N-Channel 650 V 38A (Tc) 153W (Tc) Through Hole PG-TO247-4-8
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IMZA65R050M2HXKSA1

DigiKey Part Number
448-IMZA65R050M2HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZA65R050M2HXKSA1
Description
SILICON CARBIDE MOSFET
Manufacturer Standard Lead Time
61 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 38A (Tc) 153W (Tc) Through Hole PG-TO247-4-8
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
5.6V @ 3.7mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 18 V
Series
Vgs (Max)
+23V, -7V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 400 V
Part Status
Active
Power Dissipation (Max)
153W (Tc)
FET Type
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO247-4-8
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Base Product Number
Rds On (Max) @ Id, Vgs
46mOhm @ 18.2A, 20V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 633
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All prices are in CHF
Tube
QuantityUnit PriceExt Price
1Fr.8.24000Fr.8.24
30Fr.4.80600Fr.144.18
120Fr.4.05183Fr.486.22
510Fr.3.49949Fr.1,784.74
1,020Fr.3.29805Fr.3,364.01
2,010Fr.3.13214Fr.6,295.60
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:Fr.8.24000
Unit Price with VAT:Fr.8.90744