Some additional NOR Flash memory terms are depicted in this slide. Dynamic Random Access Memory (DRAM) is a type of volatile memory which stores each bit of data in a storage capacitor and must be constantly refreshed to keep its charge. HyperRAM is a self-refresh DRAM with the HyperBus interface. This is another product that is being developed with the HyperBus interface. Program Erase is an operation required to charge a memory cell state from a 1 to a 0, or a 0 to a 1, respectively. Sector in a NOR Flash device is a physical block of memory locations with consecutive addresses. For example, there can be a 256 Kb sector with a 256 Megabit memory. That is actually the Sector Size for HyperFlash. Sector Erase is an operation in which all of the bytes in a Sector are erased simultaneously and this needs to be done prior to programming. Chip erase is an operation where memory cells in a NOR Flash chip are erased prior to the programming.