Datenblatt für SQJ422EP-T1-GE3 von Vishay Siliconix

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SQJ422EP
www.vishay.com Vishay Siliconix
S12-2824-Rev. A, 10-Dec-12 1Document Number: 63989
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
•TrenchFET
® Power MOSFET
•100 % R
g and UIS Tested
• AEC-Q101 Qualifiedc
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () at VGS = 10 V 0.0034
RDS(on) () at VGS = 4.5 V 0.0043
ID (A) 75
Configuration Single
4
6.15 mm
PowerPAK® SO-8L Single
5.13 mm
3
2
1
G
S
S
S
D
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package PowerPAK SO-8L
Lead (Pb)-free and Halogen-free SQJ422EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C ID
75
A
TC = 125 °C 62
Continuous Source Current (Diode Conduction) IS75
Pulsed Drain CurrentaIDM 300
Single Pulse Avalanche Current L = 0.1 mH IAS 46
Single Pulse Avalanche Energy EAS 105 mJ
Maximum Power DissipationaTC = 25 °C PD
83 W
TC = 125 °C 27
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
Soldering Recommendations (Peak Temperature)d, e 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB MountbRthJA 65 °C/W
Junction-to-Case (Drain) RthJC 1.8
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SQJ422EP
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S12-2824-Rev. A, 10-Dec-12 2Document Number: 63989
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 40 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = 40 V - - 1
μA VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150
On-State Drain Currenta I
D(on) V
GS = 10 V VDS5 V 30 - - A
Drain-Source On-State Resistancea R
DS(on)
VGS = 10 V ID = 18 A - 0.0028 0.0034
VGS = 4.5 V ID = 16 A - 0.0035 0.0043
VGS = 10 V ID = 18 A, TJ = 125 °C - - 0.0071
VGS = 10 V ID = 18 A, TJ = 175 °C - - 0.0089
Forward Transconductancebgfs VDS = 15 V, ID = 18 A - 117 - S
Dynamicb
Input Capacitance Ciss
VGS = 0 V VDS = 20 V, f = 1 MHz
- 3730 4660
pF Output Capacitance Coss - 553 691
Reverse Transfer Capacitance Crss - 223 278
Total Gate ChargecQg
VGS = 10 V VDS = 20 V, ID = 10 A
- 67 100
nC Gate-Source ChargecQgs - 11.25 -
Gate-Drain ChargecQgd - 10.31 -
Gate Resistance Rgf = 1 MHz 0.30 0.63 1.10
Turn-On Delay Timectd(on)
VDD = 20 V, RL = 20
ID 10 A, VGEN = 10 V, Rg = 6
-1319
ns
Rise Timectr -1015
Turn-Off Delay Timectd(off) -2944
Fall Timectf -812
Source-Drain Diode Ratings and Characteristicsb
Pulsed CurrentaISM - - 300 A
Forward Voltage VSD IF = 12 A, VGS = 0 - 0.75 1.1 V
9‘1“ >{/ //T — V VISHAY.
SQJ422EP
www.vishay.com Vishay Siliconix
S12-2824-Rev. A, 10-Dec-12 3Document Number: 63989
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
14
28
42
56
70
0 2 4 6 8 10
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
0
40
80
120
160
200
0 4 8 12 16 20
gfs - Transconductance (S)
ID - Drain Current (A)
T
C
= 125 °C
TC = - 55 °C
TC = 25 °C
0
500
1000
1500
2000
2500
3000
0 10 20 30 40
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0
12
24
36
48
60
0 1 2 3 4 5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
TC = - 55 °C
TC = 125 °C
TC = 25 °C
0.000
0.005
0.010
0.015
0.020
0.025
0 10 20 30 40 50
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
V
= 4.5 V
VGS = 10 V
0
2
4
6
8
10
0 14 28 42 56 70
VGS - Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VDS = 20 V
I
D
= 10A
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SQJ422EP
www.vishay.com Vishay Siliconix
S12-2824-Rev. A, 10-Dec-12 4Document Number: 63989
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
0.6
0.9
1.2
1.5
1.8
2.1
- 50 - 25 0 25 50 75 100 125 150 175
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 15 A
V
GS
= 4.5 V
V
GS
= 10 V
0.00
0.01
0.02
0.03
0.04
0.05
0 2 4 6 8 10
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
TJ = 150 °C
TJ = 25 °C
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS - Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ = 25 °C
TJ = 150 °C
- 1.2
- 0.8
- 0.4
0.0
0.4
- 50 - 25 0 25 50 75 100 125 150 175
VGS(th) Variance (V)
TJ - Temperature (°C)
I
D
= 250 μA
I
D
= 5 mA
42
44
46
48
50
52
- 50 - 25 0 25 50 75 100 125 150 175
VDS - Drain-to-Source Voltage (V)
TJ - Junction Temperature (°C)
ID = 1 mA
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SQJ422EP
www.vishay.com Vishay Siliconix
S12-2824-Rev. A, 10-Dec-12 5Document Number: 63989
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Limited by RDS(on)*
1 ms
IDM Limited
TC = 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
1 s, 10 s, DC
100 ms
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 68 °C/W
3. T JM - T
A = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
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SQJ422EP
www.vishay.com Vishay Siliconix
S12-2824-Rev. A, 10-Dec-12 6Document Number: 63989
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63989.
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single
Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
VISHAY. :1 us v2 4 :I \I F/ [a I.) TOPSIDE VIEW I: Eel. MI \‘ h3— — h; n25 Gauge Line I I; I; BACKSIDE VIEW SINGLE 3| ( F) u| 3’ g L -\ \ n3 ‘ n3 / n2 b3 - b4 BACKSIDE VIEW DUAL gmosIechsugport©vIshayLam www.vIshay.com/doc?91000
Package Information
www.vishay.com Vishay Siliconix
Revision: 07-Sep-15 1Document Number: 66934
For technical questions, contact: pmostechsupport@vishay.com
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PowerPAK® SO-8L Case Outline
for Al Parts
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Package Information
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Revision: 07-Sep-15 2Document Number: 66934
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Note
• Millimeters will gover
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 1.00 1.07 1.14 0.039 0.042 0.045
A1 0.00 - 0.127 0.00 - 0.005
b 0.33 0.41 0.48 0.013 0.016 0.019
b1 0.44 0.51 0.58 0.017 0.020 0.023
b2 4.80 4.90 5.00 0.189 0.193 0.197
b3 0.094 0.004
b4 0.47 0.019
c 0.20 0.25 0.30 0.008 0.010 0.012
D 5.00 5.13 5.25 0.197 0.202 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.86 3.96 4.06 0.152 0.156 0.160
D3 1.63 1.73 1.83 0.064 0.068 0.072
e 1.27 BSC 0.050 BSC
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 4.27 4.37 4.47 0.168 0.172 0.176
E2 2.75 2.85 2.95 0.108 0.112 0.116
F - - 0.15 - - 0.006
L 0.62 0.72 0.82 0.024 0.028 0.032
L1 0.92 1.07 1.22 0.036 0.042 0.048
K 0.51 0.020
W 0.23 0.009
W1 0.41 0.016
W2 2.82 0.111
W3 2.96 0.117
q 0° - 10° 0° - 10°
ECN: C15-1203-Rev. A, 07-Sep-15
DWG: 6044
— V VISHAY.
PAD Pattern
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Revision: 07-Feb-12 1Document Number: 63818
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RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
Recommended Minimum Pads
Dimensions in mm (inches)
5.000
(0.197)
2.310
(0.091)
0.510
(0.020)
0.595
(0.023)
4.061
(0.160)
3.630
(0.143)
0.410
(0.016)
0.710
(0.028)
0.610
(0.024)
2.715
(0.107)
1.270
(0.050)
1.905
(0.075)
0.860
(0.034)
0.820
(0.032)
7.250
(0.285)
8.250
(0.325)
6.250
(0.246)
1.291
(0.051)
— VISHAY. V
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Revision: 08-Feb-17 1Document Number: 91000
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