Datenblatt für BUK9245-55A von Nexperia USA Inc.

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Figure 1 Figure 3 Figure 2 Figure 11 Figure 12 nexpeﬂa

BUK9245-55A

N-channel TrenchMOS logic level FET

Rev. 02 — 31 May 2010 Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Q101 compliant

Suitable for logic level gate drive

sources

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V and 24 V loads

Automotive and general purpose

power switching

Motors, lamps and solenoids

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤175 °C - - 55 V

IDdrain current VGS =5V; T

mb =25°C;

see Figure 1; see Figure 3 --28A

Ptot total power dissipation Tmb =25°C; see Figure 2 --70W

Static characteristics

RDSon drain-source on-state

resistance VGS =10V; I

D=5A;

Tj=25°C - 2740mΩ

VGS =4.5V; I

D=5A;

Tj=25°C --50mΩ

VGS =5V; I

D=5A;

Tj=25°C; see Figure 11;

see Figure 12

- 3145mΩ

Figure 13 mb D source mounting base; connected to drain if“; $0T428 (DPA 3. Ordering information auxmsw Producl data sheel Aii mmmnamm.‘ imam-men] is “mum Rev. 02 — 31 May 2010 m Wm: a v 1m7 NI mm mm

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Product data sheet Rev. 02 — 31 May 2010 2 of 14

Nexperia BUK9245-55A

N-channel TrenchMOS logic level FET

2. Pinning information

3. Ordering information

Avalanche ruggedness

EDS(AL)S non-repetitive

drain-source avalanche

energy

ID=28A; V

sup ≤55 V;

RGS =50Ω; VGS =5V;

Tj(init) = 25 °C; unclamped

--62mJ

Dynamic characteristics

QGD gate-drain charge VGS =5V; I

D=5A;

VDS =44V; T

j=25°C;

see Figure 13

-6.3-nC

Table 1. Quick reference data …continued

Symbol Parameter Conditions Min Typ Max Unit

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

SOT428 (DPAK)

2 D drain

3Ssource

mb D mounting base; connected to

drain

bb076

Table 3. Ordering information

Type number Package

Name Description Version

BUK9245-55A DPAK plastic single-ended surface-mounted package (DPAK); 3 leads

(one lead cropped) SOT428

Figure 1 Figure 3 e Figure 1 Figure 3 e Figure 2 ID P V55 2 4.5m“, =m >< 100%="" pm,="" _="" mgr;="" x="" 100%="" am.“="" av="" mu="" m="" um;="" mm="">

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Product data sheet Rev. 02 — 31 May 2010 3 of 14

Nexperia BUK9245-55A

N-channel TrenchMOS logic level FET

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤175°C --55V

VDGR drain-gate voltage RGS =20kΩ--55V

VGS gate-source voltage -15 - 15 V

IDdrain current Tmb =25°C; V

GS =5V; see Figure 1;

see Figure 3 --28A

Tmb =100°C; V

GS =5V; see Figure 1 --20A

IDM peak drain current Tmb =25°C; t

p≤10 µs; pulsed;

see Figure 3 --112A

Ptot total power dissipation Tmb =25°C; see Figure 2 --70W

Tstg storage temperature -55 - 175 °C

Tjjunction temperature -55 - 175 °C

Source-drain diode

ISsource current Tmb =25°C --28A

ISM peak source current tp≤10 µs; pulsed; Tmb =25°C --112A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source

avalanche energy ID=28A; V

sup ≤55 V; RGS =50Ω;

VGS =5V; T

j(init) = 25 °C; unclamped --62mJ

Fig 1. Continuous drain current as a function of

mounting base temperature Fig 2. Normalized total power dissipation as a

function of mounting base temperature

03ng00

25 50 75 100 125 150 175 200

Tj (°C)

(A)

Tmb (°C)

0 20015050 100

03aa16

120

Pder

(%)

TM, = 25“(‘;13Mis single pulse .meav 2m: N‘V‘ihlsvesqmﬂ

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Product data sheet Rev. 02 — 31 May 2010 4 of 14

Nexperia BUK9245-55A

N-channel TrenchMOS logic level FET

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

03nf98

102

103

1 10 102

VDS (V)

(A)

100 ms

10 ms

RDSon = VDS / ID

1 ms

tp = 10 μs

100 μs

FxgureA .meav 2m: N‘V‘ihlsvesqmﬂ

BUK9245-55A All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 31 May 2010 5 of 14

Nexperia BUK9245-55A

N-channel TrenchMOS logic level FET

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from junction to

mounting base see Figure 4 --2.1K/W

Rth(j-a) thermal resistance from junction to

ambient - 71.4 - K/W

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

03nf99

Single Shot

0.2

0.1

0.05

0.02

10-2

10-1

10−6 10−5 10−4 10−3 10−2 10−1 1

tp (s)

Zth(j-mb)

(K/W)

δ = 0.5

δ =

Figure 10 Figure 10 Figure 10 Figure 11 see Figure 12 Figure 11 see Figure 12 Figure 13 Figure 14 Figure 15 am"... av 1m7 "mum“...

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Product data sheet Rev. 02 — 31 May 2010 6 of 14

Nexperia BUK9245-55A

N-channel TrenchMOS logic level FET

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source breakdown

voltage ID=0.25mA; V

GS =0V; T

j=25°C 55--V

ID=0.25mA; V

GS =0V; T

j= -55 °C 50 - - V

VGS(th) gate-source threshold

voltage ID=1mA; V

DS =V

GS; Tj= 175 °C;

see Figure 10 0.5--V

ID=1mA; V

DS =V

GS; Tj=25°C;

see Figure 10 11.52V

ID=1mA; V

DS =V

GS; Tj=-55°C;

see Figure 10 --2.3V

IDSS drain leakage current VDS =55V; V

GS =0V; T

j= 175 °C - - 500 µA

VDS =55V; V

GS =0V; T

j= 25 °C - 0.05 10 µA

IGSS gate leakage current VDS =0V; V

GS =10V; T

j= 25 °C - 2 100 nA

VDS =0V; V

GS =-10V; T

j= 25 °C - 2 100 nA

RDSon drain-source on-state

resistance VGS =10V; I

D=5A; T

j= 25 °C - 27 40 mΩ

VGS =5V; I

D=5A; T

j=175°C;

see Figure 11; see Figure 12 --90mΩ

VGS =4.5V; I

D=5A; T

j=25°C --50mΩ

VGS =5V; I

D=5A; T

j=25°C;

see Figure 11; see Figure 12 - 3145mΩ

Dynamic characteristics

QG(tot) total gate charge ID=5A; V

DS =44V; V

GS =5V;

Tj=25°C; see Figure 13 -14-nC

QGS gate-source charge - 1.6 - nC

QGD gate-drain charge - 6.3 - nC

Ciss input capacitance VGS =0V; V

DS =25V; f=1MHz;

Tj=25°C; see Figure 14 - 750 1006 pF

Coss output capacitance - 140 166 pF

Crss reverse transfer capacitance - 97 132 pF

td(on) turn-on delay time VDS =30V; R

L=1.2Ω; VGS =5V;

RG(ext) =10Ω; Tj=25°C -10-ns

trrise time - 132 - ns

td(off) turn-off delay time - 38 - ns

tffall time -112-ns

LDinternal drain inductance measured from drain to centre of die - 2.5 - nH

LSinternal source inductance measured from source lead to source

bond pad -7.5-nH

Source-drain diode

VSD source-drain voltage IS=8A; V

GS =0V; T

j=25°C;

see Figure 15 - 0.85 1.2 V

trr reverse recovery time IS=20A; dI

S/dt = -100 A/µs;

VGS =-10V; V

DS =30V; T

j=25°C -50-ns

Qrrecovered charge - 53 - nC

/ T,=25°c \ T, = 25°C;ID = SA T, = zsncwgs = V55 I, : 25°C”: : 25V :N-xplnaBV zuw mum 15mg

BUK9245-55A All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 31 May 2010 7 of 14

Nexperia BUK9245-55A

N-channel TrenchMOS logic level FET

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function

of gate-source; typical values

Fig 7. Sub-threshold drain current as a function of

gate-source voltage Fig 8. Forward transconductance as a function of

drain current; typical values

03nf95

0246810

VDS (V)

(A)

2.2

8VGS (V) = 10

03nf94

3691215

VGS (V)

RDSon

(mΩ)

03aa36

10-6

10-5

10-4

10-3

10-2

10-1

0123

VGS (V)

(A)

maxtypmin

03nf92

0 5 10 15 20 25

ID (A)

gfs

(S)

VD: = 25v ID = 1111A;VD5 = V55 \_ \__ \___ \___ T,=25°C a _ Rnson Rmmzs-c) “mp.“ av mu an MS 15mg

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Product data sheet Rev. 02 — 31 May 2010 8 of 14

Nexperia BUK9245-55A

N-channel TrenchMOS logic level FET

Fig 9. Transfer characteristics: drain current as a

function of gate-source voltage; typical values Fig 10. Gate-source threshold voltage as a function of

junction temperature

Fig 11. Drain-source on-state resistance as a function

of drain current; typical values Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

03nf93

01234

VGS (V)

(A)

Tj = 175 °C Tj = 25 °C

03aa33

0.5

1.5

2.5

-60 0 60 120 180

Tj (°C)

VGS(th)

(V)

max

typ

min

03nf96

100

0 20406080

ID (A)

RDSon

(mΩ)

VGS (V) = 3 3.4 3.8 45

03ne89

0.5

1.5

-60 0 60 120 180

Tj (°C)

T,=25°(‘;I_7=SA x \\ \ V65 = our = lMHz VG: : 0V :N-xplnaEV 2m: mum 15mg

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Product data sheet Rev. 02 — 31 May 2010 9 of 14

Nexperia BUK9245-55A

N-channel TrenchMOS logic level FET

Fig 13. Gate-source voltage as a function of turn-on

gate charge; typical values Fig 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Fig 15. Reverse diode current as a function of reverse diode voltage; typical values

03nf91

0 3 6 9 12 15

QG (nC)

VGS

(V)

VDD = 44 V

VDD = 14 V

03nf97

300

600

900

1200

1500

1800

2100

10−2 10−1 1 10 102

VDS (V)

(pF)

Ciss

Coss

Crss

03nf90

0.0 0.2 0.4 0.6 0.8 1.0

VSD (V)

(A)

Tj = 175 °C

Tj = 25 °C

o 5 10mm sca‘e DIMENSIONS (mm mg mg orlglnal dlmEnslnns) UNIT A A1 h b. I); c D‘ :5. E "E‘l‘" e e1 HD L "L‘l‘n L; w my“ mm 3133 332 35? é; 333 333 :33 4° :13 “5 21285 ‘57 '99: 31:: 0'5 3: 02 02 OUYLINE REFERENCES EUROPE VEnsloN .Ec JEDEC JE|YA PROJECY 50mm 70252 5063 a @ W Fig 16. Package outline SOT428 (DPAK) 5mm 55A Aumymmupmm mlmsdnzumen"xsuh‘eﬂ'u‘lgi‘d‘xch‘mev: :Nupmav 2m: N‘ughls 15mg Producl data sheel Rev. 02 — 31 May 2010

BUK9245-55A All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 31 May 2010 10 of 14

Nexperia BUK9245-55A

N-channel TrenchMOS logic level FET

7. Package outline

Fig 16. Package outline SOT428 (DPAK)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT428 SC-63

TO-252

SOT42

06-02-14

06-03-16

DIMENSIONS (mm are the original dimensions)

lastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)

mounting

base

b1c

0 5 10 mm

scale

UNIT

mm 0.93

0.46

5.46

5.00

0.56

0.20

6.22

5.98

6.73

6.47

10.4

9.6

2.95

2.55

2.38

2.22

1.1

0.9

b1e1

0.89

0.71

bcD

0.9

0.5

2.285 4.57

4.0

min

4.45

min

0.5

min

HDLw

0.2

max

0.2

alum av 1m7 "mum“...

BUK9245-55A All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 31 May 2010 11 of 14

Nexperia BUK9245-55A

N-channel TrenchMOS logic level FET

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BUK9245-55A v.2 20100531 Product data sheet - BUK9245_55A_1

Modifications: •Various changes to content.

BUK9245_55A_1 20011011 Product data - -

have changed Want an ena cam my llwww nexpena cam/pm! Aerms a mwln- a v Inn A. mm; mm

BUK9245-55A All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 31 May 2010 12 of 14

Nexperia BUK9245-55A

N-channel TrenchMOS logic level FET

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Nexperia does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use in automotive applications — This Nexperia

product has been qualified for use in automotive

applications. The product is not designed, authorized or warranted to be

suitable for use in medical, military, aircraft, space or life support equipment,

nor in applications where failure or malfunction of a Nexperia

product can reasonably be expected to result in personal injury, death or

severe property or environmental damage. Nexperia accepts no

liability for inclusion and/or use of Nexperia products in such

equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on a weakness or default in the

customer application/use or the application/use of customer’s third party

customer(s) (hereinafter both referred to as “Application”). It is customer’s

sole responsibility to check whether the Nexperia product is

suitable and fit for the Application planned. Customer has to do all necessary

testing for the Application in order to avoid a default of the Application and the

product. Nexperia does not accept any liability in this respect.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in the

Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Nexperia

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

http /www exge com salesaddresses nex e com alum av 1m7 "mum“...

BUK9245-55A All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 31 May 2010 13 of 14

Nexperia BUK9245-55A

N-channel TrenchMOS logic level FET

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from national authorities.

10. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Nexperia BUK9245-55A

N-channel TrenchMOS logic level FET

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

10 Contact information. . . . . . . . . . . . . . . . . . . . . .13

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release:

31 May 2010

Datenblatt für BUK9245-55A von Nexperia USA Inc.

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