Single Bipolar Transistors

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
TRANS NPN 40V 0.2A SOT23-3
onsemi
110,321
In Stock
1 : Fr.0.10000
Cut Tape (CT)
3,000 : Fr.0.02020
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
300 mW
300MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
SOT 23-3
TRANS NPN 40V 0.2A SOT23-3
onsemi
53,594
In Stock
1 : Fr.0.10000
Cut Tape (CT)
10,000 : Fr.0.01645
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
300 mW
300MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
X2-DFN1006-3
TRANS NPN 40V 0.2A X1-DFN1006-3
Diodes Incorporated
7,862
In Stock
1 : Fr.0.41000
Cut Tape (CT)
10,000 : Fr.0.07763
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
250 mW
300MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
3-UFDFN
X1-DFN1006-3
131,601
In Stock
1 : Fr.0.13000
Cut Tape (CT)
3,000 : Fr.0.02474
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Obsolete
NPN
200 mA
40 V
300mV @ 5mA, 50mA
50nA
100 @ 10mA, 1V
300 mW
250MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
PG-SOT23
TRANS NPN 40V 0.2A PG-SOT23
Infineon Technologies
21,419
In Stock
1 : Fr.0.21000
Cut Tape (CT)
3,000 : Fr.0.04259
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Last Time Buy
NPN
200 mA
40 V
300mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 1V
330 mW
300MHz
150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
SOT 23-3
TRANS NPN 40V 0.2A SOT23-3
onsemi
518
In Stock
1 : Fr.0.10000
Cut Tape (CT)
10,000 : Fr.0.01546
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
300 mW
300MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
X2-DFN1006-3
TRANS NPN 40V 0.2A X1-DFN1006-3
Diodes Incorporated
351
In Stock
1 : Fr.0.19000
Cut Tape (CT)
3,000 : Fr.0.03396
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
250 mW
300MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
3-UFDFN
X1-DFN1006-3
SOT 23-3
TRANS NPN 40V 0.2A SOT23-3
onsemi
0
In Stock
Check Lead Time
1 : Fr.0.10000
Cut Tape (CT)
3,000 : Fr.0.01902
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
300 mW
300MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
PG-SOT23
TRANS NPN 40V 0.2A PG-SOT23
Infineon Technologies
0
In Stock
50,000 : Fr.0.01558
Tape & Reel (TR)
-
Tape & Reel (TR)
Discontinued at Digi-Key
NPN
200 mA
40 V
300mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 1V
330 mW
300MHz
150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
0
In Stock
Check Lead Time
10,000 : Fr.0.02844
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
NPN
200 mA
40 V
-
-
-
150 mW
-
-
-
-
Surface Mount
SC-101, SOT-883
DFN1006-3
Showing
of 10

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion. BJTs come in two varieties - NPN and PNP - which refer to the sequence of semiconductor layers that make up the transistor. NPN transistors consist of a thin P-type semiconductor between two N-type materials, while PNP transistors have an N-type semiconductor between two P-types. This gives the two types opposite polarity operation. NPN transistors sink current, while PNP transistors source current.