NTB0102 Datasheet by NXP USA Inc.

Datasheet Feedback/Errors

1. General description

The NTB0102 is a 2-bit, dual supply translating transceiver with auto direction sensing,

that enables bidirectional voltage level translation. It features two 2-bit input-output ports

(An and Bn), one output enable input (OE) and two supply pins (VCC(A) and VCC(B)). VCC(A)

can be supplied at any voltage between 1.2 V and 3.6 V and VCC(B) can be supplied at any

voltage between 1.65 V and 5.5 V, making the device suitable for translating between any

of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V).

Pins An and OE are referenced to VCC(A) and pins Bn are referenced to VCC(B). A LOW

level at pin OE causes the outputs to assume a high-impedance OFF-state. This device is

fully specified for partial power-down applications using IOFF. The IOFF circuitry disables

the output, preventing the damaging backflow current through the device when it is

powered down.

2. Features and benefits

Wide supply voltage range:

VCC(A): 1.2 V to 3.6 V and VCC(B): 1.65 V to 5.5 V

IOFF circuitry provides partial Power-down mode operation

Inputs accept voltages up to 5.5 V

ESD protection:

HBM JESD22-A114E Class 2 exceeds 2500 V for A port

HBM JESD22-A114E Class 3B exceeds 15000 V for B port

MM JESD22-A115-A exceeds 200 V

CDM JESD22-C101E exceeds 1500 V

Latch-up performance exceeds 100 mA per JESD 78B Class II

Multiple package options

Specified from 40 Cto+85C and 40 Cto+125C

NTB0102

Dual supply translating transceiver; auto direction sensing;

3-state

Rev. 4 — 23 January 2013 Product data sheet

MEN MEN D NKMN NKMN

Product data sheet Rev. 4 — 23 January 2013 2 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

3. Ordering information

4. Marking

[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.

5. Functional diagram

Table 1. Ordering information

Type number Package

Temperature range Name Description Version

NTB0102DP 40 C to +125 C TSSOP8 plastic thin shrink small outline package; 8 leads;

body width 3 mm; lead length 0.5 mm SOT505-2

NTB0102GT 40 Cto+125C XSON8 plastic extremely thin small outline package; no leads;

8 terminals; body 1  1.95  0.5 mm SOT833-1

NTB0102GD 40 Cto+125C XSON8 plastic extremely thin small outline package; no leads;

8 terminals; body 3  2  0.5 mm SOT996-2

NTB0102GF 40 Cto+125C XSON8 extremely thin small outline package; no leads;

8 terminals; body 1.35 10.5 mm SOT1089

NTB0102GU 40 C to +125 C XQFN10 plastic, extremely thin quad flat package; no leads;

10 terminals; body 1.40  1.80  0.50 mm SOT1160-1

Table 2. Marking

Type number Marking code[1]

NTB0102DP t02

NTB0102GT t02

NTB0102GD t02

NTB0102GF t2

NTB0102GU t2

Fig 1. Logic symbol

001aal914

CC(B)

CC(A)

E) C] C][j C][j C][j jjjj CECE Emma mama

Product data sheet Rev. 4 — 23 January 2013 3 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

6. Pinning information

6.1 Pinning

6.2 Pin description

Fig 2. Pin configuration SOT505-2 (TSSOP8) Fig 3. Pin configuration SOT833-1 (XSON8) and

SOT1089 (XSON8)

NTB0102

B2 B1

GND VCC(B)

VCC(A) OE

A2 A1

001aam484

NTB0102

CC(B)

CC(A)

GND

001aam485

Transparent top view

Fig 4. Pin configuration SOT996-2 (XSON8) Fig 5. Pin configuration SOT1160-1 (XQFN10)

001aam486

NTB0102

Transparent top view

GND

VCC(A)

VCC(B)

NTB0102

5B2

n.c.

4OE

B18

GND9

7 n.c.

CC(B)

A2 1

VCC(A) 2

terminal 1

index area

001aam560

Transparent top view

Table 3. Pin description

Symbol Pin Description

SOT505-2, SOT833-1, SOT1089 and SOT996-2 SOT1160-1

B2, B1 1, 8 5, 8 data input or output (referenced to VCC(B))

GND 2 9 ground (0 V)

VCC(A) 3 2 supply voltage A

A2, A1 4, 5 1, 10 data input or output (referenced to VCC(A))

la,

Product data sheet Rev. 4 — 23 January 2013 4 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

7. Functional description

[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.

[2] When either VCC(A) or VCC(B) is at GND level, the device goes into Power-down mode.

8. Limiting values

[1] The minimum input and minimum output voltage ratings may be exceeded if the input and output current ratings are observed.

[2] VCCO is the supply voltage associated with the output.

[3] VCCO + 0.5 V should not exceed 6.5 V.

[4] For TSSOP8 package: above 55 C the value of Ptot derates linearly with 2.5 mW/K.

For XSON8 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.

For XQFN10 package: above 128 C the value of Ptot derates linearly with 11.5 mW/K.

OE 6 4 output enable input (active HIGH;

referenced to VCC(A))

VCC(B) 7 6 supply voltage B

n.c. - 3, 7 not connected

Table 3. Pin description …continued

Symbol Pin Description

SOT505-2, SOT833-1, SOT1089 and SOT996-2 SOT1160-1

Table 4. Function table[1]

Supply voltage Input Input/output

VCC(A) VCC(B) OE An Bn

1.2 V to VCC(B) 1.65 V to 5.5 V L Z Z

1.2 V to VCC(B) 1.65 V to 5.5 V H input or output output or input

GND[2] GND[2] XZZ

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions Min Max Unit

VCC(A) supply voltage A 0.5 +6.5 V

VCC(B) supply voltage B 0.5 +6.5 V

VIinput voltage [1] 0.5 +6.5 V

VOoutput voltage Active mode [1][2][3] 0.5 VCCO +0.5 V

Power-down or 3-state mode [1] 0.5 +6.5 V

IIK input clamping current VI<0V 50 - mA

IOK output clamping current VO<0V 50 - mA

IOoutput current VO=0VtoV

CCO [2] -50 mA

ICC supply current ICC(A) or ICC(B) -100mA

IGND ground current 100 - mA

Tstg storage temperature 65 +150 C

Ptot total power dissipation Tamb =40 C to +125 C[4] -250mW

Product data sheet Rev. 4 — 23 January 2013 5 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

9. Recommended operating conditions

[1] The A and B sides of an unused I/O pair must be held in the same state, both at VCCI or both at GND.

[2] VCC(A) must be less than or equal to VCC(B).

10. Static characteristics

[1] VCCO is the supply voltage associated with the output.

[2] VCCI is the supply voltage associated with the input.

Table 6. Recommended operating conditions[1][2]

Symbol Parameter Conditions Min Max Unit

VCC(A) supply voltage A 1.2 3.6 V

VCC(B) supply voltage B 1.65 5.5 V

VIinput voltage 0 5.5 V

VOoutput voltage Power-down or 3-state mode;

VCC(A) = 1.2 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V

A port 0 3.6 V

B port 0 5.5 V

Tamb ambient temperature 40 +125 C

t/V input transition rise and fall rate VCC(A) = 1.2 V to 3.6 V;

VCC(B) =1.65Vto5.5V - 40 ns/V

Table 7. Typical static characteristics

At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 C.

Symbol Parameter Conditions Min Typ Max Unit

VOH HIGH-level

output voltage A port; VCC(A) = 1.2 V; IO=20 A-1.1-V

VOL LOW-level

output voltage A port; VCC(A) = 1.2 V; IO = 20 A-0.09-V

IIinput leakage

current OE input; VI = 0 V to 3.6 V; VCC(A) = 1.2 V to 3.6 V;

VCC(B) =1.65Vto5.5V -- 1A

IOZ OFF-state output

current A or B port; VO=0VtoV

CCO; VCC(A) = 1.2 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V

[1] -- 1A

IOFF power-off

leakage current A port; VI or VO = 0 V to 3.6 V;

VCC(A) =0V;V

CC(B) =0Vto5.5V -- 1A

B port; VI or VO = 0 V to 5.5 V;

VCC(B) =0V;V

CC(A) =0Vto3.6V -- 1A

ICC supply current VI = 0 V or VCCI; IO = 0 A [2]

ICC(A); VCC(A) = 1.2 V; VCC(B) = 1.65 V to 5.5 V - 0.05 - A

ICC(B); VCC(A) = 1.2 V; VCC(B) = 1.65 V to 5.5 V - 3.3 - A

ICC(A) + ICC(B); VCC(A) = 1.2 V; VCC(B) =1.65Vto5.5V - 3.5 - A

CIinput

capacitance OE input; VCC(A) = 1.2 V to 3.6 V; VCC(B) =1.65Vto5.5V - 1.0 - pF

CI/O input/output

capacitance A port; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V - 4.0 - pF

B port; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V - 7.5 - pF

Product data sheet Rev. 4 — 23 January 2013 6 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

Table 8. Typical supply current

At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25



VCC(A) VCC(B) Unit

1.8 V 2.5 V 3.3 V 5.0 V

ICC(A) ICC(B) ICC(A) ICC(B) ICC(A) ICC(B) ICC(A) ICC(B)

1.2 V101010101020101050nA

1.5 V10101010101010650nA

1.8 V10101010101010350nA

2.5 V- - 101010101040nA

3.3 V----10101010nA

Table 9. Static characteristics

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions 40 C to +85 C40 C to +125 CUnit

Min Max Min Max

VIH HIGH-level

input voltage A or B port and OE input [1]

VCC(A) = 1.2 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V 0.65VCCI - 0.65VCCI -V

VIL LOW-level

input voltage A or B port and OE input [1]

VCC(A) = 1.2 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V -0.35V

CCI -0.35V

CCI V

VOH HIGH-level

output voltage IO=20 A[2]

A port; VCC(A) = 1.4 V to 3.6 V VCCO  0.4 - VCCO  0.4 - V

B port; VCC(B) = 1.65 V to 5.5 V VCCO  0.4 - VCCO  0.4 - V

VOL LOW-level

output voltage IO=20A[2]

A port; VCC(A) = 1.4 V to 3.6 V - 0.4 - 0.4 V

B port; VCC(B) = 1.65 V to 5.5 V - 0.4 - 0.4 V

IIinput leakage

current OE input; VI = 0 V to 3.6 V;

VCC(A) = 1.2 V to 3.6 V;

VCC(B) =1.65Vto5.5V

-2-5A

IOZ OFF-state

output current A or B port; VO=0VorV

CCO;

VCC(A) = 1.2 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V

[2] -2-10 A

IOFF power-off

leakage

current

A port; VI or VO = 0 V to 3.6 V;

VCC(A) =0V;V

CC(B) =0Vto5.5V -2-10 A

B port; VI or VO = 0 V to 5.5 V;

VCC(B) =0V;V

CC(A) =0Vto3.6V -2-10 A

C, Figure 8 Figure 6 Figure 7

Product data sheet Rev. 4 — 23 January 2013 7 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

[1] VCCI is the supply voltage associated with the input.

[2] VCCO is the supply voltage associated with the output.

11. Dynamic characteristics

ICC supply current VI = 0 V or VCCI; IO = 0 A [1]

ICC(A)

OE = LOW;

VCC(A) = 1.4 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V

-3-15A

OE = HIGH;

VCC(A) = 1.4 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V

-3-20A

VCC(A) = 3.6 V; VCC(B) =0V - 2 - 15 A

VCC(A) = 0 V; VCC(B) =5.5V - 2-15 A

ICC(B)

OE = LOW;

VCC(A) = 1.4 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V

-5-15A

OE = HIGH;

VCC(A) = 1.4 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V

-5-20A

VCC(A) = 3.6 V; VCC(B) =0V - 2-15 A

VCC(A) = 0 V; VCC(B) =5.5V - 2 - 15 A

ICC(A) + ICC(B)

VCC(A) = 1.4 V to 3.6 V;

VCC(B) =1.65Vto5.5V -8-40A

Table 9. Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions 40 C to +85 C40 C to +125 CUnit

Min Max Min Max

Table 10. Typical dynamic characteristics for temperature 25 C[1]

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for waveforms see Figure 6 and Figure 7.

Symbol Parameter Conditions VCC(B) Unit

1.8 V 2.5 V 3.3 V 5.0 V

VCC(A) = 1.2 V; Tamb = 25 C

tpd propagation delay A to B 5.9 4.8 4.4 4.2 ns

B to A 5.6 4.8 4.5 4.4 ns

ten enable time OE to A, B 0.5 0.5 0.5 0.5 s

tdis disable time OE to A; no external load [2] 6.96.96.96.9ns

OE to B; no external load [2] 9.58.68.58.0ns

OE to A 81 69 83 68 ns

OE to B 81 69 83 68 ns

tttransition time A port 4.0 4.0 4.1 4.1 ns

B port 2.6 2.0 1.7 1.4 ns

°c, Figure 8 Figure 6 Figure 7 Figure 8 Figure 6 d Figure 7

Product data sheet Rev. 4 — 23 January 2013 8 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

[1] tpd is the same as tPLH and tPHL.

ten is the same as tPZL and tPZH.

tdis is the same as tPLZ and tPHZ.

tt is the same as tTHL and tTLH

[2] Delay between OE going LOW and when the outputs are actually disabled.

[3] Skew between any two outputs of the same package switching in the same direction.

tsk(o) output skew time between channels [3] 0.20.20.20.2ns

tWpulse width data inputs 15 13 13 13 ns

fdata data rate 70 80 80 80 Mbps

Table 10. Typical dynamic characteristics for temperature 25 C[1] …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for waveforms see Figure 6 and Figure 7.

Symbol Parameter Conditions VCC(B) Unit

1.8 V 2.5 V 3.3 V 5.0 V

Table 11. Dynamic characteristics for temperature range 40 C to +85 C[1]

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for wave forms see Figure 6 and Figure 7.

Symbol Parameter Conditions VCC(B) Unit

1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V

Min Max Min Max Min Max Min Max

VCC(A) = 1.5 V  0.1 V

tpd propagation

delay A to B 1.4 12.9 1.2 10.1 1.1 10.0 0.8 9.9 ns

B to A 0.9 14.2 0.7 12.0 0.4 11.7 0.3 13.7 ns

ten enable time OE to A, B - 1.0 - 1.0 - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] 1.0 11.9 1.0 11.9 1.0 11.9 1.0 11.9 ns

OE to B; no external load [2] 1.0 16.9 1.0 15.2 1.0 14.1 1.0 13.8 ns

OE to A - 320 - 260 - 260 - 280 ns

OE to B - 200 - 200 - 200 - 200 ns

tttransition

time A port 0.9 5.1 0.9 5.1 0.9 5.1 0.9 5.1 ns

B port 0.9 4.7 0.6 3.2 0.5 2.5 0.4 2.7 ns

tsk(o) output skew

time between channels [3] - 0.5 - 0.5 - 0.5 - 0.5 ns

tWpulse width data inputs 25 - 25 - 25 - 25 - ns

fdata data rate - 40 - 40 - 40 - 40 Mbps

VCC(A) = 1.8 V  0.15 V

tpd propagation

delay A to B 1.6 11.0 1.4 7.7 1.3 6.8 1.2 6.5 ns

B to A 1.5 12.0 1.3 8.4 1.0 7.6 0.9 7.1 ns

ten enable time OE to A, B - 1.0 - 1.0 - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] 1.0 11.0 1.0 11.0 1.0 11.0 1.0 11.0 ns

OE to B; no external load [2] 1.0 15.4 1.0 13.5 1.0 12.4 1.0 12.1 ns

OE to A - 260 - 230 - 230 - 230 ns

OE to B - 200 - 200 - 200 - 200 ns

tttransition

time A port 0.8 4.1 0.8 4.1 0.8 4.1 0.8 4.1 ns

B port 0.9 4.7 0.6 3.2 0.5 2.5 0.4 2.7 ns

Figule 8 Figure 6 d Figure 7

Product data sheet Rev. 4 — 23 January 2013 9 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

[1] tpd is the same as tPLH and tPHL.

ten is the same as tPZL and tPZH.

tdis is the same as tPLZ and tPHZ.

tt is the same as tTHL and tTLH.

[2] Delay between OE going LOW and when the outputs are actually disabled.

[3] Skew between any two outputs of the same package switching in the same direction.

tsk(o) output skew

time between channels [3] - 0.5 - 0.5 - 0.5 - 0.5 ns

tWpulse width data inputs 20 - 17 - 17 - 17 - ns

fdata data rate - 49 - 60 - 60 - 60 Mbps

VCC(A) = 2.5 V  0.2 V

tpd propagation

delay A to B - - 1.1 6.3 1.0 5.2 0.9 4.7 ns

B to A - - 1.2 6.6 1.1 5.1 0.9 4.4 ns

ten enable time OE to A, B - - - 1.0 - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] - - 1.0 9.2 1.0 9.2 1.0 9.2 ns

OE to B; no external load [2] - - 1.0 11.9 1.0 10.7 1.0 10.2 ns

OE to A - - - 200 - 200 - 200 ns

OE to B - - - 200 - 200 - 200 ns

tttransition

time A port - - 0.7 3.0 0.7 3.0 0.7 3.0 ns

B port - - 0.7 3.2 0.5 2.5 0.4 2.7 ns

tsk(o) output skew

time between channels [3] - - - 0.5 - 0.5 - 0.5 ns

tWpulse width data inputs - - 12 - 10 - 10 - ns

fdata data rate - - - 85 - 100 - 100 Mbps

VCC(A) = 3.3 V  0.3 V

tpd propagation

delay A to B - - - - 0.9 4.7 0.8 4.0 ns

B to A - - - - 1.0 4.9 0.9 3.8 ns

ten enable time OE to A, B - - - - - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] - - - - 1.0 9.2 1.0 9.2 ns

OE to B; no external load [2] - - - - 1.0 10.1 1.0 9.6 ns

OE to A - - - - - 260 - 260 ns

OE to B - - - - - 200 - 200 ns

tttransition

time A port - - - - 0.7 2.5 0.7 2.5 ns

B port - - - - 0.5 2.5 0.4 2.7 ns

tsk(o) output skew

time between channels [3] - - - - - 0.5 - 0.5 ns

tWpulse width data inputs - - - - 10 - 10 - ns

fdata data rate - - - - - 100 - 100 Mbps

Table 11. Dynamic characteristics for temperature range 40 C to +85 C[1] …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for wave forms see Figure 6 and Figure 7.

Symbol Parameter Conditions VCC(B) Unit

1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V

Min Max Min Max Min Max Min Max

Figure 8 Figure 6 d Figure 7

Product data sheet Rev. 4 — 23 January 2013 10 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

Table 12. Dynamic characteristics for temperature range 40 C to +125 C[1]

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for wave forms see Figure 6 and Figure 7.

Symbol Parameter Conditions VCC(B) Unit

1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V

Min Max Min Max Min Max Min Max

VCC(A) = 1.5 V  0.1 V

tpd propagation

delay A to B 1.4 15.9 1.2 13.1 1.1 13.0 0.8 12.9 ns

B to A 0.9 17.2 0.7 15.0 0.4 14.7 0.3 16.7 ns

ten enable time OE to A, B - 1.0 - 1.0 - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] 1.0 12.5 1.0 12.5 1.0 12.5 1.0 12.5 ns

OE to B; no external load [2] 1.0 18.1 1.0 16.2 1.0 14.9 1.0 14.6 ns

OE to A - 340 - 280 - 280 - 300 ns

OE to B - 220 - 220 - 220 - 220 ns

tttransition

time A port 0.9 7.1 0.9 7.1 0.9 7.1 0.9 7.1 ns

B port 0.9 6.5 0.6 5.2 0.5 4.8 0.4 4.7 ns

tsk(o) output skew

time between channels [3] - 0.5 - 0.5 - 0.5 - 0.5 ns

tWpulse width data inputs 25 - 25 - 25 - 25 - ns

fdata data rate - 40 - 40 - 40 - 40 Mbps

VCC(A) = 1.8 V  0.15 V

tpd propagation

delay A to B 1.6 14.0 1.4 10.7 1.3 9.8 1.2 9.5 ns

B to A 1.5 15.0 1.3 11.4 1.0 10.6 0.9 10.1 ns

ten enable time OE to A, B - 1.0 - 1.0 - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] 1.0 11.5 1.0 11.5 1.0 11.5 1.0 11.5 ns

OE to B; no external load [2] 1.0 16.5 1.0 14.5 1.0 13.3 1.0 12.7 ns

OE to A - 280 - 250 - 250 - 250 ns

OE to B - 220 - 220 - 220 - 220 ns

tttransition

time A port 0.8 6.2 0.8 6.1 0.8 6.1 0.8 6.1 ns

B port 0.9 5.8 0.6 5.2 0.5 4.8 0.4 4.7 ns

tsk(o) output skew

time between channels [3] - 0.5 - 0.5 - 0.5 - 0.5 ns

tWpulse width data inputs 22 - 19 - 19 - 19 - ns

fdata data rate - 45 - 55 - 55 - 55 Mbps

VCC(A) = 2.5 V  0.2 V

tpd propagation

delay A to B - - 1.1 9.3 1.0 8.2 0.9 7.7 ns

B to A - - 1.2 9.6 1.1 8.1 0.9 7.4 ns

ten enable time OE to A, B - - - 1.0 - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] - - 1.0 9.6 1.0 9.6 1.0 9.6 ns

OE to B; no external load [2] - - 1.0 12.6 1.0 11.4 1.0 10.8 ns

OE to A - - - 220 - 220 - 220 ns

OE to B - - - 220 - 220 - 220 ns

tttransition

time A port - - 0.7 5.0 0.7 5.0 0.7 5.0 ns

B port - - 0.7 4.6 0.5 4.8 0.4 4.7 ns

Figure 8 Figure 6 d Figure 7

Product data sheet Rev. 4 — 23 January 2013 11 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

[1] tpd is the same as tPLH and tPHL.

ten is the same as tPZL and tPZH.

tdis is the same as tPLZ and tPHZ.

tt is the same as tTHL and tTLH.

[2] Delay between OE going LOW and when the outputs are actually disabled.

[3] Skew between any two outputs of the same package switching in the same direction.

tsk(o) output skew

time between channels [3] - - - 0.5 - 0.5 - 0.5 ns

tWpulse width data inputs; - - 14 - 13 - 10 - ns

fdata data rate - - - 75 - 80 - 100 Mbps

VCC(A) = 3.3 V  0.3 V

tpd propagation

delay A to B - - - - 0.9 7.7 0.8 7.0 ns

B to A - - - - 1.0 7.9 0.9 6.8 ns

ten enable time OE to A, B - - - - - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] - - - - 1.0 9.5 1.0 9.5 ns

OE to B; no external load [2] - - - - 1.0 10.7 1.0 9.6 ns

OE to A - - - - - 280 - 280 ns

OE to B - - - - - 220 - 220 ns

tttransition

time A port - - - - 0.7 4.5 0.7 4.5 ns

B port - - - - 0.5 4.1 0.4 4.7 ns

tsk(o) output skew

time between channels [3] - - - - - 0.5 - 0.5 ns

tWpulse width data inputs - - - - 10 - 10 - ns

fdata data rate - - - - - 100 - 100 Mbps

Table 12. Dynamic characteristics for temperature range 40 C to +125 C[1] …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for wave forms see Figure 6 and Figure 7.

Symbol Parameter Conditions VCC(B) Unit

1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V

Min Max Min Max Min Max Min Max

LT:

Product data sheet Rev. 4 — 23 January 2013 12 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

[1] CPD is used to determine the dynamic power dissipation (PD in W).

PD=C

PD VCC2fiN+(CLVCC2fo) where:

fi= input frequency in MHz;

fo= output frequency in MHz;

CL= load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

(CLVCC2fo) = sum of the outputs.

[2] fi = 10 MHz; VI=GNDtoV

CC; tr = tf = 1 ns; CL = 0 pF; RL =  .

12. Waveforms

Table 13. Typical power dissipation capacitance

Voltages are referenced to GND (ground = 0 V).[1][2]

Symbol Parameter Conditions VCC(A) Unit

1.2 V 1.2 V 1.5 V 1.8 V 2.5 V 2.5 V 3.3 V

VCC(B)

1.8 V 5.0 V 1.8 V 1.8 V 2.5 V 5.0 V 3.3 V

5.0 V

Tamb = 25 C

CPD power

dissipation

capacitance

outputs enabled; OE = VCC(A)

Aport: (direction A to B) 5555555pF

Aport: (direction B to A) 8888888pF

B port: (direction A to B) 18 18 18 18 18 18 18 pF

B port: (direction B to A) 13 16 12 12 12 12 13 pF

outputs disabled; OE = GND

A port: (direction A to B) 0.12 0.12 0.04 0.05 0.08 0.08 0.07 pF

A port: (direction B to A) 0.01 0.01 0.01 0.01 0.01 0.01 0.01 pF

B port: (direction A to B) 0.01 0.01 0.01 0.01 0.01 0.01 0.01 pF

B port: (direction B to A) 0.07 0.09 0.07 0.07 0.05 0.09 0.09 pF

Measurement points are given in Table 14.

VOL and VOH are typical output voltage levels that occur with the output load.

Fig 6. Data input (An, Bn) to data output (Bn, An) propagation delay times

001aal918

tPLH

tPHL

Bn, An

output

An, Bn

input

GND

VOH

VOL

tTHL tTLH

90 %

10 %

* |H H' x l i W i , .

Product data sheet Rev. 4 — 23 January 2013 13 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

[1] VCCI is the supply voltage associated with the input and VCCO is the supply voltage associated with the output.

Measurement points are given in Table 14.

VOL and VOH are typical output voltage levels that occur with the output load.

Fig 7. Enable and disable times

001aal919

tPLZ

tPHZ

outputs

disabled outputs

enabled

outputs

enabled

output

LOW-to-OFF

OFF-to-LOW

output

HIGH-to-OFF

OFF-to-HIGH

OE input

VOH

VCCO

GND

VOL

GND

tPZL

tPZH

Table 14. Measurement points[1]

Supply voltage Input Output

VCCO VMVMVXVY

1.2 V 0.5VCCI 0.5VCCO VOL + 0.1 V VOH  0.1 V

1.5 V  0.1 V 0.5VCCI 0.5VCCO VOL + 0.1 V VOH  0.1 V

1.8 V  0.15 V 0.5VCCI 0.5VCCO VOL + 0.15 V VOH  0.15 V

2.5 V  0.2 V 0.5VCCI 0.5VCCO VOL + 0.15 V VOH  0.15 V

3.3 V  0.3 V 0.5VCCI 0.5VCCO VOL + 0.3 V VOH  0.3 V

5.0 V  0.5 V 0.5VCCI 0.5VCCO VOL + 0.3 V VOH  0.3 V

UH?

Product data sheet Rev. 4 — 23 January 2013 14 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

[1] VCCI is the supply voltage associated with the input.

[2] For measuring data rate, pulse width, propagation delay and output rise and fall measurements, RL = 1 M; for measuring enable and

disable times, RL = 50 k.

[3] VCCO is the supply voltage associated with the output.

Test data is given in Table 15.

All input pulses are supplied by generators having the following characteristics: PRR  10 MHz; ZO = 50 ; dV/dt  1.0 V/ns.

RL = Load resistance.

CL = Load capacitance including jig and probe capacitance.

VEXT = External voltage for measuring switching times.

Fig 8. Test circuit for measuring switching times

VMVM

10 %

90 %

0 V

negative

pulse

positive

pulse

0 V

VMVM

90 %

10 %

001aal920

VEXT

VCC

VIVO

DUT

CLRL

Table 15. Test data

Supply voltage Input Load VEXT

VCC(A) VCC(B) VI[1] t/V CLRL[2] tPLH, tPHL tPZH, tPHZ tPZL, tPLZ[3]

1.2 V to 3.6 V 1.65 V to 5.5 V VCCI  1.0ns/V 15pF 50k, 1 Mopen open 2VCCO

e Figure 9 S—IIi S—IIi

Product data sheet Rev. 4 — 23 January 2013 15 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

13. Application information

13.1 Applications

Voltage level-translation applications. The NTB0102 can be used to interface between

devices or systems operating at different supply voltages. See Figure 9 for a typical

operating circuit using the NTB0102.

Fig 9. Typical operating circuit

001aam487

1.8 V

SYSTEM

CONTROLLER

3.3 V

SYSTEM

1.8 V 3.3 V

0.1 μF 0.1 μF

CC(A)

DATA DATA

GND

NTB0102

CC(B)

Product data sheet Rev. 4 — 23 January 2013 16 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

13.2 Architecture

The architecture of the NTB0102 is shown in Figure 10. The device does not require an

extra input signal to control the direction of data flow from A to B or from B to A. In a static

state, the output drivers of the NTB0102 can maintain a defined output level, but the

output architecture is designed to be weak, so that they can be overdriven by an external

driver when data on the bus starts flowing in the opposite direction. The output of one-shot

circuits detect rising or falling edges on the A or B ports. During a rising edge, the

one-shot circuits turn on the PMOS transistors (T1, T3) for a short duration, accelerating

the LOW-to-HIGH transition. Similarly, during a falling edge, the one-shot circuits turn on

the NMOS transistors (T2, T4) for a short duration, accelerating the HIGH-to-LOW

transition. During output transitions the typical output impedance is 70  at VCCO = 1.2 V

to 1.8 V, 50  at VCCO = 1.8 V to 3.3 V and 40  at VCCO = 3.3 V to 5.0 V.

Fig 10. Architecture of NTB0102 I/O cell (one channel)

001aal921

ONE

SHOT

ONE

SHOT

ONE

SHOT

ONE

SHOT B

VCC(B)

VCC(A)

4 kΩ

Figure 11

Product data sheet Rev. 4 — 23 January 2013 17 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

13.3 Input driver requirements

For correct operation, the device driving the data I/Os of the NTB0102 must have a

minimum drive capability of 2 mA See Figure 11 for a plot of typical input current versus

input voltage.

13.4 Power-up

During operation VCC(A) must never be higher than VCC(B), however during power-up

VCC(A)  VCC(B) does not damage the device, so either power supply can be ramped up

first. There is no special power-up sequencing required. The NTB0102 includes circuitry

that disables all output ports when either VCC(A) or VCC(B) is switched off.

13.5 Enable and disable

An output enable input (OE) is used to disable the device. Setting OE = LOW causes all

I/Os to assume the high-impedance OFF-state. The disable time (tdis with no external

load) indicates the delay between when OE goes LOW and when outputs actually

become disabled. The enable time (ten) indicates the amount of time the user must allow

for one one-shot circuitry to become operational after OE is taken HIGH. To ensure the

high-impedance OFF-state during power-up or power-down, pin OE should be tied to

GND through a pull-down resistor, the minimum value of the resistor is determined by the

current-sourcing capability of the driver.

13.6 Pull-up or pull-down resistors on I/O lines

As mentioned previously the NTB0102 is designed with low static drive strength to drive

capacitive loads of up to 70 pF. To avoid output contention issues, any pull-up or

pull-down resistors used must be above 50 k. For this reason the NTB0102 is not

recommended for use in open drain driver applications such as 1-Wire or I2C-bus. For

these applications, the NTS0102 level translator is recommended.

VT: input threshold voltage of the NTB0102 (typically VCCI / 2).

VD: supply voltage of the external driver.

Fig 11. Typical input current versus input voltage graph

001aal922

/4 kΩ

−(V

− V

)/4 kΩ

small outline package; 8 leads; body w E©

Product data sheet Rev. 4 — 23 January 2013 18 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

14. Package outline

Fig 12. Package outline SOT505-2 (TSSOP8)

UNIT A1

max. A2A3bpLHELpwyv

ceD(1) E(1) Z(1) θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.15

0.00 0.95

0.75 0.38

0.22 0.18

0.08 3.1

2.9 3.1

2.9 0.65 4.1

3.9 0.70

0.35 8°

0°

0.13 0.10.20.5

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

0.47

0.33

SOT505-2 - - - 02-01-16

0.25

A2A1

(A3)

detail X

vMA

2.5 5 mm0

scale

TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm SOT505-2

1.1

pin 1 index

3L3 EL© 3 3 3 3 3 ‘ 'T""'T'T'T""'T"' 77743777773734.7777377 3 3

Product data sheet Rev. 4 — 23 January 2013 19 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

Fig 13. Package outline SOT833-1 (XSON8)

terminal 1

index area

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT833-1 - - -

MO-252

- - -

SOT833-1

07-11-14

07-12-07

DIMENSIONS (mm are the original dimensions)

XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1.95 x 0.5 mm

e1e1

0 1 2 mm

scale

Notes

1. Including plating thickness.

2. Can be visible in some manufacturing processes.

UNIT

mm 0.25

0.17 2.0

1.9 0.35

0.27

max b E

1.05

0.95

Dee

0.40

0.32

0.50.6

A(1)

max

0.5 0.04

8×

(2)

4×

(2)

i 1 We 7,,i,TrirW L ‘\‘ .iElg. 4 JDF‘W 1% rmmmm 1 :Dmmm E© «9742—31»

Product data sheet Rev. 4 — 23 January 2013 20 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

Fig 14. Package outline SOT996-2 (XSON8)

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOT996-2

sot996-2_po

07-12-21

12-11-20

Unit(1)

mm max

nom

min 0.5 0.05

0.00

2.1

1.9

3.1

2.9

0.5

0.3

0.15

0.05

0.6

0.4

0.5 1.5 0.05

Dimensions (mm are the original dimensions)

XSON8: plastic extremely thin small outline package; no leads;

8 terminals; body 3 x 2 x 0.5 mm SOT996-2

A1b

0.35

0.15

DEee

1LL

1L2v

0.1

0.05

0.1

0 1 2 mm

scale

terminal 1

index area

B A

detail X

AA1

eAC B

Product data sheet Rev. 4 — 23 January 2013 21 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

Fig 15. Package outline SOT1089 (XSON8)

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOT1089 MO-252

sot1089_po

10-04-09

10-04-12

Unit

mm max

nom

min

0.5 0.04 1.40

1.35

1.30

1.05

1.00

0.95 0.55 0.35 0.35

0.30

0.27

A(1)

Dimensions

Note

1. Including plating thickness.

2. Visible depending upon used manufacturing technology.

XSON8: extremely thin small outline package; no leads;

8 terminals; body 1.35 x 1 x 0.5 mm SOT1089

A1bL

0.40

0.35

0.32

0.20

0.15

0.12

DEee

0 0.5 1 mm

scale

terminal 1

index area

detail X

terminal 1

index area

(4×)(2)

(8×)(2)

EAL 4:» W \ >—-‘ g@ M

Product data sheet Rev. 4 — 23 January 2013 22 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

Fig 16. Package outline SOT1160-1 (XQFN10)

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOT1160-1 - - -

- - -

sot1160-1_po

09-12-28

09-12-29

Unit(1)

mm max

nom

min

0.5 0.05

0.00

0.25

0.20

0.15

1.5

1.4

1.3

1.9

1.8

1.7 0.4 0.45

0.40

0.35

0.55

0.50

0.45 0.05

Dimensions

Note

1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.

XQFN10: plastic, extremely thin quad flat package; no leads;

10 terminals; body 1.40 x 1.80 x 0.50 mm SOT1160-1

A1A3

0.127

bDEee

0.8

0.4

0.1

0.05

0 1 2 mm

scale

terminal 1

index area

detail X

A1A3

AC B

terminal 1

index area

10 8

Product data sheet Rev. 4 — 23 January 2013 23 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

15. Abbreviations

16. Revision history

Table 16. Abbreviations

Acronym Description

CDM Charged Device Model

DUT Device Under Test

ESD ElectroStatic Discharge

HBM Human Body Model

MM Machine Model

NMOS N-type Metal Oxide Semiconductor

PMOS P-type Metal Oxide Semiconductor

PRR Pulse Repetition Rate

Table 17. Revision history

Document ID Release date Data sheet status Change notice Supersedes

NTB0102 v.4 20130123 Product data sheet - NTB0102 v.3

Modifications: •For type number NTB0102GD XSON8U has changed to XSON8.

NTB0102 v.3 20111110 Product data sheet - NTB0102 v.2

Modifications: •Legal pages updated.

NTB0102 v.2 20110428 Product data sheet - NTB0102 v.1

NTB0102 v.1 20100922 Product data sheet - -

Product data sheet Rev. 4 — 23 January 2013 24 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

17. Legal information

17.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

17.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

17.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Semiconductors takes no

responsibility for the content in this document if provided by an information

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at the customer’s own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their applications

and products using NXP Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

: hitE:I/www.nxg.com salesaddresses®nx9£0m

Product data sheet Rev. 4 — 23 January 2013 25 of 26

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

17.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

18. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors NTB0102

Dual supply translating transceiver; auto direction sensing; 3-state

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 23 January 2013

Document identifier: NTB0102

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

19. Contents

1 General description. . . . . . . . . . . . . . . . . . . . . . 1

2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2

6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3

6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Functional description . . . . . . . . . . . . . . . . . . . 4

8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

9 Recommended operating conditions. . . . . . . . 5

10 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5

11 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7

12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Application information. . . . . . . . . . . . . . . . . . 15

13.1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13.2 Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . 16

13.3 Input driver requirements . . . . . . . . . . . . . . . . 17

13.4 Power-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

13.5 Enable and disable . . . . . . . . . . . . . . . . . . . . . 17

13.6 Pull-up or pull-down resistors on I/O lines . . . 17

14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 18

15 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 23

16 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 23

17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 24

17.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 24

17.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

17.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

17.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 25

18 Contact information. . . . . . . . . . . . . . . . . . . . . 25

19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

NTB0102 Datasheet by NXP USA Inc.

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