N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-3-41
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IMW65R048M1HXKSA1

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448-IMW65R048M1HXKSA1-ND
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IMW65R048M1HXKSA1
cms-description
MOSFET 650V NCH SIC TRENCH
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N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-3-41
Datasheet
 Datasheet
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IMW65R048M1HXKSA1 Models
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Vgs(th) (Max) @ Id
5.7V @ 6mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 18 V
Series
Vgs (Max)
+23V, -5V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
1118 pF @ 400 V
Part Status
Not For New Designs
Power Dissipation (Max)
125W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO247-3-41
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
18V
Base Product Number
Rds On (Max) @ Id, Vgs
64mOhm @ 20.1A, 18V
Environmental & Export Classifications
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Additional Resources
Substitutes (1)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
MSC035SMA070BMicrochip Technology235MSC035SMA070B-NDFr.8.21000Similar
In-Stock: 252
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Not recommended for new design, minimums may apply cms-view-ph0
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Tube
QuantityUnit Pricecms-ext-price
1Fr.7.81000Fr.7.81
30Fr.4.59133Fr.137.74
120Fr.3.88608Fr.466.33
510Fr.3.36949Fr.1,718.44
1,020Fr.3.28728Fr.3,353.03
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Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:Fr.7.81000
Unit Price with VAT:Fr.8.44261