Characteristics T405Q-600
2/12 DocID10368 Rev 4
1 Characteristics
Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Symbol Parameter Value Unit
IT(rms) On-state rms current (full sine wave) IPAK, DPAK Tc = 110 °C 4 A
ITSM Non repetitive surge peak on-state current (full cycle,
Tj initial = 25 °C)
tp = 20 ms 35 A
tp = 16.7 ms 38
I²tI
²t value for fusing tp = 10 ms 6 A²s
dI/dt Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns F = 100 Hz 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125 °C 4 A
PG(AV) Average gate power dissipation Tj = 125 °C 0.5 W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125 °C
VDSM,
VRSM Non repetitive surge peak off-state voltage tp = 10 ms 700 V
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)
Symbol Test conditions Quadrant Value Unit
T405Q
IGT(1)
1. Minimum IGT is guaranteed at 5% of IGT max.
VD = 12 V, RL = 30 ΩI - II - III
IV Max. 5
10 mA
VGT VD = 12 V, RL = 30 ΩAll Max. 1.3 V
VGD VD = VDRM, RL = 3.3 k Ω, Tj = 125 °C All Min. 0.2 V
IH (2)
2. For both polarities of A2 referenced to A1
IT = 100 mA Max. 10 mA
ILIG = 1.2 IGT
I - III - IV Max. 10 mA
II Max. 15
dV/dt (2) VD = 67% VDRM, gate open Tj = 125 °C Min. 10 V/µs
(dI/dt)c (2) (dV/dt)c = 2 V/µs Tj = 125 °C Min. 1.8 A/ms