Superior GaN performance

For maximum efficiency: Infineon's CoolGaN™ HEMTs & EiceDRIVER™ gate drivers

CoolGaN™, Infineon's GaN technology, is unrivaled in quality, and backed by Infineon's in-house manufacturing for supply stability. CoolGaN™ products offer the highest efficiency and power density in the market, making them ideal for applications that demand superior performance. With extensive experience and application know-how, Infineon provides innovative product solutions across the entire spectrum, from discrete to highly integrated system solutions.

Why GaN from Infineon?

Full technology offering:

Si + SiC + GaN

Highest quality standards:

Most reliable GaN HEMT in the industry

Supply stability:

In-house manufacturing

Application coverage:

Industrial, Consumer and Automotive

IP Leadership:

650+ GaN specific patents

System expertise:

Switch + driver + control IC

Target applications:

Charger/Adapter
Lighting
Server
Telecom
TV/Monitor
Solar
Motor drives

Choose what is right for you – discrete or IPS.

Check the graph to find out if you need a flexible discrete solution or a highly integrated system for your next design. The CoolGaN™ offering provides the right product for your requirements.

Discrete
Integrated
Design Support

Discrete solution: CoolGaN™ 600V GIT e-mode HEMTs + EiceDRIVER™ gate driver ICs

Infineon’s CoolGaN™ GIT HEMT is a highly efficient gallium nitride transistor technology for power conversion in the voltage range up to 600V. Infineon brought the e-mode concept to maturity with end-to-end production in high volumes. The pioneering quality ensures the highest standards and offers the most reliable and performing solution among all GaN HEMTs on the market.

Key Features

High performance
Top- and bottom-side cooled SMD packages
Highest efficiency and power density
Best thermal behavior in applications

Key Benefits

Unique normally-off concept solution
Excellent for hard and soft-switching
Turn-on and turn-off optimized
Zero reverse recovery Q_rr
R_DS(on) shift immunity
Excellent Vth stability
Best Figure-of-Merits
Longer lifetime proven

Download Whitepaper

Product Offering:

Package R_DS(ON)	DSO-20-85 Bottom-side cooling	DSO-20-87 Top-side cooling	HSOF-8-3 TO-Leadless	LSON-8-1 DFN 8x8	TSON-8-3 ThinPAK 5x6
70 mΩ	IGO60R070D1	IGOT60R070D1	IGT60R070D1	IGLD60R070D1
190 mΩ				IGLD60R190D1	IGLR60R190D1
260 mΩ					IGLR60R260D1
340 mΩ					IGLR60R340D1

Gate Drive Solutions:

Infineon’s CoolGaN™ GIT e-mode HEMTs are easy to drive. Download this whitepaper to discover various driving solutions, ranging from the standard RC-coupled driver to a new differential drive concept utilizing dedicated gate driver ICs. In half-bridge topologies, a hybrid configuration combining isolated and non-isolated drivers could be an exciting alternative. Practical application examples and circuit schematics complement the paper.

Standard gate drivers for CoolGaN™ GIT e-mode HEMTs

EiceDRIVER™ family	Part Number	Output Channels	Technology and Isolation Class		Use-case	Package
2EDi	2EDF7275F	2-channels	Isolated	Functional	Drive two GaN (half-bridge, diagonal, parallel)	DSO-16 150mil
	2EDF8275F					DSO-16 150mil
	2EDF7275K					LGA-13
	2EDS7165H			Reinforced		DSO-16 300mil
	2EDS8265H					DSO-16 300mil
	2EDR7259X					DSO-14 300mil
	2EDR8259X					DSO-14 300mil
	2EDB7259Y			Single protection		DSO-14 150mil
	2EDB8259Y			Single protection		DSO-14 150mil
1EDB	1EDB7275F	1-channel	Isolated	Single protection	Drive high-side GaN	DSO-8 150mil
1EDB	1EDB8275F	1-channel	Isolated	Single protection	Drive high-side GaN	DSO-8 150mil
1EDN-TDI	1EDN7550B	1-channel	Truly differential inputs (TDI)	Non-isolated	Drive low-side Kelvin-source GaN	SOT23
1EDN-TDI	1EDN8550B	1-channel	Truly differential inputs (TDI)	Non-isolated	Drive low-side Kelvin-source GaN	6-Pin

Dedicated Gate Driver ICs for CoolGaN™ GIT e-mode HEMTs

EiceDRIVER™ family	Part Number	Output Channels	Technology	Use-case	Package
1EDi	1EDS5663H	1-channel	Isolated	Drive low-side or high-side CoolGaN™ GIT e-mode HEMTs with minimized reverse conduction losses and safe "first pulse”	DSO-16 300mil reinforced
	1EDF5673F				DSO-16 150mi functional HVI
	1EDF5673K				LGA13 5x5mm functional LV

Integrated GaN: CoolGaN™ Integrated Power Stage (IPS) half-bridge and single-switch

Infineon's CoolGaN™ Integrated Power Stage (IPS) combines the robustness of the hybrid-drain-embedded gate injection transistor (HD-GIT) structure with Infineon’s precise integrated EiceDRIVER™ gate driver technology. This results in a smaller physical footprint, increased power density, and energy efficiency - making it an excellent alternative to silicon semiconductors. Infineon's CoolGaN™ IPS also has the added benefit of faster switching frequency and increased design flexibility. For engineers, this means more energy-efficient systems, simplified implementation, and enhanced PCB space utilization.

Key Features

Digital-in power-out building block
Application configurable switching behavior
Highly accurate and stable timing
Thermally enhanced 8x8 mm QFN-28/21 package

Key Benefits

Easy to drive with digital PWM input
Low system BOM
Configurability of gate path with low inductance loop on PCB
Short dead-time setting for maximized system efficiency
Small package for compact system designs

Online training: Benefits of CoolGaN™ IPS for high-density chargers and adapters

The CoolGaN™ IPS is available in half-bridge power stage configuration (available in 140mΩ - 500 mΩ) or single channel configuration (available in 100mΩ - 270 mΩ) with dedicated gate drivers in a thermally enhanced QFN (8x8mm) package.

Watch eLearning

Product Offering:

Package R_DS(ON)	CoolGaN™ half-bridge	CoolGaN™ IPS single-switch
100 mΩ		IGI60F100A1L
140 mΩ	IGI60F1414A1L	IGI60F140A1L
200 mΩ	IGI60F2020A1L	IGI60F200A1L
270 mΩ	IGI60F2727A1L	IGI60F270A1L
500 mΩ	IGI60F5050A1L