Name: IPB60R080P7ATMA1
Brand: Infineon Technologies
SKU: IPB60R080P7ATMA1TR-ND
Price: 4.52939 CHF
Availability: InStock

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IPB60R080P7ATMA1
DigiKey Part Number	IPB60R080P7ATMA1TR-ND - Tape & Reel (TR) IPB60R080P7ATMA1CT-ND - Cut Tape (CT) IPB60R080P7ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPB60R080P7ATMA1
Description	MOSFET N-CH 600V 37A D2PAK
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 37A (Tc) 129W (Tc) Surface Mount PG-TO263-3
Datasheet	Datasheet
EDA/CAD Models	IPB60R080P7ATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 590µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Series CoolMOS™ P7	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 400 V
Part Status Active	Power Dissipation (Max) 129W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 600 V	Supplier Device Package PG-TO263-3
Current - Continuous Drain (Id) @ 25°C 37A (Tc)	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPB60R080
Rds On (Max) @ Id, Vgs 80mOhm @ 11.8A, 10V