Datenblatt für NSD914XV2 von onsemi

1 ON Semiconductor® www.0nsemi.com o—H—o 0 {a
© Semiconductor Components Industries, LLC, 2012
August, 2018 − Rev. 5 1Publication Order Number:
NSD914XV2T1/D
NSD914XV2
High-Speed
Switching Diode
Features
•High−Speed Switching Applications
•Lead Finish: 100% Matte Sn (Tin)
•Qualified Maximum Reflow Temperature: 260°C
•Extremely Small SOD−523 Package
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Reverse Voltage VR100 V
Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD200
1.57 mW
mW/°C
Thermal Resistance Junction-to-Ambient RqJA 635 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to
150 °C
1. FR−4 @ Minimum Pad.
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IBR = 100 mAdc) V(BR) 100 − Vdc
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
IR−
−25
5.0 nAdc
mAdc
Diode Capacitance
(VR = 0 V, f = 1.0 MHz) CD− 4.0 pF
Forward Voltage
(IF = 10 mAdc) VF− 1.0 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc) trr − 4.0 ns
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1
CATHODE 2
ANODE
Device Package Shipping†
ORDERING INFORMATION
SOD−523
CASE 502
5D = Specific Device Code
M = Date Code
G= Pb−Free Package
MARKING
DIAGRAM
1
2
5D MG
G
12
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NSD914XV2T1G SOD−523
(Pb−Free) 3000 / Tape &
Reel
(Note: Microdot may be in either location)
NSD914XV2T5G SOD−523
(Pb−Free) 8000 / Tape &
Reel
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NSD914XV2
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2
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820 Ω
0.1 μF
DUT
VR
100 μH
0.1 μF
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
1.0
10
100
0.1
Figure 3. Leakage Current
VR, REVERSE VOLTAGE (VOLTS)
10
0
I
1.0
0.1
0.001
0.01
10 20 30 40 50
I
1.0 1.20.2 0.4 0.6 0.8
Figure 4. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
0
C
0.68
0.64
0.60
0.52
0.56
2.0 4.0 6.0 8.0
, FORWARD CURRENT (mA)
F
TA = 85°CTA = -40°C
TA = 25°C
, REVERSE CURRENT ( A)
Rm
, DIODE CAPACITANCE (pF)
D
TA = 25°C
TA = 55°C
TA = 85°C
TA = 150°C
TA = 125°C
MECHANICAL CASE OUTLINE 0N Semiwndudw" PACKAGE DIMENSIONS 2 2 50137523 9 9 CASE 502701 a ‘ ISSUE E DATE 28 SEP 2010 STVLE 1 STYLE 2 SCALE 4:| NOTES ‘ D‘MENS‘ONING AND mLERANcws PER ASME v14 SM. 159» 2 CONTROLUNG mMENsm MILUMEIERS 3 MAXIMUM LEAD TmcKNEss wcmDEs LEAD FINISH MINIMUM LEAD TmcKNEss ‘5 ME MMMUM IHICKNESS OF BASE MATENAL 4 D‘MENS‘ONS D AND E DO Not wcmoE MOLD FLASH PROV musxows. 0R GATE EURRS mmmzas m mu MOM m A use DEB am a n25 Dan (:35 1: am 014 L120 j a He 12a mm a m Dan can L A as me 150 mm L anEF L2 m5‘ Dzn‘ L125 cTL H; 4-1 GENERIC SIDE VIEW MARKING DIAGRAM‘ 2XL [[Ixxsj E xx: 3 r 2 1 2 STVLE | STVLE 2 E E xx : Specmc Dewce Code M Dale Code 2x L2 a‘ Le BOTTOM VIEW “This informauon IS generic. Please relay Io aewoe dala sheeuov actual pan marking, Pb-Fvee mmcamr, “G“ or microdot “ RECOMMENDED may or may nol be present SOLDERING FOOTPRINT‘ SWLEI sWLEz 2x 150 mm cAvHoDuPoumwsAMm NaPoLAmw 0.4a 2X 2 ANanE ,7 7‘7 —‘ 040 x i PACKAGE/L OUTUNE DIMENSION MMIMETERS “Fol addmona‘ Infovmahon on our Pb-Fvee strategy and soldenng dams, please aowmoaa the ON Semiconducmr Soldenng and Mounting Techniques Relevance Manual, SOLDERRM/D ON Samaanaaaw and J aaaamayka a. Samanaaaxar Campanaaa .naaaaaa. LLC aaa ON Samaanaaaxa ar us aaaaaanaa m ma amiaa sxaxaa Mara. may aaamaa ON Samaanaaaxar Haw ma "gm [a maka ananaaa Wan. Wa. nanaa [a any mama ham ON Sam‘aaaaaaay makaa "a wanam. raaraaamaaan a, aaaramaa ragarama ma Mam.Y a. ma aaaaaa .ar anY pamcu‘sv aaraaaa aaaa ON aamaaaaaaw aaaaam any ham ans.mg aw ma aaaaaaan a. aaa a. anY aaaaam am. and aaaamaany dlsc‘axms any and an “away mc‘udmg wxlham mam spasm cansequenha‘ a! museum damages ON Semxmnduclar dues na| wmey any hcense under Ms ps|em nghl: Ivar ma ngma 0| alhers
SOD−523
CASE 502−01
ISSUE E
DATE 28 SEP 2010
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS.
XX = Specific Device Code
M Date Code
E
D
−X−
−Y−
b2X
M
0.08 X Y
A
H
c
DIM MIN NOM MAX
MILLIMETERS
D1.10 1.20 1.30
E0.70 0.80 0.90
A0.50 0.60 0.70
b0.25 0.30 0.35
c0.07 0.14 0.20
L0.30 REF
H1.50 1.60 1.70
12
XX
12
1
2
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
SCALE 4:1
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
M
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
NO POLARITY
STYLE 1 STYLE 2
STYLE 1 STYLE 2
XX
12
M
1
2
E
E
RECOMMENDED
TOP VIEW
SIDE VIEW
2X
BOTTOM VIEW
L2
L
2X
2X
0.48
0.40
2X
1.80
DIMENSION: MILLIMETERS
PACKAGE
OUTLINE
L2 0.15 0.20 0.25
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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