Scheda tecnica BYG10D,G,J,K,M,Y di Vishay General Semiconductor - Diodes Division

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BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com Vishay General Semiconductor
Revision:21-Feb-2020 1Document Number: 88957
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Avalanche SMD Rectifier
DESIGN SUPPORT TOOLS AVAILABLE
FEATURES
• Low profile package
• Ideal for automated placement
• Controlled avalanche characteristics
• Glass passivated pellet chip junction
• Low reverse current
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals: matte tin plated leads, solderable per J-STD-002
and JESD 22-B102
E3, M3, HE3, HM3 suffix meet JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.5 A
VRRM 200 V, 400 V, 600 V, 800 V,
1000 V, 1600 V
IFSM 30 A
IR1.0 μA
VF1.15 V
ER20 mJ
TJ max. 150 °C
Package SMA (DO-214AC)
Circuit configuration Single
SMA (DO-214AC)
Cathode Anode
3
3
3
D
D
D
3
D
3D Models
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT
Device marking code BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y
Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1000 1600 V
Average forward current IF(AV) 1.5 A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load IFSM 30 A
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I(BR)R = 1 A, TJ = 25 °C (for BYG10D thru BYG10M)
I(BR)R = 0.4 A, TJ = 25 °C (for BYG10Y)
ER20 mJ
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
VISHAY. an: DwodesAmencasalwshay.com DwodesAslaalwshayLam DwodesEurogeQH/wshay com www wshay,com/doc791000
BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com Vishay General Semiconductor
Revision:21-Feb-2020 2Document Number: 88957
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Notes
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu
(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 μm Cu
Note
(1) AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT
Maximum
instantaneous
forward voltage (1)
IF = 1 A
TJ = 25 °C VF
1.1
V
IF = 1.5 A 1.15
Maximum DC
reverse current VR = VRRM
TJ = 25 °C IR
1μA
TJ = 100 °C 10
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 4μs
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT
Typical thermal resistance, junction to lead RθJL 25 °C/W
Typical thermal resistance, junction to ambient
RθJA (1) 150
°C/WRθJA (2) 125
RθJA (3) 100
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYG10M-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYG10M-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
BYG10MHE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel
BYG10MHE3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel
BYG10M-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYG10M-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
BYG10MHM3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel
BYG10MHM3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel
VISHAY. an. DwodesAmencasfilvwshay.com DwodesAslafilvwshayLam DwodesEumge®vwshay com www wshay,com/doc791000
BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com Vishay General Semiconductor
Revision:21-Feb-2020 3Document Number: 88957
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Reverse Recovery Time vs. Forward Current
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.5 1.0 1.5 2.0 2.5 3.0
Axis Title
1st line
2nd line
2nd line
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
TJ= -40 °C
TJ= 25 °C
TJ= 150 °C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Average Forward Current (A)
R
θJA
≤
125 K/W
R
θJA
≤
150 K/W
V
R
= V
RRM
Half Sine-Wave
R
θJL
≤
25 K/W
1
10
100
1000
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperature (°C)
V
R
= V
RRM
0
50
100
150
200
250
300
350
400
25 50 75 100 125 150
VR = VRRM
PR - Limit at 100 % VR
Reverse Power Dissipation (mW)
Junction Temperature (°C)
PR - Limit at 80 % VR
0
5
10
15
20
25
30
0.1 1 10 100
f = 1 MHz
Reverse Voltage (V)
Diode Capacitance (pF)
0
0
1000
2000
3000
4000
5000
0.2 0.4 0.6 0.8
Reverse Recovery Time (ns)
Forward Current (A)
1.0
T
A
= 100 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 75 °C
T
A
= 50 °C
I
R
= 0.5 A, i
R
= 0.125 A
VISHAY. :@ T a wm 931 on: D\odesAmencasfllvlshayLom DuodesAsua@vushay.cam DwodesEumge®wshaycom www wshay.com/doc791000
BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com Vishay General Semiconductor
Revision:21-Feb-2020 4Document Number: 88957
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Reverse Recovery Charge vs. Forward Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
SMA (DO-214AC)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
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