 1 µF speaker with 6 Vrms 15 kHz sine wave, the maximum ambienttemperature is calculated with Equation 17 .
Equation 17 shows that the calculated maximum ambient temperature is 75 ° C at maximum power dissipation.The TPA2100P1 is designed with thermal protection that turns the device off when the junction temperaturesurpasses 150 ° C to prevent damage to the IC. Using the resistor- speaker - resistor or the resistor - speaker loadconfigurations dramatically increases the temperature of the TPA2100P1 since those configurations require amuch higher output current.
When using Class-D amplifiers with CODECs and DACs, sometimes there is an increase in the output noise floorfrom the audio amplifier. This occurs when the output frequencies of the CODEC/DAC mix with the switchingfrequencies of the audio amplifier input stage.
The TPA2100P1 has a built-in low-pass filter to reduce CODEC/DAC out-of-band noise that could mix with theswitching frequency of the Class-D amplifier.
A ferrite bead filter is not required for operation with the resistor speaker resistor load configuration or withthe resistor – speaker – inductor load configuration. In order to achieve low radiated emissions, the resistorand/or inductor should be placed within 1 cm of the output of the amplifier and followed with a 100 pF to 1000 pFcapacitor to GND. Figure 19 and Figure 20 show typical load configurations to reduce radiated emissions.
16 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS i I :6 _ ML 1 L 1:6
OUT+
OUT-
330pF
5~10 W
22 Hm
330pF
PiezoSpeaker
0.1~2 Fm
OUT+
OUT-
330pF
5~10 W
5~10 W
PiezoSpeaker
0.1~2 Fm
330pF
30M
f - Fr equency - Hz
0
10
20
30
40
50
60
70
Lim
it Level - dBuV/m
230M 430M 630M 830M
TPA2100P1
www.ti.com
........................................................................................................................................................................................... SLOS595 – DECEMBER 2008
Figure 19. Typical Radiated Emissions Suppression Circuit (Resistor-Speaker-Inductor Load)
Figure 20. Typical Radiated Emissions Suppression Circuit (Resistor-Speaker-Resistor Load)
Figure 21 shows the EMC performance of Figure 19 using a 1 µF load to simulate the speaker. Table 3 list themeasurement conditions. The worst-case quasi-peak margin is 14.4 dB at 55.9 MHz.
Figure 21. Measured Radiated Emissions – Vertical Front
Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 17
Product Folder Link(s): TPA2100P1
l TEXAS INSTRUMENTS i
OUT+
OUT-
Ferrite
ChipBead
Ferrite
ChipBead
1nF
1nF
10~20 W
PiezoSpeaker
0.1~2 Fm
TPA2100P1
SLOS595 – DECEMBER 2008 ...........................................................................................................................................................................................
www.ti.com
Table 3. Measurement Conditions for Radiated Emissions of Figure 21
PARAMETER VALUE UNIT
V
DD
Supply Voltage 3.6 V
A
V
Gain 12 dB
f
AUD
Input signal frequency 1 kHz
V
I
Input signal amplitude 1.3 V
RMS
V
O
Output signal amplitude 5.3 V
RMS
C
L
Load capacitance 1 µF
Cable length 25.4 mm
Antenna position Vertical Front
For a full Radiated Emissions report, please contact your local TI representative.
For operation with a resistor speaker load configuration the ferrite bead filter can often be used if the design isfailing radiated emissions without an LC filter and the frequency sensitive circuit is greater than 1 MHz. This filterfunctions well for circuits that just have to pass FCC and CE because FCC and CE only test radiated emissionsgreater than 30 MHz. When choosing a ferrite bead, choose one with high impedance at high frequencies, andvery low impedance at low frequencies. In addition, select a ferrite bead with adequate current rating to preventdistortion of the output signal.
Figure 22 shows a typical ferrite bead output filter.
Figure 22. Typical Ferrite Bead Filter (Chip bead example: TDK: MPZ1608Y101B)
18 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): TPA2100P1
I TEXAS INSTRUMENTS Sample: Sample:
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
TPA2100P1YZHR ACTIVE DSBGA YZH 16 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM CEH
TPA2100P1YZHT ACTIVE DSBGA YZH 16 250 RoHS & Green SNAGCU Level-1-260C-UNLIM CEH
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
I TEXAS INSTRUMENTS
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 2
I TEXAS INSTRUMENTS REEL DIMENSIONS TAPE DIMENSIONS 7 “K0 '«m» Reel Diame|er AD Dimension deswgned to accommodate the componem wwdlh E0 Dimension desxgned to accommodate the componenl \ength KO Dimenslun deswgned to accommodate the componem thickness 7 w OveraH wwdm loe earner cape i p1 Pitch between successwe cavuy cemers f T Reel Width (W1) QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE O O O D O O D O Sprockemoles ,,,,,,,,,,, ‘ User Direcllon 0' Feed Pockel Quadrams
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TPA2100P1YZHR DSBGA YZH 16 3000 180.0 8.4 2.35 2.35 0.81 4.0 8.0 Q1
TPA2100P1YZHT DSBGA YZH 16 250 180.0 8.4 2.35 2.35 0.81 4.0 8.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 17-Jun-2015
Pack Materials-Page 1
I TEXAS INSTRUMENTS TAPE AND REEL BOX DIMENSIONS
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPA2100P1YZHR DSBGA YZH 16 3000 182.0 182.0 20.0
TPA2100P1YZHT DSBGA YZH 16 250 182.0 182.0 20.0
PACKAGE MATERIALS INFORMATION
www.ti.com 17-Jun-2015
Pack Materials-Page 2
www.ti.com
PACKAGE OUTLINE
C
0.625 MAX
0.35
0.15
1.5
TYP
1.5 TYP
0.5
TYP
0.5 TYP
16X 0.35
0.25
B E A
D
4226617/A 03/2021
DSBGA - 0.625 mm max heightYZH0016
DIE SIZE BALL GRID ARRAY
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
BALL A1
CORNER
SEATING PLANE
0.08 C
A
123
0.015 C A B
4
SYMM
SYMM
B
C
D
SCALE 7.500
D: Max =
E: Max =
2.252 mm, Min =
2.198 mm, Min =
2.192 mm
2.138 mm
www.ti.com
EXAMPLE BOARD LAYOUT
0.05 MIN
0.05 MAX
16X ( 0.245)
(0.5) TYP
(0.5) TYP
( 0.245)
SOLDER MASK
OPENING
( 0.245)
METAL
4226617/A 03/2021
DSBGA - 0.625 mm max heightYZH0016
DIE SIZE BALL GRID ARRAY
NOTES: (continued)
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
See Texas Instruments Literature No. SNVA009 (www.ti.com/lit/snva009).
SOLDER MASK DETAILS
NOT TO SCALE
SYMM
SYMM
C
1234
A
B
D
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 30X
NON-SOLDER MASK
DEFINED
(PREFERRED)
EXPOSED
METAL
SOLDER MASK
OPENING
SOLDER MASK
DEFINED
METAL UNDER
SOLDER MASK
EXPOSED
METAL
v¢ i \ x X x , x x x x I III I / ‘w“‘w‘+“\ ‘ IIII i J- HI J
www.ti.com
EXAMPLE STENCIL DESIGN
(0.5) TYP
(0.5) TYP
16X ( 0.25) (R0.05) TYP
4226617/A 03/2021
DSBGA - 0.625 mm max heightYZH0016
DIE SIZE BALL GRID ARRAY
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
SYMM
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.075 mm THICK STENCIL
SCALE: 30X
METAL
TYP
C
1234
A
B
D
IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you
permission to use these resources only for development of an application that uses the TI products described in the resource. Other
reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third party
intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims, damages,
costs, losses, and liabilities arising out of your use of these resources.
TI’s products are provided subject to TI’s Terms of Sale (https:www.ti.com/legal/termsofsale.html) or other applicable terms available either
on ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s
applicable warranties or warranty disclaimers for TI products.IMPORTANT NOTICE
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2021, Texas Instruments Incorporated