Datenblatt für SUD50P10-43L von Vishay Siliconix

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Vishay Siliconix
SUD50P10-43L
Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
www.vishay.com
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P-Channel 100-V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)ID (A)aQg (Typ.)
- 100 0.043 at VGS = - 10 V - 37 54 nC
0.048 at VGS = - 4.5 V - 35
TO-252
SGD
Top View
Drain Connected to Tab
S
G
D
P-Channel MOSFET
Ordering Information: SUD50P10-43L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C
ID
- 37.1a
A
TC = 125 °C - 31a
TA = 25 °C - 9.2b, c
TA = 125 °C - 7.7b, c
Pulsed Drain Current IDM - 40
Continuous Source Current (Diode Conduction)
TC = 25 °C IS
- 50a
TA = 25 °C - 6.9b, c
Avalanche Current L = 0.1 mH IAS - 35
Single Pulse Avalanche Energy EAS 61 mJ
Maximum Power Dissipation
TC = 25 °C
PD
136
W
TC = 70 °C 95
TA = 25 °C 8.3b, c
TA = 70 °C 5.8b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Junction-to-Ambientat ≤ 10 s RthJA
15 18
°C/W
Steady State 40 50
Junction-to-Case (Drain) RthJC 0.85 1.1
RoHS
COMPLIANT
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Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
Vishay Siliconix
SUD50P10-43L
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 100 V
VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 109 mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 5.9
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 100 V, VGS = 0 V - 1 µA
VDS = - 100 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain CurrentaID(on) V
DS ≥ 5 V, VGS = - 10 V - 40 A
Drain-Source On-State ResistanceaRDS(on)
VGS = - 10 V, ID = - 9.2 A 0.036 0.043 Ω
VGS = - 4.5 V, ID = - 7.7 A 0.040 0.048
Forward Transconductanceagfs VDS = - 15 V, ID = - 9.2 A 38 S
Dynamicb
Input Capacitance Ciss
VDS = - 50 V, VGS = 0 V, f = 1 MHz
4600
pFOutput Capacitance Coss 230
Reverse Transfer Capacitance Crss 175
Total Gate Charge Qg
VDS = - 50 V, VGS = - 10 V, ID = - 9.2 A 106 160
nC
VDS = - 50 V, VGS = - 4.5 V, ID = - 9.2 A
54 81
Gate-Source Charge Qgs 14
Gate-Drain Charge Qgd 26
Gate Resistance Rgf = 1 MHz 4 Ω
Tur n - On D e lay T i me td(on)
VDD = - 50 V, RL = 6.5 Ω
ID ≅ - 7.7 A, VGEN = - 10 V, Rg = 1 Ω
15 25
ns
Rise Time tr20 30
Turn-Off Delay Time td(off) 110 165
Fall Time tf100 150
Tur n - On D e lay Ti m e td(on)
VDD = - 50 V, RL = 6.5 Ω
ID ≅ - 7.7 A, VGEN = - 4.5 V, Rg = 1 Ω
42 65
ns
Rise Time tr160 240
Turn-Off Delay Time td(off) 100 150
Fall Time tf100 150
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C - 50 A
Pulse Diode Forward CurrentaISM - 40
Body Diode Voltage VSD IS = - 7.7 A - 0.8 - 1.2 V
Body Diode Reverse Recovery Time trr
IF = - 7.7 A, dI/dt = 100 A/µs, TJ = 25 °C
60 90 ns
Body Diode Reverse Recovery Charge Qrr 150 225 nC
Reverse Recovery Fall Time ta46 ns
Reverse Recovery Rise Time tb14
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Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
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Vishay Siliconix
SUD50P10-43L
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
5
10
15
20
25
30
35
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS = 10 V thru 4 V
3 V
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
2 V
0.034
0.036
0.038
0.040
0.042
0.044
0 5 10 15 20 25 30 35
VGS = 10 V
ID
- Drain Current (A)
VGS = 4.5 V
RDS(on) - On-Resistance (Ω)
0
2
4
6
8
10
0 20406080 100 120
ID = 9.2 A
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VGS
VDS = 80 V
VDS = 50 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.00.51.01.52.02.53.03.5
TA = 125 °C
- 55 °C
VGS
- Gate-to-Source Voltage (V)
- Drain Current (A)ID
25 °C
0
1000
2000
3000
4000
5000
6000
7000
0 1020304050607080
Coss
Ciss
VDS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
Crss
0.5
0.8
1.1
1.4
1.7
2.0
2.3
- 50 - 25 0 25 50 75 100 125 150
VGS = 10 V, 4.5 V
TJ- Junction Temperature (°C)
RDS(on) - On-Resistance
(Normalized)
ID = 9.2 A
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Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
Vishay Siliconix
SUD50P10-43L
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.2
1
10
40
0.0 0.2 0.4 0.6 0.8
TJ = 25 °C
TJ = 150 °C
VSD - Source-to-Drain Voltage (V)
- Source Current (A)IS
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
- 50 - 25 0 25 50 75 100 125 150 175
ID = 250 µA
TJ - Temperature (°C)
VGS(th) (V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.02
0.03
0.04
0.05
0.06
0.07
0.08
2345678910
VGS - Gate-to-Source Voltage (V)
RDS(on) - Drain-to-Source On-Resistance (Ω)
TA= 25 °C
TA = 125 °C
0
20
35
5
10
Power (W)
Time (s)
25
10 100010.10.01
15
30
100
Safe Operating Area, Junction-to-Ambient
0.001
0.01
0.1
1
10
100
0.1 1 10 100 1000
1ms
100 ms
10 ms
TA= 25 °C
Single Pulse
100 µs
DC
BVDSS Limited
10 s
1s
VDS - Drain-to-Source Voltage (V)
*VGS > minimumVGS at which RDS(on) is specified
- Drain Current (A)
ID
Limited byR
DS(on)*
— VISHAYN V
Vishay Siliconix
SUD50P10-43L
Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
www.vishay.com
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
Single Pulse Avalance Capability
0
10
20
30
40
50
0 25 50 75 100 125 150 175
ID - Drain Current (A)
TC - Case Temperature (°C)
100
0.000001 0.0001 0.01
1
10
0.00001
TA - Time In Avalanche (s)
IC - Peak Avalanche Current (A)
TA
L IA
BV - VDD
0.001
Single Pulse Power, Junction-to-Ambient
0
20
40
60
80
100
120
140
25 50 75 100 125 150 175
TC - Case Temperature (°C)
Power
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Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
Vishay Siliconix
SUD50P10-43L
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73444.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-2 000101110-1 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10-3 10-2 110-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
Single Pulse
— VISHAY. V Com/605791000
Package Information
www.vishay.com Vishay Siliconix
Revision: 16-Dec-2019 1Document Number: 71197
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-252AA Case Outline
VERSION 1: FACILITY CODE = Y
Note
• Dimension L3 is for reference only
MILLIMETERS
DIM. MIN. MAX.
A 2.18 2.38
A1 - 0.127
b 0.64 0.88
b2 0.76 1.14
b3 4.95 5.46
C 0.46 0.61
C2 0.46 0.89
D 5.97 6.22
D1 4.10 -
E 6.35 6.73
E1 4.32 -
H 9.40 10.41
e 2.28 BSC
e1 4.56 BSC
L 1.40 1.78
L3 0.89 1.27
L4 - 1.02
L5 1.01 1.52
L3
D
L4
L5
bb2
e1
E1
D1
C
A1
gage plane height (0.5 mm)
e
b3
E
C2
A
L
H
VISHAY. w -73xb .0 25® -III3 /. \ C n," «L» /‘ pmosmcnsuggonviwshaymm www.v\shay.com/doc?91000
Package Information
www.vishay.com Vishay Siliconix
Revision: 16-Dec-2019 2Document Number: 71197
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VERSION 2: FACILITY CODE = N
Notes
• Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• Radius on terminal is optional
E
D
L3
b3
A
c2
θ
E1
D1
(3°)
(3°)
3x b
2x b2
2x
H
0.25 C A B
e
e
eE1/2
DETAIL "B"
A1
L2
L
(L1)
H
CSEATING
PLANE
C
C
(b)
c
c1
b1
DETAIL "B"
GAUGE
PLANE
L4
L5
θ
θ
L6
MILLIMETERS
DIM. MIN. MAX.
A 2.18 2.39
A1 - 0.13
b 0.65 0.89
b1 0.64 0.79
b2 0.76 1.13
b3 4.95 5.46
c 0.46 0.61
c1 0.41 0.56
c2 0.46 0.60
D 5.97 6.22
D1 5.21 -
E 6.35 6.73
E1 4.32 -
e 2.29 BSC
H 9.94 10.34
L 1.50 1.78
L1 2.74 ref.
L2 0.51 BSC
L3 0.89 1.27
L4 - 1.02
L5 1.14 1.49
L6 0.65 0.85
0° 10°
1 0° 15°
2 25° 35°
MILLIMETERS
DIM. MIN. MAX.
ECN: E19-0649-Rev. Q, 16-Dec-2019
DWG: 5347
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Application Note 826
Vishay Siliconix
Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.420
(10.668)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
0.243
(6.180)
0.087
(2.202)
0.090
(2.286)
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Revision: 01-Jan-2021 1Document Number: 91000
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