Datenblatt für MSC2712 G,Y T1 von onsemi

0N Semiconductor® www.0nsemi.com
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 7 Publication Order Number:
MSC2712GT1/D
1
MSC2712GT1G,
MSC2712YT1G
General Purpose
Amplifier Transistor
NPN Surface Mount
Features
Moisture Sensitivity Level: 1
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Collector−Base Voltage V(BR)CBO 60 Vdc
Collector−Emitter Voltage V(BR)CEO 50 Vdc
Emitter−Base Voltage V(BR)EBO 7.0 Vdc
Collector Current − Continuous IC100 mAdc
Collector Current − Peak IC(P) 200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation PD200 mW
Junction Temperature TJ150 °C
Storage Temperature Tstg 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
SC−59
CASE 318D
STYLE 1
MARKING DIAGRAMS
12G MG
G
12Y MG
G
12M, 12Y = Specific Device Code
M = Date Code
G= Pb−Free Package
Device Package Shipping
ORDERING INFORMATION
MSC2712GT1G SC−59
(Pb−Free)
3000 / Tape & Ree
l
MSC2712YT1G SC−59
(Pb−Free)
3000 / Tape & Ree
l
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
MSC2712GT1G, MSC2712YT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 − Vdc
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0) V(BR)EBO 7.0 − Vdc
Collector−Base Cutoff Current
(VCB = 45 Vdc, IE = 0) ICBO 0.1 mAdc
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
ICEO
0.1
2.0
1.0
mAdc
mAdc
mAdc
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc) MSC2712GT1G
MSC2712YT1G
hFE
200
120 400
240
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc) VCE(sat) 0.5 Vdc
CurrentGain − Bandwidth Product
(IC = 1 mA, VCE = 10.0 V, f = 10 MHz) fT50 MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, D.C. 2%.
55(53!) versus lc
MSC2712GT1G, MSC2712YT1G
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Collector Saturation Voltage
012 3 4 65
280
0
40
I
C
, COLLECTOR CURRENT (mA)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
80
120
160
Figure 2. DC Current Gain
1 10 100 1000
1000
10
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
100
TA = 25°C
6.0 mA
1.0 mA
IB = 0.2 mA
VCE = 1.0 V
TA = 100°C
−25°C
25°C
Figure 3. DC Current Gain
1 10 1000100
1000
10
h
FE
, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
100
Figure 4. VCE(sat) versus IC
1 10 100 1000
1
0.01
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(V)
IC, COLLECTOR CURRENT (mA)
0.1
IC/IB = 10
TA = 100°C
−25°C
25°C
TA = 100°C
−25°C
25°C
Figure 5. V
BE(sat)
versus I
C
1 10 1000100
10
0.1
BASE−EMITTER SATURATION
VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
1
Figure 6. Base−Emitter Voltage
0 0.1
10,000
IB, BASE CURRENT (mA)
VBE, BASE−EMITTER VOLTAGE (V)
0.1
COMMON EMITTER
VCE = 6 V TA = 100°C
−25°C
25°C
TA = 25°C
IC/IB = 10
1
10
100
1000
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
5.0 mA 3.0 mA
200
240 2.0 mA
0.5 mA
VCE = 6.0 V
Thermal Lmn
MSC2712GT1G, MSC2712YT1G
www.onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 7. NPN Safe Operating Area
0.001
0.01
0.1
10
0.1 1 10 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
NPN
100 ms 1 ms
Thermal Limit
10 ms
1
Single Pulse Test at TA = 25°C
zau 30m 25m U ak¢ ¢ L and
MSC2712GT1G, MSC2712YT1G
www.onsemi.com
5
PACKAGE DIMENSIONS
SC
*
59
CASE 318D*
04
ISSUE H
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
e
A1
b
A
E
D
2
3
1
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2.4
0.094
0.95
0.037
0.95
0.037
1.0
0.039
0.8
0.031 SCALE 10:1
*For additional information on our Pb *Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
AMIN NOM MAX MIN
MILLIMETERS
1.00 1.15 1.30 0.039
INCHES
A1 0.01 0.06 0.10 0.001
b0.35 0.43 0.50 0.014
c0.09 0.14 0.18 0.003
D2.70 2.90 3.10 0.106
E1.30 1.50 1.70 0.051
e1.70 1.90 2.10 0.067
L0.20 0.40 0.60 0.008
2.50 2.80 3.00 0.099
0.045 0.051
0.002 0.004
0.017 0.020
0.005 0.007
0.114 0.122
0.059 0.067
0.075 0.083
0.016 0.024
0.110 0.118
NOM MAX
HE
ǒmm
inchesǓ
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