Name: G12P10TE
Brand: Goford Semiconductor
SKU: 3141-G12P10TE-ND
Price: 1.17829 CHF
Availability: InStock

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G12P10TE
DigiKey Part Number	3141-G12P10TE-ND
Manufacturer	Goford Semiconductor
Manufacturer Product Number	G12P10TE
Description	P-100V,-12A,RD(MAX)<200M@-10V,VT
Manufacturer Standard Lead Time	20 Weeks
Customer Reference
Detailed Description	P-Channel 100 V 12A (Tc) 40W (Tc) Through Hole TO-220
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 200mOhm @ 6A, 10V
Mfr Goford Semiconductor	Vgs(th) (Max) @ Id 3V @ 250µA
Series TrenchFET®	Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Packaging Tube	Vgs (Max) ±20V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 25 V
FET Type P-Channel	Power Dissipation (Max) 40W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 100 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 12A (Tc)	Supplier Device Package TO-220
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-220-3

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Tube

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Unit Price without VAT:	Fr.1.09000
Unit Price with VAT:	Fr.1.17829

G12P10TE