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Datenblatt für IPx054,57N08N3 G von Infineon Technologies
(ifineon/
dram
pm 2
Gate
pm 1
Source
pm 3
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
"%&$!"#™3 Power-Transistor
Features
Q' 3 81>>5<>? B=1<<5F5<
Q H3 5<<5>D71D53 81B75HR9H"[Z#@B? 4E3 D ( &
Q.5BI<? G? >B5C9CD1>3 5R9H"[Z#
Q T ? @5B1D9>7D5=@5B1DEB5
Q)2 6B55<514@<1D9>7+ ? " ,3 ? =@<91>D
Q* E1<9695413 3 ? B49>7D? $ )#6? BD1B75D1@@<93 1D9? >
Q#451<6? B89786B5AE5>3 ICG9D3 89>71>4CI>3 8B? >? ECB53 D9693 1D9? >
Q" 1<? 75>6B5513 3 ? B49>7D? #
Maximum ratings, 1DTV T E><5CC? D85BG9C5C@53 96954
Parameter Symbol Conditions Unit
? >D9>E? EC4B19>3 EBB5>D I9T8 T *# 0( 6
T8 T 0(
)E<C544B19>3 EBB5>D
*# I9$\aX_Q T8 T +*(
F1<1>3 855>5B7IC9>7<5@E<C5 E6H I9 R=H "*)( Y@
!1D5C? EB3 5F? <D175 V=H q*( J
)? G5B49CC9@1D9? > P`[` T8 T )-( K
( @5B1D9>71>4CD? B175D5=@5B1DEB5 TVT_`S T
# 3 <9=1D93 3 1D57? BI #' #
Value
V9H 0( J
R ,? >=1H, & -&, Y"
I90( 6
Product Summary
Type #) ) ' ' ! #)# ' ' ! #) ' ' !
Package E=%ID**(%+ E=%ID*.*%+ E=%ID*.+%+
Marking (-/C(0C (-/C(0C (-,C(0C
@B5F9? EC5>79>55B9>7
C1=@<53 ? 45C
?EE(.8C(0C
+ 5F @175
./
Infineon
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
-85B=1<B5C9CD1>3 5:E>3 D9? >3 1C5 R`T@8 % % ) A'K
-85B=1<B5C9CD1>3 5 R`T@6 =9>9=1<6? ? D@B9>D
:E>3 D9? >1=2 95>D 3 =*3 ? ? <9>71B51+# % % ,(
Electrical characteristics, 1DTV T E><5CC? D85BG9C5C@53 96954
Static characteristics
B19>C? EB3 52 B51;4? G>F? <D175 V"7G#9HH V=H . I9 = 0( % % J
!1D5D8B5C8? <4F? <D175 V=H"`T# V9H4V=HI9 V * *&0 +&-
05B? 71D5F? <D1754B19>3 EBB5>D I9HH
V9H . V=H .
TV T % (&) ) r6
V9H . V=H .
TV T % )( )((
!1D5C? EB3 5<51;1753 EBB5>D I=HH V=H . V9H . % ) )(( Z6
B19>C? EB3 5? >CD1D5B5C9CD1>3 5 R9H"[Z# V=H .I9 % ,&1 -&/ Y"
V=H . I9 % .&+ 1&1
B19>C? EB3 5? >CD1D5B5C9CD1>3 5 R9H"[Z#
V=H . I9
"HB9# % ,&. -&,
V=H . I9
"HB9# % .&( 1&.
!1D5B5C9CD1>3 5 R=% *&* % "
I^MZ_O[ZPaO`MZOQ gR_
gV9Hg5*gI9gR9H"[Z#YMd
I9 -* )(+ % H
)#$ , - 1>4$ ,
+# 5F93 5? > ==H ==H ==5@? HI) + G9D8 3 =
*? >5<1I5B V =D893 ;3 ? @@5B1B516? B4B19>
3 ? >>53 D9? >) 9CF5BD93 1<9>CD9<<19B
Values
*#, 55697EB5
+ 5F @175
./
Infineon
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
#>@ED3 1@13 9D1>3 5 CU__ % +-/( ,/-( \<
( ED@ED3 1@13 9D1>3 5 C[__ % 1.+ )*0(
+ 5F5BC5DB1>C65B3 1@13 9D1>3 5 C^__ % +. -,
-EB>? >45<1ID9=5 tP"[Z# % )0 % Z_
+ 9C5D9=5 t^% .. %
-EB>? 6645<1ID9=5 tP"[RR# % +0 %
1<<D9=5 tR% )( %
!1D5 81B
S
5 81B13 D5B9CD93 C
,#
!1D5D? C? EB3 53 81B75 QS_ % )1 *- Z8
!1D5D? 4B19>3 81B75 QSP % )) ).
,G9D3 89>73 81B75 Q_c % )1 */
!1D53 81B75D? D1< QS% -* .1
!1D5@<1D51EF? <D175 V\XM`QMa % -&* % J
( ED@ED3 81B75 Q[__ V99 . V=H . % /( 1+ Z8
Reverse Diode
9? 453 ? >D9>? EC6? BG1B43 EBB5>D IH% % 0( 6
9? 45@E<C53 EBB5>D IH$\aX_Q % % +*(
9? 456? BG1B4F? <D175 VH9
V=H . I<
TV T % )&( )&* J
+ 5F5BC5B53 ? F5BID9=5 t^^ % /* % Z_
+ 5F5BC5B53 ? F5BI3 81B75 Q^^ % )+( % Z8
,#, 55697EB5 6? B71D53 81B75@1B1=5D5B4569>9D9? >
VG . I<4IH
Pi<'Pt V C
T8 T
Values
V=H . V9H .
f & " J
V99 . V=H .
I9 R= "
V99 . I9
V=H D? .
+ 5F @175
@neon
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
1 Power dissipation 2 Drain current
P`[`4R"T8#I94R"T8V=H" .
3 Safe operating area 4 Max. transient thermal impedance
I94R"V9HT8 T D4( Z`T@84R"t\#
@1B1=5D5Bt\@1B1=5D5BD4t\'T
V C
V C
V C
=C
=C
98
103
102
101
100
102
101
100
10-1
VDS [V]
ID[A]
<9=9D542 I? >CD1D5
^Q_U_`MZOQ
C9>7<5@E<C5
(&()
(&(*
(&(-
(&)
(&*
(&-
101
100
10-1
10-2
100
10-1
10-2
10-3
10-4
10-5
tp[s]
ZthJC [K/W]
0
30
60
90
120
150
180
0 50 100 150 200
TC[°C]
Ptot [W]
0
20
40
60
80
100
0 50 100 150 200
TC[°C]
ID[A]
+ 5F @175
L
k
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I94R"V9HTV T R9H"[Z#4R"I9TV T
@1B1=5D5BV=H @1B1=5D5BV=H
7 Typ. transfer characteristics 8 Typ. forward transconductance
I94R"V=HKV9Hg5*gI9gR9H"[Z#YMd gR_4R"I9TV T
@1B1=5D5BTV
. . .
.
.
.
.
.
0
4
8
12
16
20
0 40 80 120 160
ID[A]
RDS(on) [m ]
T
T
0
30
60
90
120
150
180
02468
VGS [V]
ID[A]
0
40
80
120
160
0 40 80 120 160
ID[A]
gfs [S]
.
.
.
.
.
.
.
.
0
40
80
120
160
200
240
280
320
012345
VDS [V]
ID[A]
+ 5F @175
\
E
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R9H"[Z#4R"TVI9 V=H . V=H"`T#4R"TVV=H4V9H
@1B1=5D5BI9
11 Typ. capacitances 12 Forward characteristics of reverse diode
C4R"V9HV=H .f & " J I<4R"VH9#
@1B1=5D5BTV
`e\
0
2
4
6
8
10
12
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [m ]
V
V
0
1
2
3
4
-60 -20 20 60 100 140 180
Tj[°C]
VGS(th) [V]
8U__
8[__
8^__
104
103
102
101
0 20 40 60 80
VDS [V]
C[pF]
T
T
T
T
103
102
101
100
0 0.5 1 1.5 2
VSD [V]
IF[A]
+ 5F @175
./
Infineon
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
13 Avalanche characteristics 14 Typ. gate charge
I6H4R"t6JR=H "V=H4R"QSM`QI9 @E<C54
@1B1=5D5BTV"_`M^`# @1B1=5D5BV99
15 Drain-source breakdown voltage 16 Gate charge waveforms
V7G"9HH#4R"TVI9 =
.
.
.
0
2
4
6
8
10
12
0 20 40 60
Qgate [nC]
VGS [V]
60
65
70
75
80
85
90
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS) [V]
V
=H
Q
gate
V
S _"`T#
Q
S"`T#
Q
S _
Q
S P
Q
_c
Q
g
T
T
T
1
10
100
0.1 1 10 100 1000
tAV [µs]
IAV [A]
+ 5F @175
F 1
FOOTFRINT F 7
mm wwusmzs mwss
MIN MAX MIN MAX
A 1 an 4.57 0.169 n 150
A1 mm 11.25 0000 n me
n 0.55 0.15 ooze u m DDCUMENY no.
1.2 u 95 1 15 0031 a 045 zxanmmaau
c n :3 0.65 a ma 0 026
:2 1.17 1411 am M55 SCALE “
n 3.51 us 0335 n :12
171 7.10 7.91: 0261) u :11 1
E 9 w 10 31 0386 u :06 D 5
E1 3.50 am 0256 a 3:19 . ?
. 2.51 0.100 ‘
.1 01: 0.200 7 5"""
" 2 2 EUROPEAN pwzcnou
11 14e1 15 as 0575 u 625
L 2 29 :1 on 11 am a 111
L1 9 m 1 an a 1225 n ma
L2 1 an 1 n 0,039 a 070
n 15 US 15 25 0332 u w
s: a so a 5n case n 171 ms“ nu:
r: 1 an 4 7a a 177 a 1115 mommy
u m m mm 0,121 a 129
is 3.65 :1 as 0144 u 152 ““510"
u 1.25 145 0949 u 057 “1
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
PG-TO263-3 (D²-Pak)
+ 5F @175
Inf
L2
D1
E1
h1
L1
HILLIIETERS
MW
4 300
‘
o 550
o 535
o 330
mm
a son
a mu
5 500
MAX
t 572
1
0.664
1 we
a 600
1.400
REFERENCE
JEDEC r0252
a
25
u 25
5mm
EUREPEAN PRDJECTIDN
€r@
ISSUE DATE
alumna:
FILE
“12524
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
PG-TO262-3 (I²-Pak)
+ 5F @175
um MILLMHEns muss
MIN MAX MIN MAX mcuMEm no.
A 4.312 4 57 a ma 0 1m) 15500003313
Al 1 17 1 m n m o 055
A1 2.15 2 72 n has mm as»; 0
a use 0.55 n ma any
m 1195 an n 037 o 055 15
n2 n35 1.15 u as? o 045
m 11.95 1.15 nnzu mm D 1’5
1: am 0.00 n ma 0 021 5",,“
n 1451 15.95 am mm
m 2.51 us a 235 M72 Emma“ PRmEc’noN
m 1219 1310 mm 0513
E 9.11) 10.35 u 532 mm:
:1 6.50 am a 255 u m
1 2 54 man
.1 5 on 12.2111:
N 3 1 ISSUE an:
m 5.90 6 90 o 232 am manna,
L 11m: uou am 0551
L1 - 4 BO - D189 EVEION
.p 3.50 3.39 a 1:1 17153 "5
o no 3.00 n 102 m 13
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
PG-TO220-3
+ 5F @175
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein
and/or any information regarding the application of the device, lnfineon Technologies hereby disclaims
any and all warranties and liabilities of any kind, including without limitation, warranties of non-
infringement of intellectual property rights of any third party.
lnfonnatlon
For further information on technology. delivery terms and conditions and prices, please contact the
nearest lnfineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements. components may contain dangerous substances. For information on
the types in question, please contact the nearest lnfineon Technologies Office. The lnfineon
Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive. aviation and aerospace applications or systems only with the express written
approval of lntineon Technologies. if a failure of such components can reasonably be expected to
cause the failure of that life-support. automotive. aviation and aerospace device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If
they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
+ 5F @175
Schweiz