Datenblatt für ST(B,F,P,W)13N80K5 von STMicroelectronics

I 'l meaugmented Qk %% D(2,TAB) 5(3)
September 2017
DocID024348 Rev 4
1/23
This is information on a product in full production.
www.st.com
STB13N80K5, STF13N80K5,
STP13N80K5, STW13N80K5
N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5
Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
RDS(on) max.
ID
PTOT
STB13N80K5
800 V
0.45 Ω
12 A
190 W
STF13N80K5
35 W
STP13N80K5
190 W
STW13N80K5
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1: Device summary
Order code
Marking
Package
Packing
STB13N80K5
13N80K5
D²PAK
Tape and reel
STF13N80K5
TO-220FP
Tube
STP13N80K5
TO-220
STW13N80K5
TO-247
123
TO-247
123
TAB
TO-220
TAB
D PAK
2
123
TO-220FP
Contents
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
2/23
DocID024348 Rev 4
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ................................................................................... 10
4 Package information ..................................................................... 11
4.1 D²PAK (TO-263) type A package information ................................. 11
4.2 TO-220FP package information ...................................................... 14
4.3 TO-220 type A packing information ................................................. 16
4.4 TO-247 package information ........................................................... 18
4.5 D²PAK type A packing information .................................................. 20
5 Revision history ............................................................................ 22
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Electrical ratings
DocID024348 Rev 4
3/23
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK, TO-220,
TO-247
TO-220FP
VGS
Gate-source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
12
12 (1)
A
ID
Drain current (continuous) at TC = 100 °C
7.6
7.6 (1)
A
IDM(2)
Drain current (pulsed)
48
48 (1)
A
PTOT
Total dissipation at TC = 25 °C
190
35
W
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat-sink
(t = 1 s, TC = 25 °C)
2500
V
dv/dt (3)
Peak diode recovery voltage slope
4.5
V/ns
dv/dt (4)
MOSFET dv/dt ruggedness
50
Tj
Operating junction temperature range
-55 to 150
°C
Tstg
Storage temperature range
Notes:
(1)Limited by package.
(2)Pulse width limited by safe operating area.
(3)ISD ≤ 12 A, di/dt =100 A/μs; VDS peak < V(BR)DSS.
(4)VDS ≤ 640 V.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
D²PAK
TO-220
TO-220FP
TO-247
Rthj-case
Thermal resistance junction-case
0.66
3.57
0.66
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
50
°C/W
Rthj-pcb(1)
Thermal resistance junction-pcb
30
°C/W
Notes:
(1)When mounted on FR-4 board of 1 inch², 2 oz Cu.
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
4
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
148
mJ
Electrical characteristics
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
4/23
DocID024348 Rev 4
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off-state
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
800
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 800 V
1
µA
VGS = 0 V, VDS = 800 V,
TC = 125 ° C(1)
50
µA
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±20 V
±10
µA
VGS(th)
Gate threshold voltage
VDD = VGS, ID = 100 µA
3
4
5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 6 A
0.37
0.45
Ω
Notes:
(1)Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
870
-
pF
Coss
Output capacitance
-
50
-
pF
Crss
Reverse transfer
capacitance
-
2
-
pF
Co(tr)(1)
Equivalent capacitance time
related
VGS = 0 V, VDS = 0 to 640 V
-
110
-
pF
Co(er)(2)
Equivalent capacitance
energy related
-
43
-
pF
Rg
Intrinsic gate resistance
f = 1 MHz, ID= 0 A
-
5
-
Ω
Qg
Total gate charge
VDD = 640 V, ID = 2.5 A
VGS= 0 to 10 V
(see Figure 22: "Test circuit
for gate charge behavior")
-
29
-
nC
Qgs
Gate-source charge
-
7
-
nC
Qgd
Gate-drain charge
-
18
-
nC
Notes:
(1)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to
80% VDSS.
(2)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to
80% VDSS.
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Electrical characteristics
DocID024348 Rev 4
5/23
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD= 400 V, ID = 6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21: "Test circuit
for resistive load switching
times" and Figure 26:
"Switching time waveform")
-
16
-
ns
tr
Rise time
-
16
-
ns
td(off)
Turn-off delay time
-
42
-
ns
tf
Fall time
-
16
-
ns
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
14
A
ISDM(1)
Source-drain current
(pulsed)
-
56
A
VSD(2)
Forward on voltage
ISD = 12 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery time
ISD = 12 A, di/dt = 100 A/μs,
VDD = 60 V
(see Figure 23: "Test circuit
for inductive load switching
and diode recovery times")
-
406
ns
Qrr
Reverse recovery charge
-
5.7
μC
IRRM
Reverse recovery current
-
28
A
trr
Reverse recovery time
ISD = 12 A, di/dt = 100 A/μs,
VDD= 60 V, Tj= 150 °C
(see Figure 23: "Test circuit
for inductive load switching
and diode recovery times")
-
600
ns
Qrr
Reverse recovery charge
-
7.9
μC
IRRM
Reverse recovery current
-
26
A
Notes:
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown voltage
IGS= ±1 mA, ID= 0 A
±30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
AMISAINI “1&5 maps ‘ms Inms n mumm- K mm m" 0.01 5mm ms: 1r2 10'5 10" to" w" Io"~,(:) u: Amsslm (A) I0 mus uuus ‘ ms mm: m SwM‘epu‘g; om m 1 m mu Vns(v) Amswm K eczagw 1o" mus loans ""5 Smg‘epmse ,z mms ‘0 v ( Wm» . «0'3 m 1 m mu VnsM 10‘ «0'3 10'? 10'1 10“ MS)
Electrical characteristics
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
6/23
DocID024348 Rev 4
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area for D²PAK
Figure 3: Thermal impedance for D²PAK
Figure 4: Safe operating area for TO-220FP
Figure 5: Thermal impedance for TO-220FP
Figure 6: Safe operating area for TO-220
Figure 7: Thermal impedance for TO-220
Gwemsmv r svusa nuns» (A) m mus tows m“ ms 1 mm a w" 0.1 0.05 JIL Smgwamse SINGLE PULSE 00‘ ‘0‘} -5 -t —S 2 I 0‘ 1 we we Vus(\l) to ‘0 m ‘0’ 10’ Ms) Awsssuvl Awségvv low I ‘ ('5’ I ‘ wag 1v vas:zov ,— m WV 30 .9v 25 / 25 / / 20 20 15 / /—3V ‘5 '/ / m m / /—7v 5 s 0 6V 0 o s m 15 20 VDSM 4 s a 7 a 9 m VGSM V65 ““55““ Rm") Gwemnzzm71n20m as n M M ( ) 12 600 042 vusmov 10 500 040 s 400 0.38 5 300 0.36 4 200 0.34 2 100 032 0 0 a 2 4 a a 1o 12 w A 25 30 ngo n( ) m 15 20 E]
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Electrical characteristics
DocID024348 Rev 4
7/23
Figure 8: Safe operating area for TO-247
Figure 9: Thermal impedance for TO-247
Figure 10: Output characteristics
Figure 11: Transfer characteristics
Figure 12: Gate charge vs gate-source voltage
Figure 13: Static drain-source on-resistance
AMY 559m E035 Awsessw (if) (N) ‘2 ‘00” (is; u) a mo 5 C055 4 10 ('55 Z ‘ 0 ‘ 100 400500 7 soov-v 0,1 m 100 Vus(V) 0 no 300 500 00 mm VGtstthu ‘ ”“5695" RDSW AMvsswvv ID:100pA “W' \ \ 1.2 ImaA \ 2-5 V65:10\/ 1 2 0.8 1.5 0.5 0.4 1 0.2 05 150 ‘7 ’50 5“ ”‘0 mm 7100 750 0 50 me 150 mm mm: ‘ ”“5“” V5.) Amman mam] M |D:lmA II 1 0:501 // 105 0.9 C/ 1 0'5 71:25? ‘ V/ 095 0‘7 / ‘ 0'9 0.5 TJ:150*C 0'85 0.5 ‘ 400 750 so ‘00 150 mm 0 2 4 s a 10 ISDW
Electrical characteristics
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
8/23
DocID024348 Rev 4
Figure 14: Capacitance variations
Figure 15: Output capacitance stored energy
Figure 16: Normalized gate threshold voltage vs
temperature
Figure 17: Normalized on-resistance vs
temperature
Figure 18: Normalized V(BR)DSS vs temperature
Figure 19: Source-drain diode forward
characteristics
AMIswow 140 120 100 80 60 40 20 0 20 40 50 so 100 120 140 TJ(°C) E]
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Electrical characteristics
DocID024348 Rev 4
9/23
EAS (mJ)
Figure 20: Maximum avalanche energy vs. starting Tj
22m: 3 J V“ , Rs u u r mun rn V ‘ D u r a, r VW.‘ m ‘ L \M L eo-r T07“ um n um v” 90% 02 «av. K17
Test circuits
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
10/23
DocID024348 Rev 4
3 Test circuits
Figure 21: Test circuit for resistive load
switching times
Figure 22: Test circuit for gate charge
behavior
Figure 23: Test circuit for inductive load
switching and diode recovery times
Figure 24: Unclamped inductive load test
circuit
Figure 25: Unclamped inductive waveform
Figure 26: Switching time waveform
E] 59er was ummmw A1 00791157724:
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Package information
DocID024348 Rev 4
11/23
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1 D²PAK (TO-263) type A package information
Figure 27: D²PAK (TO-263) type A package outline
Package information
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
12/23
DocID024348 Rev 4
Table 10: D²PAK (TO-263) type A package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
10.40
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
e
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
0.40
V2
0°
8°
E] 72.2 4» 76 a 2. 54 Q?” ‘ 5.5 5‘08 Rxxpm
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Package information
DocID024348 Rev 4
13/23
Figure 28: D²PAK (TO-263) type A recommended footprint (dimensions are in mm)
L7 .49.. ”‘T 7‘, \ \ “—4 UK, 7 L L5 L4 L2 L3
Package information
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
14/23
DocID024348 Rev 4
4.2 TO-220FP package information
Figure 29: TO-220FP package outline
7012510_Rev_12_B
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Package information
DocID024348 Rev 4
15/23
Table 11: TO-220FP package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
A 61’ E F + {\A 0‘ T _' J 7 f H' ,, D ‘W D! __ L20 ) f ,— P (D 9 L50 \ [I v b10004 L‘ L a n | I 2 5| '5 I ————c —— «— b (X3) 914—] omsm xypeA Rev 2x K17
Package information
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
16/23
DocID024348 Rev 4
4.3 TO-220 type A packing information
Figure 30: TO-220 type A package outline
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Package information
DocID024348 Rev 4
17/23
Table 12: TO-220 type A package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
u m u m b [k I.L - I“ E I N. I I W I _|IU7H L IH‘I I L D L .
Package information
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
18/23
DocID024348 Rev 4
4.4 TO-247 package information
Figure 31: TO-247 package outline
0075325_8
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Package information
DocID024348 Rev 4
19/23
Table 13: TO-247 package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
5.45
5.60
L
14.20
14.80
L1
3.70
4.30
L2
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
5.50
5.70
5‘ m mamme vehon‘v nzludmg arm and «GM mmmncamund an m Wm cumu‘auve \u‘evanze an Iape Hr 02 mm Us“ dvemon 0! lead 9 ¢ ¢ o R l ’ Benqu radlus Um Amman 04 lead AMOESSZVI
Package information
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
20/23
DocID024348 Rev 4
4.5 D²PAK type A packing information
Figure 32: D²PAK type A tape outline
E] 40mm mil. access hole it slot locatim Tape sto‘ in we br tape sun 25mm minim G magnum Bflmb AMDSOGBM
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Package information
DocID024348 Rev 4
21/23
Figure 33: D²PAK type A reel outline
Table 14: D²PAK type A tape and reel mechanical data
Tape
Reel
Dim.
mm
Dim.
mm
Min.
Max.
Min.
Max.
A0
10.5
10.7
A
330
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
13.2
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
26.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
30.4
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
Revision history
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
22/23
DocID024348 Rev 4
5 Revision history
Table 15: Document revision history
Date
Revision
Changes
07-Mar-2013
1
First release.
27-Mar-2013
2
Updated Figure 1: Internal schematic diagram.
Minor text changes.
Document status promoted from preliminary data to production data.
15-Apr-2013
3
– Modified: EAS value, the entire typical values on Table 5, 6 and 7
– Inserted: Section 2.1: Electrical characteristics (curves)
– Minor text changes
25-Sep-2017
4
Added: TO-247 package.
Updated title, features and description.
Updated Figure 13: "Static drain-source on-resistance".
Updated Table 2: "Absolute maximum ratings", Table 5: "On/off-
state", Table 6: "Dynamic" and Table 8: "Source-drain diode".
Added Figure 8: "Safe operating area for TO-247" and Figure 9:
"Thermal impedance for TO-247".
Updated Section 4.4: "TO-247 package information".
Minor text changes.
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
DocID024348 Rev 4
23/23
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the
design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics – All rights reserved