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DMP6185SE
Document Number DS36465 Rev. 4 - 2
1 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6185SE
ADVANCE INFORMATION
NEW PRODUCT
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) ID
TA = +25°C
-60V 150m @ VGS= -10V -3A
185m @ VGS= -4.5V -2.7A
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Applications
• Motor Control
• Transformer Driving Switch
• DC-DC Converters
• Power Management Functions
• Uninterrupted Power Supply
Features and Benefits
• 100% Unclamped Inductive Switch (UIS) test in production
• Low on-resistance
• Fast switching speed
• Lead-Free Finish; RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See diagram below
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (approximate)
Ordering Information (Note 4)
Part Number Qualification Case Packaging
DMP6185SE-13 Standard SOT223 2,500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Pin Out - Top View
Top View
SOT223
e3
D
S
G
Equivalent Circuit
P6185
Y
WW
P6185
Y
WW
= Manufacturer’s Marking
P6185 = Marking Code
YWW = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YWW = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y= Year (ex: 3 = 2013)
WW = Week (01 - 53)
DMP61858E 20's Document Number 0535455 Rev A 72 www.diodss.cum
DMP6185SE
Document Number DS36465 Rev. 4 - 2
2 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6185SE
ADVANCE INFORMATION
NEW PRODUCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source voltage VDSS -60 V
Gate-Source voltage VGS ±20 V
Continuous Drain current (Note 6) VGS = -10V TA = +25°C ID
-3 A
TA = +70°C -2.4
Maximum Body Diode Continuous Current IS -2 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -15 A
Single Pulsed Avalanche Current (Note 7) IAS -16 A
Single Pulsed Avalanche Energy (Note 7) EAS 13 mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) TA = +25°C PD 1.2 W
TA = +70°C 0.8
Thermal Resistance, Junction to Ambient (Note 5) Steady state RJA 104 °C/W
t<10s 51
Total Power Dissipation (Note 6) TA = +25°C PD 2.2 W
TA = +70°C 1.4
Thermal Resistance, Junction to Ambient (Note 6) Steady state RJA 60
°C/W
t<10s 30
Thermal Resistance, Junction to Case (Note 6) RJC 7.6
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BVDSS -60 − − V VGS = 0V, ID = -250A
Zero Gate Voltage Drain Current IDSS − − -1 µA
VDS = -48V, VGS = 0V
Gate-Source Leakage IGSS − − ±100 nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage VGS
(
th
)
-1 − -3 V
VDS = VGS, ID = -250A
Static Drain-Source On-Resistance RDS (ON) − 110 150 m VGS = -10V, ID = -2.2A
130 185 VGS = -4.5V, ID = -1.8A
Diode Forward Voltage VSD − -0.75 -0.95 V VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Ciss − 708 − pF VDS = -30V, VGS = 0V,
f = 1MHz
Output Capacitance Coss − 39 − pF
Reverse Transfer Capacitance Crss − 32 − pF
Gate Resistance R
g
− 17 28 VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V) Q
g
− 6.2 − nC
VDS = -30V, ID = -12A
Total Gate Charge (VGS = -10V) Q
g
− 14 − nC
Gate-Source Charge Q
g
s − 2.8 − nC
Gate-Drain Charge Q
g
d − 3.1 − nC
Turn-On Delay Time tD
(
on
)
− 5.2 − ns
VDS = -30V, RL = 2.5
VGS = -10V, RG = 3
Turn-On Rise Time t
r
− 23 − ns
Turn-Off Delay Time tD
(
off
)
− 33 − ns
Turn-Off Fall Time tf − 39 − ns
Body Diode Reverse Recovery Time tr
r
− 22 − ns IF = -12A, di/dt = 100A/s
Body Diode Reverse Recovery Charge Qr
r
− 17 − nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting TA = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
, DRAIN CURRENT SOURCE 0 R DR SOURCE 0 R DR DMP61BSSE DocumemNumberDSSaASS Rev A 72 CURR DR ‘DR lN-SOURC ON-R ISTANC R , DRA NASOURC R 3 of 6 www.diodes.com ovc :20A
DMP6185SE
Document Number DS36465 Rev. 4 - 2
3 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6185SE
ADVANCE INFORMATION
NEW PRODUCT
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
012345
V = -1.2V
GS
V = -1.5V
GS
V = -1.8V
GS
V = -2.0V
GS
V= -8V
GS
V = -2.5V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
-I , D
R
AIN
C
U
R
R
ENT (A)
D
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3
T = 150 C
A
°
T = 125 C
A
°
T = 85C
A
°
T = 25C
A
°
T = -55C
A
°
V = -5.0V
DS
-I , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
0 5 10 15 20
V = -4.5V
GS
V = -2.5V
GS
-V , GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
GS
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
0.1
0.2
0.3
0.4
0.5
012
I = 3.4A
D
345678
I = 4.2A
D
I = 2.0A
D
-I , DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
012345678910
T = -55C
A
°
T = 25C
A
°
T = 85C
A
°
T = 125 C
A
°
T = 150 C
A
°
V= -4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 6 On-Resistance Variation with Temperature
R
,
D
R
A
I
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.6
0.8
1
1.2
1.4
1.6
1.8
V = -2.5V
I = -5A
GS
D
V = -4.5V
I = -10A
GS
D
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DMP6185SE
Document Number DS36465 Rev. 4 - 2
4 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6185SE
ADVANCE INFORMATION
NEW PRODUCT
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 7 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(on)
Ω
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
V = -4.5V
I= A
GS
D
-10
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
0
0.2
0.4
0.6
0.8
1
1.2
-I = 1mA
D
-I = 250µA
D
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
SD
-I , S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
T= 125C
A
°
T= 150C
A
°
T= 85C
A
°
T= 25C
A
°
T= -55C
A
°
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E (p
F
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DS
10
100
1000
10000
0 5 10 15 20 25 30 35 40
f = 1MHz
C
oss
C
rss
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
g
-V ,
G
ATE-S
O
U
R
C
E V
O
LTA
G
E (V)
GS
0
1
2
3
4
5
6
7
8
9
10
0 3 6 9 12 15
V = -30V
I = -12A
DS
D
g B n: n: m I ,_ ,_ z m n: ,_ +v~ ‘/ u-n A 7 ‘ DMP61553E 50's Documem Number 0535455 Rev A 72 www.6iodes.com
DMP6185SE
Document Number DS36465 Rev. 4 - 2
5 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6185SE
ADVANCE INFORMATION
NEW PRODUCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)
Figure 12 Transient Thermal Resistance
0.001
0.01
0.1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
1
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
R (t) = r(t) * R
R = 102°C/W
Duty Cycle, D = t1/ t2
θθ
θ
JA JA
JA
SOT223
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b1 2.90 3.10 3.00
b2 0.60 0.80 0.70
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e — — 4.60
e1 — — 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm
Dimensions Value (in mm)
X1 3.3
X2 1.2
Y1 1.6
Y2 1.6
C1 6.4
C2 2.3
A1
A
X2
C1
C2
X1
Y2
Y1
DM P61 858 E Document Number DsasAss Rev A , 2 6 ol 6 www.diodes.com
DMP6185SE
Document Number DS36465 Rev. 4 - 2
6 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6185SE
ADVANCE INFORMATION
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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