Name: IRFBG30PBF
Brand: Vishay Siliconix
SKU: IRFBG30PBF-ND
Price: 3.243 CHF
Availability: InStock

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IRFBG30PBF
DigiKey Part Number	IRFBG30PBF-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	IRFBG30PBF
Description	MOSFET N-CH 1000V 3.1A TO220AB
Manufacturer Standard Lead Time	26 Weeks
Customer Reference
Detailed Description	N-Channel 1000 V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet	Datasheet
EDA/CAD Models	IRFBG30PBF Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Packaging Tube	Vgs (Max) ±20V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 980 pF @ 25 V
FET Type N-Channel	Power Dissipation (Max) 125W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 1000 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)	Supplier Device Package TO-220AB
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-220-3
Rds On (Max) @ Id, Vgs 5Ohm @ 1.9A, 10V	Base Product Number IRFBG30

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