Datenblatt für IXX(K,X)110N65B4H1 von IXYS

IXYS
©2019 IXYS CORPORATION, All Rights Reserved
XPTTM 650V GenX4TM
w/ Sonic Diode
IXXK110N65B4H1
IXXX110N65B4H1
VCES = 650V
IC110 = 110A
VCE(sat) 


2.10V
tfi(typ) = 43ns
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 175°C 650 V
VCGR TJ = 25°C to 175°C, RGE = 1M 650 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C (Chip Capability) 250 A
ILRMS Terminal Current Limit 160 A
IC110 TC = 110°C 110 A
IF110 TC = 110°C 78 A
ICM TC = 25°C, 1ms 570 A
SSOA VGE = 15V, TVJ = 150°C, RG = 2 ICM = 220 A
(RBSOA) Clamped Inductive Load @VCE VCES
tsc VGE = 15V, VCE = 360V, TJ = 150°C 10 μs
(SCSOA) RG = 82, Non Repetitive
PCTC = 25°C 880 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
DS100502D(4/19 )
Extreme Light Punch Through
IGBT for 10-30kHz Switching
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250A, VGE = 0V 650 V
VGE(th) IC= 250A, VCE = VGE 4.0 6.5 V
ICES VCE = VCES, VGE = 0V 25 A
TJ = 150C 3 mA
IGES VCE = 0V, VGE = 20V 100 nA
VCE(sat) IC= 110A, VGE = 15V, Note 1 1.72 2.10 V
TJ = 150C 2.05 V
Features
Optimized for 10-30kHz Switching
Square RBSOA
Short Circuit Capability
Anti-Parallel Sonic Diode
High Current Handling Capability
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
G = Gate E = Emitter
C = Collector Tab = Collector
TO-264 (IXXK)
E
G
C
PLUS247 (IXXX)
G
Tab
Tab
E
C
G
L'I IXYS % } }
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK110N65B4H1
IXXX110N65B4H1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 30 52 S
Cies 5500 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 470 pF
Cres 80 pF
Qg(on) 183 nC
Qge IC = 110A, VGE = 15V, VCE = 0.5 • VCES 32 nC
Qgc 83 nC
td(on) 26 ns
tri 40 ns
Eon 2.20 mJ
td(off) 146 ns
tfi 43 ns
Eoff 1.05 1.70 mJ
td(on) 25 ns
tri 40 ns
Eon 3.00 mJ
td(off) 140 ns
tfi 110 ns
Eoff 2.16 mJ
RthJC 0.17 °C/W
RthCS 0.15 °C/W
Inductive load, TJ = 150°C
IC = 55A, VGE = 15V
VCE = 400V, RG = 2
Note 2
Reverse Sonic Diode (FRD)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
VF IF = 100A, VGE = 0V, Note 1 1.7 2.3 V
TJ = 150C 1.8 V
IRM 95 A
trr 100 ns
RthJC 0.38 C/W
IF = 100A, VGE = 0V, TJ = 150C
-diF/dt = 1500A/sVR = 300V
Inductive load, TJ = 25°C
IC = 55A, VGE = 15V
VCE = 400V, RG = 2
Note 2
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
VCE News a g m u <2 vge="" -="" vans=""><3 f...—="" 725="" a="" 25="" 50="" n="" -="" degree="" ©2o1sw="">
©2019 IXYS CORPORATION, All Rights Reserved
IXXK110N65B4H1
IXXX110N65B4H1
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
40
80
120
160
200
00.5 11.5 22.5 33.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
10V
9V
11V
7V
8V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
50
100
150
200
250
300
350
400
450
500
0 2 4 6 8 1012141618202224
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
10V
11V
13V
12V
8V
9V
7V
14V
Fig. 3. Output Characteristics @ T
J
= 150
o
C
0
40
80
120
160
200
00.511.522.533.544.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
14V
13V
10V
8V
9V
7V
11V
12V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 110A
I
C
= 55A
I
C
= 220A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 220A
T
J
= 25
o
C
110A
55A
Fig. 6. Input Admittance
0
50
100
150
200
250
300
350
4 5 6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
I
C
-
Amperes
T
J
= - 40
o
C
25
o
C
T
J
= 150
o
C
E i g > V’ L ‘ a: 1 > a) 0 50 <00><50 200="" 250="" 000="" 350="" g="" ic="" -="" ampeves="" 2w="" 2m="" 1m="" \="" e="" \\="" g="" e="" 120="">< \="" 2="" 30="" w="" 7="" z="" m="" a="" 0=""><00 9.="" 11.="" maximum="" transiem="" thermal="" 0="" 3="" m="" ,="" 0:05="" i="" \="" 0:02="" x="" e="" 0:01="" n="" 0="" m="" n="" z="" 005="" n="" z="" 002="" n="" z="" 00.="" sum="" mm="" (mm="" ‘="" evds="" ‘="" e705="" ‘="" e04="" 1="" e03="" 0="" e02="" pu‘se="" wmm="" -="" seconds="" ixvs="" reserves="" the="" ngm="" to="" change="" meus‘="" test="" commons,="" and="" dlmeflsmfls.="">
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK110N65B4H1
IXXX110N65B4H1
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
AAAAA
0.3
D = t
p
/ T
t
p
T
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
Single Pulse
D = 0.01
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
0 50 100 150 200 250 300 350
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40
o
C
25
o
C
150
o
C
Fig. 10. Reverse-Bias Safe Operating Area
0
40
80
120
160
200
240
100 200 300 400 500 600 700
V
CE
- Volts
I
C
- Amperes
T
J
= 150
o
C
R
G
= 2
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 325V
I
C
= 110A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
Cies
Coes
Cres
' IXYS Em——— _ ___ 150°C VuE :15v v5E , 400v / \ \\‘A \\\\ £944le James \\\ Eon-M James \\\\ \\\\ 50 RB - Ohms 150 160 Nanasecands Eon - M memes 40 20 140 120 200 120 mo mo 0 § 2 a 8 a m z Mn I spuaoasamz N- ““1”; \i \ I, I 40 120 20 mo 0 50 55 an 65 7o 75 so 85 go 95 mo ms 110 lc-Amperes ©2o1sw>
©2019 IXYS CORPORATION, All Rights Reserved
IXXK110N65B4H1
IXXX110N65B4H1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
6
7
2 4 6 8 10 12 14 16
R
G
- Ohms
E
off
- MilliJoules
0
2
4
6
8
10
12
14
E
on
- MilliJoules
E
off
E
on
T
J
= 150
o
C , V
GE
= 15V
V
CE
= 400V
I
C
= 55A
I
C
= 110A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
180
2 3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
t
f i
- Nanoseconds
50
100
150
200
250
300
350
400
450
500
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 150
o
C, V
GE
= 15V
V
CE
= 400V
I
C
= 110A
I
C
= 55A
Fig. 13. Inductive Switching Energy Loss v s.
Collector Current
0
1
2
3
4
5
6
50 55 60 65 70 75 80 85 90 95 100 105 110
I
C
- Amperes
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- MilliJoules
E
off
E
on
R
G
= 2
Ω ,
V
GE
= 15V
V
CE
= 400V T
J
= 150
o
C
T
J
= 25
o
C
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
1
2
3
4
5
6
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- MilliJoules
E
off
E
on
R
G
= 2
Ω ,
V
GE
= 15V
V
CE
= 400V
I
C
= 55A
I
C
= 110A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
20
40
60
80
100
120
140
50 55 60 65 70 75 80 85 90 95 100 105 110
I
C
- Amperes
t
f i
- Nanoseconds
100
120
140
160
180
200
220
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
140
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanosecond
s
80
100
120
140
160
180
200
220
240
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 55A, 110A
150 ln-Nannsecnnds In A Nanosecnnds 200 m, \c g l ln-Nannsecnnds 25 IXVS Reserves the ngm to Change meus‘ Test Commons, and DImeflS‘OHS. mo MD 120 mo an an an 20
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK110N65B4H1
IXXX110N65B4H1
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
180
50 55 60 65 70 75 80 85 90 95 100 105 110
I
C
- Amperes
t
r i
- Nanosecond
s
15
18
21
24
27
30
33
36
39
42
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
40
80
120
160
200
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanosecond
s
10
20
30
40
50
60
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 110A
I
C
= 55A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
20
40
60
80
100
120
140
160
180
200
2 3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
t
r i
- Nanosecond
s
10
20
30
40
50
60
70
80
90
100
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 150
o
C, V
GE
= 15V
V
CE
= 400V
I
C
= 55A
I
C
= 110A
:I IXYS 4L <75 15="" _\="" ‘5“="" m="" :="" 25‘0/="" tw="" :="" {sd‘c=""><25 a="" a="" ‘2="" g="" a="" t="" me="" e="" o="" b="" 75="" 50="" a="" 25="" a="" a="" 0="" o="" 5="" |="" 5="" 2="" 2="" 5="" 3="" 1000="" vf="" '="" [v]="" ‘="" \="" m="" :="" 150°c="" ‘f="" :="" 2°“="" \="" v="" 00v="" 120="" 300="" 100a="" 250="" me="" e="" e="" 5="" t="" 200="" 5="" 50a="" —’="" ’="" so="" 150="" ¥="" so="" \="" we="" 40="" 50="" man="" 1200="" 1400="" man="" 1mm="" 2000="" mm="" mm="" mm="" mm="" ‘8="" wm="" [m15]="" mam="" [a/us]="" 4="" r="" fl="" 1="" a="" g="" w="" __’_’-/="" 2="" o="" m="" 7="">< 50a="" 0="" 0="" am="" man="" 1200="" 1400="" man="" man="" 2000="">< 505="" mm="" was="">< em="">< em="" mf/m="" [a/us]="" pulse="" wmm="" -="" seconds="" ©2o1sw="">
©2019 IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_110N65B4 (E8-RZ43) 4-12-19-A
IXXK110N65B4H1
IXXX110N65B4H1
Fig. 21. Typ. Forward characteristics
0
25
50
75
100
125
150
175
200
0 0.5 1 1.5 2 2.5 3
V
F
- [V]
I
F
[A]
T
VJ
= 25
o
C
T
VJ
= 150
o
C
Fig. 22. Typ. Reverse Recovery Charge Q
rr
vs. -di
F
/dt
0
4
8
12
16
20
1000 1200 1400 1600 1800 2000
-di
F
/ dt [A/μs]
Q
RM
[μC]
T
VJ
= 150
o
C
V
R
= 300V
I
F
= 200A
100A
50A
Fig. 23. Typ. Peak Reverse Current I
RM
vs. -di
F
/dt
40
60
80
100
120
140
1000 1200 1400 1600 1800 2000
di
F
/dt [A/μs]
I
RM
[A]
50A
100A
I
F
= 200A
T
VJ
= 150
o
C
V
R
= 300V
Fig. 24. Typ. Recovery Time t
rr
vs. -di
F
/dt
50
100
150
200
250
300
350
1000 1200 1400 1600 1800 2000
-di
F
/dt [A/μs]
t
rr
[ns]
50A
100A
I
F
= 200A
T
VJ
= 150
o
C
V
R
= 300V
Fig. 25. Typ. Recovery Energy E
rec
vs. -di
F
/dt
0
1
2
3
4
5
1000 1200 1400 1600 1800 2000
-di
F
/dt [A/μs]
E
rec
[mJ]
100A
50A
I
F
= 200A
T
VJ
= 150
o
C
V
R
= 300V
Fig. 26. Maximum Transient Thermal Impedance
(Diode)
0.001
0.01
0.1
1
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Pulse Width - Seconds
Z
(th)JC
- K / W
D = t
p
/ T
t
p
T
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
Single Pulse
D = 0.01
SW INCHES MILLIMETERS M1 N MAX M 1N MAX A .190 .205 4.03 5 21 A1 .050 .100 2.20 2.54 A2 .075 .055 1.91 2.15 b .045 .055 1.14 1.40 112 .075 .007 1.91 2.20 04 115 .125 2.72 3.20 C .024 .031 0.61 0.80 D .0157 .540 20.811 21.34 D1 .650 .690 1651 17.53 D2 .035 .050 0.89 1.27 E .520 .535 15.75 16.13 E1 .520 .550 13.00 14.22 5 2151230 5.45 050 L .700 .010 19.01 20.57 L1 150 .170 3,51 432 o .220 .244 5.59 5 20 R 170 .190 4.32 4.83 1. 1111: 4170111711; 011 mu| «11 11mm mmmm 54 1:05: 5011». 107247 10 (5755541) mam saw 1111011111 101.. 1 P111 [2 1s (0011:5150 Iv 0-: 1mm mark (1“) 5 1.10 11.511 7 Due 51 (he 100011119 0.5mm on 11.. packaging Wm: 31 1010. m 5.1 Wlinq 1311 m. 1000! and beck mum 52 115 me 5511» am on me 1900. and 0M 11. 5151.0 m0 1.015.414. INC ES MILL1 55 5111501 MIN 140x 1.1111 MAX A .155 209 4.70 5.51 A1 .102 115 2,59 3.00 5 .057 .055 0.94 1.40 01 .057 102 2.21 2.55 52 .110 120 2.79 320 c .017 029 0.45 0.74 0 1 007 1.047 25.55 25.50 E 750 799 19 50 20.29 9 .215030 5.45 050 0 .000 .010 0.00 0 25 K .000 010 0.00 0 25 1 .779 .542 19.79 21.15 11 .057 102 2,21 2,55 05 .122 135 3.10 151 051 .270 290 5.56 7.57 0 .140 255 5.10 5.50 01 350 345 5 55 5,79 05 .155 157 3.04 4,75 051 .055 095 2.15 2.55 s .243 .253 5.17 5 4.3 rgn‘wdflmwmimw-WVIM n. mammmwdb-Imwwdwmwminm
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK110N65B4H1
IXXX110N65B4H1
PLUS247 Outline
TO-264 Outline
PINS:
1 - Gate
2,4 - Collector
3 - Emitter
PINS:
1 - Gate 2,4 - Collector
3 - Emitter
©2019 IXYS CORPORATION, All Rights Reserved
IXXK110N65B4H1
IXXX110N65B4H1
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.