FF6MR20W2M1HB70BPSA1
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FF6MR20W2M1HB70BPSA1

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448-FF6MR20W2M1HB70BPSA1-ND
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FF6MR20W2M1HB70BPSA1
cms-description
FF6MR20W2M1HB70BPSA1
Manufacturer Standard Lead Time
10 Weeks
Customer Reference
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Mosfet Array 2000V (2kV) 160A (Tj) Chassis Mount
Datasheet
 Datasheet
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FF6MR20W2M1HB70BPSA1 Models
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Type
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Select All
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Manufacturer
Infineon Technologies
Series
Packaging
Tray
Part Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
2000V (2kV)
Current - Continuous Drain (Id) @ 25°C
160A (Tj)
Rds On (Max) @ Id, Vgs
8.1mOhm @ 160A, 18V
Vgs(th) (Max) @ Id
5.15V @ 112mA
Gate Charge (Qg) (Max) @ Vgs
780nC @ 3V
Input Capacitance (Ciss) (Max) @ Vds
24100pF @ 1.2kV
Power - Max
-
Operating Temperature
-40°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-
Product Questions and Answers

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In-Stock: 9
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Tray
cms-quantityUnit Pricecms-ext-price
1Fr.174.42000Fr.174.42
15Fr.165.61000Fr.2,484.15
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Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:Fr.174.42000
Unit Price with VAT:Fr.188.54802