Datenblatt für TDA7294 von STMicroelectronics

‘ ’ I hte‘augmemad Q “J"
MULTIPOWER BCD TECHNOLOGY
Multiwatt15V Multiwatt15H
Features
• Very high operating voltage range (± 40 V)
• DMOS power stage
• High output power (up to 100 W music power)
• Muting/stand-by functions
• No switch on/off noise
• No boucherot cells
• Very low distortion
• Very low noise
• Short circuit protection
• Thermal shutdown
Description
The TDA7294 is a monolithic integrated circuit in Multiwatt15 package, intended for
use as audio class AB amplifier in Hi-Fi field applications (Home Stereo, self powered
loudspeakers, Topclass TV). Thanks to the wide voltage range and to the high out
current capability it is able to supply the highest power into both 4 Ω and 8 Ω loads
even in presence of poor supply regulation, with high supply voltage rejection.
The built in muting function with turn on delay simplifies the remote operation
avoiding switching on-off noises.
Maturity status link
TDA7294
Order code Package
TDA7294V Multiwatt15V
TDA7294HS Multiwatt15H
100 V, 100 W DMOS audio amplifier with mute/st-by
TDA7294
Datasheet
DS0013 - Rev 8 - July 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
I]|—.|.
1Typical application
Figure 1. Typical application and test circuit
IN- 2
R2
680Ω
C2
22µF
C1 470nF IN+
R1 22K
R6
2.7Ω
C10
100nF
3
R3 22K
-
+
MUTE
STBY
4
VM
VSTBY
10
9
IN+MUTE
MUTE
STBY
R4 22K
THERMAL
SHUTDOWN
S/C
PROTECTION
R5 10K
C3 10µF C4 10µF
1
STBY-GND
C5
22µF
317
14
6
158
-Vs -PWVs
BOOT-
STRAP
OUT
+PWVs+Vs
C9 100nF C8 1000µF
-Vs
+Vs 0001 6CFn001 7C µF
Note: The Boucherot cell R6, C10, normally not necessary for a stable operation it could be needed in presence of
particular load impedances at VS < ± 25 V.
TDA7294
Typical application
DS0013 - Rev 8 page 2/31
~Ua wuuzm um .v: wuusm mt. n.c. MUYE smnursv ws 15mm) .u: 151mm.) anmswav ".2. sun mm muzmmc mum muzmmn mum wannrsv mm
2Pin connection
Figure 2. Pin connection (top view)
TAB connected to -VS
TDA7294
Pin connection
DS0013 - Rev 8 page 3/31
auntsTuav ¢Us auuwswnnu n 1| DUTPUT WW 4>¢ rug axuuLaw nus calm a nus nuTPur svasa saunr CIRCUIT TRDNSEDNDHCTQNEE LEVEL SHIFTJNE DRUIEETJDN INDUY swag; stuns
3Block diagram
Figure 3. Block diagram
TDA7294
Block diagram
DS0013 - Rev 8 page 4/31
4Maximum ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VSSupply voltage (no signal) ± 50 V
IOOutput peak current 10 A
Ptot Total power dissipation (Tcase= 70 °C) 50 W
Top Operating ambient temperature range 0 to 70 °C
Tstg Storage temperature
150 °C
TjJunction temperature
Table 2. Thermal data
Symbol Parameter Value Unit
Rth-jcase Thermal resistance junction-case 1.5 °C/W
TDA7294
Maximum ratings
DS0013 - Rev 8 page 5/31
5Electrical characteristics
Refer to the test circuit VS = ± 35 V, RL = 8 Ω, GV = 30 dB; Rg = 50 Ω; Tamb = 25 °C, f = 1 kHz; unless otherwise
specified.
Table 3. Electrical characteristics
Symbol Parameter Test condition Min. Typ. Max. Unit
VSSupply range 10 40 V
IqQuiescent current 20 30 65 mA
IbInput bias current 500 nA
VOS Input offset voltage ±10 mV
IOS Input offset current ±100 nA
PO
RMS continuous output power
d = 0.5%:
VS = ± 35 V, RL = 8 Ω
VS= ± 31 V, RL = 6 Ω
VS = ± 27 V, RL = 4 Ω
60
60
60
70
70
70
W
W
W
Music Power (RMS)
IEC268.3 RULES - ∆t = 1 s (1)
d = 10%
RL = 8 Ω; VS = ± 38 V
RL = 6 ; VS = ± 33 V
RL = 4 Ω; VS = ± 29 V (2)
100
100
100
W
W
W
dTotal harmonic distortion (3)
PO = 5 W; f = 1 kHz
PO = 0.1 to 50 W; f = 20 Hz to 20 kHz
0.005
0.1
%
%
VS = ± 27 V, RL = 4 Ω
PO = 5 W; f = 1 kHz
PO = 0.1 to 50 W; f = 20 Hz to 20 kHz
0.01
0.1
%
%
SR Slew rate 7 10 V/μs
GV
Open loop voltage gain 80 dB
Closed loop voltage gain 24 30 40 dB
eNTotal input noise A = curve
f = 20 Hz to 20 kHz
1
2 5 μV
fL, fHFrequency response (-3 dB) PO = 1 W 20 Hz to 20 kHz
RiInput resistance 100 kΩ
SVR Supply voltage rejection f = 100 Hz; Vripple = 0.5 Vrms 60 75 dB
TSThermal shutdown 145 °C
Stand-by function (Ref: -VS or GND)
VST on Stand-by on threshold 1.5 V
VST off Stand-by off threshold 3.5 V
ATTst-by Stand-by attenuation 70 90 dB
Iq st-by Quiescent current @ Stand-by 1 3 mA
Mute function (Ref: -VS or GND)
TDA7294
Electrical characteristics
DS0013 - Rev 8 page 6/31
Symbol Parameter Test condition Min. Typ. Max. Unit
VMon Mute on threshold 1.5 V
VMoff Mute off threshold 3.5 V
ATTmute Mute attenuation 60 80 dB
1. MUSIC POWER CONCEPT - MUSIC POWER is the maximal power which the amplifier is capable of
producing across the rated load resistance (regardless of non linearity) 1 sec after the application of a
sinusoidal input signal of frequency 1 kHz.
2. Limited by the max. allowable current.
3. Tested with optimized application board (see Figure 4).
TDA7294
Electrical characteristics
DS0013 - Rev 8 page 7/31
l? TBA 72" ms . uu
6PCB and components
Figure 4. PCB.and components layout of the circuit of figure below. (1:1 scale)
Note: The Stand-by and Mute functions can be referred either to GND or -VS.
On the PCB is possible to set both the configuration through the jumper J1.
TDA7294
PCB and components
DS0013 - Rev 8 page 8/31
7Application suggestion
The recommended values of the external components are those shown on the application circuit of Figure 1.
Different values can be used; the following table can help the designer.
COMPONENTS SUGGESTED
VALUE PURPOSE LARGER THAN
SUGGESTED
SMALLER THAN
SUGGESTED
R1 (1) 22 kΩ INPUT RESISTANCE INCREASE INPUT
IMPEDANCE
DECREASE INPUT
IMPEDANCE
R2 680 Ω CLOSED LOOP GAIN SET
TO 30 dB (2)
DECREASE OF GAIN INCREASE OF GAIN
R3 (1) 22 kΩ INCREASE OF GAIN DECREASE OF GAIN
R4 22 kΩ ST-BYTIME CONSTANT LARGERST-BY ON/OFF
TIME
SMALLER ST-BY ON/OFF
TIME; POP NOISE
R5 10 kΩ MUTE TIME CONSTANT LARGER MUTE ON/OFF
TIME
SMALLER MUTE ON/OFF
TIME
C1 0.47 μF INPUT DC DECOUPLING HIGHER LOW
FREQUENCY CUTOFF
C2 22 μF FEEDBACK DC
DECOUPLING
HIGHER LOW
FREQUENCY CUTOFF
C3 10 μF MUTETIME CONSTANT LARGER MUTE ON/OFF
TIME
SMALLER MUTE ON/OFF
TIME
C4 10 μF ST-BYTIME CONSTANT LARGERST-BY ON/OFF
TIME
SMALLERST-BY ON/OFF
TIME; POP NOISE
C5 22 μF BOOT STRAPPING SIGNAL DEGRADATION AT
LOW FREQUENCY
C6, C8 1000 μF SUPPLY VOLTAGE
BYPASS
DANGER OF
OSCILLATION
C7, C9 0.1 μF SUPPLY VOLTAGE
BYPASS
DANGER OF
OSCILLATION
1. R1= R3 for pop optimization.
2. Closed loop gain has to be 24 dB.
TDA7294
Application suggestion
DS0013 - Rev 8 page 9/31
TH D. (as) 123 ‘0 111] m vs: +/- 35 v as IHD=‘O% ‘ “FEW" EC] 71] EU SC] M] SC] 20 10 0‘ THD=uh% Um a 0001 1012‘41618 20 22 24 26 25 30 32 34 36 35 40 0 Vs (+lrv1 Pam (W) (9%) H0 ‘0' «00 90 VS: +/, 77 V 50 THD=10 as ‘ R“ " 0”" 70 so 50 40 30 20 10 '=2u KHZ 3.1 cm 0 (Jam 10 o Vs my) Pox: (m
8Typical characteristics
Application circuit of fig 1 unless otherwise specified.
Figure 5. Output power vs. supply voltage (RI = 8 Ω) Figure 6. Distortion vs. output power (RI = 8 Ω)
Figure 7. Output power vs. supply voltage (RI = 4 Ω) Figure 8. Distortion vs. output power (RI = 4 Ω)
TDA7294
Typical characteristics
DS0013 - Rev 8 page 10/31
TH.D. (as) TH‘D‘ 1%) ‘0 H: vs: +/r 35v ‘ vs: 4472/ v 1 R\= sonm R\= 4 0m 01 on 3Cu1=100 mW Poul=mfl mW 0.31 om 0001 n m 01 1 m 0110301 0.1 1 10 Fvequency (my) Fvquency [KHz] 5w as ‘Q (WAD a L ) 511 45 4D as “ ~\\\\\ so an ‘ ‘ 25 780 23 , CU 1012‘4-5‘5 20 22 24 25 23 an 32 34 as as 40 cm 01 1 «1 Vs (+/r\0 Fvemamy (
Figure 9. Distortion vs. frequency (RI = 8 Ω) Figure 10. Distortion vs. frequency (RI = 4 Ω)
Figure 11. Quiescent current vs. supply voltage Figure 12. Supply voltage rejection vs. frequency
TDA7294
Typical characteristics
DS0013 - Rev 8 page 11/31
Ausnuamn (as) Pmss (W) HI: 4 Ohm q: ‘ KH7 2 Vs=+ms v a 65—1 w (=1 KHZ 25 3 '35 4 4.5 m 10 (V) Vs=+/-30 v Pam (W) mo 90 50 70 ea 50 40 so 20 10 Anemalion (as) 00.5 ‘ ‘5 Puiss (W) 48 44 40 35 32 25 24 20 ‘5 0 90A R‘: 8 Ohm ,_ 1 KH7 2 vs=+/35V V=I KHz o dfi=1 w 2.5 3 3.5 4 45 megm Vs: +/r 40v 10 ”out (W) 100
Figure 13. Mute attenuation vs. Vpin10 Figure 14. St-by attenuation vs. Vpin9
Figure 15. Power dissipation vs. output power (RI = 4 Ω) Figure 16. Power dissipation vs. output power (RI = 8 Ω)
TDA7294
Typical characteristics
DS0013 - Rev 8 page 12/31
9Introduction
In consumer electronics, an increasing demand has arisen for very high power monolithic audio amplifiers able to
match, with a low cost the performance obtained from the best discrete designs.
The task of realizing this linear integrated circuit in conventional bipolar technology is made extremely difficult by
the occurence of 2nd breakdown phenomenon. It limits the safe operating area (SOA) of the power devices, and
as a consequence, the maximum attainable output power, especially in presence of highly reactive loads.
Moreover, full exploitation of the SOA translates into a substantial increase in circuit and layout complexity due to
the need for sophisticated protection circuits.
To overcome these substantial drawbacks, the use of power MOS devices, which are immune from secondary
breakdown is highly desirable.
The device described has therefore been developed in a mixed bipolar-MOS high voltage technology called BCD
100.
9.1 Output stage
The main design task one is confronted with while developing an integrated circuit as a power operational
amplifier, independently of the technology used, is that of realizing the output stage.
The solution shown as a principle shematic by Figure 17 represents the DMOS unity-gain output buffer of the
TDA7294.
This large-signal, high-power buffer must be capable of handling extremely high current and voltage levels while
maintaining acceptably low harmonic distortion and good behaviour over frequency response; moreover, an
accurate control of quiescent current is required.
A local linearizing feedback, provided by differential amplifier A, is used to fullfil the above requirements, allowing
a simple and effective quiescent current setting.
Proper biasing of the power output transistors alone is however not enough to guarantee the absence of
crossover distortion.
While a linearization of the DC transfer characteristic of the stage is obtained, the dynamic behaviour of the
system must be taken into account.
A significant aid in keeping the distortion contributed by the final stage as low as possible is provided by the
compensation scheme, which exploits the direct connection of the Miller capacitor at the amplifier’s output to
introduce a local AC feedback path enclosing the output stage itself.
9.2 Protections
In designing a power IC, particular attention must be reserved to the circuits devoted to protection of the device
from short circuit or overload conditions.
Due to the absence of the 2nd breakdown phenomenon, the SOA of the power DMOS transistors is delimited only
by a maximum dissipation curve dependent on the duration of the applied stimulus.
In order to fully exploit the capabilities of the power transistors, the protection scheme implemented in this device
combines a conventional SOA protection circuit with a novel local temperature sensing technique which "
dynamically" controls the maximum dissipation.
TDA7294
Introduction
DS0013 - Rev 8 page 13/31
Figure 17. Principle schematic of a DMOS unity-gain buffer
TDA7294
Protections
DS0013 - Rev 8 page 14/31
\/ MVMMVAM A A A“ [\A W VV VV 'AmflAA/t A /\ v V VV
Figure 18. Turn ON/OFF suggested sequence
PLAY
OFF
ST-BY
MUTE MUTE
ST-BY OFF
5V
5V
+Vs
(V)
+35
-35
VMUTE
PIN #10
(V)
VST-BY
PIN #9
(V)
-Vs
VIN
(mV)
IP
(mA)
VOUT
(V)
In addition to the overload protection described above, the device features a thermal shutdown circuit which
initially puts the device into a muting state (@ Tj = 145 °C) and then into stand-by (@ Tj = 150 °C).
Full protection against electrostatic discharges on every pin is included.
Figure 19. Single signal ST-BY/MUTE control circuit
1N4148
10K 30K
20K
10µF10µF
MUTE STBY
MUTE/
ST-BY
TDA7294
Protections
DS0013 - Rev 8 page 15/31
9.3 Other features
The device is provided with both stand-by and mute functions, independently driven by two CMOS logic
compatible input pins.
The circuits dedicated to the switching on and off of the amplifier have been carefully optimized to avoid any kind
of uncontrolled audible transient at the output.
The sequence that we recommend during the ON/OFF transients is shown by Figure 18.
The application of Figure 19 shows the possibility of using only one command for both st-by and mute functions.
On both the pins, the maximum applicable range corresponds to the operating supply voltage.
TDA7294
Other features
DS0013 - Rev 8 page 16/31
10 Application information
High-efficiency
Constraints of implementing high power solutions are the power dissipation and the size of the power supply.
These are both due to the low efficiency of conventional AB class amplifier approaches.
Here below (Figure 18) is described a circuit proposal for a high efficiency amplifier which can be adopted for both
HI-FI and CAR-RADIO applications.
The TDA7294 is a monolithic MOS power amplifier which can be operated at 80 V supply voltage (100 V with no
signal applied) while delivering output currents up to ± 10 A.
This allows the use of this device as a very high power amplifier (up to 180 W as peak power with
T.H.D. = 10 % and Rl = 4 Ohm); the only drawback is the power dissipation, hardly manageable in the above
power range.
Figure 22 shows the power dissipation versus output power curve for a class AB amplifier, compared with a high
efficiency one.
In order to dimension the heatsink (and the power supply), a generally used average output power value is one
tenth of the maximum output power at T.H.D. = 10 %.
From Figure 22, where the maximum power is around 200 W, we get an average of 20 W, in this condition, for a
class AB amplifier the average power dissipation is equal to 65 W.
The typical junction-to-case thermal resistance of the TDA7294 is 1 °C/W (max= 1.5 °C/W). To avoid that, in worst
case conditions, the chip temperature exceedes 150 °C, the thermal resistance of the heatsink must be 0.038
°C/W (@ max ambient temperature of 50 °C).
As the above value is pratically unreachable; a high efficiency system is needed in those cases where the
continuous RMS output power is higher than 50-60 W.
The TDA7294 was designed to work also in higher efficiency way.
For this reason there are four power supply pins: intended for the signal part and two for the power part.
T1 and T2 are two power transistors that only operate when the output power reaches a certain threshold (e.g. 20
W). If the output power increases, these transistors are switched on during the portion of the signal where more
output voltage swing is needed, thus "bootstrapping" the power supply pins (#13 and #15).
The current generators formed by T4, T7, zener diodes Z1,Z2 and resistors R7, R8 define the minimum drop
across the power MOS transistors of the TDA7294. L1, L2, L3 and the snubbers C9, R1 and C10, R2 stabilize the
loops formed by the "bootstrap" circuits and the output stage of the TDA7294.
TDA7294
Application information
DS0013 - Rev 8 page 17/31
momma—2mm
Figure 20. High efficiency application circuit
TDA7294
3
1
4
137
8 15
2
14
6
10
R3 680 C11 22 µF
L3 5µH
270
R16
13K
C15
22µF
9
R16
13K
C13 10µF
R13 20K
C11 330nF
R15 10K
C14
10µF
R14 30K
D5
1N4148
PLAY
ST-BY
270
L1 1µH
T1
BDX53A
T3
BC394
D3 1N4148
R4
270
R5
270
T4
BC393
T5
BC393
R6
20K
R7
3.3K
C16
1.8nF
R8
3.3K
C17
1.8nF
Z2 3.9V
Z1 3.9V
L2 1µH
270
D4 1N4148
D2 BYW98100
R1
2
R2
2
C9
330nF
C10
330nF
T2
BDX54A T6
BC393
T7
BC394
T8
BC394
R9
270
R10
270
R11
29K
OUT
INC7
100nF
C5
1000µF
C8
100nF
C6
1000µF
C1
1000µF
C2
1000µF
C3
100nF
C4
100nF
+40V
+20V D1 BYW98100
GND
-20V
-40V
Figure 21. P.C.B. and components layout of the circuit of figure 18 (1:1 scale)
TDA7294
Application information
DS0013 - Rev 8 page 18/31
In Figure 23, Figure 24 the performances of the system in terms of distortion and output power at various
frequencies (measured on PCB shown in Figure 21) are displayed.
The output power that the TDA7294 in highefficiency application is able to supply at Vs = + 40 V / + 20 V / - 20 V /
- 40 V; f = 1 kHz is:
- Pout = 150 W @ T.H.D. = 10 % with Rl = 4 Ω
- Pout = 120 W @ T.H.D. = 1 % with Rl = 4 Ω
- Pout = 100 W @ T.H.D. = 10 % with Rl = 8 Ω
- Pout = 80 W @ T.H.D. = 10 % with Rl = 8 Ω
Results from efficiency measurements (4 and 8 Ω loads, Vs = ± 40 V) are shown by figures Figure 25 and
Figure 26. We have 3 curves: total power dissipation, power dissipation of the TDA7294 and power dissipation of
the darlingtons.
By considering again a maximum average output power (music signal) of 20 W, in case of the high efficiency
application, the thermal resistance value needed from the heatsink is 2.2 °C / W (Vs = ± 40 V and Rl = 4 Ω).
All components (TDA7294 and power transistors T1 and T2) can be placed on a 1.5 °C / W heatsink, with the
power darlingtons electrically insulated from the heatsink.
Since the total power dissipation is less than that of a usual class AB amplifier, additional cost savings can be
obtained while optimizing the power supply, even with a high headroom.
TDA7294
Application information
DS0013 - Rev 8 page 19/31
mm (W) ‘00 so v= LADV 80 m: 4 um 70 60 50 4o 30 20 10 a Paul (W) THU (an) 10 Vs: Hanan/72mm m: 5 Own 01 cm mum a Fan (W) T.H D. (is) u) V57 + 40/+20/-2a/-40 W = A Ohm u 1 mm c cm 0 Paul (W) mm (W) 1 no so v=+/- 40 v 30 R‘: 4 Ohm 7o 50 40 30 20 1 0 Pan! (W) 10 20 30 40 50 at) 70 BO 90100110120133140‘50 F‘dwss‘ Tntal Pd‘ss. Da’HHgIOHS Pdiss. TBA/29A mo
Figure 22. Power dissipation vs. output power (RI = 4 Ω)
HIGH-EFFICIENCY
Figure 23. Distortion vs. output power (RI = 4 Ω)
Figure 24. Distortion vs. output power (RI = 8 Ω) Figure 25. Power dissipation vs. output power (RI = 4 Ω)
TDA7294
Application information
DS0013 - Rev 8 page 20/31
m Puu| (W) Pdlss Tow Pmss Damnglans Pdlss‘ TDA7294 100
Figure 26. Power dissipation vs. output power (RI = 8 Ω)
TDA7294
Application information
DS0013 - Rev 8 page 21/31
11 Bridge application
Another application suggestion is the BRIDGE configuration, where two TDA7294 are used, as shown by the
schematic diagram of Figure 27.
In this application, the value of the load must not be lower than 8 Ω for dissipation and current capability reasons.
A suitable field of application includes HI-FI/TV subwoofers realizations.
The main advantages offered by this solution are:
- High power performances with limited supply voltage level.
- Considerably high output power even with high load values (i.e. 16 Ω).
The characteristics shown by Figure 29 and Figure 30, measured with loads respectively 8 Ω and 16 Ω.
With Rl = 8 Ω, Vs = ± 25 V the maximum output power obtainable is 150 W, while with Rl = 16 Ω, Vs = ± 35 V the
maximum Pout is 170 W.
Figure 27. Bridge application circuit
22K0.56µF
2200µF0.22µF
TDA7294
+
-
22µF
22K
680
22K
3
1
4
137
+Vs
Vi
815
2
14
6
10 9
+
-
3
0.56µF 22K
1
4
2
14
6
22µF
22K
680
10 9
22µF
15 8
-Vs
2200µF 0.22µF
22µF
20K
10K 30K
1N4148
ST-BY/MUTE
TDA7294
137
TDA7294
Bridge application
DS0013 - Rev 8 page 22/31
AMPanan mm) ‘0 TH D (‘36) ‘ vs=+/r 25 v ‘ RI: 8 Ohm / um 0.0m O 20 40 60 80 V00 l20 MO ‘60 PauHW) 74 o m 0.1 ‘ u) we FREQUENCY [KHz] THC (as) 10 vs +/735v 1 WOW“ 0.‘ 0.01 «#tz mm 0 9L) 40 60 BO ‘01] 190 ‘40 ‘60 180 Pm (w;
Figure 28. Frequency response of the bridge application Figure 29. Distortion vs. output power (RI = 8 Ω)
Figure 30. Distortion vs. output power (RI = 16 Ω)
TDA7294
Bridge application
DS0013 - Rev 8 page 23/31
12 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
TDA7294
Package information
DS0013 - Rev 8 page 24/31
J 3 i # 0 WA m X] 1 {I G m, O 3 ._ Z S N.—
12.1 Multiwatt15 V package information
Figure 31. Multiwatt15 V package outline
Table 4. Multiwatt15 V mechanical data
Dim.
mm
Min. Typ. Max.
A5
B 2.65
C 1.6
D 1
E 0.49 0.55
F 0.66 0.75
G 1.02 1.27 1.52
G1 17.53 17.78 18.03
H1 19.6
H2 20.2
L 21.9 22.2 22.5
L1 21.7 22.1 22.5
L2 17.65 18.1
L3 17.25 17.5 17.75
L4 10.3 10.7 10.9
L7 2.65 2.9
M 4.25 4.55 4.85
M1 4.63 5.08 5.53
S 1.9 2.6
S1 1.9 2.6
Diam. 1 3.65 3.85
TDA7294
Multiwatt15 V package information
DS0013 - Rev 8 page 25/31
12.2 Multiwatt15 H package information
Figure 32. Multiwatt15 H package outline
Table 5. Multiwatt15 H mechanical data
Dim.
mm
Min. Typ. Max.
A5.00
B 2.65
C 1.60
E 0.49 0.55
F 0.66 0.75
G 1.02 1.27 1.52
G1 17.53 17.78 18.03
H1 19.60 20.20
H2 19.60 20.20
L1 17.80 18.0 18.20
L2 2.30 2.50 2.80
L3 17.25 17.50 17.75
L4 10.3 10.70 10.90
L5 2.70 3.00 3.30
L7 2.65 2.90
R 1.50
S 1.90 2.60
S1 1.90 2.60
Diam. 1 3.65 3.85
TDA7294
Multiwatt15 H package information
DS0013 - Rev 8 page 26/31
Revision history
Table 6. Document revision history
Date Version Changes
Apr-2003 7 First issue in EDOCS DMS.
31-Jul-2020 8 Updated Section 12.2 Multiwatt15 H package information.
TDA7294
DS0013 - Rev 8 page 27/31
Contents
1Typical application.................................................................2
2Pin connection ....................................................................3
3Block diagram .....................................................................4
4Maximum ratings ..................................................................5
5Electrical characteristics...........................................................6
6PCB and components..............................................................8
7Application suggestion ............................................................9
8Typical characteristics ............................................................10
9Introduction ......................................................................13
9.1 Output stage .................................................................13
9.2 Protections ...................................................................13
9.3 Other features ................................................................16
10 Application information...........................................................17
11 Bridge application ................................................................22
12 Package information..............................................................24
12.1 Multiwatt15 leads package information ...........................................25
12.2 Multiwatt15 H package information ...............................................26
Revision history .......................................................................27
TDA7294
Contents
DS0013 - Rev 8 page 28/31
List of tables
Table 1. Absolute maximum ratings .............................................................5
Table 2. Thermal data.......................................................................5
Table 3. Electrical characteristics ...............................................................6
Table 4. Multiwatt15 V mechanical data ......................................................... 25
Table 5. Multiwatt15 H mechanical data ......................................................... 26
Table 6. Document revision history ............................................................. 27
TDA7294
List of tables
DS0013 - Rev 8 page 29/31
List of figures
Figure 1. Typical application and test circuit .......................................................2
Figure 2. Pin connection (top view) .............................................................3
Figure 3. Block diagram ....................................................................4
Figure 4. PCB.and components layout of the circuit of figure below. (1:1 scale) ..............................8
Figure 5. Output power vs. supply voltage (RI = 8 Ω) ............................................... 10
Figure 6. Distortion vs. output power (RI = 8 Ω) ................................................... 10
Figure 7. Output power vs. supply voltage (RI = 4 Ω) ............................................... 10
Figure 8. Distortion vs. output power (RI = 4 Ω) ................................................... 10
Figure 9. Distortion vs. frequency (RI = 8 Ω) ..................................................... 11
Figure 10. Distortion vs. frequency (RI = 4 Ω) ..................................................... 11
Figure 11. Quiescent current vs. supply voltage .................................................... 11
Figure 12. Supply voltage rejection vs. frequency ................................................... 11
Figure 13. Mute attenuation vs. Vpin10........................................................... 12
Figure 14. St-by attenuation vs. Vpin9 ........................................................... 12
Figure 15. Power dissipation vs. output power (RI = 4 Ω).............................................. 12
Figure 16. Power dissipation vs. output power (RI = 8 Ω).............................................. 12
Figure 17. Principle schematic of a DMOS unity-gain buffer ............................................ 14
Figure 18. Turn ON/OFF suggested sequence ..................................................... 15
Figure 19. Single signal ST-BY/MUTE control circuit ................................................. 15
Figure 20. High efficiency application circuit....................................................... 18
Figure 21. P.C.B. and components layout of the circuit of figure 18 (1:1 scale) ............................... 18
Figure 22. Power dissipation vs. output power (RI = 4 Ω).............................................. 20
Figure 23. Distortion vs. output power (RI = 4 Ω) ................................................... 20
Figure 24. Distortion vs. output power (RI = 8 Ω) ................................................... 20
Figure 25. Power dissipation vs. output power (RI = 4 Ω).............................................. 20
Figure 26. Power dissipation vs. output power (RI = 8 Ω).............................................. 21
Figure 27. Bridge application circuit ............................................................ 22
Figure 28. Frequency response of the bridge application .............................................. 23
Figure 29. Distortion vs. output power (RI = 8 Ω) ................................................... 23
Figure 30. Distortion vs. output power (RI = 16 Ω) .................................................. 23
Figure 31. Multiwatt15 V package outline ........................................................ 25
Figure 32. Multiwatt15 H package outline ........................................................ 26
TDA7294
List of figures
DS0013 - Rev 8 page 30/31
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
TDA7294
DS0013 - Rev 8 page 31/31