Scheda tecnica MJL4281A, 302A di onsemi

0N Semiconductorg
© Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 3
1Publication Order Number:
MJL4281A/D
MJL4281A (NPN)
MJL4302A (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The MJL4281A and MJL4302A are power transistors for high
power audio.
Features
•350 V Collector−Emitter Sustaining Voltage
•Gain Complementary:
Gain Linearity from 100 mA to 5 A
High Gain − 80 to 240
hFE = 50 (min) @ IC = 8 A
•Low Harmonic Distortion
•High Safe Operation Area − 1.0 A/100 V @ 1 Second
•High fT
•Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 350 Vdc
Collector−Base Voltage VCBO 350 Vdc
Emitter−Base Voltage VEBO 5.0 Vdc
Collector−Emitter Voltage − 1.5 V VCEX 350 Vdc
Collector Current − Continuous
Collector Current − Peak (Note 1)
IC15
30
Adc
Base Current − Continuous IB1.5 Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD230
1.84
W
°C/W
Operating and Storage Junction
Temperature Range
TJ, Tstg −  65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 0.54 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MJL4281A TO−264
TO−264
CASE 340G
STYLE 2
25 Units/Rail
2
1
15 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
350 VOLTS, 230 WATTS
3
MARKING DIAGRAM
xxx = 281 or 302
A = Assembly Location
YY = Year
WW = Work Week
G = Pb−Free Package
MJL4302A TO−264 25 Units/Rail
1 BASE
2 COLLECTOR
3 EMITTER
http://onsemi.com
MJL4xxxA
AYYWWG
MJL4302AG TO−264
(Pb−Free)
25 Units/Rail
MJL4281AG TO−264
(Pb−Free)
25 Units/Rail
MJL4281A (NPN) MJL4302A (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage
(IC = 50 mA, IB = 0)
VCE(sus) 350 Vdc
Collector Cut−off Current
(VCE = 200 V, IB = 0)
ICEO 100 mAdc
Collector Cutoff Current
(VCB = 350 Vdc, IE = 0)
ICBO
−50
mAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
−5.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1.0 s (non−repetitive)
(VCE = 100 Vdc, t = 1.0 s (non−repetitive)
IS/b 4.5
1.0
−
−
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 3.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
(IC = 8.0 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
hFE 80
80
80
80
50
10
250
250
250
250
−
−
−
Collector−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 Adc)
VCE(sat)
−1.0
Vdc
Emitter−Base Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 A)
VBE(sat)
−1.4
Vdc
Base−Emitter ON Voltage
(IC = 8.0 Adc, VCE = 5.0 Vdc)
VBE(on)
−1.5
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
fT35 −
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz)
Cob
−600
pF
MJL4281A (NPN) MJL4302A (PNP)
http://onsemi.com
3
10
100
1000
0.01 0.1 1 10 100
hFE, DC CURRENT GAIN
TJ = 100°C
TJ = 25°C
Figure 1. DC Current Gain, VCE = 5 V,
NPN MJL4281A
IC, COLLECTOR CURRENT (A)
10
100
1000
0.01 0.1 1 10 100
hFE, DC CURRENT GAIN
Figure 2. DC Current Gain, VCE = 5 V,
PNP MJL4302A
IC, COLLECTOR CURRENT (A)
TJ = 100°C
TJ = 25°C
10
100
1000
0.01 0.1 1 10 100
hFE, DC CURRENT GAIN
Figure 3. DC Current Gain, VCE = 20 V,
NPN MJL4281A
IC, COLLECTOR CURRENT (A)
TJ = 100°C
TJ = 25°C
10
100
1000
0.01 0.1 1 10 100
hFE, DC CURRENT GAIN
Figure 4. DC Current Gain, VCE = 20 V,
PNP MJL4302A
IC, COLLECTOR CURRENT (A)
TJ = 100°C
TJ = 25°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.01 0.1 1 10 100
Figure 5. Typical Saturation Voltage,
NPN MJL4281A
IC, COLLECTOR CURRENT (A)
SATURATION VOLTAGE (V)
TJ = 25°C
Ic/Ib = 10
Vbe(sat)
Vce(sat)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01 0.1 1 10 100
Figure 6. Typical Saturation Voltage,
PNP MJL4302A
IC, COLLECTOR CURRENT (A)
SATURATION VOLTAGE (V)
TJ = 25°C
Ic/Ib = 10
Vbe(sat)
Vce(sat)
TYPICAL CHARACTERISTICS
MJL4281A (NPN) MJL4302A (PNP)
http://onsemi.com
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1 1 10 100
Figure 7. Typical Base−Emitter Voltages,
NPN MJL4281A
IC, COLLECTOR CURRENT (A)
VBE(on), BASE−EMITTER VOLTAGE
(V)
0.0
0.5
1.0
1.5
2.0
2.5
0.01 0.1 1 10 100
VBE(on), BASE−EMITTER VOLTAGE
(V)
IC, COLLECTOR CURRENT (A)
Figure 8. Typical Base−Emitter Voltages,
PNP MJL4302A
0
10
20
30
40
50
60
70
0.1 1 10
Figure 9. Typical Current Gain Bandwidth Product,
NPN MJL4281A
IC, COLLECTOR CURRENT (A)
fT, CURRENT BANDWIDTH PRODUCT (MHz)
VCE = 5 V
TJ = 25°C
ftest = 1 MHz
VCE = 10 V
0
10
20
30
40
50
60
70
0.1 1 10
TJ = 25°C
ftest = 1 MHz
VCE = 5 V
VCE = 10 V
fT, CURRENT BANDWIDTH PRODUCT (MHz)
0.01
0.1
1
10
100
1 10 100 1000
IC, COLLECTOR CURRENT (A)
Vce, COLLECTOR−EMITTER VOLTAGE (V)
10 mS
100 mS
1 Sec
TJ = 25°C0.01
0.1
1
10
100
1 10 100 1000
IC, COLLECTOR CURRENT (A)
Vce, COLLECTOR−EMITTER VOLTAGE (V)
10 mS
100 mS
1 Sec
TJ = 25°C
Figure 10. Typical Current Gain Bandwidth Product,
PNP MJL4302A
Figure 11. Active Region Safe Operating Area,
NPN MJL4281A
Figure 12. Active Region Safe Operating Area,
PNP MJL4302A
TYPICAL CHARACTERISTICS
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STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
STYLE 3:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 4:
PIN 1. DRAIN
2. SOURCE
3. GATE
DIM
A
MIN MAX MIN MAX
INCHES
28.0 29.0 1.102 1.142
MILLIMETERS
B19.3 20.3 0.760 0.800
C4.7 5.3 0.185 0.209
D0.93 1.48 0.037 0.058
E1.9 2.1 0.075 0.083
F2.2 2.4 0.087 0.102
G5.45 BSC 0.215 BSC
H2.6 3.0 0.102 0.118
J0.43 0.78 0.017 0.031
K17.6 18.8 0.693 0.740
L11.2 REF 0.411 REF
N4.35 REF 0.172 REF
P2.2 2.6 0.087 0.102
Q3.1 3.5 0.122 0.137
R2.25 REF 0.089 REF
U6.3 REF 0.248 REF
W2.8 3.2 0.110 0.125
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
STYLE 5:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
0.25 (0.010) MTBM
J
R
H
N
U
L
P
A
K
C
E
F
D
G
W
2 PL
3 PL
0.25 (0.010) MTBS
123
−B−−T−
SCALE 1:2
TO−3BPL (TO−264)
CASE 340G−02
ISSUE J
DATE 17 DEC 2004
Q
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
XXXXXX
AYYWW
XXXXXX = Specific Device Code
A = Location Code
YY = Year
WW = Work Week
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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TO−3BPL (TO−264)
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1
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