Datenblatt für TLP291 von Toshiba Semiconductor and Storage

Datenblatt - Kommentare/Fehler melden

TOSHIBA all urface and IBA 11- We1ghl: 0.05 g (lyp.) E67349 Acce lance Se . p PI 02. Approved 1200315 1. 2001, EN 60 2002. ed no. 1200315 E CI 60065 200 no. 9036 %i< 60950»1:2="" ed="" no.="" 9037="" e="" 1="" 60747-5-5="" ceniltcale.="" 47="" almg="" msulahon="" voltage:="" 707="" me="" over-vo‘lage.="" 6000="" v="" 60747-5-5="" approved="" is="" needed,="" esignate="" the="" “="" v4)"="" mechanical="" ra="" distance:="" (mm)="" clearance:="" mm="" (mm)="" insulaﬁon="" :hickness:="" 0.4="" mm="" (mm)="" 2014—09-22="">

TLP291

2014-09-22

TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

TLP291

Power Supplies

Programmable Controllers

Hybrid ICs

TLP291 consists of photo transistor, optically coupled to a gallium arsenide

infrared emitting diode. TLP291 is housed in the SO4 package, very small

and thin coupler.

Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C)

and high isolation voltage (3750Vrms), it’s suitable for high-density surface

mounting applications such as small switching power supplies and

programmable controllers.

 Collector-Emitter Voltage : 80 V (min)

 Current Transfer Ratio : 50% (min)

Rank GB : 100% (min)

 Isolation Voltage : 3750 Vrms (min)

 Operation temperature : -55 to 110 ˚C

 UL recognized : UL1577, File No. E67349

 cUL approved : CSA Component Acceptance Service No.5A,

File No. 67349

 SEMKO approved: EN 60065: 2002, Approved no. 1200315

EN 60950-1: 2001, EN 60335-1: 2002,

Approved no. 1200315

 BSI approved : BS EN 60065: 2002, Approved no. 9036

: BS EN 60950-1: 2006, Approved no. 9037

 Option (V4)

VDE approved: EN 60747-5-5 Certificate, No. 40009347

Maximum operating insulation voltage: 707 Vpk

Highest permissible over-voltage: 6000 Vpk

(Note) When EN 60747-5-5 approved type is needed,

please designate the “Option(V4)”

Construction Mechanical Rating

Creepage distance: 5.0 mm (min)

Clearance: 5.0 mm (min)

Insulation thickness: 0.4 mm (min)

TOSHIBA 11-3C1

Weight: 0.05 g (typ.)

1:ANODE

2:CATHODE

3:EMITTER

4:COLLECTOR

TLP291

Pin Configuration

Unit: mm

Start of commercial production

2012

TOSHIBA Current Transfer Ram (%) \ CE when ordermg me pan num 2014-09-22

TLP291

2014-09-22

Current Transfer Ratio (CTR) Rank ( Unless otherwise specified, Ta = 25°C)

Note1: Specify both the part number and a rank in this format when ordering

(e.g.) rank GB: TLP291 (GB,E

For safety standard certification, however, specify the part number alone.

(e.g.)TLP291 (GB,E: TLP291

TYPE Classification

(Note1)

Current Transfer Ratio (%)

(IC / IF)

Marking of Classification

IF = 5 mA, VCE = 5 V, Ta = 25°C

Min Max

TLP291

Blank 50 400

Blank, YE, Y+, GR, GB, G, G+,B

Rank Y 50 150 YE

Rank GR 100 300 GR

Rank GB 100 400 GB

Rank YH 75 150 Y+

Rank GRL 100 200 G

Rank GRH 150 300 G+

Rank BLL 200 400 B

TOSHIBA 1.5 125 -55 to 110 6510 125 260 (1 200 APT /ATa BVS (Nuteai ads (e.g. the ap n of high tempera etc ) may c product to decree perating tempe ature/current/voltagei etc) opriate reiiabiiity u ng the Tosh ns"/"Derating C Methods") and in estimated failure rate‘ at < 1001151="" frequency="" 100="" minute.="" r.="" 560%‘="" de="" considered="" a="" two="" te="" side="" pins="" sho="" together.="" electrical="" characteristics="" 5="" otherwis="" characteristic="" symbol="" ward="" voltage="" vf="" npur="" reverse="" curren="" ir="" input="" capacltan="" c="" coiieclur—e="" vaitage="" “0‘="" emitter-co="" oitage="" 2014-09-22="">

TLP291

2014-09-22

Absolute Maximum Ratings (Note)( Unless otherwise specified, Ta = 25°C)

CHARACTERISTIC SYMBOL

NOTE RATING

UNIT

LED

Input forward current IF 50 mA

Input forward current derating (Ta90°C) IF /Ta -1.5 mA /°C

Input forward current (pulsed ) IFP (Note 2) 1 A

Input reverse voltage VR 5 V

Input power dissipation PD 100 mW

Input power dissipation derating (Ta  90°C) PD/Ta -3.0 mW/°C

Junction temperature Tj 125 °C

DETECTOR

Collector-emitter voltage VCEO 80 V

Emitter-collector voltage VECO 7 V

Collector current IC 50 mA

Collector power dissipation PC 150 mW

Collector power dissipation derating(Ta25°C) PC /Ta -1.5 mW /°C

Junction temperature Tj 125 °C

Operating temperature range Topr -55 to 110 °C

Storage temperature range Tstg -55 to 125 °C

Lead soldering temperature Tsol 260 (10s) °C

Total package power dissipation PT 200 mW

Total package power dissipation derating(Ta25°C) PT /Ta -2.0 mW /°C

Isolation voltage BVS (Note3) 3750

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note2: Pulse width ≤ 100μs, frequency 100Hz

Note3: AC, 1 minute, R.H.60%, Device considered a two terminal device: LED side pins shorted together and

DETECTOR side pins shorted together.

Electrical Characteristics (Unless otherwise specified, Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

LED

Input forward voltage VF I

F = 10 mA 1.1 1.25 1.4 V

Input reverse current IR V

R = 5 V - - 5 μA

Input capacitance CT V = 0 V, f = 1 MHz - 30 - pF

DETECTOR

Collector-emitter breakdown voltage V(BR) CEO I

C = 0.5 mA 80 - -

Emitter-collector breakdown voltage V(BR) ECO I

E = 0.1 mA 7 - -

Dark current ICEO

VCE = 48 V - 0.01 0.08 μA

VCE = 48 V, Ta = 85°C - 2 50 μA

Collector-emitter capacitance CCE V = 0 V, f = 1 MHz - 10 - pF

TOSHIBA C. 1 minute AC. 1 secundm DC , | mlnm ,Ta = 25°C) TEST CONDITION 1 MHz 00 V‘ R.H.SE 5 otherwise 5 YMBOL n N ified, Ta = 25 TEST CONDITION 1F ng Time Test 2014-09-22

TLP291

2014-09-22

Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

Current transfer ratio IC / IF

IF = 5 mA, VCE = 5 V

Rank GB

50 - 400

100 - 400

Saturated current transfer ratio IC / IF (sat)

IF = 1 mA, VCE = 0.4 V

Rank GB

- 60 - %

30 - -

Collector-emitter saturation voltage VCE (sat)

IC = 2.4 mA, IF = 8 mA - - 0.3

IC = 0.2 mA, IF = 1 mA

Rank GB

- 0.2 -

- - 0.3

OFF-state collector current IC (off) VF = 0.7 V, VCE = 48 V - - 10 μA

Isolation Characteristics (Unless otherwise specified, Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

Total capacitance (input to output) CS VS = 0 V, f = 1 MHz - 0.8 - pF

Isolation resistance RS VS = 500 V, R.H.60% 1×1012 1014 - Ω

Isolation voltage BVS

AC , 1 minute 3750 - - Vrms

AC , 1 second, in OIL - 10000 -

DC , 1 minute, in OIL - 10000 - Vdc

Switching Characteristics (Unless otherwise specified, Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

Rise time tr

VCC = 10 V, IC = 2 mA

RL = 100Ω

- 4 -

μs

Fall time tf - 7 -

Turn-on time ton - 7 -

Turn-off time toff - 7 -

Turn-on time ton

RL = 1.9 kΩ (Fig.1)

VCC = 5 V, IF = 16 mA

- 2 -

μs Storage time ts - 30 -

Turn-off time toff - 60 -

(Fig.1) Switching Time Test Circuit

ton toff

TOSHIBA (Nme) Tms curve maxxmum mm |o power mssrpa -2u u 20 an m Amb re Ta (C) F'VF 100 I; (m 10 Inp 0.1 m‘ 10‘ Duty cyc‘e rauo DR AVF/ATa-l AV;/ATa( 2014-09-22

TLP291

2014-09-22

IF-Ta PC-Ta

Input forward current I F (mA)

Collector power dissipation PC (mW)

Ambient temperature Ta (˚C) Ambient temperature Ta (˚C)

IFP-DR IF-VF

Input forward current (pulsed)

IFP (mA)

Input forward current IF (mA)

Duty cycle ratio DR Input forward voltage VF (V)

VF/Ta- IF IFP - VFP

Input forward current derating

ΔVF /ΔTa ( m V / ° C)

Input forward current (pulsed) IFP (mA)

Input forward current IF (mA) Input forward voltage (pulsed) VFP (V)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

100

-20 0 20 40 60 80 100 120

100

120

140

160

-20 0 20 40 60 80 100 120

0.1

100

0.6 0.8 1 1.2 1.4 1.6 1.8 2

-3.2

-2.8

-2.4

-2

-1.6

-1.2

-0.8

-0.4

0.1 1 10 100

100

1000

0.6 1 1.4 1.8 2.2 2.6 3 3.4

110˚C

85˚C

50˚C

25˚C

0˚C

-25˚C

-55˚C

Pules width 100μs

Ta=2 5˚C

100

1000

300

500

3000

10-3 10-2 10-1 100

Pulse width 10μs

Repeative frequency=100Hz

Ta=2 5°C

(Note) This curve shows

the maximum limit to the

input forward current.

(Note) This curve shows the

maximum limit to the collector

power dissipation.

(Note) This curve shows the

maximum limit to the input

forward current (pulsed).

TOSHIBA HQ 0 oz 03 Conector ge ch (V) ICEo-Ta 3 3; m um ow VcE av VCE:5V , Veg mm ‘ m wardvouage \; (mA) 'C/IF "F _CE=mv cE=5V VCE:0 4v mu 2014—09-22

TLP291

2014-09-22

IC-VCE

Collector current IC (mA)

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

IC-IF ICEO-Ta

Collector current IC (mA)

Dark current ICEO (μA)

Input forward voltage IF (mA) Ambient temperature Ta (°C)

IC/IF -IF

Current transfer ratio IC / IF (%)

Input forward current IF (mA)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

0 0.2 0.4 0.6 0.8 1

0.1

100

0.1 1 10 100

0.0001

0.001

0.01

0.1

020406080100120

100

1000

0.1 1 10 100

0246810

Ta=2 5˚C

VCE=10V

VCE=5V

VCE=0.4V

VCE=10V

VCE=5V

VCE=0.4V

24V

10V

VCE=48V

IF=2mA

IF=5mA

(max)

Ta=2 5˚C

TOSHIBA 760 74o 40 so an ‘ mtem ralure Ta (" mhmg um mu m Swuchmg ume Load re :2) 2014-09-22

TLP291

2014-09-22

VCE(sat) - Ta IC - Ta

Collector-emitter saturation voltage

VCE(sat) (V)

Collector current I

C (mA)

Ambient temperature Ta (°C)

Switching time - RL Switching time - Ta

Switching time (μs)

Load resistance RL (kΩ) Ambient temperature Ta (°C)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

-60 -40 -20 0 20 40 60 80 100 120

0.1

100

-60 -40 -20 0 20 40 60 80 100 120

100

1000

10000

110100

0.1

100

1000

-60 -40 -20 0 20 40 60 80 100 120

IF=8mA, IC=2.4mA

IF=1mA, IC=0.2mA VCE=5V

=0.5m

toff

Ta=2 5˚C

IF=16mA

VCC=5V

IF=16mA

VCC=5V

RL=1.9k

ton

toff

Ton

TOSHIBA his profile is has maximum heat (e value. Set the prehe temperature the optimum tem correspo to the solder pas used by the customer within the descr e. sing lead (P ee solder This pr ___________________ maxim l l l l l l l l l .__ l l r. 4 > i All m in: Tlml. Reﬂow solderin must be performed 0 The mounli d be completed w 2014—09-22

TLP291

2014-09-22

Soldering and Storage

1. Soldering

1.1 Soldering

When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as

much as possible by observing the following conditions.

1) Using solder reflow

·Temperature profile example of lead (Pb) solder

·Temperature profile example of using lead (Pb)-free solder

Reflow soldering must be performed once or twice.

The mounting should be completed with the interval from the first to the last mountings being 2 weeks.

2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder)

· Please preheat it at 150°C between 60 and 120 seconds.

· Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once.

3) Using a soldering iron

Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may

be heated at most once.

Time (s)

(°C)

240

210

160

60 to 120s less than 30s

Package surface temperature

140

Time (s)

(°C)

260

230

190

60 to 120s

30 to 50s

180

Package surface temperature

This profile is based on the device’s

maximum heat resistance guaranteed

value.

Set the preheat temperature/heating

temperature to the optimum temperature

corresponding to the solder paste type

used by the customer within the

described profile.

This profile is based on the device’s

maximum heat resistance guaranteed

value.

Set the preheat temperature/heating

temperature to the optimum temperature

corresponding to the solder paste type

used by the customer within the

described profile.

TOSHIBA osive gases) emperature which will de‘e static containe(s m devices while they are in s‘orage. al storage co (is r 2014—09-22

TLP291

2014-09-22

2. Storage

1) Avoid storage locations where devices may be exposed to moisture or direct sunlight.

2) Follow the precautions printed on the packing label of the device for transportation and storage.

3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%,

respectively.

4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty

conditions.

5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during

storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the

solderability of the leads.

6) When restoring devices after removal from their packing, use anti-static containers.

7) Do not allow loads to be applied directly to devices while they are in storage.

8) If devices have been stored for more than two years under normal storage conditions, it is recommended

that you check the leads for ease of soldering prior to use.

TOSHIBA (ﬂ) ote4 ) lication for details on envir ean Partiament certain hazardous es in eiectri ymboi Ratin voltage voltage, Method A VIORM. type and sampi discharge<5pc output="" test="" vo="" 1.875="" x="" viorm.="" 10="" on="" test="" partial="" discharge="" est="" permissible="" 0v="" (transient="" overvol="" e,="" tpr:605)="" safety="" limiting="" valu="" permissible="" ratin="" refer="" to="" the="" current="" (i="" psi:0mw="" 3="" 2014—09-22="">

TLP291

2014-09-22

EN 60747-5-5 Option:(V4)

Types : TLP291

Type designations for “option: (V4)”, which are tested under EN 60747 requirements.

(e.g.): TLP291 (V4GB-TP,E V4 : EN 60747 option

GB : CTR rank type

TP : Standard tape & reel type

E : [[G]]/RoHS COMPATIBLE (Note4 )

Note: Use TOSHIBA standard type number for safety standard application.

(e.g.): TLP291(V4GB-TP,E  TLP291

Note4: Please contact your Toshiba sales representative for details on environmental information such

as the product’s RoHS compatibility.

RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and

electronics equipment.

EN 60747 Isolation Characteristics

Description Symbol Rating Unit

Application classification

for rated mains voltage  150Vrms

for rated mains voltage  300Vrms

I-IV

I-III

Climatic classification 55 / 110 / 21 -

Pollution degree 2 -

Maximum operating insulation voltage VIORM 707 Vpk

Input to output test voltage, Method A

Vpr=1.5 × VIORM, type and sample test

tp=10s, partial discharge<5pC

Vpr 1060 Vpk

Input to output test voltage, Method B

Vpr=1.875 × VIORM, 100% production test

tp=1s, partial discharge<5pC

Vpr 1325 Vpk

Highest permissible overvoltage

(transient overvoltage, tpr=60s) VTR 6000 Vpk

Safety limiting values (max. permissible ratings in case of fault,

also refer to thermal derating curve)

current (input current: IF, Psi=0mW)

power (output or total power dissipation)

temperature

Isi

Psi

Tsi

250

400

150

°C

Insulation resistance

VIO=500V, Ta=Tsi Rsi

109 Ω

TOSHIBA 175 reduced below e safety limit data. protective cu‘cuit. CTR rank mark 2014—09-22

TLP291

2014-09-22

Insulation Related Specifications

Minimum creepage distance Cr 5.0mm

Minimum clearance Cl 5.0mm

Minimum insulation thickness ti 0.4mm

Comparative tracking index CTl 175

1. If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this value.

(e.g. at a standard distance between soldering eye centers of 3.5mm).

If this is not permissible, the user shall take suitable measures.

2. This photocoupler is suitable for ‘safe electrical isolation’ only within the safety limit data.

Maintenance of the safety data shall be ensured by means of protective circuit.

VDE test sign: Marking on product

for EN 60747

: Marking on packing

for EN 60747

Marking Example: TLP291

1pin mark

CTR rank mark

Lot No.

Type

Country of origin

e.g.) J; Japan

Option(V4) mark

Process Lot No.

TOSHIBA Melhod A 60747 procedure accordi inspemion p,(1325v ) ‘P 1b Melhod B 125 maximum safew rali 3 Dependen D D u u 5 4 __—\5\ 300 2014—09-22

TLP291

2014-09-22

Figure

1 Partial discharge measurement procedure according to EN 60747

Destructive test for qualification and sampling tests.

Method A

(for type and sampling tests,

destructive tests)

t1, t2

t3, t4

tp(Measuring time for

partial discharge)

tini

VVINITIAL(6kV)

Vpr(1060V)

VIORM(707V)

t1tini

= 1 to 10 s

= 1 s

= 10 s

= 12 s

= 60 s

Vpr(1325V )

VIORM(707V )

t3t4

Figure 2 Partial discharge measurement procedure according to EN 60747

Non-destructive test for100% inspection.

Method B

(for sample test, non-

destructive test)

t3, t4

tp(Measuring time for

partial discharge)

= 0.1 s

= 1 s

= 1.2 s

Figure

3 Dependency of maximum safety ratings on ambient temperature

500

400

300

200

100

0 25 50 75 100 125 150 175

500

400

300

200

100

Ta (°C)

 Psi

Isi 

Isi

(mA)

Psi

(

)

TOSHIBA uncllon or tart. ams tor Ihetr ha quI Cause Ioss o create destgn wtth tat the Iate the dala sheets a My Handbook" a responstote tor an a ss oflhe use loIs atned in [ms docum s, and (ct vattd Rs' PRODU MENTS OR SYST REQUIRE AND/OR A MAL OR FAILURE 0 TV DAMAGE RIous PUBLIC ed In thts docum eo Use Include ospacetnoustry, Ical pment‘equtpm ment, equipm d to control oomousttort puwen and equip ﬁnance-restated net LIABILITY FOR For deLaIISt ptease con ransIaIe or oop her In whote cls or systems acmre‘ use, or sa uidance for Pro se. No responstotttty Is ty nghts onht Ies lhal may result from I cument, whether e s or "noted, by es XCEPT As PRO N THE RELEVAN m A Low AW.TOSHIEA(1) MITATION, INDIR EQUENTIAL. SP N. LOSS OF PRO 3 OF OPP v AN ALL OR IMPLIED w ATION. INCL ANTIEs OR E. ACCURACV or IN ON. OR NONINF used In oducl. GaA humans Itconsu o not oreak, cuh cmsht gr chemtcatty or oth make avatIabIe Proo aled soﬂware or tech ment, user stockptttng Iasturino olnucleart hon weapons). nd reIateo software and ctuotng, wtmout lhe Japanese Foret attons Export and ot Proouct or reIaIe aII apptic egulattonso yourTOSHIEA sa twe for oetatts a duct In compltanc pllcab ut Itmttahon eclive. 10 URRING AS A RESU COMPLIANCE w 2014—09-22

TLP291

2014-09-22

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively "Product") without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,

or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all

relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for

Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for

the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product

design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or

applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams,

programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for

such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.

• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE

EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH

MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT

("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without

limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for

automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,

safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE

PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your

TOSHIBA sales representative.

• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.

• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any

applicable laws or regulations.

• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any

infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to

any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.

• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE

FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY

WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR

LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND

LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO

SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS

FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor.

Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.

• Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,

for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology

products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export

laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export

Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in

compliance with all applicable export laws and regulations.

• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES

OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

Datenblatt für TLP291 von Toshiba Semiconductor and Storage

INFORMATION

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