Datenblatt für MBR835, MBR840, MBR845 von onsemi

ON Semiconductor“ AXIA - Available Tape and Reeied, 1501) per ml, by adding a “my suffix m me pan number ": 3 - Poiaiiiy: thodc indicaled by Pnlzrhy Band ' ESD Prmcclion: Human Body Model > 4001) V (Cl ‘5 3) Machine Model > 400 v (Clas' c) MAXIMUM RATINGS Rallng Symbol Max Unlt ORDERING INFURMAT Peak Repeiiiive Reverse Vollage VRRM v new“ package Working Peak Reverse Vollage vRWM DC B‘ockmg Voltage VR MERBES Axial Lead 50 MBRESS 35 MBRaAO 40 MRRsasRL Axial Lead 150 MBRBAS 45 Average Reciilied Forward Current '0 5.0 A TL : 75°C (PsiJL : iz‘C/w, PC. Board Mounting, see Note 2) Non—Repelilive Peak Surge Cuvrent IFSM 140 A (Surge Applied ai Raled Load Commons Halfwavei singie Phase, 60 Hz) Dpelafing and Slorage Junction T J, 15.9 —65 is +125 "c and hesmvmiivaiue. Tempevamre Range (Reverse Vollage Appliedl Voiiage Rate of Change (Raiea v“) dv/dt 10 V/ns Preferred devlces ave vecammended crime e Semiwnduc‘ar Camvanems \nduslnes‘ LLC‘ guns I Publicalion September, 2006 — Rev. 2
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 2
1Publication Order Number:
MBR835/D
MBR835, MBR840, MBR845
Preferred Devices
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
•High Current Capability
•Low Stored Charge, Majority Carrier Conduction
•Low Power Loss/High Efficiency
•Highly Stable Oxide Passivated Junction
•Guard−Ring for Stress Protection
•Low Forward Voltage
•High Surge Capacity
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 1.1 gram (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16″ from case
•Shipped in plastic bags, 500 per bag
•Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to
the part number
•Polarity: Cathode indicated by Polarity Band
•ESD Protection: Human Body Model > 4000 V (Class 3)
ESD Protection: Machine Model > 400 V (Class C)
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR835
MBR840
MBR845
VRRM
VRWM
VR
35
40
45
V
Average Rectified Forward Current
TL = 75°C (PsiJL = 12°C/W,
P.C. Board Mounting, see Note 2)
IO8.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM 140 A
Operating and Storage Junction
Temperature Range
(Reverse Voltage Applied)
TJ, Tstg −65 to +125 °C
Voltage Rate of Change (Rated VR) dv/dt 10 V/ns
Device Package Shipping
ORDERING INFORMATION
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AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIERS
8.0 AMPERES
Preferred devices are recommended choices for future use
and best overall value.
MBR835 Axial Lead 500 Units/Bag
MBR835RL Axial Lead 1500/Tape & Reel
MARKING DIAGRAM
MBR8xx
MBR8xx = Device Code
xx = 35, 40 or 45
MBR840 Axial Lead 500 Units/Bag
MBR840RL Axial Lead 1500/Tape & Reel
MBR845 Axial Lead 500 Units/Bag
MBR845RL Axial Lead 1500/Tape & Reel
0,1 0.2 0.3 04 0,5 06 0.7 0. 0,1 0.2 0.3 0,4 0.5 0.6 07 mi
MBR835, MBR840, MBR845
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2
THERMAL CHARACTERISTICS
Characteristic Symbol
0.9 in x 0.9 in
Copper Pad Size
6.75 in x 6.75 in
Copper Pad Size Unit
Thermal Resistance − Junction−to−Lead
(See Note 2 − Mounting Data)
Thermal Resistance − Junction−to−Ambient
(See Note 2 − Mounting Data)
RθJL
RθJA
13
50
12
40
°C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 8.0 Amps, TL = 25°C)
vF
0.55
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1)
TL = 25°C
TL = 100°C
iR
1.0
50
mA
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle =2.0%.
Figure 1. Typical Forward Voltage
VF
, INSTANTANEOUS VOLTAGE (VOLTS)
30
10
1
0.80.70.60.50.40.30.20.1
Figure 2. Maximum Forward Voltage
0.1
Figure 3. Typical Reverse Current
VR, REVERSE VOLTAGE (VOLTS)
1E−01
1E−02
1E−03
1E−04
35302510 201550
1E−06
IF
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
IR, INSTANTANEOUS REVERSE CURRENT (AMPS)
504540
1E−05
125°C
25°C
100°C
75°C
125°C
25°C
100°C
75°C
VF
, INSTANTANEOUS VOLTAGE (VOLTS)
30
10
1
0.80.70.60.50.40.30.20.1
0.1
IF
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
125°C
25°C
100°C
75°C
MBR845
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
f = 1 MHz
TJ = 25°C
1001010.1
C, CAPACITANCE (pF)
100
1000
10,000
SINGLE P
MBR835, MBR840, MBR845
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3
RqJA (°C/W)
Figure 5. RqJA versus Copper Area
See Note 2
10420
COPPER AREA (sq in)
30
TL, LEAD TEMPERATURE (°C)
Figure 6. Current Derating − Lead
SQUARE
WAVE
14040200
IF
, AVERAGE FORWARD
CURRENT (AMPS)
0
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Forward Power Dissipation
TJ = 125°C
10620
PFO, AVERAGE POWER
DISSIPATION (WATTS)
0
35
40
45
50
55
60
65
70
75
86 8060 100 120
1
2
3
4
5
6
7
8
9
dc
RqJL = 12°C/W
48
0.5
1
1.5
2
2.5
3
3.5
4
4.5
SQUARE
WAVE
dc
NOTE 2 — MOUNTING DATA
Mounting Method
P.C. Board with 6.75 sq. in.
copper surface.
Board Ground Plane
L = 3/8,
0.1
t, TIME (sec)
1001.0
0.001
10
1
0.1
0.0001 0.1 1000
Figure 8. Thermal Response, Junction−to−Ambient
0.2
0.01
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.010.001
0.01
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
D = 0.5
0.05
Copper Area = 0.271 sq. in.
RqJA = 61.8 °C/W
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MBR835, MBR840, MBR845
http://onsemi.com
4
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267−05
(DO−201AD)
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
12
KA
K
D
B
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.287 0.374 7.30 9.50
B0.189 0.209 4.80 5.30
D0.047 0.051 1.20 1.30
K1.000 −−− 25.40 −−−
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