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Reengineering Silicon Power Devices: How to improve both conduction and switching losses
This deep-dive explains how to reduce both conduction and switching losses without traditional tradeoffs. Learn key concepts like RDS(on), QSW, and EOSS, and see real boost converter test results demonstrating improved efficiency, performance, and reliability versus conventional silicon and GaN solutions.
Part List
| Abbildung | Hersteller-Teilenummer | Beschreibung | FET-Typ | Technologie | Drain-Source-Spannung (Vdss) | Verfügbare Menge | Preis | Details anzeigen | |
|---|---|---|---|---|---|---|---|---|---|
 |  | IS20M5R5S1T | MOSFET N-CH 200V 151A TOLL | N-Kanal | MOSFET (Metalloxid) | 200 V | 100 - Sofort | $7.56 | Details anzeigen |
|  | IS20M6R3S1P | MOSFET N-CH 200V 172A TO-220 | N-Kanal | MOSFET (Metalloxid) | 200 V | 977 - Sofort | $5.79 | Details anzeigen |
|  | IS20M028S1C | MOSFET N-CH 200V 45A PDFN-8 | N-Kanal | MOSFET (Metalloxid) | 200 V | 3106 - Sofort | $2.85 | Details anzeigen |
| | IS20M028S1P | MOSFET N-CH 200V 41A TO-220 | N-Kanal | MOSFET (Metalloxid) | 200 V | 991 - Sofort | $3.27 | Details anzeigen |
| | IS15M7R1S1C | MOSFET N-CH 150V 133A PDFN-8 | N-Kanal | MOSFET (Metalloxid) | 150 V | 0 | $4.57 | Details anzeigen |
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