Bipolar (BJT) Transistor NPN 20 V 5 A 120MHz 1 W Through Hole TP
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2SD1805G-E

DigiKey Part Number
2SD1805G-E-ND
Manufacturer
Manufacturer Product Number
2SD1805G-E
Description
TRANS NPN 20V 5A TP
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 20 V 5 A 120MHz 1 W Through Hole TP
Datasheet
 Datasheet
EDA/CAD Models
2SD1805G-E Models
Product Attributes
Filter Similar Products
Show Empty Attributes
Category
DC Current Gain (hFE) (Min) @ Ic, Vce
280 @ 500mA, 2V
Mfr
Power - Max
1 W
Packaging
Bulk
Frequency - Transition
120MHz
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
5 A
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Voltage - Collector Emitter Breakdown (Max)
20 V
Supplier Device Package
TP
Vce Saturation (Max) @ Ib, Ic
500mV @ 60mA, 3A
Base Product Number
Current - Collector Cutoff (Max)
100nA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Obsolete
This product is no longer manufactured.