Bipolar (BJT) Transistor NPN 50 V 2 A 150MHz 800 mW Through Hole TP
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2SD1801S-E

DigiKey Part Number
2SD1801S-EOS-ND
Manufacturer
Manufacturer Product Number
2SD1801S-E
Description
TRANS NPN 50V 2A TP
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 50 V 2 A 150MHz 800 mW Through Hole TP
Datasheet
 Datasheet
EDA/CAD Models
2SD1801S-E Models
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA, 2V
Mfr
Power - Max
800 mW
Packaging
Bulk
Frequency - Transition
150MHz
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
2 A
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Voltage - Collector Emitter Breakdown (Max)
50 V
Supplier Device Package
TP
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 1A
Base Product Number
Current - Collector Cutoff (Max)
100nA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Obsolete
This product is no longer manufactured.